HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. The high FT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the five transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility. File Number Features • Electrically Screened to SMD # 5962-97641 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si) - SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation • Gain Bandwidth Product (FT) . . . . . . . . . . . . . .8GHz (Typ) • Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ) • Early Voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ) • Noise Figure (50Ω) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ) • Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ) Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Applications Detailed Electrical Specifications for these devices are contained in SMD 5962-97641. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp • High Frequency Converters Pinouts 4425.2 • High Frequency Amplifiers and Mixers - Refer to Application Note 9315 • Synchronous Detectors Ordering Information HS1-6254RH (CERDIP) GDIP1-T16 OR HS1-6254RH (SBDIP) CDIP2-T16 TOP VIEW Q1 Q2C 2 Q2E 3 Q2 NC 5 TEMP. RANGE (oC) HS0-6254RH-Q 25 5962F9764101VEA HS1-6254RH-Q -55 to 125 14 Q5B 5962F9764101VEC HS1B-6254RH-Q -55 to 125 13 Q5E 5962F9764101VXC HS9-6254RH-Q -55 to 125 HS1-6254RH/SAMPLE HS1-6254RH/SAMPLE -55 to 125 15 Q1B 12 Q5C Q5 11 Q4C Q3C 6 10 Q4E Q3E 7 Q3B 8 INTERNAL MKT. NUMBER HS0-6254RH-Q 16 Q1E Q1C 1 Q2B 4 ORDERING NUMBER Q3 Q4 9 Q4B HS9-6254RH (FLATPACK) CDFP4-F16 TOP VIEW Q1C Q2C Q2E Q2B NC Q3C Q3E Q3B 1 16 2 Q1 3 4 14 13 Q2 5 12 Q5 6 11 7 8 15 10 Q3 Q4 1 9 Q1E Q1B Q5B Q5E Q5C Q4C Q4E Q4B CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-6254RH Burn-In Circuit 10.5V ±0.5V 5.5V ±0.5V 0.01µF 100 ±5% 0.01µF 16 1 Q1 2 1K ±5% Q2 NC 5 13 12 Q5 10 7 8 1K ±5% 11 6 1K ±5% 1K ±5% 14 3 4 15 Q3 Q4 9 1K ±5% Irradiation Circuit 10.5V ±0.5V 100Ω ±5% 0.01µF 16 1 Q1 2 4 Q2 NC 5 13 12 Q5 10 7 5V ±0.5V 2 0.01µF 8 1K ±5% 11 6 1K ±5% 1K ±5% 14 3 1K ±5% 15 Q3 Q4 9 1K ±5% HS-6254RH Die Characteristics DIE DIMENSIONS: ASSEMBLY RELATED INFORMATION: 52 mils x 52.8 mils x 15 mils ±1 mil 1320µm x 1340µm x 381µm ±25.4µm Substrate Potential: Floating INTERFACE MATERIALS: ADDITIONAL INFORMATION: Glassivation: Worst Case Current Density: Type: Nitride Thickness: 4kÅ ±0.5kÅ 3.04 x 105A/cm2 Transistor Count: Top Metallization: 5 Type: Metal 1: AlCu (2%)/TiW Thickness: Metal 1: 8kÅ ±0.5kÅ Type: Metal 2: AlCu (2%) Thickness: Metal 2: 16kÅ ±0.8kÅ Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon Metallization Mask Layout HS-6254RH 2 1 16 15 3 14 4 13 5 12 6 11 7 8 9 10 NOTE: Pad numbers correspond to the 16 lead pinout. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 3