isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY73 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=50-150@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCER Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT n c . i m e 100 V s c s i . w 70 60 w w 7 V V V IC Collector Current-Continuous 15 IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 MAX UNIT 1.5 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDY73 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 60 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 100Ω 70 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V 90 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 30V; IB=0 0.7 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current 5.0 mA hFE DC Current Gain Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 60V, t= 1.0s, Nonrepetitive 1.95 A Current Gain-Bandwidth Product IC= 1A; VCE= 4V 0.8 MHz fT CONDITIONS B n c . i m e s c is B . w w w MIN VEB= 7.0V; IC=0 IC= 4A; VCE= 4V isc Website：www.iscsemi.cn 2 50 MAX UNIT 150