Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.5 − 0.05 1.45 0.95 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Sealed in the Mini type 3-pin package • Allowing to rectify under (IF(AV) = 1 A) condition • Low forward rise voltage VF 1.9 ± 0.2 ■ Features 2 VR 20 V Repetitive peak reverse voltage VRRM 25 V Average forward current*1 IF(AV) 1.0 A Non-repetitive peak forward surge current*2 IFSM 3 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note) *1 : With a alumina PC board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) + 0.1 0.16 − 0.06 0.8 Unit + 0.2 Rating 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Reverse voltage (DC) Symbol 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.4 − 0.05 0.65 ± 0.15 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M6K Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 20 V 200 µA Forward voltage (DC) VF IF = 1.0 A 0.45 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 180 pF Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 400 MHz 1 MA3XD11 Schottky Barrier Diodes (SBD) IF V F VF Ta 10 IR VR 10−1 1.0 Ta = 125°C 75°C 10−1 25°C 10−2 − 20°C 10−3 10−4 0.6 0.4 IF = 1 A 0.2 100 mA Reverse current IR (A) 0.8 Forward voltage VF (V) Forward current IF (A) Ta = 125°C 10−2 1 75°C 10−3 10−4 25°C 10−5 10−6 10−5 10−6 10 mA 0 0.2 0.4 0.6 0.8 1 1.2 Forward voltage VF (V) IR T a VR = 20 V 10 V Reverse current IR (mA) 5V 1 0.1 0.01 0.001 −40 0 40 80 120 160 Ambient temperature Ta (°C) 2 −40 0 40 80 120 160 Ambient temperature Ta (°C) 100 10 0 200 10−7 0 5 10 15 20 25 Reverse voltage VR (V) 30