DATASHEET

ISL6208A
®
Data Sheet
February 15, 2006
High Voltage Synchronous Rectified Buck
MOSFET Driver
The ISL6208A is a high frequency, dual MOSFET driver,
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. It is
especially suited for mobile computing applications that
require high efficiency and excellent thermal performance.
This driver, combined with an Intersil multiphase Buck PWM
controller, forms a complete single-stage core-voltage
regulator solution for advanced mobile microprocessors.
The ISL6208A features 4A typical sinking current for the
lower gate driver. This current is capable of holding the lower
MOSFET gate off during the rising edge of the Phase node.
This prevents shoot-through power loss caused by the high
dv/dt of phase voltages. The operating voltage matches the
30V breakdown voltage of the MOSFETs commonly used in
mobile computer power supplies.
The ISL6208A also features a three-state PWM input that,
working together with Intersil’s multiphase PWM controllers,
will prevent negative voltage output during CPU shutdown.
This feature eliminates a protective Schottky diode usually
seen in a microprocessor power systems.
MOSFET gates can be efficiently switched up to 2MHz using
the ISL6208A. Each driver is capable of driving a 3000pF
load with propagation delays of 15ns and transition times
under 10ns. Bootstrapping is implemented with an internal
Schottky diode. This reduces system cost and complexity,
while allowing the use of higher performance MOSFETs.
Adaptive shoot-through protection is integrated to prevent
both MOSFETs from conducting simultaneously.
A diode emulation feature is integrated in the ISL6208A to
enhance converter efficiency at light load conditions. This
feature also allows for monotonic start-up into pre-biased
outputs. When diode emulation is enabled, the driver will
allow discontinuous conduction mode by detecting when the
inductor current reaches zero and subsequently turning off
the low side MOSFET gate. Programmable dead-time
control with gate threshold monitoring is also integrated to
prevent both MOSFETs from conducting simultaneously.
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for MLFP Packages”
FN9272.0
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Adaptive Shoot-Through Protection
- Active Gate Threshold Monitoring
- Programmable Dead-Time
• 0.5Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency up to 2MHz
- Fast Output Rise and Fall Time
- Low Propagation Delay
•
•
•
•
•
•
Three-State PWM Input for Power Stage Shutdown
Internal Bootstrap Schottky Diode
Low Bias Supply Current (5V, 100µA)
Diode Emulation for Efficiency and Pre-Biased Startup
VCC POR (Power-On-Reset) Feature Integrated
Pin-to-pin Compatible with ISL6207, ISL6208, ISL6209
• QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Supplies for Intel® and AMD® Mobile Microprocessors
• High Frequency, Low Profile DC/DC Converters
• High Current Low Output Voltage DC/DC Converters
• High Input Voltage DC/DC Converters
Ordering Information
PART NUMBER
ISL6208ACBZ
(Note)
PART
MARKING
TEMP.
RANGE
(°C)
PACKAGE
ISL6208ACBZ -10 to 100 8 Ld SOIC
(Pb-Free)
PKG.
DWG.
#
M8.15
ISL6208ACBZ-T ISL6208ACBZ 8 Ld SOIC Tape and Reel
(Note)
(Pb-Free)
ISL6208ACRZ
(Note)
08AZ
ISL6208ACRZ-T 08AZ
(Note)
-10 to 100 8 Ld 3x3 QFN L8.3x3
(Pb-Free)
8 Ld 3x3 QFN Tape and Reel
(Pb-Free)
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
• Technical Brief TB447 “Guidelines for Preventing Boot-toPhase Stress on Half-Bridge MOSFET Driver ICs”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL6208A
Pinouts
1
8
PHASE
BOOT
2
7
FCCM
PWM
3
6
VCC
GND
4
5
LGATE
PHASE
UGATE
UGATE
ISL6208ACR
(8 LD 3x3 QFN)
TOP VIEW
ISL6208ACB
(8 LD SOIC)
TOP VIEW
8
7
66 FCCM
BOOT 1
PWM 2
3
4
GND
LGATE
5 VCC
Block Diagram
VCC
BOOT
FCCM
UGATE
PHASE
SHOOTTHROUGH
PROTECTION
CONTROL
LOGIC
PWM
VCC
LGATE
10K
GND
THERMAL PAD (FOR QFN PACKAGE ONLY)
FIGURE 1. BLOCK DIAGRAM
Timing Diagram
2.5V
PWM
tPDHU
tPDLU
tRU
tTSSHD
tRU
tFU
tFU
tPTS
1V
UGATE
LGATE
tPTS
1V
tRL
tFL
tTSSHD
tPDHL
tPDLL
tFL
2
FN9272.0
February 15, 2006
ISL6208A
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (VFCCM, VPWM). . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . -0.3V to 33V
BOOT To PHASE Voltage (VBOOT-PHASE) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage (Note 1) . . . . . . . . . . . . . . . . . . . GND - 0.3V to 30V
GND -8V (<20ns Pulse Width, 10µJ)
UGATE Voltage . . . . . . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT
VPHASE - 5V (<20ns Pulse Width, 10µJ) to VBOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5µJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . .-40°C to 125°C
Thermal Resistance (Typical Notes 2, 3, 4) θJA (°C/W) θJC (°C/W)
SOIC Package (Note 2) . . . . . . . . . . . .
110
n/a
QFN Package (Notes 3, 4). . . . . . . . . .
80
15
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . .-10°C to 100°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The Phase Voltage is capable of withstanding -7V DC when the BOOT pin is at GND.
2. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
4. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
PWM pin floating, VFCCM = 5V
-
100
-
µA
Vcc Rising
-
3.30
3.90
V
Vcc Falling
2.40
2.90
-
V
-
400
-
mV
0.45
0.60
0.65
V
VPWM = 5V, VFCCM = 5V
-
250
-
µA
VPWM = 0V, VFCCM = 5V
-
-250
-
µA
VCC SUPPLY CURRENT
Bias Supply Current
IVCC
POR
POR Hysteresis
BOOTSTRAP DIODE
Forward Voltage
VF
VVCC = 5V, forward bias current = 2mA
PWM INPUT
Input Current
IPWM
PWM Three-State Rising Threshold
VVCC = 5V
0.70
1.00
1.30
V
PWM Three-State Falling Threshold
VVCC = 5V
3.5
3.8
4.1
V
-
70
-
ns
-
20
-
ns
-
2.5
-
V
RSET = 0Ω
-
70
-
ns
Three-State Shutdown Holdoff Time
UG/LG Three-state Propagation Delay
tTSSHD
VVCC = 5V, temperature = 25°C
tPTS
FCCM INPUT
FCCM Threshold
FCCM Transient Delay
SWITCHING TIME
UGATE Rise Time (Note 5)
tRU
VVCC = 5V, 3nF Load
-
8.0
-
ns
LGATE Rise Time (Note 5)
tRL
VVCC = 5V, 3nF Load
-
8.0
-
ns
UGATE Fall Time (Note 5)
tFU
VVCC = 5V, 3nF Load
-
8.0
-
ns
3
FN9272.0
February 15, 2006
ISL6208A
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted (Continued)
PARAMETER
SYMBOL
LGATE Fall Time (Note 5)
tFL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VVCC = 5V, 3nF Load
-
4.0
-
ns
UGATE Turn-Off Propagation Delay
tPDLU
VVCC = 5V, Outputs Unloaded
-
20
-
ns
LGATE Turn-Off Propagation Delay
tPDLL
VVCC = 5V, Outputs Unloaded
-
27
-
ns
UGATE Turn-On Propagation Delay
tPDHU
VVCC = 5V, Outputs Unloaded; RSET = 0Ω
-
26
-
ns
LGATE Turn-On Propagation Delay
tPDHL
VVCC = 5V, Outputs Unloaded; RSET = 0Ω
-
26
-
ns
UGATE Turn-On Propagation Delay
tPDHU
VVCC = 5V, Outputs Unloaded; RSET = 80kΩ
-
41
-
ns
LGATE Turn-On Propagation Delay
tPDHL
VVCC = 5V, Outputs Unloaded; RSET = 80kΩ
-
33
-
ns
Minimum LG On TIME in DCM (Note 5)
tLGMIN
-
400
-
ns
OUTPUT
Upper Drive Source Resistance (Note 5)
RU
500mA Source Current
-
1
2.5
Ω
Upper Driver Source Current (Note 5)
IU
VUGATE-PHASE = 2.5V
-
2.00
-
A
Upper Drive Sink Resistance (Note 5)
RU
500mA Sink Current
-
1
2.5
Ω
Upper Driver Sink Current (Note 5)
IU
VUGATE-PHASE = 2.5V
-
2.00
-
A
Lower Drive Source Resistance (Note 5)
RL
500mA Source Current
-
1
2.5
Ω
Lower Driver Source Current (Note 5)
IL
VLGATE = 2.5V
-
2.00
-
A
Lower Drive Sink Resistance (Note 5)
RL
500mA Sink Current
-
0.4
1.0
Ω
Lower Driver Sink Current (Note 5)
IL
VLGATE = 2.5V
-
4.00
-
A
NOTE:
5. Guaranteed by Characterization. Not 100% Tested in Production.
Typical Application with 2-Phase Converter
+5V
VBAT
+5V
+5V
VCC
FB
VSEN
PWM1
PWM
PWM2
PGOOD
UGATE
FCCM
VCC
PHASE
DRIVE
ISL6208A
THERMAL
PAD
FCCM
+VCORE
BOOT
COMP
LGATE
MAIN
CONTROL
ISEN1
VID
+5V
VCC
ISEN2
BOOT
FCCM
FS
DACOUT
GND
PWM
VBAT
UGATE
DRIVE
ISL6208A
PHASE
THERMAL LGATE
PAD
4
FN9272.0
February 15, 2006
ISL6208A
Functional Pin Description
UGATE (Pin 1 for SOIC-8, Pin 8 for QFN)
The UGATE pin is the upper gate drive output. Connect to
the gate of high-side power N-Channel MOSFET.
BOOT (Pin 2 for SOIC-8, Pin 1 for QFN)
BOOT is the floating bootstrap supply pin for the upper gate
drive. Connect the bootstrap capacitor between this pin and
the PHASE pin. The bootstrap capacitor provides the charge
to turn on the upper MOSFET. See the Bootstrap Diode and
Capacitor section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.
PWM (Pin 3 for SOIC-8, Pin 2 for QFN)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation (see
the three-state PWM Input section under DESCRIPTION for
further details). Connect this pin to the PWM output of the
controller.
GND (Pin 4 for SOIC-8, Pin 3 for QFN)
GND is the ground pin for the IC.
LGATE (Pin 5 for SOIC-8, Pin 4 for QFN)
LGATE is the lower gate drive output. Connect to gate of the
low-side power N-Channel MOSFET.
VCC (Pin 6 for SOIC-8, Pin 5 for QFN)
Connect the VCC pin to a +5V bias supply. Place a high
quality bypass capacitor from this pin to GND.
FCCM (Pin 7 for SOIC-8, Pin 6 for QFN)
The FCCM pin enables or disables Diode Emulation. When
FCCM is LOW, diode emulation is allowed. Otherwise,
continuous conduction mode is forced. See the Diode
Emulation section under DESCRIPTION for more detail.
This pin can also be used to program additional switching
dead-time by placing a resistor in series with the input. See
the Programmable Dead-Time section for more detail.
5
PHASE (Pin 8 for SOIC-8, Pin 7 for QFN)
Connect the PHASE pin to the source of the upper MOSFET
and the drain of the lower MOSFET. This pin provides a
return path for the upper gate driver.
Description
Theory of Operation
Designed for speed, the ISL6208A dual MOSFET driver
controls both high-side and low-side N-Channel FETs from
one externally provided PWM signal.
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see Timing Diagram). After a short propagation
delay [tPDLL], the lower gate begins to fall. Typical fall times
[tFL] are provided in the Electrical Specifications section.
Adaptive shoot-through circuitry monitors the LGATE
voltage. When LGATE has fallen below 1V, UGATE is
allowed to turn ON. This prevents both the lower and upper
MOSFETs from conducting simultaneously, or shootthrough.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [tPDLU] is encountered before the upper
gate begins to fall [tFU]. The upper MOSFET gate-to-source
voltage is monitored, and the lower gate is allowed to rise
after the upper MOSFET gate-to-source voltage drops below
1V. The lower gate then rises [tRL], turning on the lower
MOSFET.
This driver is optimized for converters with large step down
compared to the upper MOSFET because the lower
MOSFET conducts for a much longer time in a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement.
The 0.5Ω on-resistance and 4A sink current capability
enable the lower gate driver to absorb the current injected to
the lower gate through the drain-to-gate capacitor of the
lower MOSFET and prevent a shoot through caused by the
high dv/dt of the phase node.
FN9272.0
February 15, 2006
ISL6208A
Typical Performance Waveforms
FIGURE 2. LOAD TRANSIENT (0 - 30A, 3-PHASE)
FIGURE 3. LOAD TRANSIENT (30 - 0A, 3-PHASE)
FIGURE 4. DCM TO CCM TRANSITION AT NO LOAD
FIGURE 5. CCM TO DCM TRANSITION AT NO LOAD
FIGURE 6. PRE-BIASED STARTUP IN CCM MODE
FIGURE 7. PRE-BIASED STARTUP IN DCM MODE
6
FN9272.0
February 15, 2006
ISL6208A
Diode Emulation
FCCM = VCC or GND
Diode emulation allows for higher converter efficiency under
light-load situations. With diode emulation active, the
ISL6208A will detect the zero current crossing of the output
inductor and turn off LGATE. This ensures that
discontinuous conduction mode (DCM) is achieved. Diode
emulation is asynchronous to the PWM signal. Therefore,
the ISL6208A will respond to the FCCM input immediately
after it changes state. Refer to the waveforms on page 6.
NOTE: Intersil does not recommend DCM mode use with rDS(ON)
current sensing topologies. The turn-OFF of the low side MOSFET
can cause gross current measurement inaccuracies.
GATE B
GATE A
Adaptive Shoot-Through Protection
1V
Three-State PWM Input
A unique feature of the ISL6208A and other Intersil drivers is
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time, the output drivers are disabled and
both MOSFET gates are pulled and held low. The shutdown
state is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
FCCM = RESISTOR to VCC or GND
GATE B
GATE A
Adaptive Protection with Delay
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to turn on.
tdelay = 5n - 50ns
1V
FIGURE 8. PROGRAMMABLE DEAD-TIME
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate-to-source voltage during
UGATE turn-off. Once the upper MOSFET gate-to-source
voltage has dropped below a threshold of 1V, the LGATE is
allowed to rise.
45
40
DEAD-TIME (ns)
In addition to gate threshold monitoring, a programmable
delay between MOSFET switching can be accomplished by
placing a resistor in series with the FCCM input. This delay
allows for maximum design flexibility over MOSFET
selection. The delay can be programmed from 5ns to 50ns
above the adaptive shoot-through protection and is obtained
from the absolute value of the current flowing into the FCCM
pin. If no resistor is used, the minimum 5ns delay is used.
Gate threshold monitoring is not affected by the addition or
removal of the additional dead-time. Refer to Figure 8 and
Figure 9 for more detail.
50
35
30
tDELAY
25
20
15
10
5
0
0
167
333
500
667
833
1000
RDELAY (kΩ)
FIGURE 9. ISL6208A PROGRAMMABLE DEAD-TIME vs
DELAY RESISTOR
The equation governing the dead-time seen in Figure 9 is
expressed as:
T DELAY ( ns ) = [ 0.045 × R DELAY ( kΩ ) ] + 5ns
7
FN9272.0
February 15, 2006
ISL6208A
The equation can be rewritten to solve for RDELAY as
follows:
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as:
( T DELAY ( ns ) – 5ns )
R DELAY ( kΩ ) = -----------------------------------------------------0.045
P = f sw ( 1.5V U Q + V L Q ) + I VCC V
U
L
CC
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage rating
above the maximum battery voltage plus 5V. The bootstrap
capacitor can be chosen from the following equation:
Q GATE
C BOOT ≥ -----------------------∆V BOOT
(EQ. 2)
where fsw is the switching frequency of the PWM signal. VU
and VL represent the upper and lower gate rail voltage. QU
and QL is the upper and lower gate charge determined by
MOSFET selection and any external capacitance added to
the gate pins. The lVCC VCC product is the quiescent power
of the driver and is typically negligible.
1000
QU =100nC
QL =200nC
900
QU =50nC
QL =100nC
QU =50nC
QL=50nC
800
(EQ. 1)
where QGATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The ∆VBOOT term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate
charge, QGATE , of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125µF is required.
The next larger standard value capacitance is 0.15µF. A
good quality ceramic capacitor is recommended.
2.0
POWER (mW)
700
QU =20nC
QL=50nC
600
500
400
300
200
100
0
0
200
400
600
800 1000 1200 1400 1600 1800 2000
FREQUENCY (kHz)
FIGURE 11. POWER DISSIPATION vs FREQUENCY
1.8
CBOOT_CAP (µF)
1.6
1.4
1.2
1.0
0.8
QGATE = 100nC
0.6
nC
50
0.4
0.2
20nC
0.0
0.0
0.1
0.2
0.3
0.4 0.5 0.6 0.7
∆VBOOT_CAP (V)
0.8
0.9
1.0
FIGURE 10. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
be performed to ensure safe operation at the desired
8
FN9272.0
February 15, 2006
ISL6208A
Quad Flat No-Lead Plastic Package (QFN)
L8.3x3
8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VEEC ISSUE C)
MILLIMETERS
SYMBOL
MIN
NOMINAL
MAX
NOTES
A
0.80
0.90
1.00
-
A1
-
-
0.05
-
A2
-
-
1.00
A3
b
0.23
D
0.28
9
0.38
5, 8
3.00 BSC
D1
D2
9
0.20 REF
-
2.75 BSC
0.25
1.10
9
1.25
7, 8
E
3.00 BSC
-
E1
2.75 BSC
9
E2
0.25
e
1.10
1.25
7, 8
0.65 BSC
k
0.25
L
0.35
L1
-
-
-
0.60
0.75
8
-
0.15
10
N
8
2
Nd
2
3
Ne
2
3
P
-
-
0.60
9
θ
-
-
12
9
Rev. 1 10/02
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
9
FN9272.0
February 15, 2006
ISL6208A
Small Outline Plastic Packages (SOIC)
M8.15 (JEDEC MS-012-AA ISSUE C)
N
INDEX
AREA
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
H
0.25(0.010) M
B M
INCHES
E
SYMBOL
-B1
2
3
L
SEATING PLANE
-A-
A
D
h x 45°
-C-
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.1890
0.1968
4.80
5.00
3
E
0.1497
0.1574
3.80
4.00
4
e
α
B S
0.050 BSC
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
α
NOTES:
MILLIMETERS
8
0°
8
8°
0°
7
8°
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
Rev. 1 6/05
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
10
FN9272.0
February 15, 2006
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