DATASHEET

HA-5112/883
®
October 2004
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1-88
Dual, Low Noise, High Performance
Uncompensated Operational Amplifier
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Noise and high performance are key words describing
the dual, uncompensated HA-5112/883. This general purpose amplifier offers an array of dynamic specifications
including 12V/µs slew rate (min), and 54MHz gain-bandwidth-product for AVCL ≥ 10. Complementing these outstanding parameters is a very low noise specification of 6nV/√Hz
at 1kHz (max).
• Low Input Noise Voltage Density at 1kHz. . . 6nV/√Hz(Max)
4.3nV/√Hz(Typ)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . .12V/µs (Min)
20V/µs (Typ)
Fabricated using the Intersil standard high frequency D.I.
process, these operational amplifiers also offer excellent
input specifications such as 2.5mV (max) offset voltage and
75nA (max) offset current. Complementing these specifications are 100dB (min) open loop gain and 55dB channel separation (min). The HA-5112/883 also consumes a very
modest amount of supply power (180mW/package).
• Wide Gain Bandwidth Product (AVCL ≥ 10) . . . . 54MHz
• Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/oC (Typ)
• High Open Loop Gain (Full Temp.). . . . . 100kV/V (Min)
250kV/V (Typ)
• High CMRR/PSRR (Full Temp.). . . . . . . . . . . 86dB (Min)
100dB
(Typ)
This impressive combination of features make this amplifier
ideally suited for designs ranging from audio amplifiers and
active filters to the most demanding signal conditioning and
instrumentation circuits.
• Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/oC (Typ)
• No Crossover Distortion
Part Number Information
• Standard Dual Pinout
PART
NUMBER
Applications
• High Quality Audio Preamplifiers
HA2-5112/883
TEMPERATURE
RANGE
-55oC to +125oC
PACKAGE
8 Pin Can
• High Q Active Filters
• Low Noise Function Generators
• Low Distortion Oscillators
• Low Noise Comparators
Pinout
HA-5112/883
(METAL CAN)
TOP VIEW
V+
8
OUT1
7
1
1
-IN1
- +
2
+IN1
OUT2
2
+ -
6
-IN2
5 +IN2
3
4
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
1
Spec Number
511032-883
FN3711.2
HA-5112/883
Absolute Maximum Ratings
Thermal Information
Voltage between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
(One Amplifier Shorted to Ground)
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 70oC/W
Package Power Dissipation Limit at +75oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 2kΩ
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset Voltage
SYMBOL
VIO
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-2.0
2.0
mV
-2.5
2.5
mV
-200
200
nA
-325
325
nA
-200
200
nA
VCM = 0V
2, 3
Input Bias Current
+IB
-IB
Input Offset Current
Common Mode Range
IIO
+CMR
VCM = 0V, +RS = 10kΩ,
-RS = 100Ω
1
2, 3
VCM = 0V, +RS = 100Ω,
-RS = 10kΩ
VCM = 0V,
+RS = 10kΩ,
-RS = 10kΩ
+AVOL
-AVOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
325
nA
1
-75
75
nA
-125
125
nA
+12
-
V
+12
-
V
-
-12
V
-
-12
V
100
-
kV/V
100
-
kV/V
100
-
kV/V
100
-
kV/V
86
-
dB
86
-
dB
86
-
dB
86
-
dB
4
5, 6
1
2, 3
∆VCM = -5V,
V+ = +20V, V- = -10V,
VOUT = +5V
oC
-325
5, 6
∆VCM = +5V,
V+ = +10V, V- = -20V,
VOUT = -5V
-55oC
+25oC
4
VOUT = 0V and -10V,
RL = 2kΩ
+125oC,
+125 C, -55 C
1
VOUT = 0V and +10V,
RL = 2kΩ
+25 C
2, 3
2, 3
Large Signal Voltage
Gain
o
o
1
V+ = +27V, V- = -3V
-55oC
+25
2, 3
V+ = +3V, V- = -27V
+125oC,
1
2, 3
-CMR
LIMITS
GROUP A
SUBGROUPS
1
2, 3
o
+125oC,
-55oC
+25oC
+125oC,
-55oC
o
+25 C
+125oC,
-55oC
o
+25 C
o
o
+125 C, -55 C
+25
+125o
oC
o
C, -55 C
o
+25 C
+125
oC,
-55oC
+25oC
+125
oC,
-55oC
Spec Number
2
511032-883
HA-5112/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Output Voltage Swing
SYMBOL
+VOUT1
-VOUT1
+VOUT2
-VOUT2
Output Current
+IOUT
-IOUT
Quiescent Power Supply
Current
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
1
+25oC
12
-
V
2, 3
+125oC, -55oC
12
-
V
1
+25oC
-
-12
V
2, 3
+125oC, -55oC
-
-12
V
1
+25oC
10
-
mA
2, 3
+125oC, -55oC
10
-
mA
1
+25oC
-
-10
mA
2, 3
+125oC, -55oC
-
-10
mA
1
+25oC
-
5
mA
2, 3
+125oC, -55oC
-
6
mA
1
+25oC
-5
-
mA
2, 3
+125oC, -55oC
-6
-
mA
1
+25oC
86
-
dB
2, 3
+125oC, -55oC
86
-
dB
1
+25oC
86
-
dB
2, 3
+125oC, -55oC
86
-
dB
MIN
MAX
UNITS
RL = 2kΩ
RL = 2kΩ
RL = 10kΩ
RL = 10kΩ
VOUT = -5V
VOUT = +5V
+ICC
VOUT = 0V, IOUT = 0mA
-ICC
Power Supply
Rejection Ratio
CONDITIONS
VOUT = 0V, IOUT = 0mA
+PSRR
-PSRR
LIMITS
GROUP A
SUBGROUPS
∆VSUP = 10V,
V+ = +10V, V- = -15V
V+ = +20V, V- = -15V
∆VSUP = 10V,
V+ = +15V, V- = -10V
V+ = +15V, V- = -20V
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Parameters in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = 10V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
o
Differential Input
Resistance
RIN
VCM = 0V
1
+25 C
250
-
kΩ
Input Noise Voltage
EN
RS = 20Ω,
fO = 1000Hz
1
+25oC
-
6
nV/√Hz
Input Noise Current
IN
RS = 2MΩ,
fO = 1000Hz
1
+25oC
-
3
pA/√Hz
GBWP
VO = 200mV,
fO = 50kHz
1
+25oC
40
-
MHz
VO = 200mV,
fO = 1MHz
1
+25oC
54
-
MHz
Gain Bandwidth Product
Spec Number
3
511032-883
HA-5112/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = 10V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Slew Rate
Full Power Bandwidth
Rise and Fall Time
Output Resistance
TEMPERATURE
MIN
MAX
UNITS
+SR
VOUT = -5V to +5V
1
12
-
V/µs
-SR
VOUT = +5V to -5V
1
+25oC
12
-
V/µs
1, 2
+25oC
191
-
kHz
10
-
V/V
VPEAK = 10V
CLSG
RL = 2kΩ, CL = 50pF
1
tR
VOUT = 0V to +200mV
1, 4
tF
Overshoot
NOTES
+25oC
FPBW
Minimum Closed Loop
Stable Gain
CONDITIONS
VOUT = 0V to -200mV
-55oC
to
+125oC
+25oC
1, 4
-
100
ns
o
-
100
ns
o
+25 C
+OS
VOUT = 0V to +200mV
1
+25 C
-
40
%
-OS
VOUT = OV to -200mV
1
+25oC
-
40
%
-
232
Ω
ROUT
Open Loop
Quiescent Power
Consumption
PC
VOUT = 0V, IOUT =
0mA
Channel Separation
CS
RS = 1kΩ,
AVCL = 100V/V,
VIN = 100mVPEAK at
10kHz, Referred to
Input
o
1
+25 C
o
o
1, 3
-55 C to +125 C
-
180
mW
1
+25oC
55
-
dB
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6
Group A Test Requirements
1, 2, 3, 4, 5, 6
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
4
511032-883
HA-5112/883
Die Characteristics
DIE DIMENSIONS:
98.4 x 67.3 x 19 mils ± 1 mils
2500 x 1710 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
1.43 x 105A/cm2 at 10mA
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT: 93
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5112/883
V-
+IN2
+IN1
-IN1
-IN2
OUT2
OUT1
V+
Spec Number
5
511032-883
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