New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC COMPLIANT APPLICATIONS • Synchronous Rectification • Power Supplies D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 110c ID 29b Pulsed Drain Current IDM Avalanche Current Pulse IAS 80 EAS 320 Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C 250 110 IS TC = 70 °C TA = 25 °C A 312a 200 PD W 3.13b 2.0b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V a, c 2.6b TC = 25 °C Maximum Power Dissipation A 23b TA = 70 °C Single Pulse Avalanche Energy V 110a, c TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit 32 0.33 40 0.4 °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. Document Number: 69983 S-80680-Rev. A, 31-Mar-08 www.vishay.com 1 New Product SUM110N04-2m1P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 41 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V -8 1.2 120 µA A VGS = 10 V, ID = 30 A 0.0017 0.0021 VGS = 4.5 V, ID = 20 A 0.002 0.0024 VDS = 15 V, ID = 30 A 180 Ω S Dynamicb Input Capacitance Ciss 18800 Output Capacitance Coss Reverse Transfer Capacitance Crss 850 Total Gate Charge Qg 240 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A tr 360 nC 40 22 f = 1 MHz td(on) td(off) pF 1550 VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 0.85 1.3 20 30 11 17 77 115 tf 10 15 td(on) 102 155 tr td(off) VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf 62 95 180 270 60 90 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 110 200 IS = 20 A IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 50 75 ns 70 105 nC 30 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69983 S-80680-Rev. A, 31-Mar-08 New Product SUM110N04-2m1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 5 VGS = 10 thru 5 V 4 I D - Drain Current (A) I D - Drain Current (A) 200 150 VGS = 4 V 100 VGS = 3 V 50 3 TC = 125 °C 2 TC = 25 °C 1 TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0040 400 TC = - 55 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 320 240 TC = 25 °C 160 TC = 125 °C 80 0.0032 0.0024 VGS = 4.5 V 0.0016 VGS = 10 V 0.0008 0.0000 0 0 15 30 45 60 75 0 90 20 ID - Drain Current (A) 40 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 24000 10 ID = 20 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 16000 8000 Coss Crss 0 0 8 VDS = 20 V 6 VDS = 10 V VDS = 30 V 4 2 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 69983 S-80680-Rev. A, 31-Mar-08 40 0 50 100 150 200 250 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product SUM110N04-2m1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 ID = 30 A 10 I S - Source Current (A) VGS = 10 V (Normalized) R DS(on) - On-Resistance 1.7 1.4 VGS = 4.5 V 1.1 TJ = 150 °C 0.1 0.8 0.01 0.5 - 50 - 25 0 25 50 75 100 125 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Forward Diode Voltage vs. Temperature 1.2 0.6 0.010 0.008 0.2 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) TJ = 25 °C 1 0.006 0.004 TJ = 150 °C - 0.2 ID = 5 mA - 0.6 0.002 ID = 250 µA TJ = 25 °C - 1.0 - 50 0.000 0 2 4 6 8 10 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 1000 Limited by RDS(on)* 10 µs 100 µs I D - Drain Current (A) 100 1 ms 10 ms 100 ms, DC 10 1 0.1 TC = 25 °C Single Pulse BVDSS 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69983 S-80680-Rev. A, 31-Mar-08 New Product SUM110N04-2m1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 350 400 350 280 Power (W) I D - Drain Current (A) 300 210 140 Package Limited 250 200 150 100 70 50 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TJ - Junction to Case (°C) TJ - Junction to Case (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69983. Document Number: 69983 S-80680-Rev. A, 31-Mar-08 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000