DATASHEET

HS-2520RH
TM
Data Sheet
July 2001
Radiation Hardened Uncompensated,
High Slew Rate Operational Amplifier
File Number
3599.3
Features
• Electrically Screened to SMD # 5962-95685
The HS-2520RH is a radiation hardened monolithic
operational amplifier which delivers an unsurpassed
combination of specifications for slew rate, bandwidth and
settling time. This dielectrically isolated amplifier is designed
for closed loop gains of 3 or greater without external
compensation. In addition, this high performance component
also provides low offset current and high input impedance.
The 100V/µs (Min) slew rate and fast settling time of this
amplifier makes it an ideal component for pulse amplification
and data acquisition designs. To insure compliance with slew
rate and transient response specifications, all devices are
100% tested for AC performance characteristics over full
temperature. This device is a valuable component for RF
and video circuitry requiring wideband operation. For
accurate signal conditioning designs, the HS-2520RH
superior dynamic specifications are complemented by 25nA
(Max) offset current and offset voltage trim capability.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95685. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
• QML Qualified per MIL-PRF-38535 Requirements
• High Slew Rate . . . . . . . . . . .100V/µs Min, 120V/µs (Typ)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz (Min)
• Wide Gain Bandwidth . . . . . . . 10MHz Min, 20MHz (Typ)
• High Input Impedance . . . . . . . . 50MΩ Min, 100MΩ (Typ)
• Low Offset Current . . . . . . . . . . . . . 25nA Min, 10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max)
• Gamma Dose . . . . . . . . . . . . . . . . . . . . . . 1 x 104RAD(Si)
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplifiers
Ordering Information
INTERNAL
MKT. NUMBER
ORDERING NUMBER
TEMP. RANGE
(oC)
HS0-2520RH-Q
HS0-2520RH-Q
25
5962D9568501VGA
HS2-2520RH-Q
-55 to 125
5962D9568501VPA
HS7-2520RH-Q
-55 to 125
5962D9568501VPC
HS7B-2520RH-Q
-55 to 125
Pinouts
HS7-2520RH (CERDIP) GDIP1-T8
OR
HS7B-2520RH (SBDIP) CDIP2-T8
TOP VIEW
HS2-2520RH (CAN) MACY1-X8
TOP VIEW
COMP
BAL
1
-IN
2
+IN
3
V-
8
+
4
COMP
7
V+
6
OUT
5
8
BAL
IN-
1
7
-
2
V+
6
+
OUT
BAL
IN+
5
3
BAL
4
V-
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001, All Rights Reserved
HS-2520RH
Timing Waveforms
VIN
VOUT
+
-
50
1.33K
50pF
667
FIGURE 1. SIMPLIFIED TEST CIRCUIT
+1.67V
+67mV
INPUT
0V
INPUT
-67mV
0V
-1.67V
+5V
OVERSHOOT
75%
+200mV
90%
OUTPUT
10%
∆V
OUTPUT
25%
-5V
∆T
SLEW
RATE
= ∆V/∆T
0V
RISE TIME
FIGURE 2. SLEW RATE WAVEFORM
FIGURE 3. TRANSIENT RESPONSE WAVEFORM
NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, Unless Otherwise Specified
120
100
VS = ±15
EQUIVALENT INPUT NOISE (µV)
CURRENT (nA)
100
BIAS CURRENT
80
60
40
20
OFFSET CURRENT
0
-20
-50
-55
-25
0
25
50
75
100
TEMPERATURE (oC)
FIGURE 4. INPUT BIAS AND OFFSET CURRENT vs
TEMPERATURE
2
125
10K SOURCE RESISTANCE
10
0 SOURCE RESISTANCE
1.0
THERMAL NOISE OF 10K RESISTOR
0.1
100Hz
1kHz
10kHz
100kHz
1MHz
UPPER 3dB FREQUENCY, LOWER 3dB FREQUENCY (10Hz)
FIGURE 5. EQUIVALENT INPUT NOISE vs BANDWIDTH
HS-2520RH
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, Unless Otherwise Specified (Continued)
120
VS = ±15
OPEN LOOP VOLTAGE GAIN (dB)
NORMALIZED PARAMETERS
REFFERED TO VALUES AT ±25oC
1.3
1.2
1.1
SLEW RATE
BANDWIDTH
1.0
SLEW RATE
BANDWIDTH
0.9
0.8
-50
-55
-25
0
25
50
75
100
PHASE
60
40
GAIN
20
0
10
125
100
1K
TEMPERATURE (oC)
10K
100K
1M
10M
100M
FREQUENCY (Hz)
FIGURE 6. NORMALIZED AC PARAMETERS vs TEMPERATURE
FIGURE 7. OPEN-LOOP FREQUENCY AND PHASE RESPONSE
120
OPEN LOOP VOLTAGE GAIN (dB)
1.1
NORMALIZED PARAMETERS
REFERRED TO VALUES AT ±15V
80
-20
0.7
SLEW RATE
BANDWIDTH
1.0
BANDWIDTH
SLEW RATE
0.9
100
0pF
80
30pF
60
40
100pF
20
300pF
0
1000pF
-20
0.8
±10
±15
SUPPLY VOLTAGE
10
±20
35
PEAK-TO-PEAK VOLTAGE SWING
VS = ±20
86
VS = ±15
85
VS = ±10
1K
10K
100K
1M
10
FIGURE 9. OPEN-LOOP FREQUENCY RESPONSE FOR
VARIOUS VALUES OF CAPACITORS FROM
BANDWIDTH CONTROL PIN TO GROUND
88
87
100
FREQUENCY (Hz)
FIGURE 8. NORMALIZED AC PARAMETERS vs SUPPLY
VOLTAGE AT 25oC
GAIN (dB)
100
84
83
82
VS = ±20
30
25
VS = ±15
20
15
VS = ±10
10
5
0
-50
-55
-25
0
25
50
75
100
125
TEMPERATURE (oC)
FIGURE 10. OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE
3
10K
100K
1MEG
10MEG
FREQUENCY (Hz)
FIGURE 11. OUTPUT VOLTAGE SWING vs FREQUENCY
AT 25oC
10M
HS-2520RH
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, Unless Otherwise Specified (Continued)
4.8
RL = 2kΩ
CL = 50pF
CURRENT (nA)
4.6
4.4
VS = ±20
UPPER TRACE: INPUT; 1.67V/DIV 10
LOWER TRACE: OUTPUT; 5V/DIV
VS = ±15
4.2
VS = ±10
4.0
3.8
TA = 25oC
VS = +15V
3.6
-25
0
25
50
75
100
125
TEMPERATURE (oC)
HORIZONTAL = 100ns/DIV
FIGURE 12. POWER SUPPLY CURRENT vs TEMPERATURE
FIGURE 13. VOLTAGE FOLLOWER PULSE RESPONSE
1000
INPUT NOISE VOLTAGE (nV√Hz)
120
POWER SUPPLY
REJECTION RATIO (dB)
100
80
60
NEGATIVE SUPPLY
POSITIVE SUPPLY
40
20
0
100kHz
10
INPUT NOISE CURRENT
10
100
INPUT NOISE VOLTAGE
10
1
1
1kHz
10kHz
100kHz
1MHz
0.1
1
10
100
1K
10K
100K
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 14. POWER SUPPLY REJECTION RATIO vs
FREQUENCY
FIGURE 15. INPUT NOISE DENSITY vs FREQUENCY
Suggested VOS Adjustment
V+
20kΩ
RT
IN
BAL
OUT
V-
NOTE: Tested offset adjustment range is | VOS +1mV | minimum referred to output. Typical range is +20mV to -18mV with RT = 20kΩ.
4
INPUT NOISE CURRENT (pA√Hz)
-50
-55
HS-2520RH
Burn-In Circuits
HS7-2520 CERDIP
HS2-2520 METAL CAN
V+
C3
C1
8
1
2
R1
3
1
6
7
V+
7
+
4
VD2
8
C1
-
2
D1
6
+
C3
5
5
3
C2
4
R1
C2
D2
V-
NOTES:
NOTES:
1. R1 = 1MΩ, ±5%, 1/4W (Min)
6. R1 = 1MΩ, ±5%, 1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
7. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. C3 = 0.01µF (±10%)/Socket
8. C3 = 0.01µF (±10%)/Socket
4. D1 = D2 = 1N4002 or equivalent (per board)
9. D1 = D2 = 1N4002 or equivalent (per board)
5. |(V+) - (V-)| = 31V
10. |(V+) - (V-)| = 31V
Irradiation Circuits
IRRADIATION CIRCUIT
C
1 BAL
COMP 8
V+
1MΩ -5% (1/4W MIN)
V2
VC
NOTES:
11. V1 = +15V ±10%
12. V2 = -15V ±10%
13. C = 0.1µF ±10%
5
2 -IN
V1
7
3 +IN
OUT 6
4
BAL 5
C
D1
HS-2520RH
Schematic Diagram
OFFSET
OFFSET
V+
R21
200
Q30
R2B
200
R2A
1.8K
R2B
1.8K
R20
200
R12
2K
R11
4K
Q29
Q28
R2A
200
Q15
R13
2K
Q3A
Q3B
R16
960
Q4A
Q4B
R17
30
Q13B
Q27
BW
CONTROL
Q12A
Q23
C1
1pF
Q16
R9
1.1K
Q8
OUTPUT
R18
30
Q11B
Q12B
Q13A
R15
11.13K
Q1A
+INPUT
Q2A
Q17
Q1B
R1A
1.68K
R1B
1.68K
Q11A
Q7
Q2B
Q24
Q21A
R6A
3K
Q31
Q25
Q21B
Q22
Q6
Q9
R6B
3K
Q5B
Q5A
Q26
Q10
Q14
Q18
Q19
R3A
1.48K
R3B
1.48K
R19
1.48K
R10
740
Q20
V-INPUT
6
HS-2520RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
67 mils x 57 mils x 19 mils
(1700µm x 1440µm x 483µm)
INTERFACE MATERIALS:
Substrate Potential (Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Glassivation:
Type: Nitride (Si3N4) over Silox (Si02, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Worst Case Current Density:
0.26 x 105 A/cm 2
Transistor Count:
Top Metallization:
40
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
Substrate:
Bipolar Dielectric Isolation
Backside Finish:
Silicon
Metallization Mask Layout
HS-2520RH
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However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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