Si4590DY www.vishay.com Vishay Siliconix N- and P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) () MAX. 0.057 at VGS = 10 V 100 -100 ID (A) a Qg (TYP.) 5.6 0.072 at VGS = 4.5 V 5 0.183 at VGS = -10 V -3.4 0.205 at VGS = -4.5 V -3.2 4 11.6 D1 8 D2 6 • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS SO-8 Dual D1 7 • TrenchFET® Power MOSFET D2 5 • H bridge / DC-AC inverter - Brushless DC motors D1 Top View 1 S1 2 G1 4 3 G2 S2 S2 G2 G1 N-Channel MOSFET P-Channel MOSFET Ordering Information: Si4590DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage VDS 100 -100 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) 5.6 -3.4 TF = 70 °C 4.5 -2.7 4.5 b,c -2.5 b,c ID TA = 70 °C Pulsed Drain Current (100 μs Pulse Width) Source-Drain Current Diode Current 3.6 IDM TF = 25 °C TA = 25 °C IS b,c -2 b,c 30 -20 3 -3.5 2 b,c -1.9 b,c Pulsed Source-Drain Current (100 μs Pulse Width) ISM 30 -20 Single Pulse Avalanche Current IAS 5 -20 EAS 1.3 20 Single Pulse Avalanche Energy Maximum Power Dissipation V ± 20 TF = 25 °C TA = 25 °C L = 0.1 mH A mJ TF = 25 °C 3.6 4.2 TF = 70 °C 2.3 2.7 2.3 b,c 2.3 b,c 1.5 b,c 1.5 b,c TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg UNIT W -55 to 150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL TYP. MAX. TYP. MAX. Maximum Junction-to-Ambient b,d t 10 s RthJA 35 55 33 55 Maximum Junction-to-Foot (Drain) Steady State RthJF 20 35 17 30 UNIT °C/W Notes a. Based on TF = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W (n-channel) and 90 °C/W (p-channel). S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 μA N-Ch 100 - - VGS = 0 V, ID = -250 μA P-Ch -100 - - ID = 250 μA N-Ch - 70 - ID = -250 μA P-Ch - -103 - ID = 250 μA N-Ch - -5.7 - ID = -250 μA P-Ch - 4.5 - VDS = VGS, ID = 250 μA N-Ch 1.5 - 2.5 VDS = VGS, ID = -250 μA P-Ch -1.5 - -2.5 N-Ch - - 100 P-Ch - - -100 N-Ch - - 1 VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b IDSS ID(on) RDS(on) gfs VDS = -100 V, VGS = 0 V P-Ch - - -1 VDS = 100 V, VGS = 0 V, TJ = 55 °C N-Ch - - 10 VDS = -100 V, VGS = 0 V, TJ = 55 °C P-Ch - - -10 VDS = 5 V, VGS = 10 V N-Ch 10 - - VDS = -5 V, VGS = -10 V P-Ch -10 - - VGS = 10 V, ID = 2 A N-Ch - 0.047 0.057 VGS = -10 V, ID = -2 A P-Ch - 0.150 0.183 VGS = 4.5 V, ID = 1.5 A N-Ch - 0.059 0.072 VGS = -4.5 V, ID = -1 A P-Ch - 0.165 0.205 VDS = 15 V, ID = 2 A N-Ch - 9 - VDS = -15 V, ID = -2 A P-Ch - 9.3 - N-Ch - 360 - V mV/°C V nA μA A S Dynamic a Input Capacitance Ciss N-Channel VDS = 50 V, VGS = 0 V, f = 1 MHz Output Capacitance Coss P-Channel VDS = -50 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss VDS = 50 V, VGS = 10 V, ID = 4.5 A Total Gate Charge Qg VDS = -50 V, VGS = -10 V, ID = -5 A N-Channel VDS = 50 V, VGS = 4.5 V, ID = 4.5 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg S14-0146-Rev. A, 27-Jan-14 P-Channel VDS = -50 V, VGS = -4.5 V, ID = -5 A f = 1 MHz P-Ch - 1150 - N-Ch - 130 - P-Ch - 65 - N-Ch - 20 - P-Ch - 40 - N-Ch - 7.5 11.5 P-Ch - 24 36 N-Ch - 4 6 P-Ch - 11.6 18 N-Ch - 1.2 - P-Ch - 3.8 - N-Ch - 2 - P-Ch - 5 - N-Ch 0.6 3.3 6.6 P-Ch 3 13 26 pF nC Document Number: 62937 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. N-Ch - 5 10 P-Ch - 7 15 N-Ch - 11 20 20 UNIT Dynamic a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) N-Channel VDD = 50 V, RL = 13.8 ID 3.6 A, VGEN = 10 V, Rg = 1 tr P-Channel VDD = -50 V, RL = 12.5 ID -4 A, VGEN = -10 V, Rg = 1 td(off) tf td(on) N-Channel VDD = 50 V, RL = 13.8 ID 3.6 A, VGEN = 4.5 V, Rg = 1 tr P-Channel VDD = -50 V, RL = 12.5 ID -4 A, VGEN = -4.5 V, Rg = 1 td(off) tf P-Ch - 11 N-Ch - 12 25 P-Ch - 65 130 N-Ch - 6 15 P-Ch - 20 40 N-Ch - 32 65 P-Ch - 55 110 N-Ch - 73 150 P-Ch - 80 160 N-Ch - 14 30 P-Ch - 42 85 N-Ch - 12 25 P-Ch - 25 50 N-Ch - - 3 P-Ch - - -3.5 N-Ch - - 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage TF = 25 °C IS ISM VSD P-Ch - - -20 IS = 3.6 A N-Ch - 0.83 1.2 IS = -4 A P-Ch - -0.8 -1.2 N-Ch - 30 60 P-Ch - 42 85 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 3.6 A, dI/dt = 100 A/μs, TJ = 25 °C N-Ch - 27 55 P-Ch - 93 190 Reverse Recovery Fall Time ta P-Channel IF = -4 A, dI/dt = -100 A/μs, TJ = 25 °C N-Ch - 19 - P-Ch - 36 - Reverse Recovery Rise Time tb N-Ch - 11 - P-Ch - 6 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 μs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 VGS = 10 V thru 5 V 8 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 4 V 12 8 6 TC = 25 °C 4 TC = 125 °C 2 4 TC = - 55 °C VGS = 3 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 1.0 2.0 3.0 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.12 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 500 0.09 VGS = 4.5 V 0.06 VGS = 10 V 400 Ciss 300 Coss 200 0.03 100 Crss 0 0 0 4 8 12 16 20 0 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 100 2.2 ID = 4.5 A 8 RDS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 20 VDS = 50 V VDS = 25 V 6 VDS = 80 V 4 2 2.0 ID = 2 A VGS = 10V 1.8 1.6 VGS = 4.5 V 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-0146-Rev. A, 27-Jan-14 150 Document Number: 62937 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.15 100 ID = 2 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.12 TJ = 150 °C 10 TJ = 25 °C 1 0.09 TJ = 125 °C 0.06 TJ = 25 °C 0.03 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 VSD - Source-to-Drain Voltage (V) 8 10 On-Resistance vs. Gate-to-Source Voltage 2.5 30 2.3 25 2.1 20 Power (W) VGS(th) (V) 6 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.9 ID = 250 μA 1.7 4 15 10 1.5 5 1.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited ID - Drain Current (A) ID(on) Limited 10 100 μs 1 1 ms 10 ms 0.1 0.01 100 ms 1s 10 s DC TA = 25 °C BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8.0 ID - Drain Current (A) 6.0 4.0 2.0 0.0 0 25 50 75 100 125 150 125 150 TF - Foot Temperature (°C) Current Derating* 5 Power (W) 4 3 2 1 0 0 25 50 75 100 TF - Foot Temperature (°C) Power Derating, Junction-to-Foot * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 1. Duty Cycle, D = t2 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA (t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 VGS = 10 V thru 5 V 8 ID - Drain Current (A) ID - Drain Current (A) 16 12 VGS = 4 V 8 6 TC = 25 °C 4 TC = 125 °C 2 4 TC = - 55 °C VGS = 3 V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 2.0 3.0 4.0 VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.25 1800 1500 0.20 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 VGS - Gate-to-Source Voltage (V) 0.15 VGS = 10 V 0.10 0.05 Ciss 1200 900 600 300 Crss Coss 0 0 4 8 12 16 0 20 0 40 60 80 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 100 2.2 VDS = 50 V ID = 5 A 8 6 RDS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 20 ID - Drain Current (A) VDS = 25 V VDS = 80 V 4 2 2.0 ID = 2 A VGS = 10V 1.8 1.6 VGS = 4.5 V 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-0146-Rev. A, 27-Jan-14 150 Document Number: 62937 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, (unless otherwise noted) 0.5 100 ID = 2 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.4 TJ = 150 °C 10 TJ = 25 °C 1 0.3 TJ = 125 °C 0.2 TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 50 2.0 40 1.8 30 1.6 ID = 250 μA 1.4 1.2 - 50 2 VSD - Source-to-Drain Voltage (V) Power (W) VGS(th) (V) 0.1 0.0 20 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 IDM Limited ID(on) Limited 100 μs 1 1 ms 10 ms 0.1 0.01 100 ms 1s 10 s DC TA = 25 °C BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4.0 ID - Drain Current (A) 3.0 2.0 1.0 0.0 0 25 50 75 100 125 150 125 150 TF - Foot Temperature (°C) Current Derating* 5 Power (W) 4 3 2 1 0 0 25 50 75 100 TF - Foot Temperature (°C) Power Derating, Junction-to-Foot * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4590DY www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90°C/W 3. TJM - TA = PDMZthJA (t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambien 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62937. S14-0146-Rev. A, 27-Jan-14 Document Number: 62937 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000