SUM110P06-08L Vishay Siliconix P-Channel 60-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.008 at VGS = - 10 V - 60 0.0105 at VGS = - 4.5 V • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg Tested ID (A)d - 110 Available RoHS* COMPLIANT S TO-263 G G D S Top View D Ordering Information: SUM110P06-08L SUM110P06-08L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currentd (TJ = 175 °C) TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy d L = 0.1 mH TC = 25 °C Maximum Power Dissipation TA = 25 °Cb Operating Junction and Storage Temperature Range ID Unit V - 110 - 75 IDM - 200 IAS - 85 EAS 211 A mJ c PD 272 3.75b W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient d PCB Mount Junction-to-Case RthJA 40 RthJC 0.55 °C/W Notes: a. Duty cycle ≤ 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by Package. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 73045 S-80273-Rev. B, 11-Feb-08 www.vishay.com 1 SUM110P06-08L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 250 ID(on) VDS = - 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) Forward Transconductance 0.0129 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.016 VDS = - 15 V, ID = - 50 A nA µA 0.008 VGS = - 10 V, ID = - 30 A, TJ = 125 °C gfs V A 0.0065 VGS = - 4.5 V, ID = - 20 A a -3 0.0085 Ω 0.0105 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c Qgs Gate-Drain Charge Qgd Gate Resistance Rg c 760 tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 160 VDS = - 30 V, VGS = - 10 V, ID = - 110 A 240 nC 40 36 f = 1 MHz td(on) c pF 975 Qg c Turn-On Delay Time 9200 VGS = 0 V, VDS = - 25 V, f = 1 MHz VDD = - 30 V, RL = 0.27 Ω ID ≅ - 110 A, VGEN = - 10 V, RG = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 1.5 3 4.5 20 30 190 285 140 210 300 450 IS - 110 ISM - 200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = - 50 A, VGS = 0 V trr IRM(REC) Qrr ns °Cb Pulsed Current Continuous Current Ω IF = - 50 A, di/dt = 100 A/µs A - 1.0 - 1.5 V 60 90 ns -3 - 4.5 A 0.09 0.2 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73045 S-80273-Rev. B, 11-Feb-08 SUM110P06-08L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 200 VGS = 10 thru 5 V 160 I D − Drain Current (A) I D − Drain Current (A) 160 120 4V 80 40 120 80 TC = 125 °C 40 25 °C 3V - 55 °C 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 200 25 °C 160 125 °C 120 80 40 r DS(on) − On-Resistance (Ω) g fs − Transconductance (S) TC = - 55 °C 0.016 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 0.000 0 0 10 20 30 40 50 60 70 0 80 20 40 ID − Drain Current (A) 80 100 120 ID − Drain Current (A) Transconductance On-Resistance vs. Drain Current 15000 VGS − Gate-to-Source Voltage (V) 20 12000 C − Capacitance (pF) 60 Ciss 9000 6000 3000 Coss Crss 0 0 VDS = 30 V ID = 110 A 16 12 8 4 0 10 20 30 40 50 VDS − Drain-to-Source Voltage (V) Capacitance Document Number: 73045 S-80273-Rev. B, 11-Feb-08 60 0 40 80 120 160 200 240 280 320 Qg − Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM110P06-08L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.0 VGS = 10 V ID = 30 A I S − Source Current (A) rDS(on) − On-Resistance (Normalized) 1.7 1.4 1.1 TJ = 150 °C TJ = 25 °C 10 0.8 0.5 - 50 1 - 25 0 25 50 75 100 125 150 0.0 175 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) TJ − Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 76 ID = 250 µA 72 IAV (A) at TA = 25 °C 10 1 V(BR)DSS (V) I Dav (A) 100 IAV (A) at TA = 150 °C 0.0001 0.01 0.001 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 64 60 0.1 0.00001 68 1 56 - 50 - 25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 73045 S-80273-Rev. B, 11-Feb-08 SUM110P06-08L Vishay Siliconix THERMAL RATINGS 1000 200 Limited by rDS(on)* 10 µs 100 I D − Drain Current (A) I D − Drain Current (A) 150 100 Package Limited 50 25 50 75 100 125 150 10 1 ms 10 ms 100 ms, DC 1 TC = 25 °C Single Pulse 0.1 0.1 0 0 100 µs 175 TC − Case Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 VDS − Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73045. Document Number: 73045 S-80273-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1