datasheet

SK15GH063
$ 3 10 4! Absolute Maximum Ratings
Symbol Conditions
IGBT
5-"
$6 3 10 4
&
$6 3 910 4
&=>
IGBT Module
SK15GH063
.88
5
18
:
$ 3 ;8 4
9<
:
/8
:
? 18
5
$6 3 910 4
98
C
$ 3 10 4
18
:
$ 3 ;8 4
90
:
1;
:
988
:
&=>3 1 &
5 3 /88 5@ 5'- A 18 5@
5-" B .88 5
Units
$ 3 10 4
5'-"
SEMITOP® 2
Values
Inverse Diode
&D
$6 3 908 4
&D=>
&D=>3 1 &D
&D">
3 98 @ 2
$6 3 908 4
Module
&=>"
Preliminary Data
:
$26
$
Features
! "
#$% &'$
(
) *) +! , -./ 0/1
Typical Applications*
"
&2
"
*#"
5
:! 9 ,
5'- 3 5-! & 3 8!< :
&-"
5'- 3 8 5! 5- 3 5-"
4
%<8 ,,, E910
4
1088
5
$ 3 10 4! Characteristics
Symbol Conditions
IGBT
5'-
%<8 ,,, E908
min.
typ.
<!0
0!0
$6 3 10 4
max.
.!0
5
8!80
:
$6 3 910 4
&'-"
5- 3 8 5! 5'- 3 18 5
:
$6 3 10 4
918
$6 3 910 4
5-8
-
$6 3 10 4
5'- 3 90 5
& 3 90 :! 5'- 3 90 5
5
$6 3 910 4
9
5
$6 3 104
0/
F
$6 3 104
2,
F
1
1!0
$6 3 9104
2,
5- 3 10! 5'- 3 8 5
=' 3 .; F
=' 3 .; F
-
=6%
&'$
5 3 /885
&3 90:
$6 3 910 4
5'-3?905
5
5
8!;
D
D
8!8.
D
/0
08
8!G9
108
18
H
8!<
H
3 9 >+
-
:
:
9!1
$6 3 9104
5-
Units
9!I
JKL
GH
1
17-11-2006 DIL
© by SEMIKRON
SK15GH063
Characteristics
Symbol Conditions
Inverse Diode
5D 3 5-
SEMITOP® 2
IGBT Module
&D 3 98 :@ 5'- 3 8 5
min.
$6 3 10 4
2,
typ.
max.
Units
9!<0
9!G
5
$6 3 910 4
2,
9!<
9!G
5
5D8
$6 3 910 4
8!;0
8!I
5
D
$6 3 910 4
00
;8
F
$6 3 910 4
9/
9!0
:
C
8!<0
H
&==>
M
&D 3 98 :
K 3 %188 :KC
-
53 /885
=6%
9!1
>
N >9
1
9I
JKL
SK15GH063
Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
! "
#$% &'$
(
) *) +! , -./ 0/1
Typical Applications*
"
&2
"
*#"
GH
2
17-11-2006 DIL
© by SEMIKRON
SK15GH063
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
17-11-2006 DIL
© by SEMIKRON
SK15GH063
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
17-11-2006 DIL
© by SEMIKRON
SK15GH063
UL recognized file
no. E 63 532
$0 " ! #! O 1
$0
5
'
17-11-2006 DIL
© by SEMIKRON