GWS4621L

DATASHEET
Dual 20V N-Channel Power MOSFET
GWS4621L
Features
The GWS4621L is a dual 20V, 8.8mΩ, N-channel power
MOSFET used for Li-ion battery protection. It is offered in a
1.85mmx1.85mm LGA with a very low thickness profile,
0.29mm typical thickness. It has extremely high power
density, reducing the board size of the Li-ion battery power
system. Designed for handheld devices with a high level of ESD
protection.
• Monolithic dual MOSFET
• Low rDS(ON) in a small footprint
• Ultra low gate charge and figure of merit
• LGA chip scale package
• Low thermal resistance
Applications
• Li-ion battery protection
PRODUCT SUMMARY
V(BR)SSS
ID = 250µA
20V
Minimum
• Portable devices, cell phones, PDA
rDS(ON)
VGS = 4.5V
8.8mΩ
Typical
• Rated for short-circuit and overcurrent protection
• Integrated G-S diodes provide ESD protection of 2.5kV HBM
FET1
Gate1
Gate2
Source1
Source2
FIGURE 1. EQUIVALENT CIRCUIT
December 21, 2015
FN8784.1
1
2
S1
G1
S2
G2
4
3
FET2
1
FIGURE 2. PAD VIEW, 1.815mm x 1.815mm
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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GWS4621L
Ordering Information
PART NUMBER
TEMP RANGE
(°C)
PART MARKING
GWS4621L
21
Pin Configuration
GWS2350S
(4 BUMP WLCSP)
BOTTOM VIEW
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1
2
S1
G1
S2
G2
4
3
2
-55 to +150
PACKAGE
(RoHS Compliant)
4 BUMP WLCSP
Pin Descriptions
PIN #
PIN NAME
DESCRIPTION
1
S1
Source of FET1
2
G1
Gate of FET1
3
G2
Gate of FET2
4
S2
Source of FET2
FN8784.1
December 21, 2015
GWS4621L
Absolute Maximum Ratings
Thermal Information
(Note 1)
Source-to-Source Voltage (VDS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-20V
Gate-to-Source Voltage (VGS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±8V
Source Current (IS) (Note 2)
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . .10.1A (10s), 6.5A (Steady State)
TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . .8.1A (10s), 5.2A (Steady State)
Source Current (RthjFoot) TF = +25°C . . . . . . . . . . . . . . 15A (Steady State)
Pulsed Source Current (ISM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5kV
Thermal Resistance (Typical)
JA (°C/W) JF (°C/W)
t ≤10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35
Steady State . . . . . . . . . . . . . . . . . . . . . . . . .
85
16
Maximum Power Dissipation (PD) (Note 2)
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . 3.6W (10s) 1.47W (Steady State)
TA = +70°C . . . . . . . . . . . . . . . . . . . . .2.29W (10s) 0.94W (Steady State)
Junction and Storage Temperature Range (TJ, Tstg). . . . .-55°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
1. TJ = +25°C unless otherwise noted.
2. Surface mounted on FR4 board.
Electrical Characteristics
SYMBOL
TJ = +25°C unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
(Note 3)
TYP
(Note 4)
MAX
(Note 3)
UNIT
STATIC
V(BR)SSS
Source-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
ISSS
Zero Gate Voltage Source Current
VGS = 0V, VDS = 20V
1
µA
IGSS
Gate Body Leakage
VDS = 0V VGS = ±6V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1mA
rDS(ON)
Drain-to-Source On-State Resistance (Note 5) VGS = 4.5V, ID = 3A
rSS(ON)
Source-to-Source On-State Resistance
(Note 5)
V
0.5
0.8
1.5
V
6.0
8.8
9.8
mΩ
VGS = 4.0V, ID = 3A
7.0
9.0
10.3
mΩ
VGS = 3.1V, ID = 3A
8.0
10.0
12.0
mΩ
VGS = 2.5V, ID = 3A
9.0
11.5
13.5
mΩ
TJ = +25°C
12.0
17.5
19.5
mΩ
TJ = +50°C
12.0
21.0
23.0
mΩ
TJ = +25°C
14.0
18.0
20.5
mΩ
TJ = +50°C
14.0
22.0
24.0
mΩ
VGS = 3.1V, IS = 3A
TJ = +25°C
16.0
20.0
24.0
mΩ
TJ = +50°C
16.0
23.0
27.0
mΩ
VGS = 2.5V, IS = 3A
TJ = +25°C
18.0
23.0
27.0
mΩ
TJ = +50°C
18.0
26.0
30.0
mΩ
1.0
V
VGS = 4.5V, IS = 3A
VGS = 4.0V, IS = 3A
VSS
20
Source-to-Source Diode Voltage
VGS = 0, IS = 6.5A
0.8
Qg
Total Gate Charge
VSS = 10V, IS = 5.0A, VGS = 4.0V
11
nC
Ciss
Input Capacitance
VSS = 10V, VGS = 0V, f = 1MHz
1125
pF
Coss
Output Capacitance
375
pF
Crss
Reverse Transfer Capacitance
188
pF
DYNAMIC
NOTES:
3. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
4. Typical values are for TA = +25°C.
5. Good Kelvin measurement required.
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GWS4621L
Test Circuit Examples for Measuring FET1 Key Parameters
S2
S2
A
G2
G2
G1
G1
+V
A
±V
S1
S1
FIGURE 3. ISSS TEST CIRCUIT
FIGURE 4. IGSS TEST CIRCUIT
S2
S2
A
G2
G2
V
V
G1
G1
+V
±V
S1
S1
FIGURE 6. rSS(ON) TEST CIRCUIT
FIGURE 5. VGS(th) TEST CIRCUIT
S2
4.5V
G2
V
V
G1
S1
FIGURE 7. VFS-S TEST CIRCUIT
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Typical Performance Curves
10
60
9
IS-SOURCE CURRENT (A)
IS-SOURCE CURRENT (A)
VG S = 4.5V
50
VGS = 4.0V
40
VGS = 3.1V
30
VGS = 2.5V
20
10
8
7
6
5
TJ = +125°C
TJ = -25°C
4
3
TJ = +75°C
2
1
0
0
0
1
1
2
2
3
VSS - SOURCE-TO-SOURCE VOLTAGE (V)
0
3
1
VGS - GATE-TO-SOURCE (V)
40
VGS = 2.5V
35
VGS = 3.1V
30
VGS
VGS = 4.0V
= 4.5V
25
20
15
10
0
1
10
100
140
120
100
80
60
IS = 3A
40
20
0
0
5
IS- SOURCE CURRENT (A)
VGS = 2.5V
VGS = 3.1V
VGS = 4.0V
35
VGS = 4.5V
30
25
20
15
10
-50
-25
0
25
50
75
100
TJ - JUNCTION TEMPERATURE
125
( o C)
FIGURE 12. SOURCE-TO-SOURCE ON-STATE RESISTANCE vs
JUNCTION TEMPERATURE
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5
15
150
FIGURE 11. SOURCE-TO-SOURCE ON-STATE RESISTANCE vs
GATE-TO-SOURCE VOLTAGE
VGS(th) - GATE THRESHOLD VOLTAGE (V)
50
40
10
VGS - GATE-TO-SOURCE VOLTAGE (V)
FIGURE 10. SOURCE-TO-SOURCE ON-STATE RESISTANCE vs SOURCE
CURRENT
45
2
FIGURE 9. TRANSFER CHARACTERISTICS
rSS(ON) - ON-STATE RESISTANCE (m)
rSS(ON) - ON-STATE RESISTANCE (m)
FIGURE 8. OUTPUT CHARACTERISTICS
rSS(ON) - ON-STATE RESISTANCE (m)
TJ = +25°C
1 .2
1 .0
I S = 1mA
0 .8
0 .6
0 .4
0 .2
-50
-25
0
25
50
75
100
TJ - JUNCTION TEMPERATURE
125
150
(o C)
FIGURE 13. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FN8784.1
December 21, 2015
GWS4621L
100
4.0
3.5
IS-SOURCE CURRENT (A)
VGS - GATE-TO-SOURCE VOLTAGE (V)
Typical Performance Curves (Continued)
VSS = 10V
I S = 5A
VGS = 0 to 4.0 V
3.0
2.5
2.0
1.5
1.0
TJ = +75°C
TJ = +25°C
0.5
TJ = -25°C
1
0.0
0
0.0
5
10
QG - TOTAL GATE CHARGE (n C)
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSS-SOURCE-TO-SOURCE VOLTAGE (V)
2.0
FIGURE 15. SOURCE-TO-SOURCE DIODE FORWARD VOLTAGE
FIGURE 14. GATE CHARGE
100
IS-SOURCE CURRENT (A)
100 00
C-CAPACITANCE (pF)
TJ = +125°C
10
Ciss
100 0
Coss
100
Crss
rSS(ON) LIMITED
VGS = 4.5V
10
1ms
1
0.1
10ms
100ms
TA = +25oC,
SINGLE PULSE
DC
0.01
10
0
5
10
15
0.1
20
1
10
100
VSS - SOURCE-TO-SOURCE VOLTAGE (V)
VSS - SOURCE-TO-SOURCE VOLTAGE (V)
FIGURE 17. MAXIMUM RATED FORWARD BIASED SAFE OPERATING
AREA
FIGURE 16. CAPACITANCE
1.00
r(t) - TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.50
0.20
0.10
0.10
0.05
0.02
SINGLE PULSE
0.01
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
t - TIME (s)
FIGURE 18. TRANSIENT THERMAL RESPONSE, JUNCTION-TO-AMBIENT
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Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
CHANGE
December 21, 2015
FN8784.1
Added “Note 1. TJ = +25°C unless otherwise noted.” to Abs Max on page 3.
October 30, 2015
FN8784.0
Initial release
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address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
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Reliability reports are also available from our website at www.intersil.com/support.
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GWS4621L
Outline Drawing (Unit: mm)
1.815
4
1: Source 1
2: Gate 1
3: Gate 2
4: Source 2
1.815
Top View
3
1
2
1-pin index mark S1
0.29
Side View
0.65
+
+
+
0.65
Pad View
+
ᶲ 0.35
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