DATASHEET

DATASHEET
80V, 500mA, 3-Phase MOSFET Driver
HIP4086, HIP4086A
Features
The HIP4086 and HIP4086A (referred to as the HIP4086/A)
are three phase N-Channel MOSFET drivers. Both parts are
specifically targeted for PWM motor control. These drivers
have flexible input protocol for driving every possible switch
combination. The user can even override the shoot-through
protection for switched reluctance applications.
• Independently drives 6 N-Channel MOSFETs in three-phase
bridge configuration
The HIP4086/A have a wide range of programmable dead
times (0.5µs to 4.5µs) which makes them very suitable for the
low frequencies (up to 100kHz) typically used for motor drives.
• Bootstrap supply max voltage up to 95VDC with bias supply
from 7V to 15V
• 1.25A peak turn-off current
• User programmable dead time (0.5µs to 4.5µs)
• Bootstrap and optional charge pump maintain the high-side
driver bias voltage.
The only difference between the HIP4086 and the HIP4086A
is that the HIP4086A has the built-in charge pumps disabled.
This is useful in applications that require very quiet EMI
performance (the charge pumps operate at 10MHz). The
advantage of the HIP4086 is that the built-in charge pumps
allow indefinitely long on times for the high-side drivers.
• Programmable bootstrap refresh time
To insure that the high-side driver boot capacitors are fully
charged prior to turning on, a programmable bootstrap refresh
pulse is activated when VDD is first applied. When active, the
refresh pulse turns on all three of the low-side bridge FETs
while holding off the three high-side bridge FETs to charge the
high-side boot capacitors. After the refresh pulse clears,
normal operation begins.
• Brushless Motors (BLDC)
Another useful feature of the HIP4086/A is the programmable
undervoltage set point. The set point range varies from 6.6V to
8.5V.
• Drives 1000pF load with typical rise time of 20ns and fall
time of 10ns
• Programmable undervoltage set point
Applications
• 3-phase AC motors
• Switched reluctance motor drives
• Battery powered vehicles
• Battery powered tools
Related Literature
• AN9642, “HIP4086 3-Phase Bridge Driver Configurations
and Applications”
• AN1829, “HIP4086 3-Phase BLDC Motor Drive
Demonstration Board, User Guide”
VDD
200
VDD
CHB
RDEL
BHB
VxHB - VxHS = 10V
Speed
AHI
ALI
Controller
Brake
BHI
BLI
HIP4086/A
AHO
BHO
Battery
24V...48V
CHO
CHS
BHS
AHS
CHI
CLI
VSS
ALO
BLO
CLO
OUTPUT CURRENT (µA)
AHB
150
100
50
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
JUNCTION TEMPERATURE (°C)
FIGURE 1. TYPICAL APPLICATION
March 27, 2015
FN4220.10
1
FIGURE 2. CHARGE PUMP OUTPUT CURRENT
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HIP4086, HIP4086A
Block Diagram (for clarity, only one phase is shown)
If undervoltage is active or if
DRIVE ENABLE
DIS is asserted, the high and
low-side drivers are turned off.
xHI 5
DIS 10
VDD 20
UVLO 8
VDD
COMMON WITH
ALL PHASES
16 xHB
EN
ADJUSTABLE
TURN-ON
DELAY
10ns
DELAY
UNDERVOLTAGE
DETECTOR
DELAY DISABLE
REFRESH
PULSE
RFSH 9
CHARGE
PUMP*
COMMON
WITH ALL
PHASES
LEVEL
SHIFTER
17 xHO
*The charge pump is
permanently disabled
in the HIP4086A.
18 xHS
VDD
COMMON WITH
ALL PHASES
ADJUSTABLE
TURN-ON
DELAY
xLI 4
21 xLO
6 VSS
COMMON WITH
ALL PHASES
RDEL 7
2µs Delay
If the voltage on RDEL is less than 100mV, the
turn-on delay timers are disabled and the high and
low-side drivers can be turned on simultaneously.
100mV
Truth Table
INPUT
OUTPUT
ALI, BLI, CLI
AHI, BHI, CHI
UV
DIS
RDEL
ALO, BLO, CLO
AHO, BHO, CHO
X
X
X
1
X
0
0
X
X
1
X
X
0
0
1
X
0
0
>100mV
1
0
0
0
0
0
X
0
1
0
1
0
0
X
0
0
1
0
0
0
<100mV
1
1
NOTE: X signifies that input can be either a “1” or “0”.
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2
FN4220.10
March 27, 2015
HIP4086, HIP4086A
Pin Configuration
HIP4086, HIP4086A
(24 LD PDIP, SOIC)
TOP VIEW
BHB 1
24 BHO
BHI 2
23 BHS
BLI 3
22 BLO
ALI 4
21 ALO
AHI 5
20 VDD
VSS 6
19 CLO
RDEL 7
18 AHS
UVLO 8
17 AHO
RFSH 9
16 AHB
DIS 10
15 CHS
CLI 11
14 CHO
CHI 12
13 CHB
Pin Descriptions
PIN NUMBER
SYMBOL
DESCRIPTION
16
1
13
AHB
BHB
CHB
(xHB)
High-Side Bias Connections. One external bootstrap diode and one capacitor are required for
each. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to each xHB
pin.
18
23
15
AHS
BHS
CHS
(xHS)
High-Side Source Connections. Connect the sources of the high-side power MOSFETs to these
pins. The negative side of the bootstrap capacitors are also connected to these pins.
5
2
12
AHI
BHI
CHI
(xHI)
High-Side Logic Level Inputs. Logic at these three pins controls the three high-side output
drivers, AHO (Pin 17), BHO (Pin 24) and CHO (Pin 14). When xHI is low, xHO is high. When xHI
is high, xHO is low. Unless the dead time is disabled by connecting RDEL (Pin 7) to ground, the
low-side input of each phase will override the corresponding high side input on that phase see “Truth Table” on page 2. If RDEL is tied to ground, dead time is disabled and the outputs
follow the inputs with no shoot-thru protection. DIS (Pin 10) also overrides the high-side inputs.
xHI can be driven by signal levels of 0V to 15V (no greater than VDD).
4
3
11
ALI
BLI
CLI
(xLI)
Low-Side Logic Level Inputs. Logic at these three pins controls the three low-side output
drivers ALO (Pin 21), BLO (Pin 22) and CLO (Pin 19). If the upper inputs are grounded then the
lower inputs control both xLO and xHO drivers, with the dead time set by the resistor at RDEL
(Pin 7). DIS (Pin 10) high level input overrides xLI, forcing all outputs low. xLI can be driven by
signal levels of 0V to 15V (no greater than VDD).
6
VSS
Ground. Connect the sources of the low-side power MOSFETs to this pin.
7
RDEL
Delay Time Set Point. Connect a resistor from this pin to VDD to set timing current that defines
the dead time between drivers - see Figure 18. All drivers turn off with minimal delay, RDEL
resistor prevents shoot-through by delaying the turn-on of all drivers. When RDEL is tied to VSS,
both upper and lowers can be commanded on simultaneously. While not necessary in most
applications, a decoupling capacitor of 0.1µF or smaller may be connected between RDEL and
VSS.
8
UVLO
Undervoltage Set Point. A resistor can be connected between this pin and VSS to program the
undervoltage set point - see Figure 19. With this pin not connected, the under voltage disable
is typically 6.6V. When this pin is tied to VDD , the under voltage disable is typically 6.2V.
9
RFSH
Refresh Pulse Setting. An external capacitor can be connected from this pin to VSS to increase
the length of the start up refresh pulse - see Figure 17. If this pin is not connected, the refresh
pulse is typically 1.5µs.
10
DIS
Disable Input. Logic level input that when taken high sets all six outputs low. DIS high
overrides all other inputs. With DIS low, the outputs are controlled by the other inputs. DIS can
be driven by signal levels of 0V to 15V (no greater than VDD).
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3
FN4220.10
March 27, 2015
HIP4086, HIP4086A
Pin Descriptions (Continued)
PIN NUMBER
SYMBOL
DESCRIPTION
17
24
14
AHO
BHO
CHO
(xHO)
High-Side Outputs. Connect to the gates of the high-side power MOSFETs in each phase.
20
VDD
Positive Supply. Decouple this pin to VSS (Pin 6).
21
22
19
ALO
BLO
CLO
(xLO)
Low-Side Outputs. Connect the gates of the low-side power MOSFETs to these pins.
NOTE: x = A, B or C.
Ordering Information
PART NUMBER
(Note 3)
PART
MARKING
TEMP RANGE
(°C)
CHARGE
PUMP
PACKAGE
PKG.
DWG. #
HIP4086AB (Note 1)
HIP4086AB
-40 to +125
Yes
24 Ld SOIC
M24.3
HIP4086ABZ (Notes 1, 2)
HIP4086ABZ
-40 to +125
Yes
24 Ld SOIC (Pb-free)
M24.3
HIP4086APZ (Note 2)
HIP4086APZ
-40 to +125
Yes
24 Ld PDIP (Pb-free)
E24.3
-40 to +125
No
24 Ld SOIC (Pb-free)
M24.3
HIP4086AABZ (Notes 1, 2) HIP4086AABZ
HIP4086DEMO1Z
HIP4086 Demonstration Board
NOTES:
1. Add “T*”, suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte
tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil
Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for HIP4086, HIP4086A. For more information on MSL, please see Technical
Brief TB363.
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FN4220.10
March 27, 2015
HIP4086, HIP4086A
Absolute Maximum Ratings (Note 7)
Thermal Information
Supply Voltage, VDD Relative to GND . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
Logic Inputs (xLI, xHI) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to VDD + 0.3V
Voltage on xHS . . . . . . . . . . . . . . -6V (Transient) to 85V (-40°C to +150°C)
Voltage on xHB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VxHS - 0.3V to VxHS +VDD
Voltage on xLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSS - 0.3V to VDD +0.3V
Voltage on xHO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VxHS - 0.3V to VxHB +0.3V
Phase slew rate (on xHS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
SOIC Package (Notes 4, 6) . . . . . . . . . . . . .
75
22
SOIC Package HIP4086AABZ (Notes 5, 6)
51
22
PDIP* Package (Notes 4, 6) . . . . . . . . . . . .
70
29
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Junction Temp Range . . . . . . . . . . . . . . . . . . . .-40°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Maximum Recommended Operating
Conditions
*Pb-free PDIPs can be used for through-hole wave solder processing only.
They are not intended for use in Reflow solder processing applications.
Supply Voltage, VDD Relative to GND . . . . . . . . . . . . . . . . . . . . . . . 7V to 15V
Logic Inputs (xLI, xHI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to VDD
Voltage on xHB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VxHS + VDD
Voltage on xHS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 80V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +150°C
RDEL range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10kΩ to 100kΩ
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. For JC, the “case temp” location is taken at the package top center.
7. Replace x with A, B, or C.
DC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, RDEL = 20k, RUV = , Gate Capacitance (CGATE) = 1000pF, unless
otherwise specified. Boldface limits apply across the operating junction temperature range, -40°C to +150°C.
TJ = +25°C
PARAMETER
TEST CONDITIONS
MIN
(Note 9)
TYP
TJ = -40°C TO +150°C
MAX
(Note 9)
MIN
(Note 9)
MAX
(Note 9)
UNITS
SUPPLY CURRENTS
VDD Quiescent Current
VDD Operating Current
xHI = 5V, xLI = 5V (HIP4086)
2.7
3.4
4.2
2.1
4.3
mA
xHI = 5V, xLI = 5V (HIP4086A)
2.3
2.4
2.6
2.1
2.7
mA
f = 20kHz, 50% Duty Cycle (HIP4086)
6.3
8.25
10.5
5
11
mA
f = 20kHz, 50% Duty Cycle (HIP4086A)
3.1
3.6
4.1
2.8
4.4
mA
-
xHI = 0V (HIP4086)
xHB On Quiescent Current
-
xHI = 0V (HIP4086A)
xHB Off Quiescent Current
xHB Operating Current
80
100
100
µA
200
µA
xHI = VDD (HIP4086)
0.6
0.8
1.3
0.5
1.4
mA
xHI = VDD (HIP4086A)
0.8
0.9
1
0.7
1.2
mA
f = 20kHz, 50% Duty Cycle (HIP4086)
0.7
0.9
1.3
-
2.0
mA
f = 20kHz, 50% Duty Cycle (HIP4086A)
0.8
0.9
1
-
1.2
mA
7
24
45
-
50
µA
VxHS = 80V, VxHB = 93V
xHB, xHS Leakage Current
40
80
Charge Pump, HIP4086 only, (Note 8)
QPUMP Output Voltage
No Load
11.5
12.5
14
10.5
14.5
V
QPUMP Output Current
VxHS = 12V, VxHB = 22V
50
100
130
-
140
µA
RUV open
6.2
7.1
8.0
6.1
8.1
V
VDD Falling Undervoltage Threshold
RUV open
5.75
6.6
7.5
5.6
7.6
V
Minimum Undervoltage Threshold
RUV = VDD
5
6.2
6.8
4.9
6.9
V
UNDERVOLTAGE PROTECTION
VDD Rising Undervoltage Threshold
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FN4220.10
March 27, 2015
HIP4086, HIP4086A
DC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, RDEL = 20k, RUV = , Gate Capacitance (CGATE) = 1000pF, unless
otherwise specified. Boldface limits apply across the operating junction temperature range, -40°C to +150°C. (Continued)
TJ = +25°C
TJ = -40°C TO +150°C
MIN
(Note 9)
TYP
MAX
(Note 9)
MIN
(Note 9)
MAX
(Note 9)
UNITS
Low Level Input Voltage
-
-
1.0
-
0.8
V
High Level Input Voltage
2.5
-
-
2.7
-
V
Input Voltage Hysteresis
-
35
-
-
-
mV
PARAMETER
TEST CONDITIONS
INPUT PINS: ALI, BLI, CLI, AHI, BHI, CHI, AND DIS
Low Level Input Current
VIN = 0V
-60
-100
-135
-55
-140
µA
High Level Input Current
VIN = 5V
-1
-
+1
-10
+10
µA
-
100
-
-
200
mV
0.3
0.5
0.7
-
1.0
A
GATE DRIVER OUTPUT PINS: ALO, BLO, CLO, AHO, BHO, AND CHO
Low Level Output Voltage (VOUT - VSS) ISINKING = 30mA
VOUT = 0V
Peak Turn-On Current
NOTES:
8. the specified charge pump current is the total amount available to drive external loads across xHO and xHS.
9. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
AC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, CGATE = 1000pF, RDEL = 10k, unless otherwise specified.
Boldface limits apply over the operating junction temperature range, -40°C to +150°C.
TJ = +25°C
TJ = -40°C TO +150°C
MIN
(Note 9)
TYP
MAX
(Note 9)
MIN
(Note 9)
MAX
(Note 9)
UNITS
RDEL = 100kΩ
3.8
4.5
6
3
7
µs
RDEL = 10kΩ
0.38
0.5
0.65
0.3
0.7
µs
Dead Time Channel Matching
RDEL = 10kΩ
-
7
15
-
20
%
Lower Turn-off Propagation Delay
(xLI to xLO turn-off) (Figures 3 or 4)
No Load
-
30
45
-
65
Upper Turn-off Propagation Delay
(xHI to xHO turn-off) (Figures 3 or 4)
No Load
-
75
90
-
100
Lower Turn-on Propagation Delay
(xLI to xLO turn-on) (Figures 3 or 4)
No Load
-
45
75
-
90
Upper Turn-on Propagation Delay
(xHI to xHO turn-on) (Figures 3 or 4)
No Load
-
65
90
-
100
Rise Time
CGATE = 1000pF
-
20
40
-
50
ns
Fall Time
CGATE = 1000pF
-
10
20
-
25
ns
Disable Turn-off Propagation Delay
(DIS to xLO turn-off) (Figure 5)
-
55
80
-
90
Disable Turn-off Propagation Delay
(DIS to xHO turn-off) (Figure 5)
-
80
90
-
100
Disable to Lower Turn-on Propagation Delay
(DIS to xLO turn-on) (Figure 5)
-
55
80
-
100
-
2.0
-
-
-
PARAMETER
TEST CONDITIONS
TURN-ON DELAY AND PROPAGATION DELAY
Dead Time (Figure 3)
Disable to Upper Enable
(DIS to xHO turn-on) (Figure 5)
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RDEL = 10kΩ, CRFSH
Open
6
ns
ns
ns
ns
ns
ns
ns
µs
FN4220.10
March 27, 2015
HIP4086, HIP4086A
Test Waveforms and Timing Diagrams
xLI to xLO
turn-off
xLI to xLO
turn-on
+ delay
xLI to xLO
turn-off
xLI to xHO
turn-off
xLI
xHI
xLO
xHO
xHI to xHO
turn-on
+ delay
Dead
time
xHI to xHO
turn-off
Dead
time
FIGURE 3. PROPAGATION DELAYS WITH PROGRAMMED TURN-ON DELAYS (RDEL CONNECTED TO VDD WITH A RESISTOR)
xLI to xLO
turn-off
xLI to xLO
turn-on
xLI to xLO
turn-off
xLI to xLO
turn-on
xLI
xHI
xLO and xHO are on
simulateously
xLO
xHO
xHI to xHO
turn-on
xHI to xHO
turn-off
xHI to xHO
turn-on
FIGURE 4. PROPAGATION DELAYS WITH NO PROGRAMMED TURN-ON DELAYS (RDEL CONNECTED TO VSS)
DIS to xLO
turn-on
delay
DIS
or
UV
DIS to xHO
turn-off
delay
refresh pulse
DIS to xLO
turn-on
delay
refresh pulse
xHI,
xLI
xLO
xHO
xHO turn-on delay
FIGURE 5. DISABLE FUNCTION
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FN4220.10
March 27, 2015
HIP4086, HIP4086A
Typical Performance Curves
6
30
4
VDD SUPPLY CURRENT (mA)
VDD SUPPLY CURRENT (mA)
5
VDD = 15V
VDD = 12V
VDD = 10V
3
CGATE = 1000pF
ALL GATE CONTROL INPUTS = 5V
VDD = 16V
VDD = 8V
200kHz
25
100kHz
20
50kHz
20kHz
10kHz
15
VDD = 7V
2
-60
-40
-20
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
140
10
-60
160
FIGURE 6. VDD SUPPLY CURRENT vs VDD SUPPLY VOLTAGE
120
140
160
VDD = 15V
1.6
3000
BIAS CURRENT (mA)
FLOATING BIAS CURRENT (µA)
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
1.8
TJ = +25°C
CGATE = 1000pF
2000
1000
CGATE = NO LOAD
0
20
40
60
80
100 120 140 160
SWITCHING FREQUENCY (kHz)
1.4
1.2
VDD = 12V
0.8
180
0.6
-60
200
-40
-20
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
140
160
140
160
FIGURE 9. OFF-STATE IXHB BIAS CURRENT
14
CHARGE PUMP OUTPUT VOLTAGE (V)
200
VxHB - VxHS = 10V
150
100
50
0
-60
VDD = 10V
VDD = 8V
VDD = 7V
1.0
FIGURE 8. FLOATING IXHB BIAS CURRENT
OUTPUT CURRENT (µA)
-20
FIGURE 7. VDD SUPPLY CURRENT vs SWITCHING FREQUENCY
4000
0
-40
-40
-20
0
20
40
60
80
100 120 140 160
JUNCTION TEMPERATURE (°C)
FIGURE 10. CHARGE PUMP OUTPUT CURRENT (HIP4086 only)
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8
VDD = 15V
13
12
VDD = 12V
VDD = 10V
11
10
VDD = 8V
9
8
VDD = 7V
7
6
-60
-40
-20
0
20
40
60
80
100
120
JUNCTION TEMPERATURE (°C)
FIGURE 11. CHARGE PUMP OUTPUT VOLTAGE(HIP4086 only)
FN4220.10
March 27, 2015
HIP4086, HIP4086A
Typical Performance Curves (Continued)
2
CGATE = 1000pF
AVERAGE TURN-OFF CURRENT (A)
AVERAGE TURN-ON CURRENT (A)
1
0.8
VDD = 15V
0.6
VDD = 12V
VDD = 10V
0.4 V
DD = 8V
VDD = 7V
0.2
0
-60
-40
-20
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
140
1.6
VDD = 12V
1.2 VDD = 10V
VDD = 8V
0.8
VDD = 7V
0.4
0
-60
160
CGATE = 1000pF
VDD = 15V
FIGURE 12. AVERAGE TURN-ON CURRENT (0 TO 5V)
-40
-20
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
140
160
FIGURE 13. AVERAGE TURN-OFF CURRENT (VDD TO 4V)
100
40
PROPAGATION DELAY (ns)
RISE AND FALL TIMES (ns)
VDD = XHB-XHS = 12V, CGATE = 1000pF
30
RISE
20
FALL
10
0
-60
-40
-20
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
140
80
xHI to xHO
60
40
xLI to xLO
20
-60
160
-40
0
20
40
60
80
100
120
140
160
450
500
JUNCTION TEMPERATURE (°C)
FIGURE 14. RISE AND FALL TIMES (10 to 90%)
FIGURE 15. PROPAGATION DELAY
80
100
TJ = +25°C
REFRESH TIME (µs)
UPPER DISABLE TURN-OFF
PROPAGATION DELAY (ns)
-20
LOWER DISABLE TURN-OFF
LOWER ENABLE TURN-ON
10
-60
-40
-20
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
FIGURE 16. DISABLE PIN PROPAGATION DELAY
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140
160
60
40
20
0
0
50
100
150
200 250 300
CRFSH (pF)
350
400
FIGURE 17. REFRESH TIME
FN4220.10
March 27, 2015
HIP4086, HIP4086A
Typical Performance Curves (Continued)
11.0
6
10.5
UNDERVOLTAGE SHUTDOWN/
ENABLE VOLTAGE
RDEL = 100kΩ
DEAD TIME (µs)
10.0
4
2
RDEL = 10kΩ
0
-60
-40
-20
ENABLE (50kΩ, UVLO TO GND)
9.5
9.0
8.5
8.0
7.5
TRIP (50k, UVLO TO GND)
TRIP/ENABLE (0kΩ, UVLO TO VDD)
7.0
ENABLE (UVLO OPEN)
TRIP (UVLO OPEN)
6.5
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
140
160
FIGURE 18. DEAD TIME
6.0
-60
-40
-20
0
20
40
60
80 100 120
JUNCTION TEMPERATURE (°C)
140 160
FIGURE 19. UNDERVOLTAGE THRESHOLD
LEAKAGE CURRENT (µA)
25
VxHS = 80V
20
15
10
-60
-40
-20
0
20
40
60
80 100
JUNCTION TEMPERATURE (°C)
120
140
160
FIGURE 20. IxHS LEAKAGE CURRENT
Functional Description
Input Logic
NOTE: When appropriate for brevity, input and output pins will be prefixed
with an “x” as a substitute for A, B, or C. For example, xHS refers to pins
AHS, BHS, and CHS.
The HIP4086/A is a three phase bridge driver designed
specifically for motor drive applications. Three identical half
bridge sections, A, B, and C, can be controlled individually by
their input pins, ALI, AHI, BLI, BHI, and CLI, CHI (xLI, xHI) or the 2
corresponding input pins for each section can be tied together to
form a PWM input (xLI connected to xHI = xPWM). When
controlling individual inputs, the programmable dead time is
optional but shoot-thru protection must then be incorporated in
the timing of the input signals. If the PWM mode is chosen, then
the internal programmable dead time must be used.
Shoot-Thru Protection
Dead time, to prevent shoot-thru, is implemented by delaying the
turn-on of the high-side and low-side drivers. The delay timers are
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enabled if the voltage on the RDEL pin is greater than 100mV.
The voltage on RDEL will be greater than 100mV for any value of
programming resistor in the specified range. If the voltage on
RDEL is less than 100mV, the delay timers are disabled and no
shoot-thru protection is provided by the internal logic of the
HIP4086/A. When the dead time is to be disabled, RDEL should
be shorted to VSS.
Refresh Pulse
To insure that the boot capacitors are charged prior to turning on
the high-side drivers, a refresh pulse is triggered when DIS is low
or when the UV comparator transitions low (VDD is greater than
the programmed undervoltage threshold). Please refer to the
“Block Diagram (for clarity, only one phase is shown)” on page 2.
When triggered, the refresh pulse turns on all of the low-side
drivers (xLO = 1) and turns off all of the high-side drivers
(xHO = 0) for a duration set by a resistor tied between RDEL and
VSS. When xLO = 1, the low-side bridge FETs charge the boot
caps from VDD through the boot diodes.
FN4220.10
March 27, 2015
HIP4086, HIP4086A
Charge Pump
The internal charge pump of the HIP4086/A is used to maintain
the bias on the boot cap for 100% duty cycle. There is no limit for
the duration of this period. The user must understand that this
charge pump is only intended to provide the static bias current of
the high-side drivers and the gate leakage current of the
high-side bridge FETs. It cannot provide in a reasonable time, the
majority of the charge on the boot cap that is consumed, when
the xHO drivers source the gate charge to turn on the high-side
bridge FETs. The boot caps should be sized so that they do not
discharge excessively when sourcing the gate charge. See
“Application Information” on page 11 for methods to size the
boot caps.
The charge pump has sufficient capacity to source a worst-case
minimum of 50µA to the external load. The gate leakage current
of most power MOSFETs is about 100nA so there is more than
sufficient current to maintain the charge on the boot caps.
Because the charge pump current is small, a gate-source resistor
on the high-side bridge FETs is not recommended. When
calculating the leakage load on the outputs of xHS, also include
the leakage current of the boot capacitor. This is rarely a problem
but it could be an issue with electrolytic capacitors at high
temperatures.
Application Information
Equation 1 calculates the total charge required for the Period
duration. This equation assumes that all of the parameters are
constant during the Period duration. The error is insignificant if
Ripple is small.
Q C = Q gate80V + Period  (I HB + V HO  R GS + I gate_leak )
C boot = Q C   Ripple VDD 
(EQ. 1)
C boot = 0.52F
If the gate to source resistor is removed (RGS is usually not
needed or recommended), then:
Cboot = 0.33µF
These values of Cboot will sustain the high side driver bias during
Period with only a small amount of Ripple. But in the case of the
HIP4086, the charge pump reduces the value of Cboot even
more. The specified charge pump current is a minimum of 50µA
which is more than sufficient to source Igate_leak. Also, because
the specified charge pump current is in excess of what is needed
for IHB, the total charge required to be sourced by the boot
capacitor is shown by Equation 2.
(EQ. 2)
Q C = Q gate80V or Cboot = 0.13F
Not only is the required boot cap smaller in value, there is no
restriction on the duration of Period.
Selecting the Boot Capacitor Value
The boot capacitor value is chosen not only to supply the internal
bias current of the high-side driver but also, and more
significantly, to provide the gate charge of the driven FET without
causing the boot voltage to sag excessively. In practice, the boot
capacitor should have a total charge that is about 20 times the
gate charge of the driven power FET for approximately a 5% drop
in voltage after charge has been transferred from the boot
capacitor to the gate capacitance.
The following parameters shown in Table 1 are required to
calculate the value of the boot capacitor for a specific amount of
voltage droop when using the HIP4086/A (no charge pump). In
Table 1, the values used are arbitrary. They should be changed to
comply with the actual application.
TABLE 1.
VDD = 10V
VDD can be any value between 7 and 15VDC.
VHB = VDD - 0.6V
= VHO
High-side driver bias voltage (VDD - boot diode
voltage) referenced to VHS.
Period = 1ms
This is the longest expected switching period.
IHB= 100µA
Worst case high-side driver current when
xHO = high (this value is specified for VDD = 12V
but the error is not significant).
RGS = 100kΩ
Gate-source resistor (usually not needed).
Ripple = 5%
Desired ripple voltage on the boot cap (larger
ripple is not recommended).
Igate_leak = 100nA
From the FET vendor’s datasheet.
Qgate80V = 64nC
From Figure 21.
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FIGURE 21. TYPICAL GATE VOLTAGE vs GATE CHARGE
FN4220.10
March 27, 2015
HIP4086, HIP4086A
Typical Application Circuit
VDD
VDD
CHB
RDEL
BHB
AHB
Speed
AHI
ALI
Controller
BHI
HIP4086/A
AHO
BLI
Brake
Battery
24V...48V
BHO
CHO
CHS
BHS
AHS
CHI
CLI
VSS
ALO
BLO
CLO
FIGURE 22. TYPICAL APPLICATION CIRCUIT
Figure 22 is an example of how the HIP4086 and HIP4086A
3-phase drivers can be applied to drive a 3-phase motor.
Depending on the application, the switching speed of the bridge
FETs can be reduced by adding series connected resistors
between the xHO outputs and the FET gates. Gate-Source
resistors are recommended on the low-side FETs to prevent
unexpected turn-on of the bridge should the bridge voltage be
applied before VDD. Gate-to-source resistors on the high-side
FETs are not usually required if low-side gate-to-source resistors
are used. If relatively small gate-to-source resistors are used on
the high-side FETs, be aware that they will load the charge pump
of the HIP4086 negating the ability of the charge pump to keep
the high-side driver biased during very long periods.
An important operating condition that is frequently overlooked by
designers is the negative transient on the xHS pins that occurs
when the high-side bridge FET turns off. The Absolute Maximum
transient allowed on the xHS pin is -6V but it is wise to minimize
the amplitude to lower levels. This transient is the result of the
parasitic inductance of the low-side drain-to-source conductor on
the PCB. Even the parasitic inductance of the low-side FET
contributes to this transient.
xHO
IN D U C T IV E
LO AD
xHS
+
xLO
+
VSS
FIGURE 23. BRIDGE WITH PARASITIC INDUCTANCES
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When the high-side bridge FET turns off, because of the inductive
characteristics of a motor load, the current that was flowing in
the high-side FET (blue) must rapidly commutate to flow through
the low-side FET (red). The amplitude of the negative transient
impressed on the xHS node is (di/dt x L) where L is the total
parasitic inductance of the low-side FET drain-source path and
di/ddt is the rate at which the high-side FET is turned off. With
the increasing power levels of new generation motor drives,
clamping this transient becomes more and more significant for
the proper operation of the HIP4086/A.
There are several ways of reducing the amplitude of this
transient. If the bridge FETs are turned off more slowly to reduce
di/dt, the amplitude will be reduced but at the expense of more
switching losses in the FETs. Careful PCB design will also reduce
the value of the parasitic inductance. However, these two
solutions by themselves may not be sufficient. Figure 23
illustrates a simple method for clamping the negative transient.
Two series connected, fast PN junction, 1A diodes are connected
between xHS and VSS as shown. It is important that the
components be placed as close as possible to the xHS and VSS
pins to minimize the parasitic inductance of this current path.
Two series connected diodes are required because they are in
parallel with the body diode of the low-side FET. If only one diode
is used for the clamp, it will conduct some of the negative load
current that is flowing in the low-side FET. In severe cases, a
small value resistor in series with the xHS pin as shown, will
further reduce the amplitude of the negative transient.
Please note that a similar transient with a positive polarity occurs
when the low-side FET turns off. This is less frequently a problem
because xHS node is floating up toward the bridge bias voltage.
The Absolute Max voltage rating for the xHS node does need to
be observed when the positive transient occurs.
FN4220.10
March 27, 2015
HIP4086, HIP4086A
General PCB Layout Guidelines
The AC performance of the HIP4086/A depends significantly on
the design of the PC board. The following layout design
guidelines are recommended to achieve optimum performance:
• Place the driver as close as possible to the driven power FETs.
• Understand where the switching power currents flow. The high
amplitude di/dt currents of the driven power FET will induce
significant voltage transients on the associated traces.
• Keep power loops as short as possible by paralleling the
source and return traces.
• Use planes where practical; they are usually more effective
than parallel traces.
• Avoid paralleling high amplitude di/dt traces with low level
signal lines. High di/dt will induce currents and consequently,
noise voltages in the low level signal lines.
• When practical, minimize impedances in low level signal
circuits. The noise, magnetically induced on a 10kΩ resistor, is
10x larger than the noise on a 1kΩ resistor.
• Be aware of magnetic fields emanating from motors,
transformers and inductors. Gaps in these magnetic structures
are especially bad for emitting flux.
• It may be necessary to add resistance to dampen resonating
parasitic circuits especially on xHO and xLO. If an external gate
resistor is unacceptable, then the layout must be improved to
minimize lead inductance.
• Keep high dv/dt nodes away from low level circuits. Guard
banding can be used to shunt away dv/dt injected currents
from sensitive circuits. This is especially true for control circuits
that source the input signals to the HIP4086/A.
• Avoid having a signal ground plane under a high amplitude
dv/dt circuit. This will inject di/dt currents into the signal
ground paths.
• Do power dissipation and voltage drop calculations of the
power traces. Many PCB/CAD programs have built in tools for
calculation of trace resistance.
• Large power components (Power FETs, Electrolytic caps, power
resistors, etc.) will have internal parasitic inductance which
cannot be eliminated. This must be accounted for in the PCB
layout and circuit design.
• If you simulate your circuits, consider including parasitic
components especially parasitic lead inductance.
• If you must have traces close to magnetic devices, align the
traces so that they are parallel to the flux lines to minimize
coupling.
• The use of low inductance components such as chip resistors
and chip capacitors is highly recommended.
• Use decoupling capacitors to reduce the influence of parasitic
inductance in the VDD and GND leads. To be effective, these
caps must also have the shortest possible conduction paths. If
vias are used, connect several paralleled vias to reduce the
inductance of the vias.
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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FN4220.10
March 27, 2015
HIP4086, HIP4086A
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you
have the latest Rev.
DATE
REVISION
CHANGE
March 27, 2015
FN4220.10
Added AN1829, “HIP4086 3-Phase BLDC Motor Drive Demonstration Board, User Guide” bullet to the related
literature section on page 1.
On page 3:
In the Pin Configuration updated typo for Pin 17 Pin Name from “AHC” to “AHO”.
In the Pin Description table:
Updated RDEL and UVLO Description to reference the correct Figures.
RDEL - from “Figure 17” to “Figure 18” and UVLO - from “Figure 18”to “Figure 19”.
Updated typo-AHS pin number from “15” to “18”.
Added “RDEL range10kΩ to 100kΩ” to the “Maximum Recommended Operating Conditions” on page 5.
Updated the About Intersil verbiage.
January 28, 2013
FN4220.9
Corrected following typo in the second paragraph of page 1:
From: (0.5ms to 4.5ms)
To: (0.5µs to 4.5µs)
September 27, 2012
FN4220.8
Removed evaluation board from “Ordering Information” and “Related Literature” since it is inactive.
June 1, 2011
FN4220.7
Added alternate parameters for HIP4086A in DC Electrical Specifications Table Supply Currents on page 5.
Added to Charge Pump Figures 10 and 11 in Typical Performance Curves "HIP4086 Only"
March 18, 2011
-Converted to new Intersil datasheet template.
-Changed Title from "80V, 500mA, 3-Phase Driver" to "80V, 500mA, 3-Phase MOSFET Driver".
-Rewrote description on page 1 by adding HIP4086A and stating the differences between parts.
-Updated “Ordering Information” on page 4 by adding part number HIP4086AABZ and Eval Board. Added MSL
note. Removed obsolete part HIP4086AP.
-Updated “TYPICAL APPLICATION” on page 1.
-Added “CHARGE PUMP OUTPUT CURRENT” on page 1.
-Updated “Features” and “Applications” section on page 1.
-Added “” on page 1.
-Updated “Block Diagram” on page 2 by adding color and notes.
-Updated “Thermal Information” and notes on page 5.
-Added “Boldface limits apply..” to common conditions of Electrical Specifications tables. Added Note 9 to MIN
and MAX columns of Electrical Specifications tables.
-Updated all timing diagrams for better clarification on page 7.
-Added “Functional Description”, “Application Information” and “General PCB Layout Guidelines” sections
beginning on page 10.
-Updated Package Outline Drawing M24.3 by removing table listing dimensions and putting dimensions on
drawing. Added Land Pattern.
-Added “Revision History” and “About Intersil” to page 14.
July 26, 2004
FN4220.6
Added Pb-Free parts to “Ordering Information” on page 4.
February 18, 2003
FN4220.5
Revised “Pin Descriptions” on page 3.
Revised “Low Level Input Current” specs on page 6.
May, 1999
FN4220.4
Initial Release.
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support
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FN4220.10
March 27, 2015
HIP4086, HIP4086A
Dual-In-Line Plastic Packages (PDIP)
N
E24.3 (JEDEC MS-001-AF ISSUE D)
E1
INDEX
AREA
1 2 3
24 LEAD NARROW BODY DUAL-IN-LINE PLASTIC
PACKAGE
N/2
INCHES
-B-AD
E
BASE
PLANE
-C-
SEATING
PLANE
A2
A
L
D1
e
B1
D1
eA
A1
eC
B
0.010 (0.25) M
C
L
C A B S
C
eB
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.210
-
5.33
4
A1
0.015
-
0.39
-
4
A2
0.115
0.195
2.93
4.95
-
B
0.014
0.022
0.356
0.558
-
B1
0.045
0.070
1.15
1.77
8
C
0.008
0.014
0.204
0.355
-
D
1.230
1.280
31.24
32.51
5
D1
0.005
-
0.13
-
5
E
0.300
0.325
7.62
8.25
6
E1
0.240
0.280
6.10
7.11
5
e
0.100 BSC
eA
0.300 BSC
4. Dimensions A, A1 and L are measured with the package seated in
JEDEC seating plane gauge GS-3.
eB
-
L
0.115
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E and eA are measured with the leads constrained to be perpendicular to datum -C- .
N
24
2.54 BSC
-
7.62 BSC
0.430
-
0.150
2.93
24
6
10.92
7
3.81
4
9
Rev. 0 12/93
7. eB and eC are measured at the lead tips with the leads unconstrained.
eC must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
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FN4220.10
March 27, 2015
HIP4086, HIP4086A
Package Outline Drawing
M24.3
24 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE (SOIC)
Rev 2, 3/11
24
INDEX
AREA
7.60 (0.299)
7.40 (0.291) 10.65 (0.419)
10.00 (0.394)
DETAIL "A"
1
2
3
TOP VIEW
1.27 (0.050)
0.40 (0.016)
SEATING PLANE
2.65 (0.104)
2.35 (0.093)
15.60 (0.614)
15.20 (0.598)
0.75 (0.029)
x 45°
0.25 (0.010)
0.30 (0.012)
0.10 (0.004)
1.27 (0.050)
0.51 (0.020)
0.33 (0.013)
8°
0°
0.32 (0.012)
0.23 (0.009)
SIDE VIEW “B”
SIDE VIEW “A”
1.981 (0.078)
9.373 (0.369)
1.27 (0.050)
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982.
2. Package length does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
3. Package width does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm
(0.010 inch) per side.
4. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
5. Terminal numbers are shown for reference only.
6. The lead width as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
7. Controlling dimension: MILLIMETER. Converted inch dimensions in
( ) are not necessarily exact.
8. This outline conforms to JEDEC publication MS-013-AD ISSUE C.
0.533 (0.021)
TYPICAL RECOMMENDED LAND PATTERN
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16
FN4220.10
March 27, 2015
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