datasheet

SK30GBB066T
) 0- 1, 2 Absolute Maximum Ratings
Symbol Conditions
IGBT
(34
:;
5 ) 0- 1
5 ) /8- 1
:;)
0
7++
(
9+
#
) 8+ 1
*/
#
7+
#
< 0+
(
5 ) /-+ 1
7
@
) 0- 1
*7
#
) 8+ 1
0A
#
7+
#
/7+
#
( ) *7+ (= (!3 > 0+ (=
(34 ? 7++ (
Units
) 0- 1
(!34
SEMITOP® 3
Values
Inverse Diode
IGBT Module
%
%:;
SK30GBB066T
%4;
5 ) /8- 1
%:;)
0
%
) /+ = 2B
5 ) /-+ 1
Module
#
:;4
Target Data
B5
Features
! "
#$ " %&
' (
#, / D
34
(!3 ) (3,
) +,9* #
(!3 ) + (, (3 ) (34
1
C9+ DDD E/0-
1
0-++
(
) 0- 1, 2 Characteristics
Symbol Conditions
IGBT
(!3
C9+ DDD E/8-
min.
typ.
-
-,A
5 ) 0- 1
max.
7,-
(
+,++/7
#
5 ) /0- 1
!34
(3 ) + (, (!3 ) 0+ (
#
5 ) 0- 1
*++
5 ) /0- 1
Typical Applications*
(3+
Remarks
( ) *+++( #,-+.,/
3
(3
5 ) 0- 1
3
#
+,F
/,/
(
+,A
/
(
5 ) 0-1
/A,*
0-
G
5 ) /-+1
0A
*-
G
5 ) 0-1
BD
/,9-
/,A-
(
5 ) /0-1
BD
/,7-
0,+-
) / ;.
/,7*
+,//
%
%
+,+-
%
(!3)C8(DDDE/-(
08-
:! ) 0- G
I ) 0**- #I@
:! ) 0- G
I ) 0**- #I@
09
08
+,F8
*0A
-9
J
/,88
J
/,7-
KI&
) *+ #, (!3 ) /- (
(3 ) 0-, (!3 ) + (
3
:5C
#
5 ) /-+ 1
(!3 ) /- (
H!
Units
!
( ) *++(
) *+#
5 ) /-+ 1
(!3) C8IE/-(
(
GBB-T
1
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
Characteristics
Symbol Conditions
Inverse Diode
(% ) (3
%
) *+ #= (!3 ) + (
(%+
%
®
SEMITOP 3
IGBT Module
SK30GBB066T
min.
typ.
max.
Units
5 ) 0- 1
BD
/,9-
/,8
(
5 ) /-+ 1
BD
/,9-
/,8
(
5 ) 0- 1
/
/,/
(
5 ) /-+ 1
+,F
/
(
5 ) 0- 1
/-
0+
G
5 ) /-+ 1
/A
0*,*
G
5 ) /-+ 1
*+
/,7
#
@
H
% ) *+ #
I ) 0**- #I@
3
() *++(
+,07
J
:5C
0,/
KI&
;
L
::;
2
0,0-
0,-
'
*+
9F*<-M
G
Temperature sensor
:/++
)/++1 :0-)-LG
Target Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
! "
#$ " %&
' component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
Remarks
( ) *+++( #,-+.,/
GBB-T
2
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
FA 4 , N, O 0
FA
5
!C
03-06-2009 DIL
© by SEMIKRON