DATASHEET

HA-5222/883
TM
PRODUCT
OBSO LETE
RODUCT
BSTITUTE P
POSSIBLE SU or HA7-5142-2
HA7-51 02-2
Dual, Low Noise, Wideband,
Precision Operational Amplifier
September 2001
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Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-5222/883 is a dual, high performance, dielectrically
isolated, monolithic op amp, featuring precision DC characteristics while providing excellent AC characteristics.
Designed for audio, video, and other demanding applications, noise (3.3nV/√Hz at 1kHz typ), total harmonic distortion (<0.005% typ), and DC errors are kept to a minimum.
• Gain Bandwidth Product . . . . . . . . . . . . . .100MHz (Min)
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . .30MHz (Min)
40MHz (Typ)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . .25V/µs (Min)
37V/µs (Typ)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . .0.75mV (Max)
0.30mV (Typ)
• High Open Loop Gain . . . . . . . . . . . . . . . . . 106dB (Min)
128dB (Typ)
• Channel Separation (at 10kHz) . . . . . . . . . . 110dB (Typ)
• Low Voltage Noise (at 1kHz) . . . . . . . . .5.9nV/√Hz (Max)
3.3nV/√Hz (Typ)
• Low Current Noise (at 1kHz) . . . . . . . . 2.7pA/√Hz (Max)
1.3pA/√Hz (Typ)
• High Output Current . . . . . . . . . . . . . . . . . ±30mA (Min)
±56mA (Typ)
• Low Supply Current (per Op Amp.) . . . . . . 10mA (Max)
8mA (Typ)
The precision performance is shown by low offset voltage
(0.3mV typ), low bias currents (40nA typ), low offset currents (15nA typ), and high open loop gain (128dB typ). The
combination of these excellent DC characteristics with fast
settling time (0.4µs typ) make the HA-5222/883 ideally
suited for precision signal conditioning.
The unique design of the HA-5222/883 gives this device outstanding AC characteristics, including high unity gain bandwidth (40MHz typ) and high slew rate (37V/µs typ), not
normally associated with precision op amps. Other key specifications include high CMRR (95dB typ) and high PSRR
(100dB typ). The combination of these specifications will
allow the HA-5222/883 to be used in RF signal conditioning
as well as video amplifiers.
Part Number Information
PART
NUMBER
Applications
• Precision Test Systems
HA7-5222/883
TEMPERATURE
RANGE
-55oC to +125oC
PACKAGE
8 Lead CerDIP
• Active Filtering
• Small Signal Video
• Accurate Signal Processing
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• RF Signal Conditioning
Pinout
HA-5222/883
(CERDIP)
TOP VIEW
OUT1
1
-IN1
2
+IN1
V-
3
4
1
+
2
+
8
V+
7
OUT2
6
-IN2
5
+IN2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001, All Rights Reserved
1
511062-883
File Number 3717.2
Spec Number
Specifications HA-5222/883
Absolute Maximum Ratings
Thermal Information (Typical)
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (Pulsed at 1ms, 10% Duty Cycle). . . . . 100mA
Continuous Output Current. . . . . . . . . . . . . . Short Circuit Protected
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
θJC
Thermal Resistance
θJA
CerDIP Package . . . . . . . . . . . . . . . . . . .
96oC/W
16oC/W
Package Power Dissipation Limit at +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.04W
Package Power Dissipation Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.4mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 1kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, R LOAD = 1kΩ, V OUT = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset Voltage
SYMBOL
VIO
CONDITIONS
GROUP A
SUBGROUPS
VCM = 0V
1
2, 3
Input Bias Current
+IB
-IB
Input Offset Current
Common Mode Range
IIO
+CMR
1
VCM = 0V,
+RS = 100.1kΩ,
-RS = 100Ω
VCM = 0V, +RS = 100Ω,
-RS = 100.1kΩ
+AVOL
-AVOL
+CMRR
-CMRR
Output Voltage Swing
+VOUT
80
nA
nA
-50
50
nA
-150
150
nA
12
-
V
12
-
V
-
-12
V
-
-12
V
106
-
dB
o
o
+125 C, -55 C
+25o
+125oC,
C
-55oC
+25oC
+125oC,
-55oC
o
+25 C
+125o
o
C, -55 C
+25oC
o
o
5, 6
+125 C, -55 C
100
-
dB
4
+25oC
106
-
dB
100
-
dB
88
-
dB
86
-
dB
88
-
dB
86
-
dB
12.0
-
V
11.5
-
V
-
-12.0
V
-
-11.5
V
1
2, 3
4
RL = 1kΩ
-80
200
5, 6
-V OUT
mV
-200
2, 3
RL = 1kΩ
1.5
nA
1
∆VCM = -10V,
V+ = +25V, V- = -5V,
VOUT = +10V
o
-1.5
80
4
∆VCM = +10V,
V+ = +5V, V- = -25V,
VOUT = -10V
o
mV
-80
5, 6
Common Mode
Rejection Ratio
+25oC
0.75
+25oC
1
VOUT = 0V and -10V
C, -55 C
-0.75
1
1
VOUT = 0V and +10V
o
UNITS
nA
2, 3
Large Signal Voltage
Gain
+125o
MAX
200
2, 3
V+ = +27V, V- = -3V
+25 C
MIN
-200
2, 3
-CMR
o
+125 C, -55 C
1
V+ = +3V, V- = -27V
TEMPERATURE
2, 3
2, 3
VCM = 0V,
+RS = 100.1kΩ,
-RS = 100.1kΩ
LIMITS
4
5, 6
+125oC,
-55oC
o
+25 C
+125oC,
-55oC
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
+25oC
o
o
+125 C, -55 C
Spec Number
2
511062-883
Specifications HA-5222/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, R LOAD = 1kΩ, V OUT = 0V, Unless Otherwise Specified.
PARAMETERS
Output Current
SYMBOL
CONDITIONS
+IOUT
VOUT = +10V, RL = 1kΩ
4
+25oC
30
-
mA
5, 6
+125oC, -55oC
30
-
mA
4
+25oC
-
-30
mA
5, 6
+125oC, -55oC
-
-30
mA
1
+25oC
-
20
mA
2, 3
+125oC, -55oC
-
22
mA
1
+25oC
-20
-
mA
2, 3
+125oC, -55oC
-22
-
mA
1
+25oC
90
-
dB
2, 3
+125oC, -55oC
86
-
dB
1
+25oC
90
-
dB
2, 3
+125oC, -55oC
86
-
dB
-IOUT
Quiescent Power Supply
Current
VOUT = -10V, RL = 1kΩ
+ICC
VOUT = 0V, IOUT = 0mA
VOUT = 0V, IOUT = 0mA
-ICC
Power Supply
Rejection Ratio
LIMITS
GROUP A
SUBGROUPS
+PSRR
-PSRR
∆VSUP = 10V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
∆VSUP = 10V,
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
TEMPERATURE
MIN
MAX
UNITS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC
Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, Unless Otherwise Specified.
LIMITS
PARAMETERS
Input Noise Voltage
Density
Input Noise Current
Density
Gain Bandwidth Product
Unity Gain Bandwidth
Slew Rate
Full Power Bandwidth
SYMBOL
EN
IN
GBWP
UGBW
±SR
FPBW
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
RS = 0Ω, fO = 10Hz
1, 5
+25oC
-
16.0
nV/√Hz
RS = 0Ω, fO = 100Hz
1, 5
+25oC
-
6.6
nV/√Hz
RS = 0Ω, fO = 1kHz
1, 5
+25oC
-
5.9
nV/√Hz
RS = 500kΩ, fO = 10Hz
1, 5
+25oC
-
24.0
pA/√Hz
RS = 500kΩ, fO = 100Hz
1, 5
+25oC
-
6.6
pA/√Hz
RS = 500kΩ, fO = 1kHz
1, 5
+25oC
-
2.7
pA/√Hz
1
+25oC
100
-
MHz
-55oC to +125oC
88
-
MHz
+25oC
30
-
MHz
-55oC to +125oC
25
-
MHz
1
-55oC to +125oC
25
-
V/µs
1, 2
-55oC to +125oC
398
-
kHz
VOUT = 200mVP-P,
fO = 100kHz
VOUT = 200mV
1
VOUT = ±2.5V,
CL = 50pF
VPEAK = 10V
Spec Number
3
511062-883
Specifications HA-5222/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC (Continued)
Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Minimum Closed Loop
Stable Gain
CLSG
tR, tF
Rise and Fall Time
±OS
Overshoot
Power Consumption
PC
CONDITIONS
RL = 1kΩ, CL = 50pF
VOUT = ±100mV
VOUT = ±100mV
NOTES
TEMPERATURE
MIN
MAX
UNITS
1
-55oC to +125oC
1
-
V/V
1, 4
+25oC
-
20
ns
-55oC to +125oC
-
35
ns
+25oC
-
25
%
-55oC to +125oC
-
30
%
-55oC to +125oC
-
660
mW
1
VOUT = 0V, IOUT =
0mA
1, 3
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
5. Input Noise Voltage Density and Input Noise Current Density limits are based on characterization data.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6
Group A Test Requirements
1, 2, 3, 4, 5, 6
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
4
511062-883
HA-5222/883
Die Characteristics
DIE DIMENSIONS:
78 x 185 x 19 mils ± 1 mils
1980 x 4690 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
4.2 x 104A/cm 2
SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 128
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5222/883
OUT1
V+
-IN1
+IN1
VOUT2
-IN2
+IN2
Spec Number
5
511062-883
HA-5222
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application
and design information only. No guarantee is implied.
Typical Performance Curves
Unless Otherwise Specified: TA = +25oC, VSUPPLY = ±15V
SUPPLY CURRENT/AMPLIFIER vs TEMPERATURE
CHANNEL SEPARATION vs FREQUENCY
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: Supply Voltage = ±15V, R L = 1kΩ, C L = 50pF, Unless Otherwise Specified
PARAMETERS
Input Offset Voltage
CONDITIONS
TEMPERATURE
See Table 1
TYPICAL
UNITS
o
+25 C
0.30
mV
Full
0.35
mV
Average Offset Voltage Drift
See Table 1
Full
0.50
µV/oC
Input Bias Current
See Table 1
+25oC
40
nA
Full
70
nA
o
+25 C
15
nA
Full
30
nA
See Table 1
+25oC
70
kΩ
fO = 0.1Hz to 10Hz
+25oC
0.33
µVP-P
fO = 10Hz
+25oC
6.4
nV/√Hz
fO = 100Hz
+25oC
3.7
nV/√Hz
fO = 1kHz
+25oC
Input Offset Current
Differential Input Resistance
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
See Table 1
fO = 10Hz
3.3
nV/√Hz
o
8
pA/√Hz
o
+25 C
fO = 100Hz
+25 C
2.7
pA/√Hz
fO = 1kHz
+25oC
1.3
pA/√Hz
THD & N
See Note 1
+25oC
0.005
%
Large Signal Voltage Gain
VOUT = 0V to ±10V
+25oC
128
dB
Full
120
dB
Spec Number
6
511062-883
HA-5222
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application
and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: Supply Voltage = ±15V, R L = 1kΩ, C L = 50pF, Unless Otherwise Specified
PARAMETERS
CONDITIONS
Common Mode Rejection Ratio
∆VCM = ±10V
Unity Gain Bandwidth
-3dB
TEMPERATURE
TYPICAL
UNITS
Full
95
dB
+25oC
40
MHz
+125 C
33
MHz
-55oC
50
MHz
+25oC
140
MHz
+125oC
115
MHz
-55oC
160
MHz
Full
1
V/V
Full
110
V
+25oC
112.5
V
Full
112.1
V
Full
156
mA
+25oC
10
V
o
Gain Bandwidth Product
1kHz to 400kHz
Minimum Gain Stability
Output Voltage Swing
RL = 333Ω
RL = 1K
Output Current
VOUT = ±10V
Output Resistance
Full Power Bandwidth
FPBW = SR/2πVPEAK,
VPEAK = 10V
+25oC
398
kHz
Channel Separation
fO = 10kHz
+25oC
110
dB
Slew Rate
VOUT = ±2.5V
+25oC
37
V/µs
+125oC
39
V/µs
-55 C
36
V/µs
+25oC
16
ns
+125oC
17
ns
-55oC
17
ns
+25oC
12
%
+125oC
11
%
-55oC
12
%
o
Rise Time
Overshoot
Settling Time
VOUT = ±100mV
VOUT = ±100mV
10VSTEP, AV = -1
o
0.1%
+25 C
0.4
µs
0.01%
+25o
1.5
µs
C
Power Supply Rejection Ratio
∆VS = ±10V to ±20V
Full
100
dB
Supply Current
Quiescent, VOUT = 0V,
IOUT = 0mA
Full
8
mA/Op Amp
Minimum Supply Voltage
Functional Operation Only.
Other Parameters May Vary.
+25oC
15
V
NOTE:
1. AVCL = 10, fO = 1kHz, VOUT = 5Vrms, RL = 600Ω, 10Hz to 100kHz, Minimum resolution of test equipment is 0.005%.
Spec Number
7
511062-883
HA-5222
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.
However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Spec Number
8
511062-883
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