DATASHEET

HD-6409/883
TM
CMOS Manchester Encoder-Decoder
March 1997
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HD-6409/883 Manchester Encoder-Decoder (MED) is a
high speed, low power device manufactured using selfaligned silicon gate technology. The device is intended for
use in serial data communication, and can be operated in
either of two modes. In the converter mode, the MED converts Nonreturn-to-Zero code (NRZ) into Manchester code
and decodes Manchester code into Nonreturn-to-Zero code.
For serial data communication, Manchester code does not
have some of the deficiencies inherent in Nonreturn-to-Zero
code. For instance, use of the MED on a serial line eliminates DC components, provides clock recovery, and gives a
relatively high degree of noise immunity. Because the MED
converts the most commonly used code (NRZ) to Manchester code, the advantages of using Manchester code are easily realized in a serial data link.
• Converter or Repeater Mode
• Independent Manchester Encoder and Decoder
Operation
• Static to One Megabit/Sec Data Rate Guaranteed
• Low Bit Error Rate
• Digital PLL Clock Recovery
• On Chip Oscillator
• Low Operating Power: 50mW Typical at +5V
• Available in 20 Lead Dual-In-Line and 20 Pad LCC
Package
Ordering Information
PART NUMBER
TEMPERATURE
RANGE
HD1-6409/883
-55oC to +125oC
CERDIP
F20.3
HD4-6409/883
-55oC to +125oC
CLCC
J20.A
PACKAGE
PKG.
NO.
In the Repeater mode, the MED accepts Manchester code
input and reconstructs it with a recovered clock. This minimizes the effects of noise on a serial data link. A digital
phase lock loop generates the recovered clock. A maximum
data rate of 1MHz requires only 50mW of power.
Manchester code is used in magnetic tape recording and in
fiber optic communication, and generally is used where data
accuracy is imperative. Because it frames blocks of data, the
HD-6409/883 easily interfaces to protocol controllers.
Pinouts
19 BOO
BOO
2
VCC
20 VCC
BZI
1
BOI
BZI
BOI
HD4-6409/883 (CLCC)
TOP VIEW
UDI
HD1-6409/883 (CERDIP)
TOP VIEW
3
2
1
20
19
17 SS
SRST
6
16 ECLK
14 MS
NVM
7
15 CTS
8
13 OX
DCLK
8
14 MS
9
12 IX
5
16 ECLK
SRST
6
15 CTS
NVM
7
DCLK
RST
GND 10
11 CO
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
135
9
10
11
12
13
OX
5
SDO
IX
SDO
17 SS
CO
18 BZO
18 BZO
4
GND
4
3
RST
SD/CDS
UDI
SD/CDS
FN2959.1
HD-6409/883
Block Diagram
SDO
NVM
BOI
BZI
BOO
DATA
INPUT
LOGIC
OUTPUT
SELECT
LOGIC
5-BIT SHIFT
REGISTER
AND DECODER
BZO
UDI
COMMAND
SYNC
GENERATOR
EDGE
DETECTOR
CTS
SRST
RST
RESET
SD
SD/CDS
INPUT/
OUTPUT
SELECT
MANCHESTER
ENCODER
MS
IX
OX
OSCILLATOR
ECLK
DCLK
COUNTER
CIRCUITS
CO
SS
Logic Symbol
17
SS
CO
SD/CDS
ECLK
MS
RST
SDO
DCLK
NVM
SRST
11
13
CLOCK
GENERATOR
19
4
16
12
ENCODER
18
15
OX
IX
BOO
BZO
CTS
14
9
CONTROL
8
2
1
BOI
7
3
BZI
UDI
5
6
DECODER
136
HD-6409/883
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage Applied. . . . . GND -0.5V to VCC +0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA ( oC/W) θJC (oC/W)
CERDIP Package . . . . . . . . . . . . . . . .
83
23
CLCC Package . . . . . . . . . . . . . . . . . .
95
26
Storage Temperature Range . . . . . . . . . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times. . . . . . . . . . . . . . . . . . . . . . . . . . 50ns Max
Sync. Transition Span (t2) . . . . . . . . . 1.5 DBP Typical, (Notes 1, 2)
Short Data Transition Span (t4) . . . . . 0.5 DBP Typical, (Notes 1, 2)
Long Data Transition Span (t5) . . . . . 1.0 DBP Typical, (Notes 1, 2)
Zero Crossing Tolerance (tCD5) . . . . . . . . . . . . . . . . . . . . . (Note 3)
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. DBP - Data Bit Period. Clock Rate = 16X, one DBP = 16 Clock Cycles; Clock Rate = 32X; one DBP = 32 Clock Cycles.
2. The input conditions specified are nominal values, the actual input waveforms transition spans may vary by ±2 IX clock cycles (16X mode)
or ±6 IX clock cycles (32X mode).
3. The maximum zero crossing tolerance is ±2 IX clock cycles (16X mode) or ±6 IX clock cycles (32X mode) from the nominal.
TABLE 1. HD-6409/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
Logic “1” Input Voltage
VIH
VCC = 4.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
70%
VCC
-
V
Logic “0” Input voltage
VIL
VCC = 4.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
20% VCC
V
Logic “1” Input Voltage
(RST)
VIHR
VCC = 5.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
VCC -0.5
-
V
Logic “0” Input Voltage
(RST)
VILR
VCC = 4.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
GND +0.5
V
Logic “1” Input Voltage (IX)
VIHC
VCC = 5.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
VCC -0.5
-
V
Logic “0” Input Voltage (IX)
VlLC
VCC = 4.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
GND +0.5
V
Input Leakage Current
(Except IX)
II
VIN = VCC or
GND
VCC = 5.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
-1.0
+1.0
µA
Input Leakage Current (IX)
II
VlN = VCC or
GND
VCC = 5.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
-20
+20
µA
I/O Leakage Current
IO
VOUT = VCC
or GND
VCC = 5.5V
1, 2, 3
-55oC ≤ TA ≤ +125oC
-10
+10
µA
Output HIGH Voltage
(All except OX)
VOH
IOH = -2.0mA
VCC = 4.5V
(Note 1)
1, 2, 3
-55oC ≤ TA ≤ +125oC
VCC -0.4
-
V
Output LOW Voltage
(All except OX)
VOL
IOL = +2.0mA
VCC = 4.5V
(Note 1)
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
0.4
V
137
HD-6409/883
TABLE 1. HD-6409/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
Device Guaranteed and 100% Tested
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
-
100
µA
Standby Power Supply
Current
ICCSB
VIN = VCC or
GND,
VCC = 5.5V,
Outputs Open
1, 2, 3
-55oC ≤ TA ≤ +125oC
Operating Power Supply
Current
ICCOP
f = 16.0MHz,
VIN = VCC or
GND
VCC = 5.5V,
CL = 50pF
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
18.0
mA
7, 8
-55oC ≤ TA ≤ +125oC
-
-
-
Functional Test
FT
(Note 2)
NOTES:
1. Interchanging of force and sense conditions is permitted.
2. Tested as follows: f = 16MHz, VIH = 70% VCC, VIL = 20% VCC, VOH ≥ VCC/2, and VOL ≤ VCC/2, VCC = 4.5V and 5.5V.
TABLE 2. HD-6409/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
LIMITS
PARAMETER
(NOTE 1)
CONDITIONS
SYMBOL
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
Clock Frequency
fC
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
16
MHz
Clock Period
tC
9, 10, 11
-55oC ≤ TA ≤ +125oC
1/fC
-
sec
Bipolar Pulse Width
t1
9, 10, 11
-55oC ≤ TA ≤ +125oC
tC +10
-
ns
One-Zero Overlap
t3
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
tC - 10
ns
Clock High Time
tCH
f =16.0MHz
9, 10, 11
-55oC ≤ TA ≤ +125oC
20
-
ns
Clock Low Time
tCL
f =16.0MHz
9, 10, 11
-55oC ≤ TA ≤ +125oC
20
-
ns
Serial Data Setup Time
tCE1
9, 10, 11
-55oC ≤ TA ≤ +125oC
120
-
ns
Serial Data Hold Time
tCE2
9, 10, 11
-55oC ≤ TA ≤ +125oC
0
-
ns
DCLK to SDO, NVM
tCD2
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
40
ns
tR2
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
40
ns
ECLK to BZO
NOTES:
1. AC Testing as follows: f = 4.0MHz, VIH = 70% VCC, VIL = 20% VCC, Speed Select = 16X; VOH ≥ VCC/2, VOL ≤ VCC/2; VCC = 4.5V
and 5.5V; Input rise and fall times driven at 1 ns/V, Output load = 50pF.
TABLE 3. HD-6409/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
LIMITS
PARAMETER
SYMBOL
Input Capacitance
CIN
I/O Capacitance
CI/O
Output Rise Time (All except CO)
tr
CONDITIONS
VCC = Open, f =1MHz
All Measurements are
referenced to device
GND
From 1.0 to 3.5V
CL = 50pF
138
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 2
TA = +25oC
-
10
pF
1, 2
TA = +25oC
-
12
pF
1, 2
-55oC ≤ TA ≤ +125oC
-
50
ns
HD-6409/883
TABLE 3. HD-6409/883 ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
Output Fall Time (All except CO)
tf
From 3.5 to 1.0V
CL = 50pF
1, 2
-55oC ≤ TA ≤ +125oC
-
50
ns
CO Rise Time
tr
From 1.0 to 3.5V
CL = 20pF
1, 2
-55oC ≤ TA ≤ +125oC
-
11
ns
CO Fall Time
tf
From 3.5 to 1.0V
CL = 20pF
1, 2
-55oC ≤ TA ≤ +125oC
-
11
ns
ECLK to BZO, BOO
tCE3
1, 3
-55oC ≤ TA ≤ +125oC
0.5
1.0
DBP
CTS Low to BZO BOO Enabled
tCE4
1, 3
-55oC ≤ TA ≤ +125oC
0.5
1.5
DBP
CTS Low to ECLK Enabled
tCE5
1, 3
-55oC ≤ TA ≤ +125oC
10.5
11.5
DBP
CTS High to ECLK Disabled
tCE6
1, 3
-55oC ≤ TA ≤ +125oC
-
1.0
DBP
CTS High to BZO BOO Disabled
tCE7
1, 3
-55oC ≤ TA ≤ +125oC
1.5
2.5
DBP
UDI to SDO, NVM
tCD1
1, 3
-55oC ≤ TA ≤ +125oC
2.5
3.0
DBP
RST Low to DCLK, SDO, NVM Low
tCD3
1.3
-55oC ≤ TA ≤ +125oC
0.5
1.5
DBP
RST High to DCLK, Enabled
tCD4
1, 3
-55oC ≤ TA ≤ +125oC
0.5
1.5
DBP
UDI to BZO, BOO
tR1
1, 3
-55oC ≤ TA ≤ +125oC
0.5
1.0
DBP
UDI to SDO, NVM
tR3
1, 3
-55oC ≤ TA ≤ +125oC
2.5
3.0
DBP
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested.
2. Guaranteed via characterization at initial device design and after major process and/or design changes.
3. DBP-Data Bit Period, Clock Rate = 16X, one DBP = 16 Clock Cycles; Clock Rate = 32X, one DBP = 32 Clock Cycles.
TABLE 4. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
SUBGROUPS
Initial Test
100%/5004
-
Interim Test
100%/5004
1, 7, 9
PDA
100%
1
Final Test
100%
2, 3, 8A, 8B, 10, 11
-
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Samples/5005
1, 7, 9
Group A
Groups C & D
139
HD-6409/883
Burn-In Circuits
HD-6409/883 CERDIP
VCC
VCC
A
1
20
19
R1
R1
R1
F4
GND
HD-6409/883 CLCC
R1
1
20
VCC
2
19
A
3
18
GND
4
17
GND
A
5
16
A
A
6
15
A
7
14
8
13
9
12
F0
10
11
A
A
R1
R1
R1
R1
R1
GND
A
4
A
5
17
A
6
16
A
A
A
14
8
9
10
11
A
VCC
A
R1
1. VCC = 5.5V ±0.5V
2. VIH = 4.5V ±10%
= 100kHz ±10%
6. F4
= F0/16
13
R1
NOTES:
= 47kΩ ±5%
12
VCC
R1
5. F0
GND
R1
A
4. R1
A
15
7
R1
= -0.2V to 0.4V
GND
R1
GND
VCC
3. VIL
A
18
R1
GND
R1
2
R1
VCC
3
R1
A
F4
R1
F0
GND
R1
R1
VCC
140
GND
HD-6409/883
Die Characteristics
DIE DIMENSIONS:
88 x 78 x 19 ±1mils
GLASSIVATION:
Type: Si3N4 • SiOX
Thickness: 10kÅ ±2kÅ
METALLIZATION:
Type: Silicon - Aluminum
Thickness: Metal 1: 8kÅ ±1kÅ
Metal 2: 16kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
0.8 x 105 A/cm2
Metallization Mask Layout
HD-6409/883
UDI
BOI
BZI
VCC
BOO
SD/CDS
BZO
SDO
SS
SRST
ECLK
NVM
CTS
DCLK
MS
RST
GND
CO
141
IX
OX
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