IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • P-Channel - 250 RDS(on) () VGS = - 10 V • Surface Mount (IRFR9214, SiHFR9214) 3.0 Qg (Max.) (nC) 14 • Straight Lead (IRFU9214, SiHFU9214) Qgs (nC) 3.1 • Advanced Process Technology Qgd (nC) 6.8 • Fast Switching Configuration Single • Fully Avalanche Rated • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S DPAK (TO-252) IPAK (TO-251) DESCRIPTION G D Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. D G S G D S D P-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR9214-GE3 SiHFR9214TRL-GE3 SiHFR9214TR-GE3 SiHFU9214-GE3 IRFR9214PbF IRFR9214TRLPbFa IRFR9214TRPbFa IRFU9214PbF SiHFR9214-E3 SiHFR9214TL-E3a SiHFR9214T-E3a SiHFU9214-E3 Lead (Pb)-free Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V - 2.7 - 1.7 A - 11 0.40 W/°C EAS 100 mJ Currenta IAR - 2.7 A Repetitive Avalanche Energya EAR 5.0 mJ Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s PD 50 W dV/dt - 5.0 V/ns TJ, Tstg - 55 to + 150 260 °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 27 mH, Rg = 25 , IAS = - 2.7 A (see fig. 12). c. ISD - 2.7 A, dI/dt 600 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S13-0166-Rev. D, 04-Feb-13 Document Number: 91282 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient RthJA - - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 2.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 μA - 250 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.25 - V/°C VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 250 V, VGS = 0 V - - - 100 VDS = - 200 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance Forward Transconductance μA - - 3.0 gfs VDS = - 50 V, ID = - 1.7 A 0.9 - - S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 220 - - 75 - - 11 - - - 14 - - 3.1 RDS(on) ID = - 1.7 Ab VGS = - 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss pF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 6.8 Turn-On Delay Time td(on) - 11 - tr - 14 - - 20 - - 17 - - 4.5 - - 7.5 - - - - 2.7 S - - - 11 TJ = 25 °C, IS = - 2.7 A, VGS = 0 Vb - - - 5.8 V - 150 220 ns - 870 1300 nC Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VGS = - 10 V ID = - 1.7 A, VDS = - 200 V, see fig. 6 and 13b VDD = - 125 V, ID = - 1.7 A, Rg = 21 , RD = 70 , see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = - 1.7 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S13-0166-Rev. D, 04-Feb-13 Document Number: 91282 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 1 -4.5V 20μs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 TJ = 25 ° C 1 V DS = -50V 20μs PULSE WIDTH 0.1 4 100 -I D , Drain-to-Source Current (A) 1 -4.5V 20μs PULSE WIDTH TJ = 150 °C 10 100 -VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C S13-0166-Rev. D, 04-Feb-13 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 1 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics Fig. 1 - Typical Output Characteristics, TC = 25 °C 0.1 0.1 5 -VGS, Gate-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 10 TJ = 150 ° C ID = -2.7A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91282 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 300 Ciss 200 100 Coss 10 ISD , Reverse Drain Current (A) C, Capacitance (pF) 400 Vishay Siliconix Crss 0 1 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 1.0 100 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage -IID , Drain Current (A) -VGS , Gate-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY RDS(on) 12 8 10 100us 1 1ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 3 6 9 12 15 0.1 10ms TC = 25 °C TJ = 150 °C Single Pulse 10 100 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area S13-0166-Rev. D, 04-Feb-13 5.0 100 VDS =-200V VDS =-125V VDS =-50V 0 4.0 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = -1.7 A 16 3.0 VSD ,Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V) 20 V GS = 0 V 2.0 1000 Document Number: 91282 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix RD VDS 3.0 VGS D.U.T. Rg +VDD -ID , Drain Current (A) 2.5 - 10 V 2.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1.5 Fig. 10a - Switching Time Test Circuit 1.0 0.5 td(on) td(off) tf tr VGS 10 % 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.00001 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S13-0166-Rev. D, 04-Feb-13 Document Number: 91282 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix L VDS IAS Rg + VDD A D.U.T. IAS - 20 V tp Driver 0.01 Ω tp 15 V VDS Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 200 ID -1.3A -1.8A BOTTOM -2.8A TOP 160 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S13-0166-Rev. D, 04-Feb-13 Fig. 13b - Gate Charge Test Circuit Document Number: 91282 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91282. S13-0166-Rev. D, 04-Feb-13 Document Number: 91282 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-251AA (HIGH VOLTAGE) 4 3 E1 E Thermal PAD 4 b4 θ2 4 A 0.010 0.25 M C A B L2 4 c2 A θ1 B D D1 A C 3 Seating plane 5 C L1 L3 (Datum A) C L B B A A1 3 x b2 View A - A 2xe c 3xb 0.010 0.25 M C A B Plating 5 b1, b3 Base metal Lead tip c1 (c) 5 (b, b2) Section B - B and C - C MILLIMETERS DIM. MIN. MAX. INCHES MIN. MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 - A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265 4.32 - 0.170 - b 0.64 0.89 0.025 0.035 E1 b1 0.65 0.79 0.026 0.031 e b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380 b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090 b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050 2.29 BSC 2.29 BSC c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060 c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA. Document Number: 91362 Revision: 15-Sep-08 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000