qjd1210010

QJD1210010 Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Split Dual SiC
MOSFET Module
100 Amperes/1200 Volts
Y
A
AA
D
AC
AB
F
Z
DETAIL "B"
Q
Q
Q
P
1 2
3
U
4
5
6
7
8
9
Description:
Powerex Silicon Carbide MOSFET
Modules are designed for use in
high frequency applications. Each
module consists of two MOSFET
Silicon Carbide Transistors with
each transistor having a reverse
connected fast recovery free-wheel
silicon carbide Schottky diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
10 11 12
X
B
M
N
E
G
DETAIL "B"
20 19 18 17
16 15 14 13
L
T
S
R
W
DETAIL "A"
V
H
K
C
T
DETAIL "A"
D2 (4 - 6)
D1 (10 - 12)
G2 (19 - 20)
G1 (15 - 16)
S2 (17 - 18)
S1 (13 - 14)
S2 (1 - 3)
S1 (7 - 9)
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.32
109.8
Q
0.449
11.40
B
2.21
56.1
R
0.885
22.49
C
0.71
18.0
S
1.047
26.6
D
3.70±0.02
94.0±0.5
T
0.15
3.80
E
2.026
51.46
U
0.16
4.0
F
3.17
80.5
V
0.30
7.5
G
1.96
49.8
W
0.045
1.15
H
1.00
25.5
X
0.03
0.8
K
0.87
22.0
Y
0.16
4.0
L
0.266
6.75
Z
M
0.26
6.5
AA
0.17 Dia.
0.47
4.3 Dia.
12.1
N
0.59
15.0
AB
0.10 Dia.
2.5 Dia.
P
0.586
14.89
AC
0.08 Dia.
2.1 Dia.
Features:
£ Junction Temperature: 175°C
£ Silicon Carbide Chips
£ Low Internal Inductance
£ Industry Leading RDS(on)
£ High Speed Switching
£ Low Switching Losses
£ Low Capacitance
£ Low Drive Requirement
£ Fast 100A Free Wheeling
Schottky Diode
£ High Power Density
£ Isolated Baseplate
£ Aluminum Nitride Isolation
£ 2 Individual Switches
per Module
£ Copper Baseplate
£ RoHS Compliant
Applications:
£ Energy Saving Power
Systems such as:
Fans; Pumps; Consumer
Appliances
£ High Frequency Type Power
Systems such as:
UPS; High Speed Motor Drives;
Induction Heating; Welder;
Robotics
£ High Temperature Power
Systems such as:
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
12/30/14 Rev. 5
Power Electronics in Electric
Vehicle and Aviation Systems
1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
SymbolQJD1210010 Units
Drain-Source Voltage (G-S Short)
VDSS1200 Volts
Gate-Source Voltage
VGSS
Drain Current (Continuous) at TC = 150°C
Drain Current (Pulsed)*
ID
-5 / +25
Volts
100Amperes
ID(pulse)250Amperes
Maximum Power Dissipation (TC = 25°C, Tj < 175°C)
PD 1080Watts
Junction Temperature
Tj
-40 to 175
°C
Storage Temperature
Tstg
-40 to 150
°C
Mounting Torque, M6 Mounting Screws
—
40
in-lb
Module Weight (Typical)
—
270
Grams
V Isolation Voltage
VRMS3000 Volts
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2
12/30/14 Rev. 5
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
MOSFET Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 50μA, VGS = 0
1200
—
—
Volts
Zero Gate Voltage Drain Current**
IDSS
VGS = 0, VDS = 1200V
—
0.35
2.6
mA
Zero Gate Voltage Drain Current**
IDSS
VGS = 0, VDS = 1200V, Tj = 175°C
—
0.40
4.0
mA
Gate Leakage Current
IGSS
VDS = 0, VGS = 20V
—
—
1.5
µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 10mA
1.5
2.5
5.0
Volts
VDS = VGS, ID = 10mA, Tj = 175°C
1.0
1.7
5.0
Volts
Drain-Source On Resistance
RDS(on)
ID = 100A, VGS = 20V
—
15
25
mΩ
ID = 100A, VGS = 20V, Tj = 175°C
—
20
32
mΩ
VDD = 800V, ID = 100A
—
140
—
nC
Gate to Source Charge
Qgs
Gate to Drain Charge
Qgd
VDD = 800V, ID = 100A
—
220
—
nC
Total Gate Charge
QG
VCC = 800V, IC = 100A, VGS = -5/20V
—
500
—
nC
Body Diode Forward Voltage
VSD
IF = 50A, VGS = -5V
Volts
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
VDD = 800V, ID = 100A, tr
VGS = -2/20V, td(off)
RG = 6.8Ω
—
tf
Inductive Load
—
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0, VDS = 800V, f = 1MHz
—
4.0
—
—
10.2
— nF
—
1.0
—
—
0.1
— nF
nF
—
17.2
—
ns
—
13.6
—
ns
62
—
ns
35.6—
ns
**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
12/30/14 Rev. 5
3
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Diode Forward Voltage
VFM
Diode Capacitive Charge
QC
Test Conditions
Min.
Typ.
Max.
Units
IF = 100A, VGS = -5V
—
1.6
2.0
Volts
IF = 100A, VGS = -5V, Tj = 175°C
—
2.5
3.2
Volts
VR = 1200V, IF = 100A, di/dt = 4000A/μs
—
550
—
nC
Max.
Units
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction-to-Case
Rth(j-c)
MOSFET Part
—
—
0.138
°C/W
Thermal Resistance, Junction-to-Case
Rth(j-c)
Diode Part
—
—
0.243
°C/W
Contact Thermal Resistance
Rth(c-s)
Per 1/2 Module, Thermal Grease Applied
—
0.04
—
°C/W
Lint
MOSFET Part
—
Internal Inductance
10—
nH
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4
12/30/14 Rev. 5
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 25ºC)
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 175ºC)
600
500
VGE = 20V
VGE = 20V
500
DRAIN CURRENT, ID, (AMPERES)
DRAIN CURRENT, ID, (AMPERES)
Tj = 25°C
18
400
16
300
14
200
12
10
100
0
0
4
8
12
16
12
200
10
100
0
8
12
16
TRANSFER CHARACTERISTICS
(TYPICAL)
NORMALIZED ON-RESISTANCE
VS. TEMPERATURE
2.0
Tj = 25°C
Tj = 175°C
300
200
100
0
4
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
NORMALIZED ON-RESISTANCE
DRAIN CURRENT, ID, (AMPERES)
14
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
400
0
16
300
0
20
18
400
5
10
15
GATE SOURCE VOLTAGE, VGS, (VOLTS)
20
20
VGS = 20V
1.6
1.2
0.8
0.4
0
0
50
100
150
200
JUNCTION TEMPERATURE, Tj, (°C)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
12/30/14 Rev. 5
5
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
TYPICAL CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
GATE CHARGE VS. VGE
50nF
CAPACITANCE, Ciss, Coss, Crss
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
VGS = 20V
f = 1MHz
Ciss
5nF
Coss
500pF
Crss
50pF
0
200
400
600
800
16
12
8
4
0
1000
ID = 100A
0
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
Vf = 25°C
Vf = 150°C
Vf = 175°C
100
50
0
1
2
FORWARD VOLTAGE, VF, (VOLTS)
3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
FORWARD CURRENT, IF, (μA)
200
0
200 300
400
500
600
GATE CHARGE, QG, (nC)
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
150
100
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MOSFET)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.138°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6
12/30/14 Rev. 5
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.243°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
12/30/14 Rev. 5
7