Datasheet

TDI-CCD area image sensor
S7199-01/-01F
Image sensor with a long, narrow photosensitive area for X-ray imaging
The S7199-01 is a front-illuminated FFT-CCD image sensor developed for X-ray imaging. An FOS (Fiber Optic plate with
Scintillator) sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high sensitivity. Two CCD
chips are arranged in close proximity to configure a long photosensitive area (approx. 150 mm).
The S7199-01 CCD image sensor features TDI mode operation that allows capturing clear, sharp X-ray images of objects
moving on a belt conveyor, making it ideal for non-destructive X-ray inspection. FOP type not coated with scintillator material is also provided (S7199-01F).
Features
Applications
1536 × 128 pixel (× 2 chips)
General X-ray imaging
Pixel size: 48 × 48 μm
Non-destructive inspection
Buttable structure of 2 chips
Dental panorama
TDI (time delay integration) operation
100% fill factor
Wide dynamic range
Low dark current
Low readout noise
MPP operation
Specifications
Parameter
S7199-01
S7199-01F
Full frame transfer or TDI
Window
FOS (fiber optic plate with scintillator)
FOP (fiber optic plate)*1
Photosensitive area (H × V)
73.728 × 6.144 mm (× 2 chips)
X-ray sensitive area
146 × 6 mm
Pixel size (H × V)
48 × 48 μm
Number of total pixels (H × V)
1536 × 128 (× 2 chips)
Number of effective pixels (H × V)
1536 × 128 (× 2 chips)
Fill factor
100%
2 phases
Vertical clock phase
Horizontal clock phase
2 phases
Output circuit
Two-stage MOSFET source follower with load resistance
X-ray resolution
4 to 6 Lp/mm at 60 kVp, 20 μGy
Total dose irradiation
50 Gy max.
Package
40-pin ceramic
Cooling
Non-cooled
*1: When using this product for X-ray detection, the user needs to affix a phosphor sheet, etc. to the FOP.
CCD structure
www.hamamatsu.com
1
TDI-CCD area image sensor
S7199-01/-01F
Absolute maximum ratings (Ta=25 °C )
Parameter
Storage temperature
Operating temperature
OD voltage
RD voltage
ISV voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Symbol
Tstg
Topr
VOD
VRD
VISV
VIGV
VIGH
VSG
VOG
VRG
VTG
VP1AV, VP2AV
VP1BV, VP2BV
VP1AH, VP2AH
VP1BH, VP2BH
Vertical clock voltage
Horizontal clock voltage
Min.
-20
0
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
Typ.
-
Max.
+70
+40
+20
+18
+18
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
-15
-
+15
V
-15
-
+15
V
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Output transistor ground voltage
Substrate voltage
Vertical input source
Vertical input gate
Test point
Horizontal input gate
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
Symbol
VOD
VRD
VOG
VSSA
VSSD
VISV
VIGV
VIGH
VP1AVH, VP2AVH
VP1BVH, VP2BVH
VP1AVL, VP2AVL
VP1BVL, VP2BVL
VP1AHH, VP2AHH
VP1BHH, VP2BHH
VP1AHL, VP2AHL
VP1BHL, VP2BHL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
Min.
12
12
-0.5
-5
-8
-8
Typ.
15
13
2
0
0
VRD
0
0
Max.
14
5
-
0
3
6
-9
-8
-7
0
3
6
-9
-8
-7
0
-9
0
-9
0
-9
3
-8
3
-8
3
-8
6
-7
6
-7
6
-7
Unit
V
V
V
V
V
V
V
V
V
V
V
2
TDI-CCD area image sensor
S7199-01/-01F
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Reset clock frequency
Vertical shift register capacitance
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Transfer efficiency
DC output level
Output impedance
Power dissipation
Symbol
fc
frg
CP1AV, CP2AV
CP1BV, CP2BV
CP1AH, CP2AH
CP1BH, CP2BH
CSG
CRG
CTG
CTE
Vout
Zo
P
Remark
*2
*3
*3
* 3 *4
Min.
-
Typ.
2
2
Max.
4
4
Unit
MHz
MHz
-
15000
-
pF
-
500
-
pF
0.99995
5
-
15
10
500
0.99999
8
500
60
11
-
pF
pF
pF
V
Ω
mW
Typ.
Fw × Sv
1200
1200
1200
0.6
8
90
60
20000
Max.
Unit
24
120
-
V
±10
±30
6
10
10
0
0
-
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: VOD=15 V
*4: Power dissipation of the on-chip amplifier (each chip)
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Saturation output voltage
Symbol
Vsat
Vertical
Horizontal
Summing
Full well capacity
CCD node sensitivity
Dark current (MPP mode)
Readout noise
Ta=25 °C
Ta=-40 °C
Remark
Fw
Sv
DS
*5
*6
Nr
*7
Min.
600
600
600
0.45
5000
Dynamic range
DR
*8
X-ray response nonuniformity (S7199-01)
XRNU
*9
Photoresponse nonuniformity (S7199-01F)
PRNU
*10
White spots
Point defects*11
Black spots
Blemish
Cluster defects
*12
Column defects
*13
X-ray resolution (S7199-01)
4
ΔR
*5: VOD=15 V
*6: Dark current doubles for every 5 to 7 °C.
*7: Operating frequency is 2 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60kVp, measured at half of the full well capacity.
Measuring region that is within 146.0 mm (H) × 6.0 mm (V) (refer to dimensional outline)
XRNU [%] =
Fixed pattern noise (peak to peak)
Signal
keμV/eke /pixel/s
-
e- rms
%
Lp/mm
× 100
*10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 565 nm)
PRNU [%]=
Fixed pattern noise (peak to peak)
Signal
× 100
*11: White spots > 20 times of typ. dark signal (8 ke-/pixel/s)
Black spots > 50% reduction in response relative to adjacent pixels, measured at half of the full well capacity
*12: Continuous 2 to 9 point defects
*13: Continuous >10 point defects
3
TDI-CCD area image sensor
S7199-01/-01F
Resolution (S7199-01)
Output voltage vs. X-ray response (S7199-01)
(X-ray source: 60 kVp)
1.0
(X-ray source: 70 kVp, filter: aluminum 4 mmt)
1000
0.9
Output voltage (mV)
0.8
0.7
CTF
0.6
0.5
0.4
0.3
500
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
0
10
0
10
20
30
40
X-ray exposure (µGy)
Spatial frequency (Line pair/mm)
KMPDB0248EA
KMPDB0249EB
Device structure
Left chip
Right chip
B20 ISV
B19 IGV
......
......
......
RD
A2
SSA
OS
OD
A3
A4
A5
OG
A6
SG
A7
B18 P1BV
B17 P2BV
B16 P1AV
B15 P2AV
B14 TG
B13 RG
S6
S5
S4
S3
S2
S1
A1
6
5
4
3
2
1 2 3 4 ...... 125 126 127 128
1536
1535
1534
1533
1532
1531
RG
......
S1536
S1535
S1534
S1533
S1532
S1531
P2AV A19
TG A20
1531
1532
1533
1534
1535
1536
P1AV A18
S1531
S1532
S1533
S1534
S1535
S1536
P2BV A17
1 2 3 4 ...... 125 126 127 128
2
3
4
5
6
P1BV A16
S1
S2
S3
S4
S5
S6
ISV A14
IGV A15
B12
RD
B11 SSA
B10 OS
B9 OD
A8
P2AH
A9
P1AH
A10
SSD
A11 A12 A13
P2BH P1BH IGH
B1
B2
IGH P1BH
S1, ... , S1536: effective pixels
B3
P2BH
B4
SSD
B5
P1AH
B6
P2AH
B8
OG
B7
SG
S1, ... , S1536: effective pixels
KMPDC0110EA
Pixel format
Blank
0
Optical black
0
←
Left Horizontal Direction →
Right
Isolation
Effective
Isolation
0
1536
0
Optical black
0
Blank
0
Top ← Vertical direction → Bottom
Isolation
Effective
Isolation
0
128
0
4
TDI-CCD area image sensor
S7199-01/-01F
Timing chart (TDI operation)
Tpwv
P1AV, P1BV
P2AV, P2BV
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
Enlarged view
Tovr
Tpwh, Tpws
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
Tpwr
OS
S1
S2
S3
S4
S5
S1535
S1536
KMPDC0142EB
KMPDC0142EB
5
TDI-CCD area image sensor
S7199-01/-01F
Timing chart (TDI operation, 2 × 2 pixel binning)
Tpwv
P1AV, P1BV
P2AV, P2BV
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
Enlarged view
Tovr
Tpwh, Tpws
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
Tpwr
OS
S1 + S2
S3 + S4
S1535 + S1536
KMPDC0111EC
KMPDC0111EC
P1AV, P1BV,
P2AV, P2BV, TG
P1AH, P1BH,
P2AH, P2BH
SG
RG
TG-P1AH, P1BH
Parameter
Pulse width
Rise and fall times
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Overlap time
Symbol
tpwv
tprv, tpfv
tpwh
tprh, tpfh
tpws
tprs, tpfs
tpwr
tprr, tpfr
tovr
Remark
14
*
15
*
*15
Min.
30
200
125
10
125
10
10
5
10
Typ.
60
250
50
250
50
50
20
Max.
-
Unit
μs
ns
ns
ns
%
ns
ns
%
ns
ns
μs
*14: TG terminal can be short-circuited to P2AV terminal.
*15: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
6
TDI-CCD area image sensor
S7199-01/-01F
Dimensional outline (unit: mm)
S7199-01
±50 µm max.
DImensional outline (S7199, S7199-01, unit: mm)
Left chip
Right chip
Edge pixel
Dead space: 130 to 200 µm
FOP
150.0 ± 0.2
75.0 ± 0.4
30.48 ± 0.5
1.6
B20 ← B14
25.4
A20 ← A14
FOP
7.2
A1
→
→
B1
A13
B13
22.86 ± 0.5 22.86 ± 0.5
3.4
Scintillator
0.45
2.54
12.7 ± 0.7*
28.0 ± 0.3
FOP
3.0
75.0 ± 0.4
30.48 ± 0.5
TDI direction
5.6
149.5 ± 0.5
12.7 ± 0.7*
X-ray
Photosensitive area:
146.0 (H) × 6.0 (V)
* Distance between the center of
photosensitive area and the I/O pins
KMPDA0129EC
KMPDA0129EC
±50 µm max.
S7199-01F
Left chip
Right chip
Edge pixel
Dead space: 130 to 200 µm
FOP
3.0
149.5 ± 0.5
30.48 ± 0.5
1.6
B20 ← B14
25.4
A20 ← A14
FOP
7.2
A1
→
A13
B1
→
B13
3.4
22.86 ± 0.5 22.86 ± 0.5
0.45
2.54
12.7 ± 0.7*
TDI direction
28.0 ± 0.3
30.48 ± 0.5
12.7 ± 0.7*
5.2
FOP
150.0 ± 0.2
* Distance between the center of
photosensitive area and the I/O pins
KMPDA0282EC
7
TDI-CCD area image sensor
S7199-01/-01F
Pin connections
Pin no.
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
B11
B12
B13
B14
B15
B16
B17
B18
B19
B20
Symbol
RG
RD
SSA
OS
OD
OG
SG
P2AH
P1AH
SSD
P2BH
P1BH
IGH
ISV
IGV
P1BV
P2BV
P1AV
P2AV
TG
IGH
P1BH
P2BH
SSD
P1AH
P2AH
SG
OG
OD
OS
SSA
RD
RG
TG
P2AV
P1AV
P2BV
P1BV
IGV
ISV
Description
Reset gate
Reset drain
Analog ground
Output transistor source
Output transistor drain
Output gate
Summing gate
CCD horizontal register clock A-2
CCD horizontal register clock A-1
Digital ground
CCD horizontal register clock B-2
CCD horizontal register clock B-1
Test point (horizontal input gate)
Test point (vertical input source)
Test point (vertical input gate)
CCD vertical register clock B-1
CCD vertical register clock B-2
CCD vertical register clock A-1
CCD vertical register clock A-2
Transfer gate
Test point (horizontal input gate)
CCD horizontal register clock B-1
CCD horizontal register clock B-2
Digital ground
CCD horizontal register clock A-1
CCD horizontal register clock A-2
Summing gate
Output gate
Output transistor drain
Output transistor source
Analog ground
Reset drain
Reset gate
Transfer gate
CCD vertical register clock A-2
CCD vertical register clock A-1
CCD vertical register clock B-2
CCD vertical register clock B-1
Test point (vertical input gate)
Test Point (vertical input source)
Remark
Same timing as P2AH
Same timing as P1AH
Shorted to RD
Same timing as P1AV
Same timing as P2AV
Same timing as P1AH
Same timing as P2AH
Same timing as P2AV
Same timing as P1AV
Shorted to RD
8
TDI-CCD area image sensor
S7199-01/-01F
Precautions (electrostatic countermeasures)
∙ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use an anti-static wrist band,
in order to prevent electrostatic damage due to electrical charges from friction.
∙ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
∙ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
∙ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Take these measures as needed to prevent electrostatic
damage to the sensor.
Notice
· This product is warranted for a period of 12 months after the date of the shipment.
The warranty is limited to replacement or repair of any defective product due to defects in workmanship or materials used in
manufacture. The warranty does not cover loss or damage caused by natural disaster, misuse (including modifications and any use
not complying with the environment, application, usage and storage conditions described in this datasheet), or total radiation dose
over 50 Gy (incident X-ray energy: 70 kVp) even within the warranty period.
Information described in this material is current as of February, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1077E12 Feb. 2014 DN
9
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