Si4472DY Datasheet

Si4472DY
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
150
RDS(on) (Ω)
a
ID (A)
0.045 at VGS = 10 V
7.7
0.047 at VGS = 8 V
7.5
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd for Switching Losses
• 100 % Rg Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
23 nC
APPLICATIONS
• Primary Side Switch
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4472DY-T1-E3 (Lead (Pb)-free)
Si4472DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Limit
150
± 20
7.7
6.1
5.5b, c
4.5b, c
Operating Junction and Storage Temperature Range
Unit
V
A
50
4.5
2.6b, c
20
20
5.9
3.8
3.1b, c
2b, c
- 55 to 150
TJ, Tstg
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
RthJA
RthJF
Typical
33
17
Maximum
40
21
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
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1
Si4472DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
150
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS /TJ
VGS(th) Temperature Coefficient
ΔVGS(th) /TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
a
Forward Transconductance
RDS(on)
gfs
V
172
mV/°C
- 10
2.5
4.5
V
± 100
nA
VDS = 150 V, VGS = 0 V
1
VDS = 150 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 10 V, VGS = 10 V
30
µA
A
VGS = 10 V, ID = 5 A
0.036
0.045
VGS = 8 V, ID = 5 A
0.0375
0.047
VDS = 15 V, ID = 5 A
23
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1735
VDS = 50 V, VGS = 0 V, f = 1 MHz
tr
pF
37
VDS = 75 V, VGS = 10 V, ID = 5 A
28.5
43
23
35
VDS = 75 V, VGS = 8 V, ID = 5 A
8
f = 1 MHz
0.85
1.3
14
21
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
12
18
22
33
tf
6
10
td(on)
16
24
tr
td(off)
nC
6.5
td(on)
td(off)
160
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω
tf
12
18
20
30
7
12
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
7.7
50
IS = 2.6 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.77
1.2
V
63
95
ns
110
165
nC
49
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.2
60
VGS = 10 V thru 7 V
VGS = 6 V
0.9
I D - Drain Current (A)
I D - Drain Current (A)
48
36
24
TC = 125 °C
0.6
TC = 25 °C
0.3
12
VGS = 5 V
TC = - 55 °C
0
0.0
0
1
2
3
4
5
0
2
VDS - Drain-to-Source Voltage (V)
0.051
1600
C - Capacitance (pF)
2000
0.047
VGS = 8 V
0.043
VGS = 10 V
Ciss
800
400
0.035
0
20
30
40
50
Coss
Crss
0
60
20
ID - Drain Current (A)
40
60
80
100
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.5
10
ID = 5 A
ID = 5 A
VDS = 50 V
VGS = 10 V
2.1
VDS = 75 V
6
VDS = 100 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1200
0.039
10
8
Transfer Characteristics
0.055
0
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
R DS(on) - On-Resistance (Ω)
4
1.7
VGS = 8 V
1.3
0.9
2
0
0
6
12
18
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
24
30
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.20
I S - Source Current (A)
10
R DS(on) - Drain-to-Source On-Resistance (Ω)
100
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
ID = 5 A
0.16
0.12
TJ = 125 °C
0.08
TJ = 25 °C
0.04
0.00
0
0.2
0.4
0.6
0.8
1
0
1.2
2
VSD - Source-to-Drain Voltage (V)
10
160
Power (W)
0.5
VGS(th) (V)
8
200
1.0
ID = 5 mA
- 0.5
- 1.0
- 1.5
- 50
6
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.0
4
VGS - Gate-to-Source Voltage (V)
120
80
40
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature ( C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.01
1s
10 s
DC
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
0.1
* VGS
Safe Operating Area, Junction-to-Ambient
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Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
9
ID - Drain Current (A)
7
5
4
2
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
8.0
2.0
6.4
1.6
4.8
1.2
Power (W)
Power (W)
Current Derating*
3.2
0.8
0.4
1.6
0.0
0.0
0
25
50
75
100
125
150
50
75
100
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
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Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
10
1
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74283.
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Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000