Hybrid Si-SiC Modules for High Frequency Industrial Applications ABSTRACT This presentation introduces a new family of 1200V IGBT modules that combine high switching frequency optimized silicon IGBTs with SiC SBD (Schottky Barrier Diode) free wheel diodes to provide dramatically reduced losses in hard switched applications. The performance of these new modules will be compared to currently available standard speed and high frequency optimized IGBT modules. INTRODUCTION Standard industrial IGBT modules are usually optimized for motor drive applications in which the carrier frequency is typically less than 5kHz. For these applications conduction losses tend to dominate so the IGBT chip is optimized primarily for low VCE(SAT). As a result these “standard” devices typically have a rather large turn-off switching loss. Likewise at turn-on the free wheel diode is optimized for a “soft” recovery characteristic that has well controlled dv/dt and is free of oscillations and surge voltages. Often these characteristics come with Hybrid Module Si-IGBT + SiC SBD a corresponding increase in recovery losses. Despite these optimizations standard industrial modules are increasingly being used in applications such as medical, laser, induction heating, and welding power supplies where higher operating frequencies are desired to improve performance and reduce the size of magnetic components. Higher frequency operation is also desirable to reduce the filter size in grid connected inverters for alternative energy SiC SBD applications and active rectification for recovery of mechanical energy in motor drives. Pure SiC Module SiC-MOSFET + SiC SBD The latest generations of modules [1] having both lower VCE(SAT) and lower turn-off losses offer improved performance in high frequency applications but are still seriously limited by their relatively high turn-off and free wheel diode recovery losses. This paper introduces for the first time a standard line-up of industrial modules that utilize both high frequency optimized IGBTs and SiC SBD free wheel diodes to provide dramatically reduced losses in high frequency hard switched applications. Figure 1: Hybrid and Full SiC Modules RATIONAL FOR HYBRID CONFIGURATION 4 VCE(sat) [V] The advantages of SiC as a material for power semiconductor devices is well known [2]. The main drawbacks are the relatively high cost of SiC compared to Silicon and lingering concerns about the long term reliability of SiC devices. One approach to at least partially mitigate these concerns in the near term is to make hybrid modules consisting of Silicon IGBTs and SiC Schottky free wheel diodes as shown in figure 1. This combination of the more mature SiC SBD technology with a wellestablished high frequency optimized silicon IGBT provides both lower cost and greater reliability confidence. 5 3 Low E OFF 1200V CSTBT Standard Industrial 1200V CSTBT 2 1 0 0.0 0.0 0.1 Turn-off Loss [mJ/pulse･A] Figure 2: Low Eoff CSTBT Optimization 0.1 Standard IGBT 1200V LOW EOFF CSTBT CHIP Silicon IGBTs optimized for low turn off losses (Eoff) have been commercially available for more than a decade [3]. In the design of an IGBT chip it is possible to trade VCE(SAT) for lower switching losses by adjusting the minority carrier lifetime. Fig. 2. shows the trade-off curve of saturation voltage versus turn-off switching losses obtained for a 5th generation 1200V CSTBT chip [3]. For the target high frequency industrial applications an optimum point was selected at a VCE(SAT) of 3.8V and an Eoff of 0.028mJ/pulse•A. Fig. 3 shows example switching waveforms comparing the high speed CSTBT to a standard IGBT. These waveforms clearly show the dramatic reduction in turn-off losses and almost complete elimination of the “tail” current. Unfortunately this technology does not improve the hard switched turn-on losses (Eon) which depend mainly on the free wheel diode recovery characteristics. As a result conventional high frequency optimized IGBT modules offer a large performance improvement in applications having a soft turn-on but only a modest improvement in applications like PWM inverters with a hard turn-on switching. IC VCE Low Eoff CSTBT VCE IC Esw(off) ( ) HYBRID MODULE CHARACTERISTICS Fig. 3 Turn‐Off Switching Waveform The advantage of using an SiC Schottky diode instead of a conventional silicon PIN diode is illustrated in Fig. 4. The SiC Schottky almost completely eliminates the reverse recovery loss. In addition, for applications such as PWM inverters that have a hard switched turn-on there is also a significant reduction in turn-on losses due the dramatic reduction in free wheel diode recovery current. Fig. 5 shows the turn-on current waveforms for 600A, 1200V modules. The dramatic reduction of reverse recovery current in the hybrid module is readily apparent. APPLICATION PERFORMANCE Figure 6 shows a comparison of the performance of a standard 6th generation industrial IGBT module, a conventional high frequency optimized IGBT module, and the new hybrid SiC module in a hard switched Turn-On SiC SBD Diode Recovery 200ns/div 150A/div Fast IGBT Module CM600DU-24NFH Si SiC SBD Hybrid IGBT Module CMH600DU-24NFH Si Figure 4: Hybrid Module Hard Turn‐On Waveform Figure 5: Hard Turn‐On Comparison sinusoidal output inverter. At low PWM frequencies which are common in many industrial drives the standard speed module still has the lowest losses. For the modules in this comparison the practical power dissipation limit in a typical air cooled application is around 600W per module. At this power level the standard speed module is limited to about 12KHz, the high frequency optimized all silicon device gives a modest improvement to about 17KHz but the hybrid module is usable up to 50KHz. MODULE LINE-UP A new line-up of 1200V SiC hybrid modules has been developed as shown in Table II. All modules have a dual (half bridge) configuration and are available with nominal current ratings ranging from 100A to 600A. In order to take full advantage of the increased switching speed the modules utilize the same low inductance packaging that was developed for the conventional high frequency devices [5]. Figure 6: Sinusoidal output hard switched PWM inverter loss comparison TABLE II: New Hybrid IGBT Module Line‐Up CONCLUSIONS AND FUTURE WORK This presentation introduces for the first time a new family of standard 1200V IGBT modules that combine high switching frequency optimized silicon IGBTs with SiC SBD (Schottky Barrier Diode) free wheel diodes to provide dramatically reduced losses in hard switched applications. It has been shown that these new devices enable dramatically higher modulation frequencies in high power hard switched inverters. REFERENCES [1] [2] [3] [4] [5] T. Nishiyama, et al., ”The IGBT Module with 6th Generation IGBT” Proceedings PCIM 2009 T. Kobayashi, et al., “Energy Saving Operation for Railway Inverter Systems with SiC Power Module” PCIM Europe 2012 Junji Yamada,et al. “Low Turn-off Switching Energy 1200V IGBT Module”, IEEE IAS Conference 2002 Takahashi, et al., “Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) - A Novel Power Device for High Voltage Application”, The 8th International Symposium on Power Semiconductor Devices and ICs 1996 E. R. Motto, “A New Low Inductance IGBT Module Package”, PCIM Conference 1996 Speaker Biography: Eric R. Motto is principal application engineer with Powerex. He is a senior member of IEEE and holds a BSEE from Pennsylvania State University. Since 1990 Eric has been with Powerex Inc. in Youngwood PA. providing technical support for users of power semiconductor devices. Eric has written and presented more than fifty technical papers at industry conferences and published numerous application notes and magazine articles related to the design and application of high power IGBTs, Intelligent Power Modules and SiC power devices. Hybrid Si – SiC High Power Modules For cost effective high voltage, high current, high frequency switching 1 INTRODUCTION High Power Module Status & Outlook Use of SiC is on the rise More than 20 module types using SiC chips are in various stages of development and production. The cost premium of SiC versus silicon requires applications where significant performance improvements yield high value. These are primarily high frequency (20KHz+), high voltage (1200V+) hard switching applications. Hybrid devices consisting of SiC Schottky in combination with a silicon IGBT provide a good compromise between cost and performance for many industrial applications. Current SiC module offerings are utilizing standard IGBT module packaging and manufacturing processes. Therefore, the maximum operating temperature is limited to 150C-175C. Silicon is not dead yet The Silicon IGBT is expected to continue as the most cost effective power device for most industrial applications for the next five to ten years Currently a new 7th generation family of silicon IGBT modules is being introduced. Support for three level topologies using silicon devices is being expanded for applications requiring increased efficiency at higher voltages 2 Power Device Technology Trend Mitsubishi started development of SiC power devices in the early 1990’s. Reaching the limits of Si performance… 3 Commercialization of Mitsubishi SiC Power Modules 2009 R&D R&D For 11kW Inverter (SiC-MOSFET&SBD) 2010 For Air Conditioner (SiC-SBD) 2011 For Electric Railways (SiC-SBD) 2012 For Servo Drive (SiC-SBD) For 20kW Inverter (SiC-MOSFET&SBD) Component Technology Practical Applications Mitsubishi Electric started research and development of SiC devices in the early 1990’s and has gained knowledge and experience to cost effectively produce high power devices. Schottky Barrier Diode (SBD) and Power MOSFET are the two key chip technologies currently emphasized for power module product applications. Mitsubishi Electric has released several module types to production since 2012. 4 Why SiC? Physical Properties of SiC Compared to Si Large Band Gap Energy makes higher temperature operation feasible. High field break down means that a thinner blocking junction can be used for a given voltage. The thinner junction provides reduced switching and conduction losses especially at higher voltages These properties allow us to make high performance Schottky Diodes and MOSFETs at voltages up to 3000V or more… Also, IGBT structure has no significant benefit until about 5000V 5 Hybrid versus Pure SiC Hybrid Si-IGBT + SiC SBD Pure SiC SiC-MOSFET + SiC SBD Si Module Type Advantages Hybrid Si-SiC Module Pure SiC Module 6 SiC SBD technology considered more mature Lower Cost than Pure SiC Higher temperature operation may be possible with new module designs and chip passivation Lowest switching losses Si-SiC SiC Disadvantages Si-IGBT has higher turn-off loss and/or On-state voltage drop. Frequency of operation limited by Si-IGBT speed Operating temperature limited by Si-IGBT Limited SiC MOSFET application experience. Low Impedance Short Circuit Survival Concerns Hybrid Si-SiC Modules for High Frequency Industrial Applications • • • • Product Range 1200V, 100A-600A Package: Same as existing NFH-Series Power Chips: NFH Si IGBT, SiC SBD Cost: Today ~1.5X all silicon device 7 NFH Series IGBT Chip Development Concept • Start with CSTBT for best VCE(sat) versus Eoff trade-off • Adjust the carrier lifetime to trade VCE(sat) for increased switching speed 8 IGBT ESW Versus VCE(sat) Trade-Off 5 4 Low E OFF 1200V CSTBT Target VCE(sat) [V] 3 Standard Industrial Optimization 1200V CSTBT Chip 2 1 0 0.000 9 0.050 0.100 Turn-off Loss [mJ/pulse*A] 0.150 How do we make the 1200V CSTBT faster ? Optimize buried layer Optimize n- carrier lifetime and concentration Optimize n backside layer and collector n- drift region wafer material n layer p+ collector electrode 10 IGBT Turn-Off Switching Waveform Comparison Standard IGBT Turn-Off Waveform Tj=125C, Vcc=600V, Ic=300A, t:200ns/div IC High speed NFH IGBT Turn-Off Waveform Tj=125C, Vcc=600V, Ic=300A, t:200ns/div VCE Esw(off) 70mJ 11 VCE IC Esw(off) 20mJ Hybrid versus Standard module Turn-On Switching and Diode Reverse Recovery Loss Turn-On SiC SBD Diode Recovery Si SiC SBD 12 Si Hybrid versus Standard module Turn-On Switching Waveform 600A, 1200V Module 200ns/div 200A/div No reverse recovery charge at SiC-SBD turn-off 13 40% CMH600DU-24NFH Performance 99% 14 Hybrid versus Standard Module Inverter Loss Comparison Err Eon 15 Eon Hard Switched Sinusoidal Output Inverter Loss Vs. Switching frequency 600A, 1200V Modules 1400 Standard 6th Gen. IGBT: CM600DY-24S Conditions: Io=212ARMS, PF=0.8, M=1, Vcc=600V, Tj=125C 1200 Loss(W) 1000 High Frequency IGBT CM600DU-24NFH 800 600 400 New Si-SiC Hybrid CMH600DU-24NFH 200 0 0 10 20 30 fc (KHz) 16 40 50 Low Inductance Package Main Terminal Electrode Al Bond Wires 17 Silicone Gel Cu Base Plate Cover Insert Molded Case Power Chips AlN Substrate SiC – NFH Hybrid IGBT Module Line-Up 18 Ratings Ic/Vces Part Number 100A/1200V CMH100DY-24NFH 150A/1200V CMH150DY-24NFH 200A/1200V CMH200DU-24NFH 300A/1200V CMH300DU-24NFH 400A/1200V CMH400DU-24NFH 600A/1200V CMH600DU-24NFH Package 48mm X 94mm 62mm X 108mm 80mm X 110mm 1200A/1700V hybrid SiC 2in1 HVIGBT ■ Type name: CMH1200DC-34S ■ Internal Circuit ■ Outline Using SiC-SBD ■ Performance comparison Item 19 CM1200DC-34N (Si-IGBT,Si-diode) CMH1200DC-34S (Si-IGBT,SiC-SBD) Tj=125°C Tj=125°C Tj=150°C IGBT on-state voltage 2.40V 2.25V 2.30V IGBT turn-on loss 0.40J/P 0.14J/P 0.14J/P IGBT turn-off loss 0.38J/P 0.37J/P 0.39J/P Diode on-state voltage 2.30V 2.20V 2.30V Diode turn-off loss 0.24J/P 0.01J/P 0.01J/P 1200A/1700V hybrid SiC 2in1 HVIGBT Dynamic Performance ■ IGBT turn-on waveforms at nominal conditions Vcc=850V; Ic=1200A; inductive load Vge Ic CM1200DC-34N Vce CMH1200DC-34S Ic=250A/div Vce=250V/div Vge=10V/div t=1μsec/div 68% Reduction Eon=0.18J/pulse Eon=0. 40J/pulse ■ SiC SBD turn-off waveforms at nominal conditions Vcc=850V; IF=1200A; inductive load IF CM1200DC-34N Vr 20 IF IF=500A/div Vr=500V/div t=1μsec/div Erec=0.22J/pulse IF=500A/div Vr=500V/div t=1μsec/div CMH1200DC-34S Vr 95% Reduction Erec=0.01J/pulse 800A/1200V Full-SiC 2in1 Module Feature ・SiC MOSFET & SiC SBD chip ・Low inductance package Ls=10nH (P-N) NEW! Mounting area ・Small mounting area (56% off) 16900mm2 7502mm2 Package outline 130mm 62mm 130mm 121mm Full SiC 800A/1200V(SiC) CM800DY-24S (Si) 21 SiC MOSFET SiC SBD Internal connection Static Performance Comparison 800A/1200V Full-SiC 2in1 Module Condition : Tj=150degC, VGE=+15V, VGS=+15V 2.5 VCEsat, VDS(on) (V) VCEsat, Vds(on) VE, VSD 2.0 1.5 CM800DY-24S (Si) 1.0 0.5 Full SiC 800A/1200V(SiC) 0.0 0 200 400 600 IC, ID (A) M-140507-01 22 800 1000 Dynamic Performance Comparison 800A/1200V Full-SiC 2in1 Module Condition : Tj=150degC, VGE=15V, Vcc=600V, Rg=0ohm(Si), Rg=2.2ohm(SiC) 120 100 80 Eoff (mJ) Eon (mJ) Eoff Eon 100 80 CM800DY-24S (Si) 60 80% off 40 CM800DY-24S (Si) 60 40 20 20 Full SiC 800A/1200V(SiC) Full SiC 800A/1200V(SiC) 0 0 200 400 600 800 0 1000 0 200 IC, ID (A) 600 800 1000 80 180 Err, Erec Esw 160 Err, Erec (mJ) Eon + Eoff (mJ) 400 IC, ID (A) 200 140 CM800DY-24S (Si) 120 100 67% off 80 60 40 60 40 CM800DY-24S (Si) 0 99% off 20 Full SiC 800A/1200V(SiC) 20 Full SiC 800A/1200V(SiC) 0 0 200 400 600 IC, ID (A) 23 51% off 800 1000 0 200 400 600 IE, IS (A) 800 1000 SiC Commercial Module Line-Up 24 Thank You For Your Attention…… Questions? 25