5962-95669

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Make changes to the Output current test with conditions of VOUT = +10 V and
-10 V as specified under Table I.
Changes in accordance with N.O.R. 5962-R264-97.
97-04-04
R. MONNIN
B
Make changes to 1.2 and 1.3. Redrawn. - ro
99-06-30
R. MONNIN
C
Add a dose rate footnote under paragraph 1.5 and Table I.
Delete paragraphs 4.4.4.2, 4.4.4.3, and 6.7. - ro
05-10-05
R. MONNIN
D
Add device type 02. Add paragraph 3.2.3. Make clarification to footnote 1/ as
specified under Table IIA. Delete paragraphs 4.4.4.1.1 and 4.4.4.2.
Delete figure 2 radiation exposure circuit and references to device M
requirements. - ro
15-02-25
C. SAFFLE
REV
SHEET
REV
SHEET
REV STATUS
REV
D
D
D
D
D
D
D
D
D
D
D
D
D
OF SHEETS
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PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
MICHAEL FRYE
DRAWING APPROVAL DATE
95-11-09
REVISION LEVEL
D
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, SAMPLE AND HOLD AMPLIFIER,
MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-95669
1 OF 13
5962-E194-15
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
95669
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
C
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-2420RH
02
HS-2420EH
Circuit function
Radiation hardened, dielectrically isolated (D.I.)
sample and hold amplifier
Radiation hardened, D.I. sample and hold amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
Descriptive designator
Terminals
GDIP1-T14 or CDIP2-T14
14
Package style
Dual in line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95669
A
REVISION LEVEL
D
SHEET
2
1.3 Absolute maximum ratings. 1/
Voltage between +VS and -VS ................................................................................... +40 V
Differential input voltage (VIND) ................................................................................. 24 V
Digital input voltage ( S /H pin) .................................................................................. +8 V, -15 V
Output current ............................................................................................................ Short circuit protected
Maximum package dissipation (PD) at TA = +125C ................................................. 0.67 W 2/
Junction temperature (TJ) .......................................................................................... +175C
Storage temperature range ....................................................................................... -65C to +150C
Lead temperature (soldering, 10 seconds) ................................................................ +275C
Thermal resistance, junction-to-case (JC) ................................................................ 20C/W
Thermal resistance, junction-to-ambient (JA) ........................................................... 75C/W
1.4 Recommended operating conditions.
Supply voltage range (VS) ....................................................................................... 15 V
Analog input voltage .................................................................................................. 10 V
Low input voltage (VIL) .............................................................................................. 0 V to 0.8 V, maximum
High input voltage (VIH) ............................................................................................. 2.0 V to 5.0 V
Ambient operating temperature range (TA) ............................................................... -55C to +125C
1.5 Radiation features:
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01 ........................................................................................................ 100 krads(Si) 3/
Device type 02 ....................................................................................................... 100 krads(Si) 4/
Maximum total dose available (dose rate  0.01 rads(Si)/s):
Device type 02 ...................................................................................................... 50 krads(Si) 4/
Radiation induced latch-up ........................................................................................ No latch up 5/
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/
If device power exceeds package dissipation capacity, provide heat sinking or derate linearly (the derating is based on
the JA) at the following rate : 13.3 mW/C.
3/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A to a maximum total dose of 100 krads(Si) .
4/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total
dose of 50 krads(Si).
5/ Device types 01 and 02 use dielectrically isolated (DI) technology and latch up is physically not possible.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95669
A
REVISION LEVEL
D
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Timing waveforms. The timing waveforms shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95669
A
REVISION LEVEL
D
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Input offset voltage
Symbol
Conditions 1/ 2/
-55C  TA  +125C
unless otherwise specified
Group A
subgroups
M,D,P,L,R
Input bias current
M,D,P,L,R
M,D,P,L,R
Input offset current
+AVS
VOUT = +10 V, RL = 2 k,
VOUT = -10 V, RL = 2 k,
CL = 50 pF
M,D,P,L,R
Common mode rejection
ratio
-CMRR
+6
1
-6
+6
-200
+200
2,3
-400
+400
1
-400
+400
-200
+200
2,3
-400
+400
1
-400
+400
-50
+50
2,3
-100
+100
1
-100
+100
1,2,3
CL = 50 pF
M,D,P,L,R
-AVS
-6
1
IIO
M,D,P,L,R
Open loop voltage gain
2,3
1
-IIB
01,02
01,02
01,02
01,02
01,02
25
1
25
1,2,3
25
1
25
1,2,3
+VS = 25 V, -VS = -5 V,
Unit
Max
+4
1
+IIB
Limits
Min
-4
1
VIO
Device
type
01,02
mV
nA
nA
kV/V
80
dB
VOUT = +10 V,
VS/H = 10.8 V
M,D,P,L,R
+CMRR
+VS = 5 V, -VS = -25 V,
1
80
1,2,3
80
1
80
VOUT = -10 V,
VS/H = 9.2 V
M,D,P,L,R
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
SIZE
5962-95669
A
REVISION LEVEL
D
SHEET
5
TABLE I. Electrical performance characteristics – Continued.
Test
Output current
Symbol
+IOUT
Conditions 1/ 2/
-55C  TA  +125C
unless otherwise specified
Group A
subgroups
1
VOUT = +10 V, TA = +25C
M,D,P,L,R
-IOUT
VOUT = -10 V, TA = +25C
M,D,P,L,R
Output voltage swing
+VOP
M,D,P,L,R
-VOP
RL = 2 k, CL = 50 pF
+ICC
M,D,P,L,R
-ICC
+PSRR
-15
1
-10
01,02
TA = +25C
+VS = 10 and 20 V,
Unit
Max
mA
+10
V
+10
1,2,3
-10
1
-10
01,02
5.5
1
M,D,P,L,R
Power supply rejection
ratio
1
1
TA = +25C
Min
+15
+10
1
M,D,P,L,R
Power supply current
01,02
Limits
1
1,2,3
RL = 2 k, CL = 50 pF
Device
type
5.5
1
-3.5
1
-3.5
1,2,3
mA
01,02
80
dB
-VS = -15 and -15 V
M,D,P,L,R
-PSRR
+VS = 15 and 15 V,
1
80
1,2,3
80
1
80
-VS = -10 and -20 V
M,D,P,L,R
Digital input current
IIN1
1,2,3
VIN1 = 0 V
M,D,P,L,R
IIN2
VIN2 = 5 V
M,D,P,L,R
Digital input voltage
M,D,P,L,R
800
1
800
1,2,3
20
1
20
1,2,3
VIL
01,02
01,02
0.8
1
VIH
M,D,P,L,R
A
V
0.8
1,2,3
2.0
1
2.0
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95669
A
REVISION LEVEL
D
SHEET
6
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
ID
Drift current
Conditions 1/ 2/
-55C  TA  +125C
unless otherwise specified
Group A
subgroups
2
VIN = 0 V, RL = 2 k,
Device
type
01,02
Limits
Unit
Min
-10
Max
10
-10
10
nA
CL = 50 pF, TA = +125C,
S/H pin at 4.0 V
M,D,P,L,R
Hold mode feedthrough
attenuation
VATTEN
1
VIN = 20 VPP, AV = +1, 3/
4,5,6
01,02
70
dB
4
01,02
2.5
MHz
9
01,02
-20
20
-20
20
CL = 50 pF, RL = 2 k,
fIN = 50 kHz
Gain bandwidth product
GBWP
VIN = 100 mVPP, 3/
AV = +1, CL = 50 pF,
RL = 2 k, TA = +25C
Hold step error 4/
VERR
VS/H = 0 V and 4 V,
mV
tR(VS/H)  30 ns,
TA = +25C
M,D,P,L,R
Transient response
(rise time and fall time)
TRTR
9
9
VOUT = 200 mVPP,
01,02
100
ns
AV = +1, CL = 50 pF,
RL = 2 k, TA = +25C
M,D,P,L,R
TRTF
M,D,P,L,R
Transient response
(overshoot)
TR+OS
9
100
9
100
9
100
9
VOUT = 200 mVPP,
01,02
40
%
AV = +1, CL = 50 pF,
RL = 2 k, TA = +25C
M,D,P,L,R
TR-OS
M,D,P,L,R
9
40
9
40
9
40
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
D
SHEET
7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA  +125C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Transient response
(slew rate)
TR+SR
9
VOUT = 10 VPP,
01,02
Unit
Max
3.5
V/s
AV = +1, CL = 50 pF,
RL = 2 k, TA = +25C
M,D,P,L,R
TR-SR
M,D,P,L,R
9
2.0
9
3.5
9
2.0
VOUT = 0 V and +10 V, 3/
Acquisition time (0.1%)
+tACQ
9
AV = +1, CL = 50 pF,
01,02
s
4
RL = 2 k, TA = +25C
VOUT = 0 V and -10 V, 3/
-tACQ
4
AV = +1, CL = 50 pF,
RL = 2 k, TA = +25C
VOUT = 0 V and +10 V, 3/
Acquisition time (0.01%)
+tACQ
9
AV = +1, CL = 50 pF,
01,02
s
6
RL = 2 k, TA = +25C
VOUT = 0 V and -10 V, 3/
-tACQ
6
AV = +1, CL = 50 pF,
RL = 2 k, TA = +25C
1/
Unless otherwise specified, device tested at +VS = +15 V, -VS = -15 V, VIL = 0.8 V (sample), VIH = 2.0 V (hold),
CH = 1000 pF, and -INPUT pin tied to OUTPUT pin. See figure 2.
2/
RHA device type 01 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation. However, device type 01 is
only tested at the “R” level accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). Device type 01 may
be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and meet all
levels M, D, P, and L for condition D. However, device type 02 is only tested at the “R” level in accordance with
MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019,
condition D (see 1.5 herein).
Pre and post irradiation values are identical unless otherwise specified in table IA. When performing post irradiation
electrical measurements for any RHA level, TA = +25C.
3/
If not tested, shall be guaranteed to the limits specified in table I herein.
4/
VERR = VOUT (VS/H = 0 V) - VOUT (VS/H = 4 V).
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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8
Device types
01 and 02
Case outline
C
Terminal number
Terminal symbol
1
-INPUT
2
+INPUT
3
OFFSET ADJUST
4
OFFSET ADJUST
5
-VS
6
NC
7
OUTPUT
8
NC
9
+VS
10
NC
11
HOLD CAPACITOR
12
NC
13
GND
14
SAMPLE / HOLD CONTROL
FIGURE 1. Terminal connections.
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REVISION LEVEL
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FIGURE 2. Timing waveforms.
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3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7, 8, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95669
A
REVISION LEVEL
D
SHEET
11
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
1,9
1,9
1,2,3,4,5, 1/
6,9
1,2,3, 1/ 2/
4,5,6,9
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1,2,3,4,5,6,9
1,2,3,4,5,6,9
1,2,3
1,2,3 2/
1
1
1,2,3,9
1,2,3,9
1/ For device class Q, PDA applies to subgroup 1.
For device class V, PDA applies to subgroup 1 and deltas.
2/ Delta limits as specified in table IIB shall be required where specified,
and the delta limits shall be completed with reference to the previous
electrical parameters.
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25C.
Parameters
Symbol
Device types
Limit
Input offset voltage
VIO
01,02
2 mV
Input bias current
IIB
01,02
75 nA
Input offset current
IIO
01,02
75 nA
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table I at TA = +25C 5C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein for device types 01 and 02. In addition, for device type 02, a low dose rate
test shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95669
A
REVISION LEVEL
D
SHEET
13
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 15-02-25
Approved sources of supply for SMD 5962-95669 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R9566901VCA
3/
HS1-2420RH-Q
5962R9566901VCC
3/
HS1B-2420RH-Q
5962R9566902VCC
34371
HS1B-2420EH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.