Datasheet

TDI-CCD area image sensor
S8658-01/01F
Image sensor with a long, narrow photosensitive area for X-ray imaging
The S8658-01 is an front-illuminated FFT-CCD image sensor developed for X-ray imaging. A FOS (Fiber Optic plate with
Scintillator) sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high precision. Three CCD
chips are arranged in close proximity to configure a long photosensitive area (approx. 220 mm).
The S8658-01 CCD image sensor features TDI operation that allows capturing clear, sharp X-ray images of objects moving
on a belt conveyor, making it ideal for non-destructive X-ray inspection. FOP type not coated with scintillator material is also
provided (S8658-01F).
Features
Applications
1536 × 128 pixel (× 3 chips)
General X-ray imaging
Pixel size: 48 × 48 μm
Non-destructive inspection
Slit-like image of 220 mm long by aligning 3 CCD chips
together
Dental panorama, cephalo
TDI (time delay integration) operation
100% fill factor
Wide dynamic range
Low dark current
MPP operation
Specifications
Parameter
CCD structure
Window
Photosensitive area (H × V)
X-ray photosensitive area
Pixel size (H × V)
Number of total pixels (H × V)
Number of effective pixels (H × V)
Fill factor
Vertical clock phase
Horizontal clock phase
Output circuit
X-ray resolution
Total dose irradiation
Package
Cooling
S8658-01
S8658-01F
Full frame transfer or TDI
FOS (fiber optic plate with scintillator)
FOP (fiber optic plate)*1
73.728 × 6.144 mm (× 3 chips)
220 × 6 mm
48 × 48 μm
1536 × 128 pixel (× 3 chips)
1536 × 128 (× 3 chips)
100%
2 phases and 2 lines
2 phases and 2 lines
Two-stage MOSFET source follower with load resistance
4 to 6 Lp/mm at 60 kVp, 20 μGy
50 Gy max.
60-pin ceramic
Non-cooled
*1: When using this product for X-ray detection, the user must affix a phosphor sheet to the photosensitive area.
www.hamamatsu.com
1
TDI-CCD area image sensor
S8658-01/-01F
Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
OD voltage
RD voltage
ISV voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Symbol
Tstg
Topr
VOD
VRD
VISV
VIGV
VIGH
VSG
VOG
VRG
VTG
VP1AV, VP2AV
Vertical clock voltage
VP1BV, VP2BV
VP1AH, VP2AH
Horizontal clock voltage
VP1BH, VP2BH
Note: Exceeding the absolute maximum ratings even momentarily may
product within the absolute maximum ratings.
Min.
-20
0
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
Typ.
-
Max.
+70
+40
+20
+18
+18
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
-15
-
+15
V
-15
-
+15
V
cause a drop in product quality. Always be sure to use the
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Output transistor ground voltage
Substrate voltage
Vertical input source
Vertical input gate
Test point
Horizontal input gate
High
Vertical shift register clock voltage
Low
High
Horizontal shift register clock voltage
Low
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
Symbol
VOD
VRD
VOG
VSSA
VSSD
VISV
VIGV
VIGH
VP1AVH, VP2AVH
VP1BVH, VP2BVH
VP1AVL, VP2AVL
VP1BVL, VP2BVL
VP1AHH, VP2AHH
VP1BHH, VP2BHH
VP1AHL, VP2AHL
VP1BHL, VP2BHL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
Min.
12
12
-0.5
-5
-8
-8
Typ.
15
13
2
0
0
VRD
0
0
Max.
18
14
5
-
0
3
6
-9
-8
-7
0
3
6
-9
-8
-7
0
-9
0
-9
0
-9
3
-8
3
-8
3
-8
6
-7
6
-7
6
-7
Unit
V
V
V
V
V
V
V
V
V
V
V
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Reset clock frequency
Vertical shift register capacitance
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Transfer efficiency
DC output level
Output impedance
Power dissipation
Symbol
fc
frg
CP1AV, CP2AV
CP1BV, CP2BV
CP1AH, CP2AH
CP1BH, CP2BH
CSG
CRG
CTG
CTE
Vout
Zo
P
Remark
*2
*3
*3
*3 *4
Min.
-
Typ.
2
2
Max.
4
4
Unit
MHz
MHz
-
15000
-
pF
-
500
-
pF
0.99995
5
-
15
10
500
0.99999
8
500
60
11
-
pF
pF
pF
V
Ω
mW
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: VOD=15 V
*4: Power dissipation of the on-chip amplifier (each chip)
2
TDI-CCD area image sensor
S8658-01/-01F
Electrical and optical characteristics (Ta=25 °C unless otherwise noted)
Parameter
Saturation output voltage
Symbol
Vsat
Vertical
Horizontal
Summing
Full well capacity
Fw
CCD node sensitivity
Dark current (MPP mode)
Ta=25 °C
Ta=-40 °C
Readout noise
Remark
Dynamic range
X-ray response nonuniformity (S8658-01)
Photo response nonuniformity (S8658-01F)
White spots
Point defects*11
Black spots
Blemish
Cluster defects
Column defects
X-ray resolution (S8658-01)
Sv
DS
*5
*6
Nr
*7
DR
XRNU
PRNU
*8
*9
*10
-
*12
*13
Min.
600
600
600
0.45
5000
Typ.
Fw × Sv
1200
1200
1200
0.6
8
90
60
20000
Max.
24
120
-
-
±10
±30
4
6
10
10
0
0
-
ΔR
VOD=15 V
Dark current doubles for every 5 to 7 °C.
Operating frequency=2 MHz
Dynamic range = Full well capacity / Readout noise
X-ray irradiation of 60kVp, measured at half of the full well capacity
Measuring region that is within 146.0 mm (H) × 6.0 mm (V) (refer to dimensional outline)
Fixed pattern noise (peak to peak)
XRNU [%] =
× 100
Signal
*10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 565 nm)
Fixed pattern noise (peak to peak)
PRNU [%] =
× 100
Signal
*11: White spots > 20 times of typ. dark signal (8 ke-/pixel/s)
Black spots > 50% reduction in response relative to adjacent pixels, measured at half of the full well capacity
*12: continuous 2 to 9 point defects
*13: continuous >10 point defects
Unit
V
keμV/eke-/pixel/s
e-rms
%
Lp/mm
*5:
*6:
*7:
*8:
*9:
Resolution (S8658-01)
Output voltage vs. X-ray exposure (S8658-01)
(X-ray source: 60 kVp)
1.0
(X-ray source: 70 kVp, filter: aluminum 4 mmt)
1000
0.9
Output voltage (mV)
0.8
0.7
CTF
0.6
0.5
0.4
0.3
500
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0
0
10
20
30
40
X-ray exposure (μGy)
Spatial frequency (Line pair/mm)
KMPDB0248EA
KMPDB0249EB
3
TDI-CCD area image sensor
S8658-01/-01F
Device structure
Left chip (chip A), Center chip (chip B)
Right chip (chip C)
C20 ISV
C19 IGV
......
......
6
5
4
3
2
1 2 3 4 ...... 125 126 127 128
......
SSA A3, B3
OS A4, B4
OD A5, B5
C17 P2BV
C16 P1AV
C15 P2AV
C14 TG
C12
RD
C11 SSA
C10 OS
C9 OD
OG A6, B6
SG A7, B7
C18 P1BV
C13 RG
S6
S5
S4
S3
S2
S1
RD A2, B2
......
1536
1535
1534
1533
1532
1531
TG A20, B20
RG A1, B1
S1536
S1535
S1534
S1533
S1532
S1531
P2AV A19, B19
1531
1532
1533
1534
1535
1536
P1AV A18, B18
S1531
S1532
S1533
S1534
S1535
S1536
P2BV A17, B17
1 2 3 4 ...... 125 126 127 128
2
3
4
5
6
P1BV A16, B16
S1
S2
S3
S4
S5
S6
ISV A14, B14
IGV A15, B15
A8, B8
P2AH
A9, B9
P1AH
A10, B10
SSD
A11, B11
P2BH
A12, B12 A13, B13
P1BH IGH
C1
C2
IGH P1BH
S1, ... , S1536: ACTIVE ELEMENTS
C3
P2BH
C4
SSD
C5
P1AH
C6
P2AH
C8
OG
C7
SG
S1, ... , S1536: ACTIVE ELEMENTS
KMPDC0143EA
Pixel format
Blank
0
Optical black
0
← Left Horizontal Direction → Right
Isolation
Effective
Isolation
0
1536
0
Optical black
0
Blank
0
Top ← Horizontal Direction → Right
Isolation
Effective
Isolation
0
128
0
Timing chart (TDI operation)
Tpwv
P1AV, P1BV
P2AV, P2BV
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
Enlarged view
Tovr
Tpwh, Tpws
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
Tpwr
OS
S1
S2
S3
S4
S5
S1535
S1536
KMPDC0142EB
4
TDI-CCD area image sensor
S8658-01/-01F
Timing chart (TDI operation, 2 × 2 pixel binning)
Tpwv
P1AV, P1BV
P2AV, P2BV
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
Enlarged view
Tovr
Tpwh, Tpws
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
Tpwr
OS
S1 + S2
S3 + S4
S1535 + S1536
KMPDC0111EC
Parameter
Pulse width
P1AV, P1BV, P2AV, P2BV, TG
Rise and fall times
Pulse width
P1AH, P1BH, P2AH, P2BH
Rise and fall times
Duty ratio
Pulse width
SG
Rise and fall times
Duty ratio
Pulse width
RG
Rise and fall times
TG-P1AH, P1BH
Overlap time
Symbol
tpwv
tprv, tpfv
tpwh
tprh, tpfh
tpws
tprs, tpfs
tpwr
tprr, tpfr
tovr
Remark
*16 *17
*17
Min.
30
200
125
10
125
10
10
5
10
Typ.
60
250
50
250
50
50
20
Max.
-
Unit
μs
ns
ns
ns
%
ns
ns
%
ns
ns
μs
*16: TG terminal can be short-circuited to P2AV terminal.
*17: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
5
TDI-CCD area image sensor
S8658-01/-01F
Dimensional outline (unit: mm)
S8658-01
X-ray
photosensitive area 220.0 (H) × 6.0 (V)
5.6
FOP
228.0 ± 0.3
FOP
3.0
A20 ← A14
28.0 ± 0.3
TDI direction
60.96 ± 0.2
B20
*1
Left chip
→
A1
15.24 ± 0.2
A13
45.72 ± 0.2
←
60.96 ± 0.2
1.6
C20 ← C14
B14
*2
Center chip
Right chip
B1 →
B13
30.48 ± 0.2
45.72 ± 0.2
C1 →
25.4
FOP
7.2 ± 0.2
223.0 ± 0.5
C13
3.4
Scintillator
0.45 ± 0.1
Center chip
Center chip
Edge pixel
Edge pixel
Dead space 1
250 μm min.
350 μm max.
Dead space 2
130 μm min.
200 μm max.
±50 μm max.
Left chip
*2 details
±50 μm max.
*1 details
2.54 ± 0.1
Right chip
Tolerance (unless otherwise noted)
<1 mm : ±0.2 mm
1≤ to <5 mm : ±0.5 mm
5mm ≤
: ±1.0 mm
KMPDA0149EF
6
TDI-CCD area image sensor
S8658-01/-01F
S8658-01F
5.2
FOP
228.0 ± 0.3
FOP
3.0
FOP
7.2 ± 0.2
223.0 ± 0.5
A20 ← A14
15.24 ± 0.2
B20
←
1.6
60.96 ± 0.2
C20 ← C14
B14
*1
*2
25.4
28.0 ± 0.3
TDI direction
60.96 ± 0.2
Left chip
A1
→
A13
45.72 ± 0.2
Center chip
Right chip
B1 →
B13
30.48 ± 0.2
45.72 ± 0.2
C1 →
C13
3.4
0.45 ± 0.1
Center chip
Center chip
Edge pixel
Edge pixel
Dead space 1
250 μm min.
350 μm max.
Dead space 2
130 μm min.
200 μm max.
±50 μm max.
Left chip
*2 details
±50 μm max.
*1 details
2.54 ± 0.1
Right chip
Tolerance (unless otherwise noted)
<1 mm : ±0.2 mm
1≤ to <5 mm : ±0.5 mm
5 mm ≤
: ±1.0 mm
KMPDA0288EC
7
TDI-CCD area image sensor
S8658-01/-01F
Pin connections
Pin no.
A1, B1
A2, B2
A3, B3
A4, B4
A5, B5
A6, B6
A7, B7
A8, B8
A9, B9
A10, B10
A11, B11
A12, B12
A13, B13
A14, B14
A15, B15
A16, B16
A17, B17
A18, B18
A19, B19
A20, B20
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C16
C17
C18
C19
C20
Symbol
RG
RD
SSA
OS
OD
OG
SG
P2AH
P1AH
SSD
P2BH
P1BH
IGH
ISV
IGV
P1BV
P2BV
P1AV
P2AV
TG
IGH
P1BH
P2BH
SSD
P1AH
P2AH
SG
OG
OD
OS
SSA
RD
RG
TG
P2AV
P1AV
P2BV
P1BV
IGV
ISV
Description
Reset gate
Reset drain
Analog ground
Output transistor source
Output transistor drain
Output gate
Summing gate
CCD horizontal register clock A-2
CCD horizontal register clock A-1
Digital ground
CCD horizontal register clock B-2
CCD horizontal register clock B-1
Test point (horizontal input gate)
Test point (vertical input source)
Test point (vertical input gate)
CCD vertical register clock B-1
CCD vertical register clock B-2
CCD vertical register clock A-1
CCD vertical register clock A-2
Transfer gate
Test point (horizontal input gate)
CCD horizontal register clock B-1
CCD horizontal register clock B-2
Digital ground
CCD horizontal register clock A-1
CCD horizontal register clock A-2
Summing gate
Output gate
Output transistor drain
Output transistor source
Analog ground
Reset drain
Reset gate
Transfer gate
CCD vertical register clock A-2
CCD vertical register clock A-1
CCD vertical register clock B-2
CCD vertical register clock B-1
Test point (vertical input gate)
Test Point (vertical input source)
Remark
Same timing as P2AH
Same timing as P1AH
Shorted to RD
Same timing as P1AV
Same timing as P2AV
Same timing as P1AH
Same timing as P2AH
Same timing as P2AV
Same timing as P1AV
Shorted to RD
8
TDI-CCD area image sensor
S8658-01/-01F
Precautions (electrostatic countermeasures)
∙ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use an anti-static wrist band,
in order to prevent electrostatic damage due to electrical charges from friction.
∙ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
∙ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
∙ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Take these measures as needed to prevent electrostatic
damage to the sensor.
Information described in this material is current as of December, 2013.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1078E10 Dec. 2013 DN
9
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