Phototransistors PNZ121S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features Stable operations in high illuminance region Low dark current 12.5 min. Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V IC 10 mA Collector current 2 1 1: Emitter 2: Collector Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle ICE(L) *3 Conditions min VCE = 10V VCE = 10V, L = 1000 lx*1 typ max Unit 1 100 nA 280 µA 120 λP VCE = 10V 800 nm θ Measured from the optical axis to the half power point 30 deg. 1 µs 1.3 µs Rise time tr*2 Fall time tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100Ω *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω *3 I CE(L) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class Q R S T ICE(L) (µA) 120 to180 160 to 200 180 to 235 210 to 280 Black Red Green — Color indication 1 Phototransistors PNZ121S PC — Ta ICE(L) — VCE ICE(L) — L 10 4 600 VCE = 10V Ta = 25˚C T = 2856K 40 30 20 10 ICE(L) (µA) 50 500 L =2000 lx 400 1750 lx 300 Collector photo current ICE(L) (µA) Ta = 25˚C T = 2856K Collector photo current Collector power dissipation PC (mW) 60 1500 lx 1250 lx 200 1000 lx 750 lx 100 500 lx 10 3 10 2 10 250 lx 40 60 80 100 Ta (˚C ) 0 4 ICEO — Ta VCE = 10V 0 20 20 40 Ambient temperature 60 80 1000 lx 10 2 50 40 30 20 40 60 80 60 40 80 0 200 100 30˚ 40˚ 50˚ 60˚ 70˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) 10 2 VCC = 10V Ta = 25˚C 10 VCC = 10V Ta = 25˚C 10 tr (µs) 60 VCE = 10V Ta = 25˚C tr — ICE(L) Rise time 70 Relative sensitivity S (%) 90 20 10 2 100 80 0 Ambient temperature 20˚ 10 4 20 Ta (˚C ) 10˚ 10 3 L (lx) Spectral sensitivity characteristics 100 L = 1500 lx 10 – 20 100 10 2 Illuminance VCE = 10V T = 2856K Directivity characteristics 0˚ 1 10 24 VCE (V) Relative sensitivity 1 10 –1 – 20 16 ICE(L) — Ta ICE(L) (µA) 10 12 10 3 Collector photo current ICEO (nA) 10 2 Dark current 10 3 8 Collector to emitter voltage S (%) 20 tf (µs) 0 Ambient temperature 0 RL = 1kΩ 1 500Ω 100Ω 10 –1 Fall time 0 – 20 RL = 1kΩ 1 500Ω 100Ω 10 –1 80˚ 90˚ 10 –2 10 –2 10 –1 Collector photo current 2 1 10 ICE(L) (mA) 10 –2 10 –2 10 –1 Collector photo current 1 10 ICE(L) (mA)