HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR (BOTTOM SIDE METAL) • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009. C G PACKAGING AVAILABILITY PART NUMBER HGTG20N120E2 PACKAGE TO-247 BRAND E G20N120E2 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Breakdown Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching SOA at TC = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (0.125" from case for 5 seconds) Short Circuit Withstand Time (Note 2) At VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: HGTG20N120E2 1200 1200 UNITS V V 34 20 100 ±20 ±30 100A at 0.8 BVCES 150 1.20 -55 to +150 260 A A A V V W W/oC oC oC 3 15 µs µs 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PEAK) = 720V, TC = +125oC, RGE = 25Ω HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1995 3-98 File Number 3370.2 Specifications HGTG20N120E2 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage SYMBOL BVCES ICES VCE(SAT) TEST CONDITIONS IC = 250µA, VGE = 0V MIN TYP MAX UNIT 1200 - - V VCE = BVCES TC = +25oC - - 250 µA VCE = 0.8 BVCES TC = +125oC - - 1.0 mA IC = IC90, VGE = 15V TC = +25oC - 2.9 3.5 V TC = +125oC - 3.0 3.6 V TC = +25oC - 3.1 3.8 V - 3.3 4.0 V 3.0 4.5 6.0 V IC = IC90, VGE = 10V TC = +125oC TC = +25oC VGE(TH) IC = 500µA, VCE = VGE Gate-Emitter Leakage Current IGES VGE = ±20V - - ±250 nA Gate-Emitter Plateau Voltage VGEP IC = IC90, VCE = 0.5 BVCES - 7.0 - V IC = IC90, VCE = 0.5 BVCES VGE = 15V - 110 150 nC VGE = 20V - 150 200 nC RL = 48Ω IC = IC90, VGE = 15V, VCE = 0.8 BVCES, RG = 25Ω, TJ = +125oC - 100 - ns - 150 - ns - 520 620 ns tFI - 780 1000 ns Turn-Off Energy (Note 1) WOFF - 7.0 - mJ Current Turn-On Delay Time tD(ON) - 100 - ns - 150 - ns - 420 520 ns tFI - 780 1000 ns Turn-Off Energy (Note 1) WOFF - 7.0 - mJ Thermal Resistance RθJC - 0.70 0.83 oC/W Gate-Emitter Threshold Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Current Rise Time Current Turn-Off Delay Time Current Fall Time QG(ON) tD(ON) tR tD(OFF)I L = 50µH RL = 48Ω IC = IC90, VGE = 10V, VCE = 0.8 BVCES, RG = 25Ω, TJ = +125oC tR tD(OFF)I L = 50µH NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3-99 HGTG20N120E2 Typical Performance Curves FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL) FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 4. FALL TIME AS A FUNCTION OF COLLECTOREMITTER CURRENT FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260) 3-100 HGTG20N120E2 Typical Performance Curves (Continued) FIGURE 7. SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 8. TURN-OFF SWITCHING LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 9. TURN-OFF DELAY AS A FUNCTION OF COLLECTOREMITTER CURRENT FIGURE 10. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT AND VOLTAGE FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE 3-101 HGTG20N120E2 Test Circuit L = 50µH 1/RG = 1/RGEN + 1/RGE VCC 960V RGEN = 50Ω + - 20V RGE = 50Ω 0V FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT Operating Frequency Information Handling Precautions for IGBTs Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (Pd - Pc)/ WOFF. The allowable dissipation (Pd) is defined by Pd = (TJMAX - TC)/RθJC. The sum of device switching and conduction losses must not exceed Pd. A 50% duty factor was used (Figure 10) and the conduction losses (Pc) are approximated by Pc = (VCE • ICE)/2. WOFF is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The switching power loss (Figure 10) is defined as fMAX2 • WOFF . Turn-on switching losses are not included because they can be greatly influenced by external circuit conditions and components. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “† ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. † Trademark Emerson and Cumming, Inc. 3-102