Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 2.8 –0.3 ■ Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● 0.65±0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 –0.05 ● +0.25 1.5 –0.05 2 Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 Ratings 0.8 Symbol 1.1 –0.1 Parameter 0.16 –0.06 (Ta=25˚C) +0.2 ■ Absolute Maximum Ratings JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1R (Ta=25˚C) Parameter Symbol Conditions min typ max Unit nA ICBO Collector to base voltage VCBO IC = –10µA, IE = 0 –15 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –2V, IC = –0.5A*2 130 hFE2 VCE = –2V, IC = –1A*2 60 Collector to emitter saturation voltage VCE(sat) IC = –0.4A, IB = –8mA – 0.16 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –0.4A, IB = –8mA – 0.8 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 130 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 Forward current transfer ratio VCB = –10V, IE = 0 –100 Collector cutoff current V 350 FE1 V MHz pF *2 *1h V Pulse measurement Rank classification Rank R S hFE1 130 ~ 220 180 ~ 350 Marking Symbol 1RR 1RS 1 2SB970 Transistor PC — Ta IC — VCE –1.0 IB=–10mA – 0.8 –9mA –8mA –7mA 200 160 120 –6mA –5mA – 0.6 80 –4mA –3mA – 0.4 40 –2mA – 0.2 –1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –2 –10 –3 –1 Ta=75˚C 25˚C –25˚C –1 –3 –10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Ta=–25˚C 75˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 200 500 300 –3 –10 VCB=–10V Ta=25˚C 180 400 –1 Collector current IC (A) fT — I E Ta=75˚C 25˚C –25˚C 200 100 160 140 120 100 80 60 40 20 0 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) 80 70 25˚C –1 VCE=–2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –6 –3 – 0.1 600 IC/IB=50 – 0.03 –5 –10 hFE — IC –100 – 0.1 –4 –30 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –3 IC/IB=50 – 0.3 Transition frequency fT (MHz) 0 Base to emitter saturation voltage VBE(sat) (V) Ta=25˚C 0 2 VBE(sat) — IC –100 –1.2 Collector current IC (A) Collector power dissipation PC (mW) 240 –10 1 3 10 30 Emitter current IE (mA) 100