IRF820A, SiHF820A Datasheet

IRF820A, SiHF820A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
500
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
3.0
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
17
Qgs (nC)
4.3
Qgd (nC)
8.5
Configuration
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and current
• Effective Coss Specified
Single
• Compliant to RoHS Directive 2002/95/EC
D
APPLICATIONS
TO-220AB
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
G
G
D
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
S
• Two Transistor Forward
S
• Half bridge
N-Channel MOSFET
• Full bridge
ORDERING INFORMATION
Package
TO-220AB
IRF820APbF
SiHF820A-E3
IRF820A
SiHF820A
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
SYMBOL
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
for 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
LIMIT
500
± 30
2.5
1.6
10
0.40
140
2.5
5.0
50
3.4
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12).
c. ISD ≤ 2.5 A, dI/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.60
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.5
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 1.5 Ab
VGS = 10 V
VDS = 50 V, ID = 1.5 Ab
μA
-
-
3.0
Ω
1.4
-
-
S
-
340
-
-
53
-
-
2.7
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz
490
Output Capacitance
Coss
VGS = 0 V; VDS = 400 V, f = 1.0 MHz
15
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Coss eff.
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V; VDS = 0 V to 400
Vc
28
Qg
Qgs
VGS = 10 V
pF
ID = 2.5 A, VDS = 400 V,
see fig. 6 and 13b
-
-
17
-
-
4.3
nC
Gate-Drain Charge
Qgd
-
-
8.5
Turn-On Delay Time
td(on)
-
8.1
-
-
12
-
-
16
-
-
13
-
-
-
2.5
S
-
-
10
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
-
-
1.6
-
330
500
ns
-
760
1140
nC
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = 250 V, ID = 2.5 A,
Rg = 21 Ω, RD = 97 Ω, see fig. 10b
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
ID, Drain-to-Source Current (A)
4.5 V
0.1
20 µs Pulse Width
TJ = 25 °C
10-2
0.1
VDS, Drain-to-Source Voltage (V)
91057_01
TJ = 150 °C
1
TJ = 25 °C
0.1
4.0
1
4.5 V
20 µs Pulse Width
TJ = 150 °C
0.1
1
91057_02
10
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
3.0
2.5
7.0
8.0
9.0
ID = 2.5 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
102
VDS, Drain-to-Source Voltage (V)
6.0
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
5.0
VGS, Gate-to-Source Voltage (V)
91057_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
10
20 µs Pulse Width
VDS = 50 V
10-2
102
10
1
ID, Drain-to-Source Current (A)
10
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
1
5.5 V
5.0 V
Bottom 4.5 V
91057_04
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
103
Ciss
102
Coss
10
Crss
10
ISD, Reverse Drain Current (A)
C, Capacitance (pF)
104
TJ = 150 °C
1
TJ = 25 °C
1
102
10
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
91057_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
102
ID = 2.5 A
Operation in this area limited
by RDS(on)
VDS = 400 V
15
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
0.4
103
VDS, Drain-to-Source Voltage (V)
91057_05
20
VGS = 0 V
0.1
1
VDS = 250 V
VDS = 100 V
10
5
For test circuit
see figure 13
0
0
91057_06
4
8
12
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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10 µs
100 µs
1
1 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
10
16
QG, Total Gate Charge (nC)
10
91057_08
10 ms
102
103
104
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
3.0
+
- VDD
2.5
ID, Drain Current (A)
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2.0
1.5
Fig. 10a - Switching Time Test Circuit
1.0
VDS
0.5
90 %
0.0
25
50
75
100
125
150
TC, Case Temperature (°C)
91054_09
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.50
0.20
PDM
0.10
0.05
0.1
0.02
0.01
10-2
10-5
91057_11
t1
t2
Single Pulse
(Thermal Response)
10-4
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-2
0.1
1
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+
-
IAS
QG
10 V
V DD
A
QGS
QGD
10 V
0.01 Ω
tp
VG
Fig. 12a - Unclamped Inductive Test Circuit
Charge
VDS
Fig. 12d - Basic Gate Charge Waveform
tp
VDD
VDS
IAS
EAS, Single Pulse Avalanche Energy (mJ)
Fig. 12b - Unclamped Inductive Waveforms
300
ID
1.1 A
1.6 A
Bottom 2.5 A
Top
250
200
VDSav, Avalanche Voltage (V)
700
650
600
550
0.0
150
0.5
1.0
1.5
2.0
2.5
IAV, Avalanche Current (A)
91057_12d
100
Fig. 13a - Typical Drain-to-Source Voltage vs.
Avalanche Current
50
0
25
91057_12c
50
75
100
125
150
Current regulator
Same type as D.U.T.
Starting TJ, Junction Temperature (°C)
50 kΩ
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
0.2 µF
0.3 µF
+
D.U.T.
-
VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91057.
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000