Datasheet

CMOS area image sensors
S10830
S10834
CMOS area image sensors for X-ray imaging
S10830 is CMOS area image sensor suitable for intra-oral X-ray imaging in dental diagnosis. S10830 has 1.5 megapixels (1000
× 1500) with a pixel size of 20 × 20 μm. FOP (fiber optic plate) is used as an input window, making S10830 high imagequality and long-term X-ray life. S10834 is an easy-to-use X-ray imaging module using S10830 with a cable. S10830 has 14bit ADC on chip and LVDS digital output signal. These features are to contribute cost reduction in a user’s system. S10831
and S10835 (1300 × 1700 pixels) are also available.
Features
Applications
Pixel size: 20 × 20 μm
Intra-oral X-ray imaging dental diagnosis
1000 (H) × 1500 (V) pixel format
General X-ray imaging
Frame rate: 0.9 frames/s (MCLK=20 MHz)
Non-destructive inspection
High resolution: 20 Lp/mm typ.
14-bit ADC (virtual dynamic range: 58 dB)
Image data acquisition by Vdd, Vss, MCLK and MST only
These products are components for incorporation into medical and industrial device.
Global shutter operation
Photodiode placed outside the active area to monitor
x-ray irradiation
Structure
Parameter
Pixel size
Pixel pitch
Number of effective pixels
Value
20 × 20
20
1000 (H) × 1500 (V)
Upper part: 766, 768, 770
Lower part: 1000 × 3
20 (H) × 30 (V)
Number of light-shielded pixels
Image size
Unit
μm
μm
pixels
pixels
mm
Absolute maximum ratings
Parameter
Power supply
Input voltage
Consumption current
Operating temperature
Storage temperature
Total dose irradiation
Symbol
Vdd
Vi
Idd
Topr
Tstg
Value
-0.5 to +6
-0.5 to “Vdd + 0.5” (6 max.)
400
0 to +50
-20 to +70
Unit
V
V
mA
°C
°C
D
50
Gy
www.hamamatsu.com
1
CMOS area image sensors
S10830, S10834
Recommended operating conditions
Parameter
Symbol
Vdd
Vsigi(H)
Vsigi(L)
Power supply
High
Low
Digital input voltage*1
Min.
4.75
2.4
0
Typ.
5.0
3.3
-
Max.
5.5
Vdd + 0.25
0.4
Unit
V
V
*1: Vsigi(H) is a “High” period voltage of MST and MCLK, Vsigi(L) is a “Low” period voltage of MST and MCLK.
Electrical characteristics (Ta=25 °C, Vdd=5 V)
Parameter
Master clock pulse frequency
Digital output format
Image sensor*2
Digital output
frequency
Trigger photodiode*3
Digital output voltage*4
Digital output rise time*4 *5
Digital output fall time*4 *5
Image sensor*6
Video data rate
Trigger photodiode
Start pulse interval*7
Image sensor*8
Integration time
Trigger photodiode*9
Image sensor*10
Consumption current
Trigger photodiode*11
Symbol
f(MCLK)
f(DO)
V(DOmag)
tr(DO)
tf(DO)
VR
VR2
T(ST-I)
Min.
1M
Typ.
20 M
LVDS differential output
f(MCLK)
f(MCLK)/56
350
2
2
f(MCLK)/14
f(MCLK)/7168
PW(MST) + 394/f(MCLK)
6608/f(MCLK)
55
25
22.7 M
P1
P2
-
Max.
40 M
5
5
-
Unit
Hz
Hz
mV
ns
ns
Hz
Hz
MCLK
s
s
mA
mA
110
50
Refer to “Timing chart”, Image data readout.
Refer to “Timing chart”, Trigger photodiode data readout.
The output voltage difference between LVDS differential terminals with 100 Ω termination
The time in output from 10% to 90% or from 90% to 10% with 2 m long cable
It takes 14 master clock pulse cycles to read out 1 pixel
It takes 22.7 M master clock pulse cycles to read out 1 frame of an image. The readout of the next frame must be started after
finishing the readout of previous frame.
*8: Refer to “Timing chart”, PW(MST) is “Low” pulse width of MST (master start pulse).
e.g.) When the PW(MST) is 10 ms and f(MCLK) is 20 MHz:
Integration time = 10 ms + 394/20 M = 10.0197 ms
*9: Refer to “Timing chart”, The trigger photodiode is output every 7168 MCLK cycles. The integration time is 6608 MCLK cycles, and
560 MCLK cycles are used for the reset period of trigger photodiode.
e.g.) When the f(MCLK) is 20 MHz:
Integration time = 6608/20 M = 330.4 μs
*10: The consumption current of image sensor chip only. f(MCLK)=20 MHz
*11: The consumption current of image sensor chip only. Without 100 Ω termination (see “Output format” in P.7). f(MCLK)=20 MHz
*2:
*3:
*4:
*5:
*6:
*7:
Resolution (S10834)
Response (S10834)
t
(X-ray source: 60 kVp, filter: ABS 1.5 mm )
1.0
(X-ray source: 60 kVp, filter: ABS 1.5 mmt)
6000
1500
0.9
Output (LSB)
0.7
CTF
0.6
0.5
0.4
0.3
4000
1000
2000
500
Output voltage (mV)
0.8
0.2
0.1
0
0.0
0
2
4
6
8
10
12
14
16
18
20
Spatial frequency (line pairs/mm)
0
100
200
300
0
400
Absorbed dose (µGy)
KMPDB0358EA
KMPDB0359EA
2
CMOS area image sensors
S10830, S10834
Electrical and optical characteristics (image sensor, Ta=25 °C, Vdd=5 V)
Parameter
Dark output voltage (effective pixel)*
12
Saturation output voltage
Random noise*13
Dynamic range*14
Sensitivity*15
Saturation dose*15
Photo response non-uniformity*12 *16
White spot
Point
defect*17
Black spot
Blemish
Cluster defect*18
Big cluster defect*19
Defect line*20
X-ray resolution
Symbol
Vdark
Ddark
Vsat
Dsat
VRN
DRN
DR
VRES
DRES
Lsat
PRNU
DL
Reso
Min.
0.8
3280
45
2.3
9.4
180
15
Typ.
50
200
1.2
4900
1500
6.2
58
3.4
14
350
20
Max.
120
490
4500
18
4.5
18
530
±30
20
20
3
0
15
-
Unit
mV/s
LSB/s
V
LSB
μV rms
LSB rms
dB
mV/μGy
LSB/μGy
μGy
%
lines
Lp/mm
*12: Average value. Excluding defect pixels.
*13: Integration time = 1 s
*14: Dynamic range = 20 × log
Saturation output voltage
Random noise
*15: 60 kV tube voltage, no Al plate at X-ray emission
*16: PRNU (%) = ∆V / V × 100
V: average of pixel outputs, ∆V: difference between V and min. or max. output
*17: White spot > 1.2 V/s (4900 LSB/s) at effective pixel: 10 times of the maximum of dark output
Black spot > 50% reduction in response relative to adjacent pixels, measured at half of the saturation output
*18: Continuous 2 to 9 point defects
*19: Continuos 10 or more point defects. (except a defect line)
*20: A defect line consists of 10 or more point defects in 1 pixel width.
Electrical and optical characteristics (trigger photodiode, Ta=25 °C, Vdd=5 V)
Parameter
Saturation voltage
Random noise
Sensitivity*21
Offset of A/D converter
Symbol
Vsat
Dsat
VRN
DRN
VRES
DRES
-
Min.
-
Typ.
2.2
450
10
2
6.8 × 102
200
430
Max.
2.9
590
-
Unit
V
LSB
mV rms
LSB rms
mV/μGy
LSB/μGy
LSB
*21: Integration time=330 μs, f(MCLK)=20 MHz
Electrical and optical characteristics (A/D converter, Ta=25 °C, Vdd=5 V)
Parameter
Resolution
Connection time
Conversion voltage range
Symbol
RESO
tCON
-
Image sensor
Trigger photodiode
14
1/14 × f(MCLK)
0 to 4
10
1/7168 × f(MCLK)
0 to Vdd
Unit
bit
s
V
3
CMOS area image sensors
S10830, S10834
Block diagram
Vertical shift register
Trigger photodiode
Effective pixels
(1000 × 1500)
Amp
Outclk
10-bit
ADC
Outdata
14-bit
ADC
Amp
Column CDS
Timing generator
Horizontal shift register
MCLK
MST
Vdd
Vss
KMPDC0356EB
Timing chart
Total timing chart
X-ray
MCLK(input)
20 MHz (3.3 V)
(B)
(C)
MST (input)
OUTCLK (output)
0.357 MHz
20 MHz LVDS
(A)
OUTDATA (output)
Data Data Data Data Data Data Data Data
(Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.)
State of image sensor
1000 × 1500 (+6) pixels
Reset
Integration
(electrical shutter is closed) (electrical shutter is open)
Data
1st
row
(D)
1
Data
2nd
row
...
Data
1506th
row
Readout image
Data Data Data Data Data Data
(Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.)
(E), (F)
Tran. Read Tran. Read Tran.
Tran. Read
1st 1st 2nd 2nd 3rd . . . 1506th 1506th
row row row row row
row
row
Reset (electrical shutter is closed)
Reset only
Integration and readout
Integration and readout
State of trigger photodiode
0.357 MHz
4
MCLK
MST
OUTDATA
D3
D2
D1
D0
(A) Continuously checking some X-ray radiation with monitoring the data of trigger photodiode by an external circuit.
(B) The MST should be set at low and integration of each pixel is to start when X-ray input is detected.
The Integration time is almost same as the low width of the MST. It can be controlled by an external circuit
(software, firmware, etc.).
(C) Just after the MST is set at high, the integration is to finish and readout starts.
(D) Each readout row has a header part, which consists of 28 high levels of the OUTDATA.
(E), (F) After completion readout, the OUTCLK and the OUTDATA automatically move to state of trigger photodiode.
KMPDC0357EB
4
CMOS area image sensors
S10830, S10834
(A) Trigger photodiode data readout
MCLK 20 MHz
MST
1
Outclk →0.357 MHz
Outdata →0.357 MHz
21
129
9876543210
(Vsync)
(Hsync)
Pixel
Reset
Integration
Trigger photodiode
Trigger photodiode
readout
Integration
Reset
Reset
Readout
Readout
KMPDC0358EA
(B) Image data integration start
1
14
MCLK 20 MHz
MST
Outclk →0.357 MHz
Outdata →0.357 MHz
(Vsync)
(Hsync)
Pixel
Reset
Integration
Reset or integration
Trigger photodiode
Trigger photodiode
readout
KMPDC0359EA
(C) Image data readout start
1
4
10
408
1362
1390
MCLK 20 MHz
MST
Outclk →0.357 MHz
Outdata →0.357 MHz
→20 MHz
→20 MHz
13 12 11 10 9 8 7 6
(Vsync)
(Hsync)
Pixel
Integration
Pixel readout
Trigger photodiode
Reset
Hold on
all pixels
Reset or integration
Readout
1st row
Transfer of
the 1st row
1st pixel
Reset
Trigger photodiode
readout
Note: All on-chip timing circuits are reset at rise of MST, and the operations of trigger photodiode readout are stopped at this time.
KMPDC0360EB
5
CMOS area image sensors
S10830, S10834
(D) Image data readout
MCLK 20 MHz
MST
Outclk →20 MHz
Outdata →20 MHz
(Vsync)
1
29
14029
43
15009
13 12 11 10 9 8 7 6 5 4 3 2 1 0 13 12 11 10 . . . 13 12 11 10 9 8 7 6 5 4 3 2 1 0
(Hsync)
Reset
Readout
1st row
1st pixel
Pixel
Pixel readout
2nd ...
1000th pixel
Transfer
of the
2nd row
Readout
2nd row
Reset
Trigger photodiode
Trigger photodiode
readout
KMPDC0361EB
(E) Image readout end
MCLK 20 MHz
MST
Outclk →20 MHz
Outdata →20 MHz
(Vsync)
1
56
→0.357 MHz
→0.357 MHz
3210
(Hsync)
Pixel
Reset
Readout
1506th row
1000th pixel
Pixel readout
Trigger photodiode
Integration
Reset
Trigger photodiode
readout
KMPDC0362EB
(F) Image readout end (trigger photodiode)
MCLK 20 MHz
MST
1
21
0.357 MHz
0.357 MHz
Outclk 20 MHz
Outdata 20 MHz
(Vsync)
129
9876543210
(Hsync)
Reset
Pixel
Pixel readout
Trigger photodiode
Trigger photodiode
readout
Readout
1506th row
1000th pixel
Reset
Integration
Reset
Integration
Readout
Reset
Readout
Note: Just after image data is finished, the 1st readout of trigger photodiode is not valid, because integration time is shorter than others.
KMPDC0363EB
6
CMOS area image sensors
S10830, S10834
Output format (Ta=25 °C, Vdd=5 V)
With 100 Ω termination (LVDS output mode)
Parameter
Differential output swing
Offset voltage
Current (100 Ω termination)
Symbol
Vod
Vos
I100
Min.
247
-
Typ.
1.2
3.5
Max.
454
-
Unit
mV
V
mA
Min.
-
Typ.
2.4
0
Max.
0.4
Unit
V
V
Without 100 Ω termination (CMOS output mode)
Output voltage
Parameter
High level
Low level
Symbol
Vod
Vos
Dimensional outline (unit: mm)
S10830
21.8
Scintillator
2.5
2.4
20.0
FOP
3.2
Photosensitive
area
30.0
32.1
35.4
Connector
Molex 52745-1497
1
14
2.0
4.7
CMOS chip
1.7
KMPDA0266EC
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Description
Vdd
Vss
Outdata a
Reserve
Outdata b
Reserve
Outclk a
Reserve
Outclk b
Reserve
MST
Reserve
MCLK
Reserve
I/O
I
I
O
O
O
O
I
I
-
Function
Power supply voltage (5 V)
Ground
Video output signal (LVDS, positive)
Video output signal (LVDS, negative)
Trigger signal (LVDS, positive)
Trigger signal (LVDS, negative)
Master start signal
Master clock signal
7
CMOS area image sensors
S10830, S10834
S10834
Entire view
Connector
(CL232-0001-4-50: 8 terminals)
CMOS sensor
Heat shrink tubing
Cable
Ferrite
1000
Pin no.
Pin no. 1
Shroud
Description
1
Vdd (5 V)
2
Vss (ground)
3
MST
4
Outdata a
5
Outdata b
6
Outclk a
7
Outclk b
8
MCLK
KMPDA0252EB
25.0
CMOS sensor
5.3
13.0
39.0
KMPDA0253EB
8
CMOS area image sensors
S10830, S10834
Photosensitive area
114 pixels
1500 pixels
Effective pixels
(1000 × 1500 pixels)
114 pixels
114 pixels
Upper light-shielded pixels
(766, 768, 770 pixels)
Vertical shift register
scanning direction
Monitor photodiode
all around effective pixels
Horizontal shift register
scanning direction
Lower light-shielded pixels
(1000 × 3 pixels)
KMPDC0448EA
Notice
· This product is warranted for a period of 12 months after the date of the shipment.
The warranty is limited to replacement or repair of any defective product due to defects in workmanship or materials used in
manufacture. The warranty does not cover loss or damage caused by natural disaster, misuse (including modifications and any use
not complying with the environment, application, usage and storage conditions described in this datasheet), or total radiation dose
over 50 Gy (incident X-ray energy: 70 kVp) even within the warranty period.
Information described in this material is current as of April, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1113E09 Apr. 2014 DN
9
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