DATASHEET

HS-6254RH
Data Sheet
August 1999
Radiation Hardened Ultra High Frequency
NPN Transistor Array
The HS-6254RH is a Radiation Hardened array of five NPN
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes provides
an immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
The high FT (8GHz) and low noise figure (3.5dB) of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the five transistors provides the closest electrical and
thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
File Number
Features
• Electrically Screened to SMD # 5962-97641
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si)
- SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation
• Gain Bandwidth Product (FT) . . . . . . . . . . . . . .8GHz (Typ)
• Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ)
• Early Voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ)
• Noise Figure (50Ω) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Applications
Detailed Electrical Specifications for these devices are
contained in SMD 5962-97641. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
• High Frequency Converters
Pinouts
4425.2
• High Frequency Amplifiers and Mixers
- Refer to Application Note 9315
• Synchronous Detectors
Ordering Information
HS1-6254RH (CERDIP) GDIP1-T16 OR
HS1-6254RH (SBDIP) CDIP2-T16
TOP VIEW
Q1
Q2C 2
Q2E 3
Q2
NC 5
TEMP. RANGE
(oC)
HS0-6254RH-Q
25
5962F9764101VEA
HS1-6254RH-Q
-55 to 125
14 Q5B
5962F9764101VEC
HS1B-6254RH-Q
-55 to 125
13 Q5E
5962F9764101VXC
HS9-6254RH-Q
-55 to 125
HS1-6254RH/SAMPLE
HS1-6254RH/SAMPLE
-55 to 125
15 Q1B
12 Q5C
Q5
11 Q4C
Q3C 6
10 Q4E
Q3E 7
Q3B 8
INTERNAL
MKT. NUMBER
HS0-6254RH-Q
16 Q1E
Q1C 1
Q2B 4
ORDERING NUMBER
Q3
Q4
9 Q4B
HS9-6254RH (FLATPACK) CDFP4-F16
TOP VIEW
Q1C
Q2C
Q2E
Q2B
NC
Q3C
Q3E
Q3B
1
16
2
Q1
3
4
14
13
Q2
5
12
Q5
6
11
7
8
15
10
Q3
Q4
1
9
Q1E
Q1B
Q5B
Q5E
Q5C
Q4C
Q4E
Q4B
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HS-6254RH
Burn-In Circuit
10.5V ±0.5V
5.5V ±0.5V
0.01µF
100 ±5%
0.01µF
16
1
Q1
2
1K ±5%
Q2
NC 5
13
12
Q5
10
7
8
1K ±5%
11
6
1K ±5%
1K ±5%
14
3
4
15
Q3
Q4
9
1K ±5%
Irradiation Circuit
10.5V ±0.5V
100Ω ±5%
0.01µF
16
1
Q1
2
4
Q2
NC 5
13
12
Q5
10
7
5V ±0.5V
2
0.01µF
8
1K ±5%
11
6
1K ±5%
1K ±5%
14
3
1K ±5%
15
Q3
Q4
9
1K ±5%
HS-6254RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
52 mils x 52.8 mils x 15 mils ±1 mil
1320µm x 1340µm x 381µm ±25.4µm
Substrate Potential:
Floating
INTERFACE MATERIALS:
ADDITIONAL INFORMATION:
Glassivation:
Worst Case Current Density:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
3.04 x 105A/cm2
Transistor Count:
Top Metallization:
5
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
HS-6254RH
2
1
16
15
3
14
4
13
5
12
6
11
7
8
9
10
NOTE: Pad numbers correspond to the 16 lead pinout.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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