Rectifier Diodes MA2J115 Silicon epitaxial planar type Unit : mm For small power current rectification Parameter Symbol Rating Unit Reverse voltage (DC) VR 200 V Peak reverse voltage VRM 200 V Output current IO 200 mA Repetitive peak forward current IFRM 600 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.7 ± 0.1 + 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.25 ± 0.1 0.3 0.5 ± 0.1 1 2 0.16 − 0.06 • Small S-mini type package, allowing high-density mounting • High reverse voltage VR A 0.625 K ■ Features 0.4 ± 0.1 1.7 ± 0.1 0.4 ± 0.1 2.5 ± 0.2 1：Anode 2：Cathode S-Mini Type Package (2-pin) Marking Symbol: 1F Note) * : t = l s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 200 V 200 nA Forward voltage (DC) VF IF = 200 mA 1.2 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 4.5 pF Note) Rated input/output frequency: 3 MHz 1 MA2J115 Rectifier Diodes IF V F IR V R VF Ta 1 000 100 1.6 100°C 25°C 100 100°C − 20°C 10 1 1.2 1.0 IF = 200 mA 0.8 10 mA 0.6 3 mA 0.4 Reverse current IR (nA) 10 Ta = 150°C Forward voltage VF (V) Forward current IF (mA) Ta = 150°C 1.4 0.1 1 0.1 25°C 0.01 0.2 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 0.001 0 160 200 0 40 1 0.1 0.01 80 120 160 200 240 Reverse voltage VR (V) IF(surge) tW Ct VR 10 Reverse current IR (nA) 120 1 000 3 100 V 10 V f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) VR = 200 V 80 Ambient temperature Ta (°C) IR Ta 100 40 2 1 Forward surge current IF(surge) (A) 0.01 Ta = 25°C IF(surge) tW Non repetitive 300 100 30 10 3 1 0.3 This graph shows actual values, not guaranteed values. 0.001 −40 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 0 40 80 120 160 200 Reverse voltage VR (V) 240 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30 60