Si4102DY Datasheet

Si4102DY
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
ID (A)
0.158 at VGS = 10 V
3.8
0.175 at VGS = 6 V
3.6
d
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Qg (Typ.)
4.6 nC
APPLICATIONS
• High Frequency Boost Converter
• LED Backlight for LCD TV
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
N-Channel MOSFET
Ordering Information: Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
100
± 20
3.8
3
ID
TC = 25 °C
TA = 25 °C
IS
Single Avalanche Current
Single Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Operating Junction and Storage Temperature Range
V
2.7a, b
2.1a, b
8
4
IDM
Pulsed Drain Current
Unit
A
2a, b
6
1.8
4.8
3
A
mJ
W
2.4a, b
1.5a, b
- 55 to 150
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t  10 s
Steady State
Symbol
RthJA
RthJF
Typical
42
Maximum
53
21
26
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4102DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
110
mV/°C
- 7.5
2
4
V
± 100
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 10 V
8
µA
A
VGS 10 V, ID = 2.7 A
0.130
0.158
VGS 6 V, ID = 2.5 A
0.145
0.175
VDS = 10 V, ID = 2.7 A
7

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
370
VDS = 50 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS = 50 V, VGS = 10 V, ID = 2.7 A
VDS = 50 V, VGS = 6 V, ID = 2.7 A
7
1.7
nC
2
f = 1 MHz
VDD = 50 V, RL = 23.8 
ID  2.1 A, VGEN = 6 V, Rg = 1 

3
10
15
10
15
15
10
15
td(on)
10
15
VDD = 50 V, RL = 23.8 
ID  2.1 A, VGEN = 10 V, Rg = 1 
tf
Fall Time
11
10
td(off)
Turn-Off Delay Time
7.1
4.6
tf
tr
Rise Time
pF
20
td(on)
Turn-On Delay Time
40
10
15
12
20
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
4
8
IS = 2.1 A, VGS = 0 V
IF = 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
50
80
ns
75
120
nC
28
22
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4102DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
8
5V
VGS = 10 V thru 6 V
6
I D - Drain Current (A)
I D - Drain Current (A)
6
4
4
TC = 125 °C
2
2
25 °C
4V
0
0.0
- 55 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
1
2
Output Characteristics
5
6
50
60
Transfer Characteristics
500
0.25
Ciss
400
0.20
VGS = 6.0 V
C - Capacitance (pF)
R DS(on) - On-Resistance ()
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.15
VGS = 10 V
0.10
300
200
Crss
100
0.05
Coss
0
0.00
0
2
4
6
0
8
10
20
30
40
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
10
2.2
ID = 2.7 A
VGS = 10 V
ID = 2.7 A
2.0
VDS = 50 V
6
VDS = 80 V
4
1.8
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
3
1.6
1.4
1.2
1.0
2
0.8
0
0
2
4
6
8
0.6
- 50
- 25
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
0
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4102DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.4
R DS(on) - On-Resistance ()
I S - Source Current (A)
ID = 2.7 A
TJ = 150 °C
0.3
0.2
0.1
TJ = 25 °C
1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4.0
50
3.6
40
3.2
30
ID = 250 µA
8
10
20
10
2.4
2.0
- 50
6
On-Resistance vs. Gate-to-Source Voltage
Power (W)
VGS(th) (V)
Source-Drain Diode Forward Voltage
2.8
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
10
I D - Drain Current (A)
Limited by R DS(on)*
100 µs
1
1 ms
10 ms
100 ms
0.1
1s
TA = 25 °C
Single Pulse
10 s
BVDSS Limited
0.01
0.1
1
* VGS
10
DC
100
1000
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: [email protected]
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4102DY
Vishay Siliconix
5
5
4
4
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3
2
3
2
1
1
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4102DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69252.
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6
For technical questions, contact: [email protected]
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000