Small Signal Transistor Arrays UNA0228 (UN228) Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm For motor drives 10 0.2+0.1 –0.0 0.4±0.1 9 8 7 6 0.5 Parameter NPN Symbol Rating Unit VCBO −12 V Collector-emitter voltage (Base open) VCEO −10 V Emitter-base voltage (Collector open) VEBO −7 V IC −1 A Peak collector current ICP −2.5 A Collector-base voltage (Emitter open) VCBO 12 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 7 V Overall Collector current IC 1 A Peak collector current ICP 2.5 A PT 0.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Total power dissipation * 3 4 5 0.9±0.1 6.5±0.3 12° Collector-base voltage (Emitter open) Collector current 2 0.8 1.5±0.1 1.5 +0.2 –0.1 1 ■ Absolute Maximum Ratings Ta = 25°C PNP 0.5±0.2 5.5±0.3 7.7±0.3 • Small and lightweight • Low power consumption • Low voltage drive • With 4 elements incorporated 45° 12° ■ Features 1: Emitter 2: Base 3: Collector 4: Base 5: Emitter 6: Emitter 7: Base 8: Collector 9: Base 10: Emitter SO10-G1 Package Marking Symbol: UN228 Internal Connection 10 9 8 7 6 1 2 3 4 5 Note) *: When the dissipation on one device is TC = 25°C Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJK00049BED 1 UNA0228 ■ Electrical Characteristics Ta = 25°C ± 3°C • PNP Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −12 Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −10 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Forward current transfer ratio *1 hFE VCE = −1 V, IC = − 0.5 A VCE(sat) IC = −1 A, IB = −30 mA − 0.2 VCB = −6 V, IE = 50 mA, f = 200 MHz 150 MHz 65 pF Collector-emitter saturation voltage *1 Transition frequency fT Conditions Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz Forward voltage *2 VF IF = −1 A Min Typ Max Unit V 200 −1 µA 800 − 0.3 V −1.5 V Max Unit • NPN Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 12 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 10 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 hFE VCE = 1 V, IC = 0.5 A VCE(sat) IC = 1 A, IB = 30 mA 0.2 Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Conditions Min Typ V 200 1 µA 800 0.3 V VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 50 pF Forward voltage *2 VF IF = 1 A Transition frequency fT 1.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Application to the built-in diode 2 SJK00049BED UNA0228 Common characteristics chart PT Ta Total power dissipation PT (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of PNP transistor block IC VBE −6 Ta = 25°C −5 −3.2 IB = −14 mA −2.4 −12 mA −10 mA −8 mA −1.6 −6 mA Collector current IC (A) −4.0 Collector current IC (A) VCE(sat) IC VCE = −1 V −4 mA − 0.8 25°C −4 Ta = 75°C −3 −25°C −2 0 −4 −6 −8 −10 −2 0 − 0.4 − 0.8 −1.2 0 Forward current transfer ratio hFE VCE = −1 V 500 Ta = 75°C 25°C 300 −25°C 200 100 0 − 0.01 − 0.1 −1 Ta = 75°C 25°C −25°C −2.0 −2.4 −10−3 − 0.01 − 0.1 −1 −10 Collector current IC (A) Cob VCB −1 Collector current IC (A) −10 Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 400 −1.6 Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) 600 IC / IB = 100/3 −10−2 −1 −12 −10 −10−1 −2 mA 0 Collector-emitter saturation voltage VCE(sat) (V) IC VCE −4.8 240 f = 1 MHz IE = 0 Ta = 25°C 200 160 120 80 40 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) SJK00049BED 3 UNA0228 Characteristics charts of NPN transistor block IC VBE 6 Ta = 25°C 3.2 IB = 14 mA 2.4 12 mA 10 mA 8 mA 1.6 6 mA 4 mA 0.8 0 2 4 6 8 10 25°C 4 Ta = 75°C 3 2 0 12 0 Collector-emitter voltage VCE (V) Ta = 75°C 25°C −25°C 200 100 0.1 1 Collector current IC (A) 4 Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE VCE = 1 V 400 0 0.01 0.8 1.2 1.6 2.0 2.4 10 120 f = 1 MHz IE = 0 Ta = 25°C 100 80 60 40 20 0 0.1 1 10 Collector-base voltage VCB (V) SJK00049BED 10 IC / IB = 100/3 1 Ta = 75°C 25°C 10−1 −25°C 10−2 10−3 0.01 0.1 1 Collector current IC (A) Cob VCB 500 300 0.4 Base-emitter voltage VBE (V) hFE IC 600 −25°C 1 2 mA 0 VCE = 1 V 5 Collector current IC (A) Collector current IC (A) 4.0 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 4.8 100 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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