SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses Qgs (nC) 46 • Ultra low gate charge (Qg) Qgd (nC) 79 • Avalanche energy rated (UIS) Configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-247AC APPLICATIONS • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) G S D G S N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG47N65E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 47 30 A IDM 139 3.3 W/°C Single Pulse Avalanche Energy b EAS 1410 mJ Maximum Power Dissipation PD 417 W TJ, Tstg -55 to +150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c for 10 s dV/dt 37 9 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 10 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-0291-Rev. D, 23-Feb-15 Document Number: 91557 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.3 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 650 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 25 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS μA - 0.060 0.072 Ω gfs VDS = 30 V, ID = 24 A - 16.7 - S Input Capacitance Ciss 5682 - Coss - 251 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output Capacitance - 1 - Effective Output Capacitance, Energy Related a Co(er) - 192 - Effective Output Capacitance, Time Related b Co(tr) - 665 - - 182 273 - 46 - Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V ID = 24 A Dynamic pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 24 A, VDS = 520 V Gate-Drain Charge Qgd - 79 - Turn-On Delay Time td(on) - 47 94 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg VDD = 520 V, ID = 6 A, VGS = 10 V, Rg = 9.1 Ω - 87 131 - 156 234 - 103 206 f = 1 MHz, open drain - 0.64 - - - 47 - - 139 nC ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 24 A, VGS = 0 V TJ = 25 °C, IF = IS = 24 A, dI/dt = 100 A/μs, VR = 25 V - 0.9 1.2 V - 753 1506 ns - 14 28 μC - 28 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S15-0291-Rev. D, 23-Feb-15 Document Number: 91557 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N65E www.vishay.com Vishay Siliconix TYPCIAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 90 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 3 TJ = 25 °C ID = 24 A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 150 60 30 6V 2.5 2 1.5 VGS = 10 V 1 0.5 5V 0 - 60 - 40 - 20 0 0 5 60 20 25 30 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 80 15 100 000 ġ TJ = 150 °C ġ Ciss 10 000 7V 40 6V ġ ġ ġ ġ VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1000 100 Coss ġ ġ 10 Crss ġ 20 1 5V 0 0.1 0 10 5 20 15 25 30 0 VDS, Drain-to-Source Voltage (V) 100 200 300 500 400 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 35 150 30 5000 120 25 90 60 Coss (pF) ID, Drain-to-Source Current (A) 600 VDS, Drain-to-Source Voltage (V) TJ = 150 °C 20 Coss Eoss 500 15 Eoss (μJ) ID, Drain-to-Source Current (A) 100 10 Capacitance (pF) 0 10 30 TJ = 25 °C 5 VDS = 26 V 50 0 0 5 10 15 20 25 0 100 200 300 VDS 400 500 0 600 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-0291-Rev. D, 23-Feb-15 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91557 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N65E www.vishay.com Vishay Siliconix 50 VDS = 520 V VDS = 325 V VDS = 130 V 20 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 4 0 40 30 20 10 0 60 0 120 180 240 300 360 25 Qg, Total Gate Charge (nC) 50 75 100 125 150 TC, Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature 850 825 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 100 TJ = 150 °C TJ = 25 °C 10 1 0.1 0.4 0.6 0.8 1 1.2 775 750 725 700 675 650 ID = 250 μA 625 VGS = 0 V 0.2 800 1.4 1.6 VSD, Source-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage 600 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage 1000 Operation in this Area Limited by RDS(on) IDM = Limited ID, Drain Current (A) 100 10 100 μs Limited by RDS(on)* 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 0.1 1 10 ms BVDSS Limited 10 100 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is s 1000 Fig. 9 - Maximum Safe Operating Area S15-0291-Rev. D, 23-Feb-15 Document Number: 91557 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N65E www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 17 - Basic Gate Charge Waveform Fig. 14 - Switching Time Waveforms Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ D.U.T RG 12 V + - IAS 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-0291-Rev. D, 23-Feb-15 Document Number: 91557 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N65E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91557. S15-0291-Rev. D, 23-Feb-15 Document Number: 91557 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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