DATASHEET

HS-390RH-T
TM
Data Sheet
July 1999
FN4604.1
Radiation Hardened
CMOS Dual SPDT Analog Switch
Features
Intersil’s Satellite Applications Flow TM (SAF) devices are
fully tested and guaranteed to 100kRAD total dose. This
QML Class T device is processed to a standard flow
intended to meet the cost and shorter lead-time needs of
large volume satellite manufacturers, while maintaining a
high level of reliability.
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
- No Latch-Up, Dielectrically Isolated Device Islands
• QML Class T, Per MIL-PRF-38535
• Pin for Pin Compatible with Intersil HI-390 Series Analog
Switches
The HS-390RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). These switches offer lowresistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30Ω pre-rad and 35Ω
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)
• Low Operating Power. . . . . . . . . . 100µA (Max, Post Rad)
Pinouts
HS1-390RH (SBDIP), CDIP2-T16
TOP VIEW
D1
1
16 S1
NC
2
15 IN1
D3
3
14 V-
S3
4
13 GND
S4
5
12 NC
Specifications
D4
6
11 V+
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
NC
7
10 IN2
D2
8
9 S2
Detailed Electrical Specifications for the HS-390RH-T
are contained in SMD 5962-95813. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
HS9-390RH (FLATPACK), CDFP4-F16
TOP VIEW
D1
NC
D3
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
S3
D2
Ordering Information
PART
NUMBER
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
S1
IN1
VGND
NC
S4
D4
NC
ORDERING
NUMBER
1
TEMP.
RANGE
(oC)
5962R9581303TEC
HS1-390RH-T
-55 to 125
5962R9581303TYC
HS9-390RH-T
-55 to 125
V+
IN2
S2
Functional Diagram
IN
N
P
D
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
TRUTH TABLE
1
LOGIC
SW1 SW2
SW3 SW4
0
OFF
ON
1
ON
OFF
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS-390RH-T
Die Characteristics
PASSIVATION:
DIE DIMENSIONS:
(2130µm x 1930µm x 279µm ±25.4µm)
Type: Silox (SiO2)
84 x 76 x 11mils ±1mil
Thickness: 8.0kÅ ±1.0kÅ
WORST CASE CURRENT DENSITY:
METALLIZATION:
< 2.0e5 A/cm 2
Type: Al
Thickness: 12.5kÅ ±2kÅ
TRANSISTOR COUNT:
SUBSTRATE POTENTIAL:
76
Unbiased (DI)
PROCESS:
BACKSIDE FINISH:
Metal Gate CMOS, Dielectric Isolation
Gold
Metallization Mask Layout
IN1
S1
D1
D3
HS-390RH-T
S3
VGND
S4
IN2
S2
D2
D4
V+
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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2
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