ISC BDY73

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BDY73
DESCRIPTION
·Excellent Safe Operating Area
·DC Current [email protected] = 4A
·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCER
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
n
c
.
i
m
e
100
V
s
c
s
i
.
w
70
60
w
w
7
V
V
V
IC
Collector Current-Continuous
15
IB
Base Current
7
A
PC
Collector Power [email protected]=25℃
117
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
B
A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
1
MAX
UNIT
1.5
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BDY73
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA; IB= 0
60
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA; RBE= 100Ω
70
V
VCEX(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; VBE= -1.5V
90
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.1
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 4V
1.8
V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
0.7
mA
ICEX
Collector Cutoff Current
VCE= 100V; VBE(off)= 1.5V
VCE= 100V; VBE(off)= 1.5V,TC=150℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
5.0
mA
hFE
DC Current Gain
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 60V, t= 1.0s, Nonrepetitive
1.95
A
Current Gain-Bandwidth Product
IC= 1A; VCE= 4V
0.8
MHz
fT
CONDITIONS
B
n
c
.
i
m
e
s
c
is
B
.
w
w
w
MIN
VEB= 7.0V; IC=0
IC= 4A; VCE= 4V
isc Website:www.iscsemi.cn
2
50
MAX
UNIT
150