CMOS LDO Regulators

Innovations Embedded
HVSOP5
VCSP60N1
CMOS LDO Regulators
for portable devices
 Mobile
ROHM MarketingUSA
Phones
 Camcorders
 PDAs
 Digital
Cameras
Selection Guide
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
performance required for the specific
as well as ultra-small chip-scale units.
regulators are tailored for use in portable
task, such as high ripple rejection for
Depending on the particular model
devices such as PDAs, mobile phones,
analog signal systems or high-speed
series, these fixed-output devices offer a
digital cameras and camcorders. Lower
load regulation for logic circuits. All
selection of output voltages ranging from
in cost and small in packaging, ROHM
ROHM CMOS LDOs feature power-
1.2 V to 3.4 V.
CMOS LDOs offer designers a superior
saving shutdown capability and all are
In additon to the wide selection of
alternative to PWM regulators in many
compatible with space-saving ceramic
single-output devices, ROHM offers
point-of-load regulation applications.
capacitors.
a series of triple-output models in a
ROHM CMOS LDO (low drop-out)
A complete lineup is available offering
designers the ability to optimize the
ROHM CMOS LDOs are available in
compact surface-mount package.
very small surface mount packages
ROHM CMOS LDO Performance Features
High Ripple Rejection
assures stable operation
Excellent Load Regulation
High ESD Resistance
even during load fluctuations
assures high reliability in any
environment
Ceramic Capacitor
Compatibility
Ultra-Low Dropout
reduces circuit footprint
input/output voltage difference
minimizes power loss
0μA Standby Current
feature prolongs battery life
Precise Regulation
maintains selected voltage with
±1% accuracy
Protection Circuits
Discharge Circuit
prevent over-current and overtemperature damage
improves stability and reduces
external components
Automatic Power Saving
reduces current during no-load
conditions*
* BHPB1WHFV
1.888.775.ROHM
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
Important Performance Benefits of ROHM CMOS LDOs
 Automatic Power Saving Function
Measurement Conditions
ROHM’s Automatic Power Saving Function (BHxxPB1 series)
BH12PB1WHFV
VCC = 2.2V
VSEL = open,
VSTBY = 1.5V
Vcc
Consumption LDO. Under light load conditions, the operating
current is reduced from 20 μA to 2 μA, thereby extending
battery life.
Low Power
Consumption LDO
SW
(During Standby)
VOUT
Fast Load
Response LDO
(During Normal Operation)
30
GND current IGND(μA)
Automatic switching
switches between a fast response LDO and a Low Power
Current
monitor
High-speed response mode
20
10
Low consumption mode
0
0
0.5
Hybrid system
1
1.5
2
2.5
3
Output current IOUT (mA)
 Foldback Overcurrent Protection
Conventional Droop-type
Overcurrent Protection Circuit
models minimizes the current during abnormal conditions,
such as short circuits, preventing damage (along with the
integrated thermal shutdown) to both the IC and peripheral
ROHM Foldback-type
Overcurrent Protection Circuit
3.5
3.5
3
Output voltage (V)
Output voltage (V)
ROHM’s foldback overcurrent protection provided on all
2.5
2
1.5
1
Large short-circuit
currents result in excessive
heat generation
0.5
0
100
circuitry.
200
300
400
500
600
700
3
Small
short-circuit
current prevents
damage
2.5
2
1.5
1
0.5
0
100
200
Load current (mA)
 Built-in Phase Compensation
300
400
500
600
700
Load current (mA)
Ripple Rejection Characteristics
100
ROHM CMOS LDOs utilize a high-performance amplifier
Ripple Rejection (dB)
90
along with optimized phase compensation circuitry to provide
exceptional ripple rejection performance – up to 70 dB
(for BHxxLB1 and BHxxFB1 series) and higher (80 dB for
80
70
ROHM
60
50
Conventional
40
30
BHxxNB1 series.)
20
100
1K
10K
100K
Frequency (Hz)
Conventional
ROHM TA2 Series
100mA (Cout = 1.0μF)
Iout = 0mA
100
changes. This benefit is fully realized in the performance of
OUtput voltage (V)
50
ROHM’s high-speed load response LDOs (BHxxTA2 series)
as compared to conventional units.
0
3.020
3.000
2.980
2.960
100mA (Cout = 1.0μF)
100
50
OUtput voltage (V)
ROHM LDOs provide exceptional response to fast load
Output current (mA)
Iout = 0mA
0
3.020
3.000
Output current (mA)
 Superior Load Response
2.980
2.960
High-speed response
ΔV = 20mV
ΔV = 98mV
 Built-in Discharge Function
OFF
ROHM’s integrated output capacitor discharge function
ON
OFF
STBY
(ON/OFF)
eliminates the requirement for external blocking diodes to
No Power
ON Reset function
= Unstable operation
Residual
voltage
Output Voltage
(Conventional Regulator)
prevent reverse voltage upon shutdown and also ensures
stable operation upon startup. This function is available on
Output Voltage
(ROHM CMOS Regulator)
Automatic Power Saving (BHxxPB1 series) and High-Speed
Voltage
discharged
Stable operation
Time
Load Response (BHxxTA2 series) LDOs.
1.888.775.ROHM
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
Packaging Solutions of ROHM CMOS LDOs
 Compact HVSOF5 (LB1/FB1, NB1, PB1 & TA2)
The compact, low profile HVSOF5 package is considerably
Integrated heat sink ensures
high power compatibility: 410mW
(Rear)
1.6
(when mounted on a substrate)
1.6
smaller than conventional SC82 or SOT23-5 packages. In
SC82
SOT23-5
Conventional type A
addition, the backside heatsink enables power disspation (Pd)
Conventional type B
(Surface)
2.1
of up to 410 mW. (see Design Note on Page 11)
2.0
2.8
1.6
40%
70%
1.6
Smaller
2.9
Smaller
[Unit : mm]
HVSOF5
 Ultra-Compact VCSP60N1 (RB1 Series)
SOT23-5
(SSOP5)
For the ultimate in space-saving packaging, the VCSP60N1
2.8
Power dissipation
540mW
chip-size package (CSP) is unrivaled. High power dissipation
1.0
(when mounted on a substrate)
87.5%
1.04
capability (540 mW) and low package height make this part
smaller
0.6
the ideal choice for high-density mounting.
2.9
1.25
[Unit : mm]
VCSP60N1
 Ultra-Compact SSON004X1216 (TA2 Series)
Integrated heat sink ensures
high power compatibility: 220mW
(Rear)
ROHM’s High-Speed Load Response CMOS LDOs are
1.2
(when mounted on a substrate)
1.6
offered in the ultra-compact SSON004X1216 package that
HVSOF5
SOT23-5
Conventional A
features a very small footprint and integrated heatsink and
Conventional B
(Surface)
1.6
1.6
exceptional power dissipation (540 mW).
25%
2.8
1.2
76%
1.6
Smaller
2.9
Smaller
[Unit: mm]
SSON004X1216
 Compact, High-Power HSVOF6 (MA3 Series)
(Rear)
Integrated heat sink ensures
high power compatibility: 680mW
1.6
ROHM 300 mA CMOS LDOs (MA3 series and BH6733HFV)
3.0
are packaged in the HSVOF6 package that provides ample
margin against surge currents or overloads and has a
2.8
backside heatsink capable of dissipating 680 mW.
2.9
(Surface)
40%
Smaller
[Unit: mm]
1.888.775.ROHM
(when mounted on a substrate)
SOT23-5
Conventional type
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1.6
3.0
HVSOF6
CNA09017_sg
CMOS LDO Regulators
Product Lineup
Standard CMOS LDO Regulators
BHLB1WG Series
BHLB1WHFV Series
BHFB1WG Series
BHFB1WHFV Series
300mA Large Current CMOS LDO Regulators
BHMA3WHFV Series
BH6733HFV
CSP (Chip-Size Package) CMOS LDO Regulators
BHRB1WGUT Series
High Ripple Rejection CMOS LDO Regulators
BHNB1WHFV Series
CMOS LDO Regulators with Automatic Power Saving Function
BHPB1WHFV Series
High Speed Load Response CMOS LDO Regulators
BHTA2WNVX Series
BHTA2WHFV Series
Triple Output CMOS LDO Regulators
BU665NUX Series
Key
Ultra small
surface mount
package
With
a shutdown
switch
Small surface
mount
package
Output
current
Compact power
surface mount
package
Low operating
current
Output voltage
2.5Vࠥ3.3V
Output voltage
1.2Vࠥ1.85V
Triple output
1.888.775.ROHM
Temperature
protection circuit built-in
Automatic
power save function
Compatible with
compact ceramic
capacitors
High-speed load
response
Output discharge
function built-in
Voltage
tolerance
Ultra-compact
chip scale package
Standby current
Soft start function
Ripple rejection
60dB/63dB/65dB/
70dB/80dB
5kV/6kV/8kV
ESD resistance
Overcurrent
protection circuit
Low saturation voltage
60mV/100mV
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
Standard CMOS LDO Regulators (BHxxLB1 & BHxxFB1 Series)
ROHM’s LB1 series of standard CMOS LDOs features 150 mA output and
high output voltage accuracy (±1%). Advanced BiCMOS process technology
ensures low current consumption (40 μA) and high ripple rejection (70 dB).
BiCMOS Output Stage
Important Features

Nine output voltages from 1.5 to 3.3 V,
including 1.85 V (see page 12 for details)
Circuit Current Comparison
1400

1% output accuracy (FB1); ±25 mV (LB1)

150 mA output current

70 dB ripple rejection

5 kV ESD protection

40 μA circuit current (see Figure 1)

Ceramic capacitor compatibility (see Design
Note below)
Circuit Current (μA)
1200
Overcurrent protection — foldback type
(50 mA)

Thermal shutdown

Standby feature

STBY input - 0 μA current in standby mode

Two package options:
Standard SSOP5 (540 mW dissipation)
Compact, low-profile (0.6 mm) HVSOF5
(410 mW dissipation)
(see package details on page 3)
600
Low
consumption
400
40μA
200
ROHM
0
0
50
100
150
Figure 1. The P-channel MOSFET at the output stage of ROHM’s
line of Standard CMOS LDOs results in a dramatically lower circuit
current than possible with convention bipolar types.
Ceramic Capacitors
DC Bias Voltage vs. Ceramic Capacitor Capacitance
(characteristic example)
Ceramic Capacitor Capacitance Change (%)
1.888.775.ROHM
Conventional
800
Load Current (mA)

DESIGN
NOTE
1000
10V Voltage Resistance
B1 Characteristics
10
0
10V Voltage Resistance
B Characteristics
–10
–20
–30
6.3V Voltage Characteristics
B Characteristics
–40
–50
4V Voltage Characteristics
X6S Characteristics
–60
–70
–80
10V Voltage Characteristics
F Characteristics
–90
–100
0
1
2
3
4
The capacitance of ceramic capacitors may
decrease due to temperature fluctuations or DC bias
making capacitor selection especially important. It is
imperative that the minimum capacitance of both the
input and output capacitor be confirmed as part of
the circuit design.
10V Voltage Resistance
F Characteristics
DC bias voltage (V)
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
300 mA CMOS LDO Regulators (BHxxMA3 Series / BH6733)
ROHM’s MA3 series of high current LDOs regulators features 300 mA output current rating,
±1% output voltage accuracy; 6 mV load regulation and a minimum input/output voltage
difference of just 60 mV. The Model BH6733HFV, 3.3 V output LDO, offers the same 300 mA
current rating and features soft start and output discharge functions as well.
Important Features


Eight output voltages from 1.5 to 3.3 V
(see page 12 for details)

Thermal shutdown

Standby feature
1% output accuracy (±25 mV for 1.5 V and
1.8 V output models & ±2% for BH6733HFV)

STBY input - 0 μA in standby mode

Integrated soft start and discharge
functionality – see Figure 3 (BH6733HFV only)

HVSOF6 high power dissipation with
integrated heat sink — 680 mW

300 mA output current

60 dB ripple rejection (70 dB for BH6733HFV)

6 kV ESD protection (8 kV for BH6733HFV)

65 μA circuit current (90 μA for BH6733HFV)

Low package profile — 0.75 mm

6 mV load regulation (MA3 series)

Low (0.6 ohm) ON resistance internal FET

60 mV minimum input/output differential (MA3
series) – see Figure 2

Dual output terminals

Ceramic capacitor compatibility (see Design
Note on page 5)

Overcurrent protection — foldback type
(100 mA)
Low Input/Output Voltage Differential
Soft Start & Discharge Functions
OFF
Input/Output Voltage Difference Comparison
ON
OFF
Input/output voltage difference (V)
Application
Vcc
STBY
Vo
STBY
Startup control
Conventional
0.2
4700p
SS
4.7μ
ROHM
60mV
Reliable OFF
switching
VOUT
Discharge
0.1
0
SS
Soft start
Input/output
voltage difference
100
200
Figure 3. Integrated soft start and outout capacitor discharge
functionality combine to simplifiy sequence control.
300
Load current (mA)
Figure 2. The input output difference of just 60 mV @ 100 mA load
current is achieved by optimizing the size of the output transistor for
low ON resistance.
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
Chip-Scale Package CMOS LDO Regulators (BHxxRB1 Series)
ROHM’s RB1 series of CSP (Chip-Scale Package) CMOS LDOs is optimized for high
density mounting in applications like cell phones and digital cameras where both board
space and headroom are severely limited.
Important Features

Eight output voltages from 1.5 to 3.3 V
(see page 12 for details)

Ceramic capacitor compatibility (see Design
Note on page 5)

1% output accuracy (±25 mV for 1.5 V and
1.8 V output models)

Overcurrent protection — foldback type (40 mA)

Thermal shutdown

150 mA output current

Standby feature

63 dB ripple rejection


5 kV ESD protection
Ultra compact, low-profile 4-pin CSP package
(see page 14 for dimensional details)

34 μA circuit current (see Figure 6)

Mounting area 1/8 of SOT23-5 (see Figure 7)

2 mV load regulation

Excellent power dissipation — 540 mW

STBY input - 0 μA in standby mode

Low package profile — 0.6 mm

100 mV dropout voltage (see Figure 5)

High-reliability CSP construction (see Figure 4)
High-Reliability Packaging
BiCMOS Output Stage
Circuit Current Comparison
CSP Construction
POST
structure
1400
No cracking
during
installation
1200
Overcoat
Silicon
Circuit current (μA)
Ultra-thin
Cu POST construction
compatible with PCBs
0.6 mm
Thickness
PCB
1000
Conventional
800
600
Low
consumption
400
34μA
200
Small solder balls can be
attached to prevent problems
during installation
ROHM
0
0
50
100
150
Load Current (mA)
Figure 4. Extra steps are taken to ensure reliable operation and
simplify product placement.
Low Input/Output Voltage Differential
Figure 6. The P-channel MOSFET at the output stage of ROHM’s line
of Standard CMOS LDOs results in a dramatically lower circuit current
than possible with convention bipolar types.
Low Input/Output Voltage Difference (V)
Chip-Scale Package Size Advantage
Low Input/Output Voltage Difference
SOT23-5
SOT23-5
(SSOP5)
(SSOP5)
2.8
400
300
Power dissipation
540mW
Power
dissipation
(when mounted on a substrate)
540mW
1.04
(when mounted on a substrate)
Input/output
voltage difference
200
100mV
Conventional
1.04
0.6
0.6
100
ROHM
50
2.8
87.5%
87.5%
smaller
smaller
2.9
2.9
1.25
1.25
[Unit : mm]
[Unit : mm]
0
1.0
1.0
100
150
VCSP60N1
VCSP60N1
Load current (mA)
Figure 5. The input output difference of just 100 mV @ 100 mA
load current is achieved by optimizing the size of the output
transistor for low ON resistance.
1.888.775.ROHM
Figure 7. The VCSP60N1 chip-scale package provides the same power
dissipation performance as the much larger SOT23-5 package.
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
High Ripple Rejection CMOS LDO Regulators
for High Frequency Circuits (BHxxNB1 Series)
The NB1 series of ROHM CMOS LDOs includes proprietary phase compensation to achieve
80 dB ripple rejection without the use of external filter capacitors. These devices also offer
exceptional line and load regulation performance.
Important Features

Seven output voltages from 2.5 to 3.3 V
(see page 12 for details)

Ceramic capacitor compatibility (see Design Note
on page 5)

1% output voltage accuracy

Overcurrent protection — foldback type (50 mA)

150 mA output current

Standby feature

80 dB ripple rejection (see Figure 8)

Thermal shutdown

6 kV ESD protection


60 μA circuit current (@ IO = 100 mA)
Low-profile HVSOF5 package — 0.6 mm
(see page 14 for dimensional details)

6 mV load regulation (see Figure 9)


1 mV line regulation (see Figure 9)
70% less mounting space than SOT23-5
(see page 3)

25 mV load response — ideal for analog circuits

STBY input - 0 μA in standby mode
High Ripple Rejection without
Filter Capacitors
Superior Line and Load Regulation
Load Regulation Comparison
Ripple Rejection Comparison
3.0
ROHM
Ripple rejection R.R. (dB)
(1kHz)
80
60
ROHM
70dB
Conventional
40
20
High-stability
ROHM
Output voltage (V)
80dB
100
6mV
Conventional
11mV
0
50
100
Load current (mA)
100
1K
10K
100K
Frequency (Hz)
Line Regulation Comparison
Figure 8. ROHM high ripple rejection LDOs provide rejection
ratios of up to 80 dB without the need for the filter capacitors
required with conventional regulators provide.
Output voltage (V)
3.010
3mV
3.005
Conventional
3.000
ROHM
High stability
1mV
2.995
2.990
3.5
4
4.5
5
5.5
Input voltage (V)
Figure 9. ROHM’s proprietary circuitry assures power supply stability
with significantly varying load currents or large input voltage variations.
1.888.775.ROHM
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
CMOS LDO Regulators with Automatic
Power Saving Function (BHxxPB1 Series)
The PB1 series of ROHM LDOs features a hybrid system made up of two LDO circuits
that are engaged based upon the current load level, thereby reducing the circuit’s
current consumption under light load conditions.
Important Features

Nine output voltages from 1.2 to 3.3 V
(see page 13 for details)

STBY input - 0 μA in standby mode

1% output accuracy (±25 mV for 1.2 V, 1.5 V
and 1.8 V output models)*

Output discharge function (see page 2)

Ceramic capacitor compatibility (see Design
Note on page 5)

10 mV load regulation*

Overcurrent protection — foldback type (60 mA)

150 mA output current

Standby feature

60 dB ripple rejection*

Thermal shutdown

8 kV ESD protection


Automatic Power Saving (APS) function
(see Figure 10)
Thermal shutdown and overcurrent protection
active in shutdown mode

Low-profile HVSOF5 package — 0.6 mm
(see page 14 for dimensional details)

70% less mounting space than SOT23-5
(see page 3)

Inrush current protection


2 μA circuit current at no load

20 μA circuit current (@ IO = 100 mA)
Very low voltage (1.7 V) input capability (see
Figure 11)
* high-speed mode
Automatic Power Saving Function
Very Low Input Voltage
Low Voltage Operation
Measurement Conditions
BH12PB1WHFV
VCC = 2.2V
VSEL = open,
VSTBY = 1.5V
Low Power
Consumption LDO
SW
(During Standby)
VOUT
Fast Load
Response LDO
(During Normal Operation)
Current
monitor
GND current IGND(μA)
Automatic switching
Vcc
Lithium ion battery
4.2
30
Nickel Hydride Battery
High-speed response mode
2.4
1.8
20
Low-voltage
operation from 1.7V
with sufficient
margin
10
2.5
5.5
ROHM conventional products
Low consumption mode
0
0
Hybrid system
2.5
1.8 Manganese battery 3.0
0.5
1
1.5
2
2.5
1.7
3
5.5
BH……PB1W series
Output current IOUT (mA)
0
1
2
3
4
5
Input voltage (V)
Figure 10. By continuously monitoring the output current, these devices
switch between a fast response LDO and a Low Power Consumption
LDO. During standby mode in cell phones and other portable devices,
the operating current is reduced from 20 μA to 2 μA thereby extending
battery life.
1.888.775.ROHM
Figure 11. The PB1 series of ROHM CMOS LDOs features the ability to
operate from a voltage source as low as 1.7 volts.
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CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
High-Speed Load Response Regulators (BHxxTA2 Series)
The TA2 series of CMOS LDOs is specifically designed for high speed digital circuits and
offers exceptional dynamic regulation to assure reliable operation during load changes.
Important Features


Thirteen output voltages from 1.5 to 3.4 V
(see page 13 for details)

Overcurrent protection — foldback type (70 mA)

Thermal shutdown
1% output accuracy (±25 mV for 1.5 V and1.8 V
output models)

Standby feature

Discharge function

Two package options: compact HVSOF5 and
very compact SSON004X1216

Low-profile package — 0.6 mm
(see page 14 for dimensional details)

HVSOF5 - 70% less mounting space than
SOT23-5 (see page 3)

SSON004X1216- 76% less mounting space
than SOT23-5 (see page 3)

20 mV load regulation

200 mA output current

6 kV ESD protection

40 μA circuit current (@ IO = 100 mA)

STBY input - 0 μA current in standby mode

High speed load response (see Figure 12)

Ceramic capacitor compatibility (see Design Note
on page 5)
High Speed Load Response
Fast Load Response Characteristics
2.980
2.960
2.980
0
3.050
3.000
2.950
2.900
Small load
fluctuation
2.960
Continuous
Load Change
High-speed response
ΔV =
mV
20
Output voltage (V)
ΔV = 98mV
3.000
100
3.100
3.050
3.000
2.950
200
100
0
Output current (mA)
3.000
0
3.020
200
Large
Load Change
Output voltage (V)
0
3.020
50
OUtput current mA)
Output voltage (V)
50
100mA (Cout = 1.0μF)
100
OUtput voltage (V)
100
Iout = 0mA
Output current (mA)
ROHM
100mA (Cout = 1.0μF)
OUtput current (mA)
Conventional
Iout = 0mA
Load Response Characteristics
Small,
continuous load
fluctuations
Figure 12. In general, in digital ICs, the current switches from 0 to IMAX and vice versa, synchronized
with the clock edge. During operation, if VOUT suddenly drops below the operating range a malfunction
could occur. ROHM’s line of fast response CMOS LDOs combine a high (200 mA) current rating with
exceptional dynamic load regulation.
1.888.775.ROHM
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10
CNA09017_sg
CMOS LDO Regulators for Portable Devices
from ROHM Semiconductor
Triple-Output CMOS LDO Regulators (BU665xNUX Series)
ROHM’s BU665xNUX CMOS LDO regulators combine the performace features of the ROHM
single-output LDOs in a three-output compact, low-profile package. Several combinations of
popular output voltages are available to simplify circuit design to independently regulate voltage
to three loads.
Block Diagram and Application Circuit
Important Features

Three output voltages (2.8 V, 1.8 V, 1.5 V)
(see page 13 for ouput voltage combinations)

1% output voltage accuracy

200 mA per channel output current (not to
exceed package total power diussipation)
CIN

70 dB ripple rejection (@ 1.5 V and 1.8 V);
65 dB ripple rejection @ 2.8 V

6 kV ESD protection

10 mV load regulation

1 mV line regulation (see Figure 9)
VREF
VOUT1
STBY1
STBY
COUT
OCP
VREF
VOUT2
STBY2

STBY input - 1 μA in standby mode

Low circuit current (see page 13)

Ceramic capacitor compatibility (see Design
Note on page 5)

VIN
STBY
COUT
OCP
VREF
VOUT3
STBY3
Overcurrent protection — foldback type
STBY
COUT

Thermal shutdown

Independant standby feature for each channel

Low-profile VSON008X2030 package — 0.6
mm (see page 14 for dimensional details)

Power dissipation capacity — 660 mW (see
Design Note below)
DESIGN
NOTE
OCP
Power Dissipation
(mW)
Board size
X1 x Y1 mm2
Pd1
Board size
X2 x Y2 mm2
When calculating the permissible
The permissible loss (Pd) will differ
loss, ambient temperatue and board
depending on the package and board.
characterisitcs (board size, copeer foil area)
Using only the specified value may result in
must be taken into consideration.
unexpected and undesired results.
The first step is to determine the power
consumption (P) of the circuit in question:
P = (VIN - VOUT) x IOUT
1.888.775.ROHM
Pd2
Pd1TaMAX
The published Pd value is based upon
operation at 25°C and ROHM “standard”
test board. and must be derated as
demonstrated in this derating curve.
www.rohmsemiconductor.com
11
25
TaMAX
TjMAX
(˚C)
Derating Curve
CNA09017_sg
CMOS LDO Regulators
Part Selection Guide
Standard CMOS LDO Regulators
BHFB1WG
BHFB1WHFVG
SERIES
BHLB1WG
BHLB1WHFVG
SERIES
SSOP5
Part Number
HVSOF5
Output
Voltage
(V)
Output
Voltage
Accuracy
Output
Current
(mA)
Supply
Voltage
(V)
Circuit
Current
(μA)
Ripple
Rejection
(dB)
ESD
Resistance
(kV)
I/O Voltage
Difference
(mV)
Load Regulation
(mV)
Input
Capacitor
(μF)
Output
Capacitor
(μF)
Shutdown
Function
Overcurrent
Protection
Circuit
Thermal
Shutdown
Circuit
lo=1 to 100mA
BH15LB1WG
BH15LB1WHFV
1.5
±25mV
150
2.5 to 5.5
40
70
5
-
10
0.1
1.0
•
•
•
BH18LB1WG
BH18LB1WHFV
1.8
±25mV
150
2.5 to 5.5
40
70
5
-
10
0.1
1.0
•
•
•
BH1JLB1WG
BH1JLB1WHFV
1.85
±25mV
150
2.5 to 5.5
40
70
5
-
10
0.1
1.0
•
•
•
BH25FB1WG
BH25FB1WHFV
2.5
±1%
150
2.5 to 5.5
40
70
5
250*
10
0.1
2.2
•
•
•
BH28FB1WG
BH28FB1WHFV
2.8
±1%
150
2.5 to 5.5
40
70
5
250*
10
0.1
2.2
•
•
•
BH29FB1WG
BH29FB1WHFV
2.9
±1%
150
2.5 to 5.5
40
70
5
250*
10
0.1
2.2
•
•
•
BH30FB1WG
BH30FB1WHFV
3.0
±1%
150
2.5 to 5.5
40
70
5
250*
10
0.1
2.2
•
•
•
BH31FB1WG
BH31FB1WHFV
3.1
±1%
150
2.5 to 5.5
40
70
5
250*
10
0.1
2.2
•
•
•
BH33FB1WG
BH33FB1WHFV
3.3
±1%
150
2.5 to 5.5
40
70
5
250*
10
0.1
2.2
•
•
•
Discharge
Function
Soft Start
Function
•
•
*lo =100mA
BHMA3WHFV SERIES
300mA Large Current CMOS LDO Regulators
Part No.
HVSOF6
Output
Voltage
(V)
Output
Voltage
Accuracy
Output
Current
(mA)
Supply
Voltage
(V)
Circuit
Current
(μA)
Ripple
Rejection
(dB)
ESD
Resistance
(kV)
I/O Voltage
Difference
(mV)
Load
Regulation
(mV)
Input
Capacitor
(μF)
Output
Capacitor
(μF)
Shutdown
Function
Overcurrent
Protection
Circuit
Thermal
Shutdown
Circuit
BH15MA3WHFV
1.5
±25mV
300
2.5 to 5.5
65
60
6
-
6***
1.0
1.0
•
•
•
BH18MA3WHFV
1.8
±25mV
300
2.5 to 5.5
65
60
6
-
6***
1.0
1.0
•
•
•
BH25MA3WHFV
2.5
±1%
300
2.5 to 5.5
65
60
6
60*
6***
1.0
1.0
•
•
•
BH28MA3WHFV
2.8
±1%
300
2.5 to 5.5
65
60
6
60*
6***
1.0
1.0
•
•
•
BH29MA3WHFV
2.9
±1%
300
2.5 to 5.5
65
60
6
60*
6***
1.0
1.0
•
•
•
BH30MA3WHFV
3.0
±1%
300
2.5 to 5.5
65
60
6
60*
6***
1.0
1.0
•
•
•
BH31MA3WHFV
3.1
±1%
300
2.5 to 5.5
65
60
6
60*
6***
1.0
1.0
•
•
•
BH33MA3WHFV
3.3
±1%
300
2.5 to 5.5
65
60
6
60*
6***
1.0
1.0
•
•
•
BH6733HFV
3.3
±2%
300
2.5 to 5.5
90
70
8
700**
20****
4.7
4.7
•
•
•
*lo =100mA; **lo =300mA; ***lo =1 to 100mA; ****lo =1 to 300mA
CSP (Chip Size Package) CMOS LDO Regulators for High Density Mounting
BHRB1WGUT SERIES
Part No.
VCSP60N1
Output
Voltage
(V)
Output
Voltage
Accuracy
Output
Current
(mA)
Supply
Voltage
(V)
Circuit
Current
(μA)
Ripple
Rejection
(dB)
ESD
Resistance
(kV)
I/O Voltage
Difference
(mV)
Load Regulation
lo=1 to 100mA
(mV)
Input
Capacitor
(μF)
Output
Capacitor
(μF)
Shutdown
Function
Overcurrent
Protection
Circuit
Thermal
Shutdown
Circuit
BH15RB1WGUT
1.5
±25mV
150
2.5 to 5.5
34
63
5
-
2
1.0
1.0
•
•
•
BH18RB1WGUT
1.8
±25mV
150
2.5 to 5.5
34
63
5
-
2
1.0
1.0
•
•
•
BH25RB1WGUT
2.5
±1%
150
2.5 to 5.5
34
63
5
100*
2
1.0
1.0
•
•
•
BH28RB1WGUT
2.8
±1%
150
2.5 to 5.5
34
63
5
100*
2
1.0
1.0
•
•
•
BH29RB1WGUT
2.9
±1%
150
2.5 to 5.5
34
63
5
100*
2
1.0
1.0
•
•
•
BH30RB1WGUT
3.0
±1%
150
2.5 to 5.5
34
63
5
100*
2
1.0
1.0
•
•
•
BH31RB1WGUT
3.1
±1%
150
2.5 to 5.5
34
63
5
100*
2
1.0
1.0
•
•
•
BH33RB1WGUT
3.3
±1%
150
2.5 to 5.5
34
63
5
100*
2
1.0
1.0
•
•
•
*lo =100mA
High Ripple Rejection CMOS LDO Regulators for High Frequency Circuits
BHNB1WHFV SERIES
Part No.
HVSOF6
Output
Voltage
(V)
Output
Voltage
Accuracy
Output
Current
(mA)
Supply
Voltage
(V)
Circuit
Current
(μA)
Ripple
Rejection
(dB)
ESD
Resistance
(kV)
I/O Voltage
Difference
(mV)
Load Regulation
(mV)
Input
Capacitor
(μF)
Output
Capacitor
(μF)
Shutdown
Function
Overcurrent
Protection
Circuit
Thermal
Shutdown
Circuit
lo=1 to 100mA
BH25NB1WHFV
2.5
±1%
150
2.5 to 5.5
60
80
6
250*
6
0.1
2.2
•
•
•
BH28NB1WHFV
2.8
±1%
150
2.5 to 5.5
60
80
6
250*
6
0.1
2.2
•
•
•
BH2JNB1WHFV
2.85
±1%
150
2.5 to 5.5
60
80
6
250*
6
0.1
2.2
•
•
•
BH29NB1WHFV
2.9
±1%
150
2.5 to 5.5
60
80
6
250*
6
0.1
2.2
•
•
•
BH30NB1WHFV
3.0
±1%
150
2.5 to 5.5
60
80
6
250*
6
0.1
2.2
•
•
•
BH31NB1WHFV
3.1
±1%
150
2.5 to 5.5
60
80
6
250*
6
0.1
2.2
•
•
•
BH33NB1WHFV
3.3
±1%
150
2.5 to 5.5
60
80
6
250*
6
0.1
2.2
•
•
•
*lo =100mA
1.888.775.ROHM
www.rohmsemiconductor.com
12
CNA09017_sg
CMOS LDO Regulators
Part Selection Guide
BHPB1WHFV SERIES
CMOS LDO Regulators with Automatic Power Saving Function
Part No.
HVSOF5
Output
Voltage
(V)
Output
Voltage
Accuracy
Output
Voltage
Accuracy
Output
Current
(mA)
Supply
Voltage
(V)
Circuit Current
high speed
mode (μA)
Circuit Current Ripple Rejection
ESD
low consumption
high speed
Resistance
mode (μA)
mode (dB)
(kV)
I/O Voltage
Difference
(mV)
Load Regulation
(mV)
Input
Capacitor
(μF)
Output
Capacitor
(μF)
Shutdown
Function
lo=10 to 100mA
Overcurrent Thermal
Protection Shutdown Discharge
Function
Circuit
Circuit
BH12PB1WHFV
1.2
±25mV
-3.3% to +4.3%
150
1.7 to 5.5
20
2
60
8
-
10
0.47
0.47
•
•
•
•
BH15PB1WHFV
1.5
±25mV
-3.3% to +4.3%
150
1.7 to 5.5
20
2
60
8
-
10
0.47
0.47
•
•
•
•
BH18PB1WHFV
1.8
±25mV
-3.3% to +4.3%
150
1.7 to 5.5
20
2
60
8
-
10
0.47
0.47
•
•
•
•
BH25PB1WHFV
2.5
±1%
-3.0% to +3.8%
150
1.7 to 5.5
20
2
60
8
210*
10
0.47
0.47
•
•
•
•
BH28PB1WHFV
2.8
±1%
-3.0% to +3.8%
150
1.7 to 5.5
20
2
60
8
210*
10
0.47
0.47
•
•
•
•
BH29PB1WHFV
2.9
±1%
-3.0% to +3.8%
150
1.7 to 5.5
20
2
60
8
210*
10
0.47
0.47
•
•
•
•
BH30PB1WHFV
3.0
±1%
-3.0% to +3.8%
150
1.7 to 5.5
20
2
60
8
210*
10
0.47
0.47
•
•
•
•
BH31PB1WHFV
3.1
±1%
-3.0% to +3.8%
150
1.7 to 5.5
20
2
60
8
210*
10
0.47
0.47
•
•
•
•
BH33PB1WHFV
3.3
±1%
-3.0% to +3.8%
150
1.7 to 5.5
20
2
60
8
210*
10
0.47
0.47
•
•
•
•
*(lo =100mA)
High Speed Load Response CMOS LDO Regulators
BHTA2WHFV SERIES
BHTA2WNVX SERIES
Part Number
HVSOF5
SSON004X1216
Output
Voltage
(V)
Output
Voltage
Accuracy
Output
Current
(mA)
Supply
Voltage
(V)
Circuit
Current
(μA)
Ripple
Rejection
(dB)
ESD
Resistance
(kV)
I/O Voltage
Difference
(mV)
Load Regulation
(mV)
Input
Capacitor
(μF)
Output
Capacitor
(μF)
Shutdown
Function
lo=0.1 to 200mA
Overcurrent Thermal
Protection Shutdown
Circuit
Circuit
Discharge
Function
BU15TA2WHFV
BU15TA2WNVX
1.5
±25mV
200
2.5 to 5.5
40
70
6
-
20
1.0
1.0
•
•
•
•
BU18TA2WHFV
BU18TA2WNVX
1.8
±25mV
200
2.5 to 5.5
40
70
6
-
20
1.0
1.0
•
•
•
•
BU25TA2WHFV
BU25TA2WNVX
2.5
±1%
200
2.5 to 5.5
40
65
6
400
20
1.0
1.0
•
•
•
•
BU26TA2WHFV
BU26TA2WNVX
2.6
±1%
200
2.5 to 5.5
40
65
6
400
20
1.0
1.0
•
•
•
•
BU27TA2WHFV
BU27TA2WNVX
2.7
±1%
200
2.5 to 5.5
40
65
6
360
20
1.0
1.0
•
•
•
•
BU28TA2WHFV
BU28TA2WNVX
2.8
±1%
200
2.5 to 5.5
40
65
6
360
20
1.0
1.0
•
•
•
•
BU2JTA2WHFV
BU2JTA2WNVX
2.85
±1%
200
2.5 to 5.5
40
65
6
360
20
1.0
1.0
•
•
•
•
BU29TA2WHFV
BU29TA2WNVX
2.9
±1%
200
2.5 to 5.5
40
65
6
330
20
1.0
1.0
•
•
•
•
BU30TA2WHFV
BU30TA2WNVX
3.0
±1%
200
2.5 to 5.5
40
65
6
330
20
1.0
1.0
•
•
•
•
BU31TA2WHFV
BU31TA2WNVX
3.1
±1%
200
2.5 to 5.5
40
65
6
330
20
1.0
1.0
•
•
•
•
BU32TA2WHFV
BU32TA2WNVX
3.2
±1%
200
2.5 to 5.5
40
65
6
300
20
1.0
1.0
•
•
•
•
BU33TA2WHFV
BU33TA2WNVX
3.3
±1%
200
2.5 to 5.5
40
65
6
300
20
1.0
1.0
•
•
•
•
BU34TA2WHFV
BU34TA2WNVX
3.4
±1%
200
2.5 to 5.5
40
65
6
300
20
1.0
1.0
•
•
•
•
Triple Output CMOS LDO Regulators
Output
Voltage
(V)
Output
Voltage
Accuracy
Output
Current
(mA)
Supply
Voltage
(V)
Circuit
Current
(μA)
Ripple Rejection
high speed
mode (dB)
I/O Voltage
Difference
(mV)
Load Regulation
(mV)
Input
Capacitor
(μF)
Output
Capacitor
(μF)
Shutdown
Function
Overcurrent
Protection
Circuit
Thermal
Shutdown
Circuit
Discharge
Function
BU6650NUX
2.8
2.8
1.8
±1%
±1%
±25mV
200
2.5 to 5.5
120
65
65
70
360
360
-
10
2.2
1.0
•
•
•
•
BU6651NUX
2.8
1.8
1.5
±1%
±25mV
±25mV
200
2.5 to 5.5
120
65
70
70
360
-
10
2.2
1.0
•
•
•
•
BU6652NUX
2.8
2.8
1.5
±1%
±1%
±25mV
200
2.5 to 5.5
120
65
65
70
360
360
-
10
2.2
1.0
•
•
•
•
BU6653NUX
2.8
1.8
1.8
±1%
±25mV
±25mV
200
2.5 to 5.5
120
65
70
70
360
-
10
2.2
1.0
•
•
•
•
BU665NUX SERIES
Part No.
VSON008X2030
1.888.775.ROHM
lo=10 to 100mA
www.rohmsemiconductor.com
13
CNA09017_sg
CMOS LDO Regulators
Package Dimensions
SSOP5 (SOT23-5)
HVSOF5
2.9
0.6Max. 1.2
0.95
[Unit : mm]
1 - VIN
2 - GND
3 - STBY
4 - NC
5 - VOUT
1 2 3
HVSOF5:
1 - STBY
2 - GND
3 - VIN
0.27
2
0.25
1.00
0.5
4 - NOISE
5 - GND
6 - STBY
[Unit : mm]
VCSP60N1:
SSON004X1216
VSON008X2030
1 PIN MARK
0.6Max.
(0.12)
0.6 Max
0.02
0.75
Lot No.
0.3 ± 0.1
0.8
4 3
0.5
C 0.25
Device Mark a
1.6
0.2
0.2
1.5 ± 0.1
2.0 ± 0.1
1.2
1 2 3 4
8 7 6 5
0.25
1.888.775.ROHM
0.25 +0.05
-0.04
(0.12)
0.02 +0.03
-0.02
0.08 S
[Unit : mm]
[Unit : mm]
SSON004X1216:
1.4 ± 0.1
0.65
1 2
A1 - GND B2 - VIN
A2 - STBY B1 - VOUT
3.0 ± 0.1
1 - VIN
2 - VOUT
3 - VOUT
0.5
1
0.6
1.04
[Unit : mm]
(BHxxMA3WHFV)
4 - VOUT
5 - NC
B
A
0.22
0.5
HVSOF6:
0.13
[Unit : mm]
0.21
0.75Max.
0.145
(0.15)
3.0
2.6
(1.4)
3 2 1
VCSP60N1
(1.2)
1 2 3
5
0.22
0.5
(0.45)
(1.5)
1.6
4
(0.91)
4
HVSOF6
6 5 4
0.2Max.
0.3
5
(0.41)
3
0.42
SSOP5:
0.8
1.6
2
0.13
0.05
1.25Max.
1.1
1
(0.05)
0.2Min.
4
1.6
2.8
5
1.6
1.0
1 - VOUT
2 - GND
3 - STBY
4 - VIN
VSON008X2030:
1 - VIN
2 - STBY1
3 - STBY2
4 - STBY3
www.rohmsemiconductor.com
14
5 - GND
6 - VOUT3
7 - VOUT2
8 - VOUT1
CNA09017_sg
10145 Pacific Heights Blvd., Suite 1000
San Diego, CA 92121
www.rohmsemiconductor.com | 1.888.775.ROHM
NOTE: For the most current product information, contact a ROHM sales representative in your area.
ROHM assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and
makes no representations that the circuits are free from patent infringement. Specifications subject to change without notice for the purpose
of improvement.
The products listed in this catalog are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment,
office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products
with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human
life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
© 2009 ROHM Semiconductor USA, LLC. Although every effort has been made to ensure accuracy, ROHM accepts no responsibility for
errors or omissions. Specifications and product availability may be revised without notice. No part of this document represents an offer or
contract. Industry part numbers, where specified, are given as an approximate comparative guide to circuit function only. Consult ROHM
prior to use of components in safety, health or life-critical systems. All trademarks acknowledged.
CNA09017_sg
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