InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors (0.9 to 1.67 μm / 2.55 μm) The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for high reliability. Signal processing circuits on the CMOS chip can be selected from two conversion efficiencies (CE) by external voltage. The image sensor operates over a wide dynamic range when CE=16 nV/e- and delivers high gain when CE=320 nV/e-. Features Applications Wide dynamic range Near infrared multichannel spectrophotometry Low noise and low dark current Radiation thermometry Two selectable conversion efficiencies Non-destructive inspection Anti-saturation circuit Related products CDS circuit *1 Offset compensation circuit Simple operation (by built-in timing generator) * High resolution: 25 μm pitch (512 ch) 2 InGaAs multichannel detector head C8061-01, C8062-01 Multichannel detector head controller C7557-01 Low cross-talk 256 ch: 1 video line 512 ch: 2 video lines *1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs (programmable logic device) are used to input the required timing signals. However, the G9211 to G9214/G9205 to G9208 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings. www.hamamatsu.com 1 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Selection guide Type no. Cooling G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9205-512W G9206-02 G9206-256W G9206-512W G9207-256W G9208-256W G9208-512W One-stage TE-cooled Two-stage TE-cooled Image size (mm) Number of total pixels 256 512 256 512 256 256 256 256 512 256 256 512 12.8 × 0.25 12.8 × 0.50 12.8 × 0.25 Number of effective pixels 256 512 256 512 256 256 256 256 512 256 256 512 Applicable multichannel detector head C8061-01 C8062-01 Shape specifications Pixel size [μm (H) × μm (V)] 50 × 250 25 × 250 50 × 500 25 × 500 50 × 250 25 × 250 50 × 250 50 × 250 25 × 250 50 × 250 50 × 250 25 × 250 Type no. G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9205-512W G9206-02 G9206-256W G9206-512W G9207-256W G9208-256W G9208-512W Details of photosensitive area (unit: μm) Pixel size (μm) 50 25 50 25 50 25 50 50 25 50 50 25 Window material 28-pin metal (refer to the dimensionl outline) Sapphire glass with anti-reflective coating Block diagram CLK RESET Timing generator V Package Vdd Vss INP Vref Cf SELECT Bias generator AD-TRIG Shift register Address switch Readout circuit Charge amp + sample-and-hold circuit CMOS IC VIDEO x H InGaAs photodiode array Number of pixels x H 256 30 50 512 10 25 V 250 Thermoelectric cooler + Thermoelectric cooler - Temperature monitor 500 KMIRC0033EB 250 500 KMIRC0040EA 2 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Absolute maximum ratings Parameter Symbol Operating temperature Topr Storage temperature Tstg Supply voltage Clock pulse voltage Reset pulse voltage Gain selection terminal voltage Vdd, INP, Vref Vφ V(RES) Vcsel Condition Chip temperature, No dew condensation*3 Chip temperature, No dew condensation*3 Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Min. Typ. Max. Unit -40 - +70 °C -40 - +85 °C -0.3 -0.3 -0.3 -0.3 - +6 +6 +6 +6 V V V V *3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Recommended terminal voltage Parameter Symbol Vdd Vref INP Vss Supply voltage Element bias Ground Clock pulse voltage Reset pulse voltage High Low High Low Vφ V(RES) Min. 4.9 1.0 3.5 Vdd - 0.5 0 Vdd - 0.5 0 Typ. 5.0 1.26 4.5 0 Vdd 0 Vdd 0 Max. 5.1 1.3 4.6 Vdd + 0.5 0.4 Vdd + 0.5 0.4 Unit V V V V Min. 0.1 0.0125 Vref - Typ. 45 90 f/8 4.5 1.26 Vref Vdd GND Max. 50 100 1 1 4 0.5 INP - Unit V V Electrical characteristics (Ta=25 °C) Parameter Consumption current Clock frequency Video data rate Video output voltage High Low Output offset voltage A/D trigger voltage High Low Symbol 256 pixels I(Vdd) 512 pixels I(Vref) I(INP) f fV VH VL Vos VtrigH VtrigL mA mA mA MHz MHz V V V V V 3 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, Vf=5 V, CE=16 nV/e-, f=250 kHz) Parameter Symbol G9211 to G9214 series*4 Min. Typ. Max. Spectral response range λ - 0.9 to 1.7 - Peak sensitivity wavelength λp - 1.55 - Photosensitivity (λ=λp) S 0.85 0.95 - G9205 to G9208 series*5 Type no. Min. Typ. Max. 0.9 to 1.85 G9205 G9206 0.9 to 2.05*6 G9207 0.9 to 2.25 G9208 0.9 to 2.55 G9205 1.75 G9206 1.95 G9207 2.05 G9208 2.3 G9205 0.9 1.1 G9206 1.0 1.2 G9207 1.0 1.2 G9208 0.9 1.3 16 ±5 ±10 3 3.2 187.5 180 300 10000 16666 5 Conversion efficiency CE 16 Photoresponse nonuniformity*7 PRNU ±3 ±5 Saturation voltage Vsat 3 3.2 Saturation charge Qsat 187.5 N 180 300 Readout noise*8 Dynamic range D 10000 16666 Defective pixels*9 1 *4: Td=25 °C *5: Td=-20 °C *6: G9206-02, G9206-512W=2.15 *7: 50% of saturation, after dark output subtraction, excluding first and last pixels G9211 to G9214 series: integration time=10 ms, G9205 to G9208 series: integration time=3 ms *8: G9211 to G9214 series: integration time=10 ms, G9205 to G9208 series: integration time=0.8 ms *9: Pixels with photoresponse nonuniformity, readout noise or dark current higher than the maximum value Unit μm μm A/W nV/e% V MeμV rms % Dark output characteristics (CE=16 nV/e-, G9211 to G9214 series: Td=25 °C, G9205 to G9208 series: Td=-20 °C) Parameter Dark output (dark output nonuniformity) Dark current Symbol G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9205-512W G9206-02 G9206-256W G9206-512W G9207-256W G9208-256W G9208-512W G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9205-512W G9206-02 G9206-256W G9206-512W G9207-256W G9208-256W G9208-512W VD ID Min. -1 -0.5 -2 -0.5 -6 -6 -7 -12 -12 -80 -200 -200 -10 -5 -20 -5 -60 -60 -70 -120 -120 -800 -2000 -2000 Typ. 0.2 0.1 0.4 0.1 1.5 1.5 3 3 3 20 50 50 2 1 4 1 15 15 30 30 30 200 500 500 Max. 1 0.5 2 0.5 6 6 7 12 12 80 200 200 10 5 20 5 60 60 70 120 120 800 2000 2000 Unit V/s pA 4 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Equivalent circuit 1 pixel High gain Low gain Shift register Offset compensation circuit CDS VIDEO Photodiode AD-TRIG Timing generator Vdd INP Vss CLK RESET Vref External input C0010 KMIRC0010ED 5 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Timing chart CLK (input) Reset (input) 8 × N clocks (Readout time) 2 clocks Integration time 8 clocks 8 clocks 1 ch 2 ch 10 clocks min. AD_trig Video (output) tr(clk) (n-1) ch n ch tf(clk) CLK t1 tr(RES) Reset t2 Blank period (10 clocks or more) tf(RES) Integration time Actual integration time AD_trig Reset Output t3 Video Readout time for channel 1 Readout time for channel 2 Readout time for last channel KMIRC KMIRC0066EB Parameter Clock pulse frequency Clock pulse width Clock pulse rise/fall times Reset pulse width Reset pulse rise/fall times Reset (rise) timing Reset (fall) timing Output settling time Symbol tpw(clk) tr(clk), tf(clk) tpw(RES) tr(RES), tf(RES) t1 t2 t3 Min. 0.1 100 0 6000 0 50 50 - Typ. 20 20 - Max. 4 100 100 600 Unit MHz ns ns ns ns ns ns ns 6 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Spectral response (Typ.) 1.5 Td=25 °C Td=-10 °C Td=-20 °C G9206-02 G9206-512W G9207-256W G9208 series Photosensitivity (A/W) G9206-256W 1.0 G9211 to G9214 series G9205 series 0.5 0 0.5 2.5 2.0 1.5 1.0 3.0 Wavelength (µm) KMIRB0071EB Spectral transmittance characteristic of window material (typical example) Linearity error (G9213-256S) (Ta=25 °C) 100 20 10 Linearity error (%) Transmittance (%) 95 90 85 80 75 70 0.5 (Typ. Td=-10 °C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, CE=16 nV/e-, f=250 kHz) 0 -10 -20 -30 -40 -50 1.0 1.5 2.0 2.5 3.0 Wavelength (µm) 1 10 100 1000 10000 Output voltage (mV) KMIRB0070EA KMIRB0069EA 7 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Pin connections (top view) 256 PIXELS 512 PIXELS Cf SELECT RESET TE - TE + AD-TRIG Vdd Vss INP CLK THERM THERM CASE Cf SELECT RESET-ODD TE - RESET-EVEN TE + AD-TRIG-ODD Vdd Vss INP CLK-ODD AD-TRIG-EVEN THERM THERM CASE CLK-EVEN Vref Vref VIDEO VIDEO-ODD VIDEO-EVEN KMIRC0013EA Terminal name CLK Input/Output Input (CMOS logic compatible) RESET Input (CMOS logic compatible) Vdd Vss INP Input Input Input Cf SELECT Input CASE THERM Output TE+, TE- Input AD-TRIG VIDEO Vref Output Output Input Function and recommended connection Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. The width of the reset pulse is integration time. Supply voltage for operating the signal processing circuit in the CMOS chip Ground for the signal processing circuit in the CMOS chip Reset voltage for the charge amplifier array in the CMOS chip Voltage that determines the conversion efficiency in the CMOS chip. Low gain (CE=16 nV/e-) at 0 V, and high gain (CE=320 nV/e-) at 5 V. This terminal is electrically connected to the package. Thermistor for monitoring temperature inside the package Power supply terminal for the thermoelectric cooler that cools the photodiode array. No connection for room temperature operation type. Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Reset voltage for the offset compensation circuit in the CMOS chip Connection example InGaAs linear image sensor CLK Reset Buffer amp Vref Video Vdd Cf_select INP AD_trig Buffer amp Vss KMIRC0012EA 8 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Specifications of TE-cooler (Ta=25 °C, Vdd=5 V, INP=4.5 V) Parameter Condition TE-cooler allowable current TE-cooler allowable voltage Temperature difference*10 Thermistor resistance Thermistor power dissipation One-stage TE-cooler Min. Typ. Max. 1.8 5.0 40 4.85 5.00 5.15 0.2 Symbol Ic Max. Vc Max. Δt Rth Pth *11 Two-stage TE-cooler Min. Typ. Max. 2.8 4.0 50 4.85 5.00 5.15 0.2 Unit A V °C kΩ mW *10: This is a temperature difference between the surface of active area and the heat radiating portion of package. *11: One-stage thermoelectrically cooled type: Ic=1.4 A, two-stage thermoelectrically cooled type: Ic=2.6 A. TE-cooler temperature characteristic (Ta=25 °C, Vdd=5 V, INP=4.5 V) G9205 to G9208 series (Typ. heatsink 0.5 °C/W) Voltage Temperature difference 3.5 4 30 3 20 2 10 0 30 1.5 20 1.0 10 0.5 0 1 -10 0 Voltage (V) 2.0 2 -10 0 Current (A) 50 40 40 1 60 5 2.5 0 Voltage Temperature difference 6 50 0 (Typ. heatsink 0.4 °C/W) 7 60 3.0 Voltage (V) 70 Temperature difference (°C) 4.0 Temperature difference (°C) G9211 to G9214 series 1 2 3 Current (A) KMIRB0031EC KMIRB0032EC Thermistor temperature characteristic 5 Thermistor resistance (Ω) 10 A relation between the thermistor resistance and absolute temperature is expressed by the following equation. 104 R1=R2 × exp B (1/T1 - 1/T2) 103 240 R1: Resistance at T1 [K] R2: Resistance at T2 [K] B : B constant (B=3200 K ± 2%) Thermistor resistance = 5 kΩ ± 3% (298 K) 250 260 270 280 290 300 Temperature (K) KMIRB0041EB 9 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Dimensional outline (unit: mm) 63.5 ± 0.15 53.3 ± 0.15 38.1 ± 0.15 2.54 ± 0.15 35.6 ± 0.15 R 1.59 27.2 ± 0.15 15 20.3 ± 0.15 3.0 ± 0.15 10.2 ± 0.15 22.9 ± 0.15 25.4 ± 0.15 28 1 2 14 Photosensitive area left side: 1ch 1.0 ± 0.2 6.4 ± 1 C A B Index mark 2.54 ± 0.15 0.45 ± 0.05 Type no. A Photosensitive surface B C 5.8 ± 0.2 3.4 ± 0.3 G9205 to G9208 series 7.25 ± 0.2 6.85 ± 0.2 4.3 ± 0.3 G9211 to G9214 series 6.15 ± 0.2 Center accuracy of photosensitive area: ±0.3 mm or less (with package center as reference point) Rotation accuracy of photosensitive area: ±2° or less (with package center as reference point) Chip material: InGaAs Package material: FeNi alloy Lead treatment: Ni/Au plating Lead material: FeNiCo alloy Window material: sapphire Refractive index of window material: n=1.76 Window material thickness: 0.66 mm AR coat: coated (1.55 µm peak) Window sealing method: brazing Cap sealing: welding KMIRA0011ED Multichannel detector head C8061-01, C8062-01 (sold separately) The C8061/C8062-01 series are high sensitivity multichannel detector heads for use with InGaAs linear image sensors. The C8061-01 is designed for the one-stage TE-cooled InGaAs linear image sensors and the C8062-01 for two-stage TE-cooled InGaAs linear image sensors. The C8061-01 and C8062-01 incorporate a low-noise driver/amplifier circuit that provide reliable operation from simple external signals. They also include a highly stable temperature controller that cools the sensor to a preset temperature level (C8061-01: Ts= -10 °C, C8062-01: Ts= -20 °C) as soon as the power is turned on. If the cooler fails and overheat occurs, the built-in protection circuit automatically turns off the power to maintain safety. Despite its compact size, the housing configuration is designed for good heat dissipation, and threaded mounting holes on the front panel allow connections to other devices such as monochromators. Controller for multichannel detector head C7557-01 is also available. The software supplied with the C7557-01 allows easy control of the multichannel detector head and data acquisition. Features Designed for InGaAs linear image sensor C8061-01: One-stage TE-cooled type C8062-01: Two-stage TE-cooled type Built-in driver/amplifier and temperature circuit Highly stable temperature controller Cooling temperature (Ta=10 to 30 °C) fixed at -10 ± 0.1 °C (C8061-01), -20 ± 0.1 °C (C8062-01) Simple signal input operation Compact configuration 10 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Connection Shutter* timing pulse AC cable (100 to 240 V included with C7557-01) Trig. POWER Dedicated cable (included with C7557-01) SIGNAL I/O USB cable (included with C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC (USB 2.0/3.0) [Windows 7 (32-bit, 64-bit)/ Windows 8 (64-bit)/ Windows 8.1 (64-bit)] * Shutter, etc. are not available. KACCC0402ED Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMIR1011E11 Jul. 2015 DN 11