SiHH14N60EF Datasheet

SiHH14N60EF
www.vishay.com
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Completely lead (Pb)-free device
650
RDS(on) typ. () at 25 °C
VGS = 10 V
• Low figure-of-merit (FOM) Ron x Qg
0.231
Qg max. (nC)
84
• Low input capacitance (Ciss)
Qgs (nC)
9
• Reduced switching and conduction losses
17
• Ultra low gate charge (Qg)
Qgd (nC)
Configuration
Single
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Pin 4
PowerPAK® 8 x 8
4
APPLICATIONS
Pin 1
• Server and telecom power supplies
1
2
3
• Switch mode power supplies (SMPS)
Pin 2
• Power factor correction power supplies (PFC)
3
• Lighting
Pin 3
N-Channel MOSFET
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
PowerPAK 8 x 8
Lead (Pb)-free and Halogen-free
SiHH14N60EF-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
UNIT
V
15
9
A
IDM
38
1.2
W/°C
Single Pulse Avalanche Energy b
EAS
173
mJ
Maximum Power Dissipation
PD
147
W
TJ, Tstg
-55 to +150
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dt c
dV/dt
70
21
V/ns
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.5 A.
c. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S16-0531-Rev. B, 28-Mar-16
Document Number: 91778
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH14N60EF
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
42
55
Maximum Junction-to-Case (Drain)
RthJC
0.64
0.85
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 10 mA
-
0.65
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
μA
-
0.231
0.266

gfs
VDS = 30 V, ID = 7 A
-
5.1
-
S
Input Capacitance
Ciss
1449
-
Coss
-
78
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output Capacitance
-
5
-
Effective Output Capacitance, Energy
Related a
Co(er)
-
45
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
191
-
-
42
84
-
9
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 7 A
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 10 V
ID = 7 A, VDS = 480 V
Gate-Drain Charge
Qgd
-
17
-
Turn-On Delay Time
td(on)
-
19
38
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VDD = 480 V, ID = 7 A,
VGS = 10 V, Rg = 9.1 
-
25
50
-
50
75
-
29
58
f = 1 MHz, open drain
0.4
0.8
1.6
-
-
15
-
-
36
nC
ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 7 A, VGS = 0 V
TJ = 25 °C, IF = IS = 7 A,
dI/dt = 100 A/μs, VR = 25 V
S
-
0.9
1.2
V
-
111
222
ns
-
0.6
1.2
μC
-
10
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
S16-0531-Rev. B, 28-Mar-16
Document Number: 91778
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH14N60EF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
40
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
30
ID = 7 A
TJ = 25 °C
RDS(on), Drain-to-Source On-Resistance
(Normalized)
20
10
2.5
2.0
1.5
1.0
VGS = 10 V
0.5
0
0
0
5
10
15
VDS, Drain-to-Source Voltage (V)
-60 -40 -20
20
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
24
10 000
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
TJ = 150 °C
Ciss
1000
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
TOP
18
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
12
6
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
100
Coss
Crss
10
0
1
0
5
10
15
VDS, Drain-to-Source Voltage (V)
20
0
100
200
300
400
500
VDS, Drain-to-Source Voltage (V)
600
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
40
10 000
10
9
8
30
7
1000
TJ = 150 °C
20
Eoss
Coss (pF)
ID, Drain-to-Source Current (A)
TJ = 25 °C
6
Coss
5
4
100
Eoss (μJ)
ID, Drain-to-Source Current (A)
TOP
3
10
2
1
VDS = 29.6 V
0
10
0
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-0531-Rev. B, 28-Mar-16
25
0
100
200
300
VDS
400
500
600
Fig. 6 - COSS and EOSS vs. VDS
Document Number: 91778
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH14N60EF
www.vishay.com
Vishay Siliconix
24
15
20
12
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
VDS = 480 V
VDS = 300 V
16
12
8
9
6
3
4
0
0
0
20
40
60
Qg, Total Gate Charge (nC)
80
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
50
75
100
125
TC, Case Temperature (°C)
150
Fig. 10 - Maximum Drain Current vs. Case Temperature
10
VDS, Drain-to-Source Breakdown Voltage (V)
ISD, Reverse Drain Current (A)
750
TJ = 150 °C
TJ = 25 °C
1
VGS = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage (V)
1.4
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area
Limited by RDS(on)
725
700
675
650
625
600
ID = 10 mA
575
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
IDM Limited
ID, Drain Current (A)
10
100 μs
Limited by RDS(on)*
1
1 ms
10 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
BVDSS Limited
0.01
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S16-0531-Rev. B, 28-Mar-16
Document Number: 91778
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH14N60EF
www.vishay.com
Vishay Siliconix
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
Pulse Time (s)
0.01
0.1
1
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
1
Duty Cycle = 0.5
Normalized Transient Thermal
Impedance, RthJA
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Time (s)
Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient
VDS
VGS
L
RD
Vary tp to obtain
required IAS
VDS
D.U.T.
RG
D.U.T
RG
+
- VDD
+
-
IAS
10 V
V DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
0.01 Ω
tp
Fig. 14 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Test Circuit
VDS
VDS
tp
90 %
VDD
VDS
10 %
VGS
td(on)
tr
td(off) tf
Fig. 15 - Switching Time Waveforms
S16-0531-Rev. B, 28-Mar-16
IAS
Fig. 17 - Unclamped Inductive Waveforms
Document Number: 91778
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH14N60EF
www.vishay.com
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 18 - Basic Gate Charge Waveform
Fig. 19 - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
Period
P.W.
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 20 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91778.
S16-0531-Rev. B, 28-Mar-16
Document Number: 91778
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8 Case Outline
D2
D3
2x
E3
0.1 C A
D
A
2x
0.1 C B
K
E
E2
PPAK 8x8
(8 mm x 8 mm)
L
B
e
Pin 1 dot 5, 6
by marking
TOP SIDE VIEW
b
0.08 C
A1
DIM.
A2
A
BACK SIDE VIEW
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
8
0.95
1.00
1.05
0.037
0.039
0.041
A1
0.00
-
0.05
0.000
-
0.002
1.05
0.037
A
A2
b4
020 ref.
0.95
1.00
MAX.
0.008 ref.
0.039
0.041
D
7.90
8.00
8.10
0.311
0.315
0.319
D2
7.10
7.20
7.30
0.280
0.283
0.287
D3
0.40 BSC
0.016 BSC
e
2.00 BSC
0.079 BSC
E
7.90
8.00
8.10
0.311
0.315
0.319
E2
4.30
4.35
4.40
0.169
0.171
0.173
E3
0.40 BSC
0.016 BSC
K
2.75 BSC
0.108 BSC
L
0.45
N3
0.50
0.55
8
0.018
0.020
0.022
8
Notes
1. Use millimeters as the primary measurement.
2. Dimensioning and tolerances conform to ASME Y14.5 M - 1994.
3. N is the number of terminals.
4. Package warpage max. 0.08 mm.
5. The pin 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body.
6. Exact shape and size of this feature is optional.
ECN: T15-0225-Rev. A, 18-May-15
DWG: 6041
Revision: 18-May-15
1
Document Number: 67859
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Minimum PADs for PowerPAK® 8 mm x 8 mm
8.3
7.3
0.68
4.45
0.4
2.65
0.37
0.7
1.1
2
Dimensions in millimeters
Revision: 07-Apr-16
Document Number: 68441
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000