5962-97512

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Make changes to VIO, IIB, IIO, AVOL, CMRR, IOUT, ICC, CLSG, SR, tR, tF,
and OS tests as specified under TABLE I. Also make changes to
FIGURE 4. –ro
97-09-12
R. MONNIN
B
Add 3.1.1 and APPENDIX A. -ro
98-12-17
R. MONNIN
C
Drawing updated to reflect current requirements. -gt
03-01-16
R. MONNIN
D
Add enhanced low dose rate effects (ELDRS) paragraph to 1.5 and table I. rrp
05-10-14
R. MONNIN
REV
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REV STATUS
REV
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OF SHEETS
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PMIC N/A
PREPARED BY
RICK C. OFFICER
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
CHECKED BY
RAJESH R. PITHADIA
APPROVED BY
RAYMOND MONNIN
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, DUAL WIDEBAND, HIGH INPUT
IMPEDANCE UNCOMPENSATED OPERATIONAL
AMPLIFIER, MONOLITHIC SILICON
DRAWING APPROVAL DATE
97-03-20
REVISION LEVEL
D
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
1 OF
5962-97512
22
5962-E499-05
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
97512
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
X
X
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
Circuit function
HS-22620
Radiation hardened, S.O.I. dual wideband, high input
impedance, uncompensated operational amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
Terminals
See figure 1
18
Package style
Flat package
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
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A
REVISION LEVEL
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SHEET
2
1.3 Absolute maximum ratings. 1/
Voltage between +VS and -VS .................................................
Differential input voltage (VIND) ...............................................
Voltage at either input terminal ...............................................
Peak output current ................................................................
Junction temperature (TJ) .......................................................
Storage temperature range.....................................................
Lead temperature (soldering, 10 seconds) .............................
Thermal resistance, junction-to-case (θJC)..............................
Thermal resistance, junction-to-ambient (θJA).........................
+40 V
12 V
+VS to -VS
Short circuit protected
+175°C
-65°C to +150°C
+300°C
21°C/W
83°C/W
1.4 Recommended operating conditions.
Supply voltage range (±VS).....................................................
Common mode input voltage..................................................
Load resistance (RL) ...............................................................
Ambient operating temperature range (TA) .............................
±15 V
≤ 1/2 (+VS - -VS)
≥ 2 kΩ
-55°C to +125°C
1.5 Radiation features.
Neutron (20 ns pulse) .............................................................................. 3/
Maximum total dose available (dose rate = 50 – 300 rads(si)/s).............. > 300 Krads (Si) 4/
Latch-up 5/ ............................................................................................. None
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Guaranteed by process design, but not tested, unless specified in table I herein.
3/ Values to be specified when testing is required by a customer
4/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
5/ Guaranteed by process or design, not tested.
STANDARD
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A
REVISION LEVEL
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SHEET
3
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see Appendix A in this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and
herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
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REVISION LEVEL
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SHEET
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TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Input offset voltage
VIO
VCM = 0 V
Input bias current
+IIB
VCM = 0 V,
Group A
subgroups
Device
type
1, 2, 3
01
Min
-6
-6
6
01
-50
50
2, 3
-175
175
1
-400
400
1
-50
50
2, 3
-175
175
-400
400
-75
75
2, 3
-200
200
1
-300
300
M, D, P, L, R, F
1
1
Limits
Unit
Max
6
mV
nA
+RS = 100 kΩ, -RS = 100 Ω
M, D, P, L, R, F
-IIB
VCM = 0 V,
+RS = 100 Ω, -RS = 100 kΩ
M, D, P, L, R, F
Input offset current
IIO
1
VCM = 0 V,
01
nA
+RS = 100 kΩ, -RS = 100 kΩ
M, D, P, L, R, F
Large signal voltage gain
+AVOL
4
VOUT 0 V and +10 V,
01
80
kV/V
RL = 2 kΩ
5, 6
M, D, P, L, R, F
-AVOL
VOUT 0 V and -10 V,
60
4
40
4
80
5, 6
60
RL = 2 kΩ
M, D, P, L, R, F
Common mode rejection
ratio
CMRR
4
40
1
+VS = +5V, +25 V
01
80
-VS = -25 V, -5 V
2, 3
M, D, P, L, R, F
Output voltage swing
+VOUT
74
1
74
4, 5, 6
RL = 2 kΩ
01
10
+IOUT
4
VOUT = -10 V
M, D, P, L, R, F
-IOUT
V
-10
-VOUT
Output current
dB
VOUT = +10 V
M, D, P, L, R, F
01
15
5, 6
10
4
10
mA
4
-15
5, 6
-10
4
-10
See footnotes at end of table.
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REVISION LEVEL
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TABLE I. Electrical performance characteristics - Continued
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
1
01
Limits
Min
Quiescent power supply
current
+ICC
IOUT = 0 mA
2, 3
M, D, P, L, R, F
-ICC
M, D, P, L, R, F
Power supply rejection
ratio
+PSRR
VS = ± 5 V,
-PSRR
VS = ± 5 V,
+VS = +15 V, -VS = -10 V,
+VS = +15 V, -VS = -20 V
Differential input
resistance
Full power
bandwidth
5/
RIN
1
VCM = 0 V, RL = 2 kΩ,
mA
8
01
12
2, 3
16
1
16
1
+VS = +10 V, -VS = -15 V,
+VS = +20 V, -VS = -15 V
Max
6
8
1
IOUT = 0 mA 4/
Unit
01
mA
80
2, 3
75
1
80
2, 3
75
dB
4
01
65
MΩ
4
01
400
kHz
10
V/V
CL = 50 pF, TA = +25°C
5/ 6/
FPBW
VPEAK = 10 V, RL = 2 kΩ,
CL = 50 pF, TA = +25°C
Minimum closed
5/
loop stable gain
Output short circuit 5/
current
CLSG
RL = 2 kΩ, CL = 50 pF
4, 5, 6
01
+ISC
VOUT = 1 V, RL = 10 Ω,
1
01
CL = 50 pF
-ISC
50
2
45
3
60
VOUT = -1 V, RL = 10 Ω,
1
-50
CL = 50 pF
2
-45
RL = 10 Ω, CL = 50 pF,
4
01
30
Ω
1, 2, 3
01
240
mW
3
Output resistance
5/
ROUT
mA
-60
Open loop, TA = +25°C
Quiescent power 5/ 7/
consumption per op amp
PC
VOUT = 0 V, IOUT = 0 mA
See footnotes at end of table.
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MICROCIRCUIT DRAWING
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REVISION LEVEL
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TABLE I. Electrical performance characteristics - Continued
Test
Slew rate
Symbol
8/
+SR
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
9, 10
01
VOUT = -5 V to +5 V,
RL = 2 kΩ, CL = 50 pF,
RS = 50 Ω, AVCL = +10 V/V
Min
20
11
M, D, P, L, R, F
-SR
9
M, D, P, L, R, F
8/
tR
9
M, D, P, L, R, F
tF
VOUT = 0 mV to -400 mV,
RL = 2 kΩ, CL = 50 pF,
RS = 50 Ω, AVCL = +10 V/V
measured at 20% and 80%
points
M, D, P, L, R, F
Overshoot
1/
2/
3/
4/
5/
6/
7/
8/
8/
+OS
VOUT = 0 mV to +400 mV,
RL = 2 kΩ, CL = 50 pF,
RS = 50 Ω, AVCL = +10 V/V
-OS
VOUT = 0 mV to -400 mV,
RL = 2 kΩ, CL = 50 pF,
RS = 50 Ω, AVCL = +10 V/V
V/µs
20
15
15
9
VOUT = 0 mV to +400 mV,
RL = 2 kΩ, CL = 50 pF,
RS = 50 Ω, AVCL = +10 V/V
measured at 20% and 80%
points
Max
15
+SR
11
Rise and fall time
Unit
15
9, 10
VOUT = +5 V to -5 V,
RL = 2 kΩ, CL = 50 pF,
RS = 50 Ω, AVCL = +10 V/V
Limits
01
150
10, 11
200
9
200
9
150
10, 11
200
9
ns
200
9, 10, 11
01
70
%
70
Unless otherwise specified, VS = ±15 V, source resistance (RS) = 100 Ω, RL = 500 kΩ, and VOUT = 0 V.
Devices supplied to this drawing meet all levels M, D, P, L, R, and F of irradiation, however, this device is only tested
at the F level. When performing post irradiation measurements for any RHA level, TA = +25°C. Pre and post irradiation
values are identical unless otherwise specified in table I.
These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
-ICC is tested with -VSA and -VSB externally tied together.
This parameter is controlled via design or process parameters and is not directly tested at final production.
Full power bandwidth guaranteed based on slew rate measurement using FPBW = slew rate / (2 x π x VPEAK).
Quiescent power consumption based upon quiescent supply current test maximum. (No load on outputs).
See figure 4.
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REVISION LEVEL
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FIGURE 1. Case outline X.
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Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
A
---
.115
---
2.92
b
.015
.019
.38
.48
5,11,12
c
.004
.007
.10
.18
5,11,12
D
.430
.450
10.92
11.43
4
E
.320
.340
8.13
8.64
E1
.910
.950
23.11
24.13
E2
.220
.240
5.59
6.10
E3
.030
---
.76
---
e
.050 BSC
7
1.27 BSC
9,10
k
.008
.015
.20
.38
3
L
.280
.320
7.11
8.13
Q
.026
.040
.66
1.02
8
S1
.000
---
.00
---
6,13
Notes:
1
The U.S. Government preferred system of measurement is the metric S.I. system. However, since this item was
originally designed using inch-pound units of measurements, in the event of conflict between the metric and
inch-pound units, the inch-pound units shall take precedence.
2
Index area: A terminal 1 identification mark shall be located adjacent to pin one on the top (lid) side within the
shaded area shown. Terminal numbers shall increase in a counterclockwise direction when viewed from the top
of the device. The manufacturer's identification shall not be used as a pin one identification mark. Alternatively, a
tab (dimension k) may be used to identify pin one.
3
If a pin one identification mark is used in addition to a tab, only the maximum limit of dimension k applies.
4
This dimension allows for off-center lid, meniscus, and glass overrun.
5
18 places.
6
Measure dimension S1 at all four corners.
7
For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package
to cover the leads.
8
Dimension Q shall be measured at that point of exit (beyond the meniscus) of the lead from the body.
Dimension Q minimum shall be reduced by .0015 inch maximum when solder dip lead finish is applied.
9
16 places.
10
Basic dimension (BSC).
11
(For information only) increase maximum limit by .003" when solder dip or tin plate lead finish applies.
12
Lead finish shall be as specified in 1.2.5 herein.
13
This dimension includes braze pads.
FIGURE 1. Case outline X - Continued.
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Device type
01
Case outline
X
Terminal number
Terminal symbol
1
BALANCE 2A
2
BALANCE 1A
3
+INPUT A
4
-INPUT A
5
NC
6
-INPUT B
7
+INPUT B
8
BALANCE 1B
9
BALANCE 2B
10
+VS B
11
-VS B
12
OUTPUT B
13
COMPENSATION B
14
NC
15
COMPENSATION A
16
OUTPUT A
17
-VS A
18
+VS A
NC = No connection
FIGURE 2. Terminal connection.
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NOTES:
1. V1 = +15 V ±0.5 V and V2 = -15 V ±0.5 V.
2. R1 = 2.2 kΩ, 1/8 W minimum (5 %) and R2 = 50 Ω, 1/8 W minimum (2 %).
3. C1 = 0.1 µF, ±10 %, one cap per V per socket.
FIGURE 3. Radiation exposure circuit.
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NOTE: Measurements made on both positive and negative transitions. No capacitance on compensation pin.
Stray capacitance should be minimized.
FIGURE 4. Timing diagrams.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B or as modified in the device manufacturer’s Quality Management (QM) plan.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
STANDARD
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
1,9
Group A test
requirements (see 4.4)
Device
class Q
1,9
Device
class V
1,9
1,2,3,4,5,6, 1/
9,10,11
1,2,3,4,5,6 1/
9,10,11
1,2,3,4,5,6,9,
10,11 1/ 2/
1,2,3,4,5,6,9,10,11
1,2,3,4,5,6,
9,10,11
1,2,3,4,5,6,
9,10,11
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,5,6 2/
1,4,9
1,4,9
1,4,9
1,4,9
1,4,9
1,4,9
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1/ PDA applies to subgroup 1. For class V to subgroup 1 and ∆.
2/ Delta limits (see table IIB) shall be required and the delta values shall be computed with
reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and life test delta parameters (+25°C).
Parameters
Symbol
Delta limits
Input offset voltage
VIO
±2 mV
Positive input bias current
+IIB
±20 nA
Negative input bias current
-IIB
±20 nA
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4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 condition A and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than
5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the preirradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Neutron testing. Neutron testing shall be performed in accordance with test method 1017 of MIL-STD-883 and herein
(see 1.5). All device classes must meet the post irradiation end-point electrical parameter limits as defined in table I, for the
12
2
subgroups specified in Table IIA herein at TA = +25°C ± 5°C after an exposure of 2 x 10 neutrons/cm (minimum).
4.4.4.3 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
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6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-97512
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
97512
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-22620
Circuit function
Radiation hardened, SOI, dual wideband, high
input impedance, uncompensated operational
amplifier
A.1.2.3 Device class designator.
Device class
Q or V
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Certification and qualification to the die requirements of MIL-PRF-38535
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-97512
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-97512
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-97512
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the
manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
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APPENDIX A
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A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone
(614)-692-0547.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DSCC-VA and have
agreed to this drawing.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-97512
Die bonding pad locations and electrical functions
FIGURE A-1
NOTE: Pad numbers reflect terminal numbers when placed in case outline X (see figure 1).
Die physical dimensions.
Die size: 2950 microns x 3750 microns.
Die thickness: 19 ± 1 mils.
Interface materials.
Top metallization: Al Cu 12.0 kÅ - 16.0 kÅ
Backside metallization: None.
Glassivation.
Type: Nitride over silox
Nitrade thickness: 2.0 kÅ - 5.0 kÅ
PSG thickness: 10.0 kÅ - 14.0 kÅ
Substrate: Bonded wafer
Assembly related information.
Substrate potential: floating
NOTE: Web pad (14) provided for substrate tie-off.
Special assembly instructions: Double bond wires used for bond pads number 10, 11, 17, and 18.
Package part has NC on pins 5 and 14.
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 05-10-14
Approved sources of supply for SMD 5962-97512 are listed below for immediate acquisition information only and shall
be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised
to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate
of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of
supply at http://www.dscc.dla.mil/Programs/Smcr/ .
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F9751201VXC
34371
HS9-22620RH-Q
5962F9751201V9A
34371
HS0-22620RH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Intersil
2401 Palm Bay Blvd
PO Box 883
Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.