datasheet

SK80GM063
' ( )* +, Absolute Maximum Ratings
Symbol Conditions
IGBT
-."
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#
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#78
IGBT Module
SK80GM063
122
-
43
5
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5
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5
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-
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32
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5
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6*
5
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Units
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-9."
SEMITOP® 2
Values
Inverse Diode
#@
'/ ( 3*2 +
[email protected]
[email protected]( ) #@
#@"8
( 32 < $
5
'/ ( 3*2 +
442
5
Module
#78"
Preliminary Data
5
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Features
! Typical Applications*
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5, 3 C
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+
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+
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' ( )* +, Characteristics
Symbol Conditions
IGBT
-9.
AB2 CCC D3*2
min.
typ.
max.
B,*
*,*
1,*
-
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5
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5
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Units
I
I
2,1
JKL
GM
1
13-02-2007 DIL
© by SEMIKRON
SK80GM063
Characteristics
Symbol Conditions
Inverse Diode
-@ ( -.
SEMITOP® 2
IGBT Module
#@ ( 12 5< -9. ( 2 -
min.
'/ ( )* +
$C
typ.
max.
Units
3,;
3,*
-
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$C
3,)
3,B*
-
[email protected]
'/ ( 3)* +
2,4*
2,E
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8
M 83
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SK80GM063
Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
! Typical Applications*
"
#$
"
%&"
GM
2
13-02-2007 DIL
© by SEMIKRON
SK80GM063
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
13-02-2007 DIL
© by SEMIKRON
SK80GM063
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
13-02-2007 DIL
© by SEMIKRON
SK80GM063
UL recognized file
no. E 63 532
';* " , &, O )
' ;*
5
98
13-02-2007 DIL
© by SEMIKRON