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[ /Title
(HS1100R
H)
/Subject
(Radiation
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Ultra
High
Speed
Current
Feedback
Amplifier)
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T
1-888-IN
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier
The HS-1100RH is a radiation hardened high speed,
wideband, fast settling current feedback amplifier. Built with
Intersil’s proprietary, complementary bipolar UHF-1 (DI
bonded wafer) process, it is the fastest monolithic amplifier
available from any semiconductor manufacturer. These
devices are QML approved and are processed and screened
in full compliance with MIL-PRF-38535.
The HS-1100RH’s wide bandwidth, fast settling characteristic,
and low output impedance make this amplifier ideal for driving
fast A/D converters.
Component and composite video systems will also benefit
from this amplifier’s performance, as indicated by the
excellent gain flatness, and 0.03%/0.05 Deg. Differential
Gain/Phase specifications (RL = 75).
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-94676. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
INTERNAL
MKT. NUMBER
TEMP. RANGE
(oC)
5962F9467602VPA
HS7-1100RH-Q
-55 to 125
5962F9467602VPC
HS7B-1100RH-Q
-55 to 125
HFA1100IJ (Sample)
HFA1100IJ
-40 to 85
HFA11XXEVAL
Evaluation Board
1
August 1999
File Number
4100.2
Features
• Electrically Screened to SMD # 5962-94676
• QML Qualified per MIL-PRF-38535 Requirements
• Low Distortion (HD3, 30MHz) . . . . . . . . . . . -84dBc (Typ)
• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . . 2300V/s (Typ)
• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . . .11ns (Typ)
• Excellent Gain Flatness (to 50MHz). . . . . . . 0.05dB (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . . 65mA (Typ)
• Fast Overdrive Recovery . . . . . . . . . . . . . . . . <10ns (Typ)
• Total Gamma Dose . . . . . . . . . . . . . . . . . . . 300kRAD(Si)
• Latch Up. . . . . . . . . . . . . . . . . . . . . None (DI Technology)
Applications
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• RF/IF Signal Processing
• Flash A/D Driver
• Imaging Systems
Ordering Information
ORDERING NUMBER
HS-1100RH
Pinout
HS-1100RH
GDIP1-T8 (CERDIP)
OR CDIP2-T8 (SBDIP)
TOP VIEW
NC
1
-IN
2
+IN
3
V-
4
8
NC
-
7
V+
+
6
OUT
5
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HS-1100RH
traces connected to -IN, and connections to -IN should be
kept as short as possible.
Typical Applications
Optimum Feedback Resistor
The enclosed plots of inverting and non-inverting frequency
response illustrate the performance of the HS-1100RH in
various gains. Although the bandwidth dependency on
closed loop gain isn’t as severe as that of a voltage
feedback amplifier, there can be an appreciable decrease
in bandwidth at higher gains. This decrease may be
minimized by taking advantage of the current feedback
amplifier’s unique relationship between bandwidth and RF .
All current feedback amplifiers require a feedback resistor,
even for unity gain applications, and RF , in conjunction
with the internal compensation capacitor, sets the dominant
pole of the frequency response. Thus, the amplifier’s
bandwidth is inversely proportional to RF . The HS-1100RH
design is optimized for a 510 RF at a gain of +1.
Decreasing RF in a unity gain application decreases
stability, resulting in excessive peaking and overshoot. At
higher gains the amplifier is more stable, so RF can be
decreased in a trade-off of stability for bandwidth.
An example of a good high frequency layout is the
Evaluation Board shown in Figure 2.
Driving Capacitive Loads
Capacitive loads, such as an A/D input, or an improperly
terminated transmission line will degrade the amplifier’s
phase margin resulting in frequency response peaking and
possible oscillations. In most cases, the oscillation can be
avoided by placing a resistor (RS) in series with the output
prior to the capacitance.
Figure 1 details starting points for the selection of this
resistor. The points on the curve indicate the RS and CL
combinations for the optimum bandwidth, stability, and
settling time, but experimental fine tuning is recommended.
Picking a point above or to the right of the curve yields an
overdamped response, while points below or left of the curve
indicate areas of underdamped performance.
The table below lists recommended RF values for various
gains, and the expected bandwidth.
50
45
RF ()
BANDWIDTH
(MHz)
-1
430
580
+1
510
850
+2
360
670
+5
150
520
+10
180
240
+19
270
125
40
AV = +1
35
RS ()
GAIN
(ACL)
30
25
20
15
10
5 A = +2
V
0
0
40
80
120
160
200
240
280
320
360 400
LOAD CAPACITANCE (pF)
PC Board Layout
The frequency response of this amplifier depends greatly on
the amount of care taken in designing the PC board. The
use of low inductance components such as chip
resistors and chip capacitors is strongly recommended,
while a solid ground plane is a must!
Attention should be given to decoupling the power supplies.
A large value (10F) tantalum in parallel with a small value
(0.1F) chip capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the
input and output of the device. Capacitance directly on the
output must be minimized, or isolated as discussed in the
next section.
Care must also be taken to minimize the capacitance to
ground seen by the amplifier’s inverting input (-IN). The
larger this capacitance, the worse the gain peaking, resulting
in pulse overshoot and possible instability. To this end, it is
recommended that the ground plane be removed under
2
FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs
LOAD CAPACITANCE
RS and CL form a low pass network at the output, thus
limiting system bandwidth well below the amplifier bandwidth
of 850MHz. By decreasing RS as CL increases (as illustrated
in the curves), the maximum bandwidth is obtained without
sacrificing stability. Even so, bandwidth does decrease as
you move to the right along the curve. For example, at
AV = +1, RS = 50, CL = 30pF, the overall bandwidth is
limited to 300MHz, and bandwidth drops to 100MHz at AV =
+1, RS = 5, CL = 340pF.
Evaluation Board
The performance of the HS-1100RH may be evaluated using
the HFA11XXEVAL Evaluation Board.
The layout and schematic of the board are shown in
Figure 2. To order evaluation boards, please contact your
local sales office.
HS-1100RH
VH
1
+IN
OUT
VL
V+
VGND
FIGURE 2A. TOP LAYOUT
FIGURE 2B. BOTTOM LAYOUT
500
500
VH
R1
50
IN
10F
0.1F
1
8
2
7
3
6
4
5
-5V
GND
10F
0.1F
+5V
50
OUT
GND
VL
FIGURE 2C. SCHEMATIC
FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT
Typical Performance Characteristics
Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified
PARAMETERS
CONDITIONS
TEMPERATURE
TYPICAL
UNITS
25oC
2
mV
Full
10
V/oC
Input Offset Voltage (Note 1)
VCM = 0V
Average Offset Voltage Drift
Versus Temperature
VIO CMRR
VCM = 2V
25oC
46
dB
VS = 1.25V
25oC
50
dB
+Input Current (Note 1)
VCM = 0V
25oC
25
A
Average +Input Current Drift
Versus Temperature
Full
40
nA/oC
- Input Current (Note 1)
VCM = 0V
25oC
12
A
Average -Input Current Drift
Versus Temperature
Full
40
nA/oC
+Input Resistance
VCM =2V
25oC
50
k
- Input Resistance
25oC
16

Input Capacitance
25oC
2.2
pF
Input Noise Voltage (Note 1)
f = 100kHz
25oC
4
nV/Hz
f = 100kHz
25oC
18
pA/Hz
f = 100kHz
25oC
21
pA/Hz
Input Common Mode Range
Full
3.0
V
Open Loop Transimpedance
25oC
500
k
VIO PSRR
+Input Noise Current (Note 1)
-Input Noise Current (Note 1)
AV = -1
3
HS-1100RH
Typical Performance Characteristics
(Continued)
Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified
PARAMETERS
CONDITIONS
Output Voltage
TEMPERATURE
TYPICAL
UNITS
25oC
3.3
V
AV = -1, RL = 100
Full
3.0
V
AV = -1, RL = 50
25oC to 125oC
65
mA
AV = -1, RL = 50
-55oC to 0oC
50
mA
25oC
0.1
W
Full
24
mA
AV = -1, RF = 430, VOUT = 200mVP-P
25oC
580
MHz
AV = +1, RF = 510, VOUT = 200mVP-P
25oC
850
MHz
AV = +2, RF = 360, VOUT = 200mVP-P
25oC
670
MHz
AV = +1, RF = 510, VOUT = 5VP-P
25oC
1500
V/s
AV = +2, VOUT = 5VP-P
25oC
2300
V/s
VOUT = 5VP-P
25oC
220
MHz
To 30MHz, RF = 510
25oC
0.014
dB
To 50MHz, RF = 510
25oC
0.05
dB
To 100MHz, RF = 510
25oC
0.14
dB
To 100MHz, RF = 510
25oC
0.6
Degrees
30MHz, VOUT = 2VP-P
25oC
-55
dBc
50MHz, VOUT = 2VP-P
25oC
-49
dBc
100MHz, VOUT = 2VP-P
25oC
-44
dBc
30MHz, VOUT = 2VP-P
25oC
-84
dBc
50MHz, VOUT = 2VP-P
25oC
-70
dBc
100MHz, VOUT = 2VP-P
25oC
-57
dBc
100MHz, RF = 510
25oC
30
dBm
100MHz, RF = 510
25oC
20
dBm
40MHz, RF = 510
25oC
-70
dB
100MHz, RF = 510
25oC
-60
dB
600MHz, RF = 510
25oC
-32
dB
VOUT = 0.5VP-P
25oC
500
ps
VOUT = 2VP-P
25oC
800
ps
VOUT = 0.5VP-P, Input tR/tF = 550ps
25oC
11
%
To 0.1%, VOUT = 2V to 0V, RF = 510
25oC
11
ns
To 0.05%, VOUT = 2V to 0V, RF = 510
25oC
19
ns
To 0.02%, VOUT = 2V to 0V, RF = 510
25oC
34
ns
AV = +2, RL = 75, NTSC
25oC
0.03
%
AV = +2, RL = 75, NTSC
25oC
0.05
Degrees
RF = 510, VIN = 5VP-P
25oC
7.5
ns
AV = -1, RL = 100
Output Current (Note 1)
DC Closed Loop Output Resistance
Quiescent Supply Current (Note 1)
-3dB Bandwidth (Note 1)
Slew Rate
Full Power Bandwidth
Gain Flatness (Note 1)
Linear Phase Deviation (Note 1)
2nd Harmonic Distortion (Note 1)
3rd Harmonic Distortion (Note 1)
3rd Order Intercept (Note 1)
1dB Compression
Reverse Isolation (S12)
Rise and Fall Time
Overshoot (Note 1)
Settling Time (Note 1)
Differential Gain
Differential Phase
Overdrive Recovery Time
RL = Open
NOTE:
1. See Typical Performance Curves for more information.
4
HS-1100RH
VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified
120
1.2
90
0.9
OUTPUT VOLTAGE (V)
60
30
0
-30
-60
0.6
0.3
0
-0.3
-0.6
-90
-0.9
-120
-1.2
5ns/DIV.
5ns/DIV.
GAIN
0
-3
AV = +1
-6
AV = +2
-9
AV = +6
AV = +11
-12
PHASE
0
-90
AV = +1
AV = +2
-180
AV = +6
-270
AV = +11
0.3
1
10
100
FREQUENCY (MHz)
-360
1K
RL = 100
RL = 50
RL = 50
RL = 100
-6
PHASE
RL = 1k
0
-90
-180
RL = 100
RL = 1k
0.3
1
10
100
FREQUENCY (MHz)
-270
-360
1K
FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS (AV = +1, VOUT = 200mVP-P)
5
-6
AV = -10
-9
AV = -20
-12
PHASE
180
AV = -1
90
AV = -5
0
AV = -20
0.3
GAIN (dB) NORMALIZED
GAIN
PHASE (DEGREES)
GAIN (dB)
RL = 1k
-3
AV = -1
AV = -5
1
10
100
FREQUENCY (MHz)
-90
-180
1K
FIGURE 6. INVERTING FREQUENCY RESPONSE
(VOUT = 200mVP-P)
+6
0
-3
AV = -10
FIGURE 5. NON-INVERTING FREQUENCY RESPONSE
(VOUT = 200mVP-P)
+3
GAIN
0
PHASE (DEGREES)
GAIN (dB) NORMALIZED
FIGURE 4. LARGE SIGNAL PULSE RESPONSE (AV = +2)
PHASE (DEGREES)
GAIN (dB) NORMALIZED
FIGURE 3. SMALL SIGNAL PULSE RESPONSE (AV = +2)
RL = 1k
+3
0
GAIN
-3
RL = 100
RL = 50
-6
PHASE
RL = 50
RL = 100
0
-90
RL = 1k
-180
-270
RL = 100
RL = 1k
0.3
1
10
100
FREQUENCY (MHz)
-360
PHASE (DEGREES)
OUTPUT VOLTAGE (mV)
Typical Performance Curves
1K
FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS (AV = +2, VOUT = 200mVP-P)
HS-1100RH
Typical Performance Curves
VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified
GAIN (dB) NORMALIZED
+20
GAIN (dB)
+10
0
0.160VP-P
0.500VP-P
0.920VP-P
1.63VP-P
-10
-20
-30
0.3
1
10
FREQUENCY (MHz)
100
+10
0
0.32VP-P
-10
1.00VP-P
-20
1.84VP-P
-30
3.26VP-P
1
10
100
1K
FREQUENCY (MHz)
FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES (AV = +1)
FIGURE 10. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES (AV = +2)
+20
950
+10
0
-10
BANDWIDTH (MHz)
GAIN (dB) NORMALIZED
+20
0.3
1K
(Continued)
0.96VP-P
TO
3.89VP-P
-20
-30
900
850
800
750
700
0.3
1
10
100
FREQUENCY (MHz)
-50
1K
FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES (AV = +6)
-25
0
25
50
75
100
125
TEMPERATURE (oC)
FIGURE 12. -3dB BANDWIDTH vs TEMPERATURE (AV = +1)
+2.0
DEVIATION (DEGREES)
+1.5
GAIN (dB)
0
-0.05
-0.10
-0.15
-0.20
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
1
10
FREQUENCY (MHz)
FIGURE 13. GAIN FLATNESS (AV = +2)
6
100
0
15
30
45
60
75
90
105
120
135
150
FREQUENCY (MHz)
FIGURE 14. DEVIATION FROM LINEAR PHASE (AV = +2)
HS-1100RH
Typical Performance Curves
VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified
(Continued)
40
35
INTERCEPT POINT (dBm)
SETTLING ERROR (%)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
30
25
20
15
10
5
0
-4
1
6
11
16
21
26
TIME (ns)
31
36
41
FIGURE 15. SETTLING RESPONSE (AV = +2, VOUT = 2V)
-30
-35
-40
DISTORTION (dBc)
-45
50MHz
-55
-60
30MHz
100MHz
-60
-70
-90
-110
-5
-3
-1
1
3
5
7
9
OUTPUT POWER (dBm)
11
13
15
30MHz
-5
-3
-1
1
3
5
7
9
11
13
15
OUTPUT POWER (dBm)
FIGURE 18. 3RD HARMONIC DISTORTION vs POUT
35
RF = 360
VOUT = 2VP-P
30
VOUT = 1VP-P
OVERSHOOT (%)
OVERSHOOT (%)
50MHz
-80
FIGURE 17. 2ND HARMONIC DISTORTION vs POUT
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
400
-100
-65
-70
200
300
FREQUENCY (MHz)
-50
100MHz
-50
100
FIGURE 16. 3RD ORDER INTERMODULATION INTERCEPT
(2-TONE)
-30
-40
DISTORTION (dBc)
0
46
VOUT = 0.5VP-P
VOUT = 2VP-P
25
20
RF = 360
VOUT = 1VP-P
RF = 360
VOUT = 0.5VP-P
15
RF = 510
VOUT = 2VP-P
10
5
RF = 510
VOUT = 1VP-P
RF = 510
VOUT = 0.5VP-P
0
100
200
300
400
500
600
700
800
900
1000
INPUT RISE TIME (ps)
FIGURE 19. OVERSHOOT vs INPUT RISE TIME (AV = +1)
7
100
200
300
400
500
600
700
800
900
1000
INPUT RISE TIME (ps)
FIGURE 20. OVERSHOOT vs INPUT RISE TIME (AV = +2)
HS-1100RH
VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified
24
23
22
21
20
19
18
440
480
520
560
600
FEEDBACK RESISTOR ()
640
-60
680
7
8
SUPPLY CURRENT (mA)
0
20
40
60
80
100
9
10
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
+IBIAS
VIO
-IBIAS
-60 -40 -20
TOTAL SUPPLY VOLTAGE (V+ - V-, V)
FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE
0
20 40 60 80
TEMPERATURE (oC)
100 120
300
30
3.6
275
NOISE VOLTAGE (nV/HZ)
+VOUT
3.4
3.3
3.2
| - VOUT |
3.1
3
2.9
2.8
2.7
250
25
225
200
20
175
150
15
125
100
10
75
5
ENI
eni
INIiniINI+
ini+
2.6
2.5
-60
-40
-20
45
42
39
36
33
30
27
24
21
18
15
12
9
6
3
0
FIGURE 24. VIO AND BIAS CURRENTS vs TEMPERATURE
3.7
3.5
120
FIGURE 22. SUPPLY CURRENT vs TEMPERATURE
INPUT OFFSET VOLTAGE (mV)
6
-20
TEMPERATURE (oC)
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
5
-40
BIAS CURRENTS (A)
400
0
20
40
60
80
100
120
TEMPERATURE (oC)
FIGURE 25. OUTPUT VOLTAGE vs TEMPERATURE (AV = -1,
RL = 50)
8
0
100
1K
10K
100K
FREQUENCY (Hz)
FIGURE 26. INPUT NOISE vs FREQUENCY
50
25
0
NOISE CURRENT (pA/HZ)
360
FIGURE 21. OVERSHOOT vs FEEDBACK RESISTOR (AV = +2,
tR = 200ps, VOUT = 2VP-P)
OUTPUT VOLTAGE (V)
(Continued)
25
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
SUPPLY CURRENT (mA)
OVERSHOOT (%)
Typical Performance Curves
HS-1100RH
Test Circuit
V+
+
10
ICC
0.1
510
VIN
NC
K2 = POSITION 1:
V
VIO = X
100
+
VX
X100
0.1
470pF
-
-IBIAS =
VX
50K
2
1
3
-
1K
6
DUT
100
510
100
4
K3
100K (0.01%)
-
VZ
VOUT
+
200pF
VZ
100K
+IBIAS =
7
100
510
2
K2
K2 = POSITION 2:
510
0.1
0.1
0.1
+
10
0.1
IEE
0.1
+
HA-5177
NOTES:
2. Unless otherwise noted, component value
multiplier and tolerances shall be as follows:
Resistors,  1%.
Capacitors, F 10%
V-
3. Chip Components Recommended.
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE
V+ (+5V)
V+ (+5V)
VIN
VOUT
+
RS
50
-
50
RF
2
50
VIN
-
510
V- (-5V)
V- (-5V)
AV = +1 TEST CIRCUIT
VOUT
+2.5V
90%
90%
+SR
-2.5V
10%
LARGE SIGNAL WAVEFORM
9
RF
50
360
2
50
RG
360
AV = +2 TEST CIRCUIT
+2.5V
-SR
10%
VOUT
+
RS
50
-2.5V
VOUT
+250mV
90%
90%
TR , +OS
-250mV
+250mV
TF , -OS
10%
10%
SMALL SIGNAL WAVEFORM
-250mV
HS-1100RH
Burn-In Circuit
Irradiation Circuit
HS-1100RH CERDIP
HS-1100RH CERDIP
R3
R2
R1
8
2
7
+
6
4
VD2
1
3
D4
R3
D3
R2
V+
C1
5
D1
R1
8
2
7
3
4
V-
C2
1
C2
NOTES:
NOTES:
5. R3 = 10k, 5% (Per Socket).
11. R1 = R2 = 1k, 5%.
12. R3 = 10k, 5%.
6. C1 = C2 = 0.01F (Per Socket) or 0.1F (Per Row) Min.
7. D1 = D2 = 1N4002 or Equivalent (Per Board).
14. V+ = +5.5V  0.5V.
4. R1 = R2 = 1k, 5% (Per Socket).
8. D3 = D4 = 1N4002 or Equivalent (Per Socket).
9. V+ = +5.5V 0.5V.
10. V- = -5.5V 0.5V.
10
13. C1 = C2 = 0.1F.
15. V- = -5.5V  0.5V.
-
+
6
5
D3
V+
C1
HS-1100RH
Die Characteristics
DIE DIMENSIONS:
Substrate:
63 mils x 44 mils x 19 mils 1 mil
(1600m x 1130m x 483m 25.4m)
UHF-1, Bonded Wafer, DI
ASSEMBLY RELATED INFORMATION:
INTERFACE MATERIALS:
Substrate Potential (Powered Up):
Glassivation:
Floating
Type: Nitride
Thickness: 4kÅ 0.5kÅ
ADDITIONAL INFORMATION:
Worst Case Current Density:
Top Metallization:
1.6 x 105 A/cm2
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ 0.4kÅ
Type: Metal 2: AICu (2%)
Thickness: Metal 2: 16kÅ 0.8kÅ
Transistor Count:
52
Metallization Mask Layout
HS-1100RH
+IN
-IN
V-
BAL
VL
VH
BAL
V+
OUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9001 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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