This product complies with the RoHS Directive (EU 2002/95/EC). FC551601 Silicon N-channel MOS FET For switching circuits Overview Package FC551601 is N-channel dual type small signal MOS FET employed small size surface mounting package. Code SMini5-F3-B Pin Name 1: Gate (FET1) 2: Source (FET1/2) 3: Gate (FET2) Features Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V) High-speed switching Small size surface mounting package: SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Marking Symbol: V5 Internal Connection Packaging (D1) 5 Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter FET1 FET2 Overall 4: Drain (FET2) 5: Drain (FET1) Symbol Rating Unit Drain-source surrender voltage VDSS 60 V Gate-source surrender voltage VGSS ±12 V Drain current ID 100 mA Peak drain current IDP 200 mA Total power dissipation PT 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Publication date: January 2011 Ver. AED (D2) 4 FET2 FET1 1 (G1) 2 (S) 3 (G2) 1 This product complies with the RoHS Directive (EU 2002/95/EC). FC551601 Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 mA Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 mA Gate threshold voltage VTH ID = 1.0 mA, VDS = 3.0 V 1.2 1.5 V ID = 10 mA, VGS = 2.5 V 8 15 ID = 10 mA, VGS = 4.0 V 6 12 Drain-source ON resistance RDS(on) Forward transfer admittance Yfs 60 Unit V 0.9 ID = 10 mA, VDS = 3.0 V 20 W 60 mS 12 pF 7 pF 3 pF Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss Reverse transfer capacitance (Common source) Crss Turn-on time * ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 100 ns Turn-off time * toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 100 ns VDS = 3 V, VGS = 0, f = 1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = 3 V ID = 10 mA RL = 300 Ω VGS = 0 V to 3 V VIN G D VOUT 90% 10% VOUT 50 Ω S 2 VIN ton Ver. AED 10% 90% toff This product complies with the RoHS Directive (EU 2002/95/EC). FC551601 FC551601_ ID-VGS ID VDS ID VGS 102 Ta = 25°C Drain current ID (mA) Drain current ID (mA) VGS = 4.0 V 60 VDS = 3 V 2.5 V 40 20 1.8 V 0.1 0.2 0.3 0.4 Ta = 85°C 25°C 10−1 −30°C 10−2 2.1 V 0 1 10−3 0.5 0 Drain-source voltage VDS (V) 2.5 1 10−1 0 2 4 6 8 10 Gate-source voltage VGS (V) PT Ta Ta = 25°C Total power dissipation PT (mW) Drain-source ON resistance RDS(on) (Ω) 2.0 10 200 VGS = 2.5 V 10 4.0 V 1 1 10 150 100 50 0 102 0 40 80 120 Drain current ID (mA) Ambient temperature Ta (°C) FC551601_Ciss , Crss , Coss -VDS FC551601_|Yfs|-ID Ciss , Crss , Coss VDS 25 160 Yfs ID 1 Ta = 25°C Ta = 25°C VDS = 3 V Forward transfer admittance |Yfs | (S) Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) 1.5 Ta = 25°C ID = 0.01 A FC654601_ PT-Ta RDS(on) ID 10−1 10−1 1.0 Gate-source voltage VGS (V) FC551601_ RDS(on)-ID 102 0.5 RDS(on) VGS 102 10 80 0 FC551601_ RDS(on)-VGS Drain-source ON resistance RDS(on) (Ω) 100 FC551601_ ID-VDS 20 10−1 15 Ciss 10 10−2 Coss 5 0 Crss 0 5 10 15 Drain-source voltage VDS (V) 20 10−3 1 10 102 103 Drain current ID (mA) Ver. AED 3 This product complies with the RoHS Directive (EU 2002/95/EC). FC551601 SMini5-F3-B Unit: mm 2.0 ±0.1 1.3 ±0.1 (0.65) 4 2.1 ±0.1 1.25 ±0.10 5 7° (0.425) (0.65) 1 2 3 +0.05 0.20 ±0.05 0.13 −0.02 0 to 0.10 0.7 ±0.1 (0.15) 7° 4 Ver. AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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