DATASHEET

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November 2004
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HA-5177/883
Ultra Low Offset Voltage Operational Amplifier
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-5177/883 is a monolithic, all bipolar, precision operational amplifier, utilizing Intersil Dielectric Isolation and
advance processing techniques. This design features a combination of precision input characteristics, wide gain bandwidth (2MHz) and high speed (0.5V/µs min) and is an
improved version of the HA-5135/883.
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .60µV (Max)
10µV (Typ)
• Low Offset Voltage Drift . . . . . . . . . . . . 0.6µV/oC (Max)
0.1µV/oC (Typ)
The HA-5177/883 uses advanced matching techniques and
laser trimming to produce low offset voltage (10µV typ, 60µV
max) and low offset voltage drift (0.1µV/oC typ, 0.6µV/oC
max). This design also features low voltage noise (9nV/√Hz
typ), Low current noise (0.32pA/√Hz typ), nanoamp input
currents, and 126dB minimum gain.
• High Voltage Gain . . . . . . . . . . . . . . . . . . . . 126dB (Min)
150dB (Typ)
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min)
140dB (Typ)
These outstanding features along with high CMRR (140dB
typ, 110dB min) and high PSRR (135dB typ, 110dB min)
make this unity gain stable amplifier ideal for high resolution
data acquisition systems, precision integrators, and low level
transducer amplifiers.
• High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min)
135dB (Typ)
• Low Noise . . . . . . . . . . . . . . . . . . . . . . . . 11nV/√Hz (Max)
9nV/√Hz (Typ)
• Low Power Consumption . . . . . . . . . . . . . .51mW (Max)
Part Number Information
• Wide Gain Bandwidth Product . . . . . . . . . . .2MHz (Min)
• Unity Gain Stable
PART
NUMBER
Applications
HA4-5177/883
TEMPERATURE
RANGE
-55oC to +125oC
PACKAGE
20 Lead Ceramic LCC
• High Gain Instrumentation Amplifiers
• Precision Control Systems
• Precision Integrators
• High Resolution Data Converters
• Precision Threshold Detectors
• Low Level Transducer Amplifiers
Pinout
NC
4
-IN
5
NC
6
+IN
7
NC
8
2
NC
BAL 2
3
NC
BAL1
NC
HA-5177/883
(CLCC)
TOP VIEW
1 20 19
18 NC
17 V+
-
16 NC
+
15 OUT
14 NC
NC
NC
NC
V-
NC
9 10 11 12 13
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002, 2004. All Rights Reserved
1
Spec Number
511041-883
FN3733.3
HA-5177/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V
Differential Input Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VInput Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
Ceramic LCC Package . . . . . . . . . . . . . .
80oC/W
28oC/W
Package Power Dissipation Limit at +75oC for TJ ≤ +175oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Package Power Dissipation Derating Factor Above +75oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 600Ω
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset Voltage
Input Bias Current
SYMBOL
VIO
IB
CONDITIONS
TEMPERATURE
1
+25oC
-60
60
µV
2, 3
+125oC, -55oC
-100
100
µV
1
+25oC
-6
6
nA
2, 3
+125oC, -55oC
-8
8
nA
1
+25oC
-6
6
nA
2, 3
+125oC, -55oC
-8
8
nA
1
+25oC
12
-
V
12
-
V
-
-12
V
VCM = 0V
VCM = 0V,
RS = 10kΩ, 50Ω
LIMITS
GROUP A
SUBGROUPS
MIN
MAX
UNITS
+I B + – I B
 ----------------------------


2
Input Offset Current
Common Mode
Range
IIO
+CMR
VCM = 0V,
+RS = 10kΩ,
-RS = 10kΩ
V+ = +3V, V- = -27V
2, 3
-CMR
V+ = +27V, V- = -3V
1
+AVOL
-AVOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Output Voltage
Swing
+VOUT1
VOUT = 0V and +10V,
RL = 2kΩ
VOUT = 0V and -10V,
RL = 2kΩ
∆VCM = 10V,
V+ = +5V, V- = - 25V,
VOUT = -10
∆VCM = 10V,
V+ = +25V, V- = - 5V,
VOUT = +10
+25oC
oC,
-55oC
-
-12
V
+25oC
126
-
dB
5, 6
+125oC, -55oC
120
-
dB
4
+25oC
126
-
dB
120
-
dB
116
-
dB
110
-
dB
5, 6
1
+125
oC,
+125
-55oC
+25oC
o
o
2, 3
+125 C, -55 C
1
+25oC
116
-
dB
2, 3
+125oC, -55oC
110
-
dB
4
+25oC
12
-
V
12
-
V
-
-12
V
RL = 2kΩ
5, 6
-VOUT1
-55oC
4
2, 3
Large Signal Voltage
Gain
+125
oC,
RL = 2kΩ
4
+125
oC,
-55oC
+25oC
o
o
5, 6
+125 C, -55 C
-
-12
V
+VOUT2
RL = 600Ω
4
+25oC
10
-
V
-VOUT2
RL = 600Ω
4
+25oC
-
-10
V
Spec Number
2
511041-883
HA-5177/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Output Current
SYMBOL
+IOUT
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
4
+25oC
15
-
mA
VOUT = -10V
VOUT = 0V, IOUT =
0mA
+ICC
VOUT = 0V, IOUT =
0mA
-ICC
Power Supply
Rejection Ratio
∆VSUP = 15V,
V+ = +5V, V- = - 15V,
V+ = +20V, V- = - 15V
+PSRR
∆VSUP = 15V,
V+ = +15V, V- = - 5V,
V+ = +15V, V- = - 20V
-PSRR
Offset Voltage
Adjustment
+VIOAdj
+125 C, -55 C
15
-
mA
+25oC
-
-15
mA
oC,
-55oC
-
-15
mA
-
1.7
mA
+125oC, -55oC
-
1.7
mA
+25oC
-1.7
-
mA
+125
1
+25oC
2, 3
1
o
o
2, 3
+125 C, -55 C
-1.7
-
mA
1
+25oC
110
-
dB
110
-
dB
2, 3
oC,
+125
-55oC
1
+25oC
110
-
dB
2, 3
+125oC, -55oC
110
-
dB
1
+25oC
0.3
-
mV
Note 2
-VIOAdj
o
4
5, 6
Quiescent Power
Supply Current
o
5, 6
VOUT = +10V
-IOUT
LIMITS
GROUP A
SUBGROUPS
o
o
2, 3
+125 C, -55 C
0.3
-
mV
1
+25oC
-
-0.3
mV
2, 3
+125oC, -55oC
-
-0.3
mV
Note 2
NOTES:
1. The input stage has series 500Ω resistors along with back to back diodes. This provides large differential input voltage protection for a
slight increase in noise voltage.
2. This test is for functionality only to assure adjustment through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified.
PARAMETERS
Slew Rate
Rise and Fall Time
Overshoot
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
oC
0.5
-
V/µs
+SR
VOUT = -3V to +3V,
VIN S.R. ≤ 25V/µs
7
+25
-SR
VOUT = +3V to -3V,
VIN S.R. ≤ 25V/µs
7
+25oC
0.5
-
V/µs
tR
VOUT = 0 to +200mV
10% ≤ TR ≤ 90%
7
+25oC
-
420
ns
tF
VOUT = 0 to -200mV
10% ≤ TF ≤ 90%
7
+25oC
-
420
ns
+OS
VOUT = 0 to +200mV
7
+25oC
-
40
%
-OS
VOUT = 0 to -200mV
7
+25oC
-
40
%
Spec Number
3
511041-883
HA-5177/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified.
LIMITS
NOTES
TEMPERATURE
MIN
MAX
UNITS
Average Offset Voltage
Drift
PARAMETERS
SYMBOL
VIOTC
VCM = 0V
1
-55oC to +125oC
-
0.6
µV/oC
Average Offset Current
Drift
IIOTC
Versus Temperature
1
-55oC to +125oC
-
40
pA/oC
Average Bias Current Drift
IRTC
Versus Temperature
1
-55oC to +125oC
-
40
pA/oC
VCM = 0V
1
+25oC
20
-
MΩ
Differential Input
Resistance
RIN
CONDITIONS
Low Frequency
Peak-to-Peak Noise Voltage
ENP-P
0.1Hz to 10Hz
1
+25oC
-
0.6
µVP-P
Low Frequency
Peak-to-Peak Noise Current
INP-P
0.1Hz to 10Hz
1
+25oC
-
45
pAP-P
RS = 20Ω, fO = 10Hz
1
+25oC
-
18
nV/√Hz
RS = 20Ω, fO = 100Hz
1
+25oC
-
13
nV/√Hz
RS = 20Ω, fO = 1kHz
1
+25oC
-
11
nV/√Hz
RS = 2MΩ, fO = 10Hz
1
+25oC
-
4
pA/√Hz
RS = 2MΩ, fO = 100Hz
1
+25oC
-
2.3
pA/√Hz
RS = 2MΩ, fO = 1kHz
1
+25oC
-
1
pA/√Hz
1
oC
2
-
MHz
Input Noise Voltage
Density
EN
Input Noise Current
Density
IN
Gain Bandwidth Product
GBWP
VO = 100mV,
1Hz ≤ fO ≤ 100kHz
Full Power Bandwidth
FPBW
VPEAK = 10V
Minimum Closed Loop
Stable Gain
CLSG
Settling Time
tS
Output Resistance
ROUT
Power Consumption
PC
1, 2
RL = 2kΩ, CL = 50pF
1
To 0.1% for a 10V Step
1
Open Loop
VOUT = 0V, IOUT =
0mA
+25
+25oC
-55oC
to +125oC
8
-
kHz
+1
-
V/V
-
15
µs
+25oC
1
+25 C
-
70
Ω
1, 3
-55oC to +125oC
-
51
mW
o
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6, 7
Group A Test Requirements
1, 2, 3, 4, 5, 6, 7
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
4
511041-883
HA-5177/883
Die Characteristics
DIE DIMENSIONS:
72 x 103 x 19 mils ± 1 mils
1840 x 2620 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
6.0 x 104A/cm2
SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 71
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5177/883
BAL1
V+
OUT
NC
BAL2
-IN
+IN
V-
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Spec Number
5
511041-883
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