DATASHEET

Radiation Hardened Ultra High Frequency NPN/PNP
Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
ISL73128EH
The ISL73096, ISL73127 and ISL73128 are radiation
Features
hardened bipolar transistor arrays. The ISL73096 consists of
three NPN transistors and two PNP transistors on a common
substrate. The ISL73127 consists of five NPN transistors on a
common substrate. The ISL73128 consists of five PNP
transistors on a common substrate.
The ISL73096EH, ISL73127EH and ISL73128EH devices
encompass all of the production testing of the ISL73096RH,
ISL73127RH and ISL73128RH devices and additionally are
tested in the Intersil Enhanced Low Dose Rate Sensitivity
(ELDERS) product manufacturing flow.
One of our bonded wafer, dielectrically isolated fabrication
processes provides an immunity to single event latch-up and
the capability of highly reliable performance in a radiation
environment.
• Electrically screened to SMD # 5962-07218
• QML qualified per MIL-PRF-38535 requirements
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation
• NPN gain bandwidth product (FT) . . . . . . . . . . . . . . 8GHz (typ)
• NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)
• NPN early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)
• PNP gain bandwidth product (FT). . . . . . . . . . . . . 5.5GHz (typ)
• PNP current gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)
The high gain-bandwidth product and low noise figure of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
• PNP early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)
Related Literature
Applications
• AN1503, Amplifier Design Using ISL73096RH,
ISL73127RH, ISL73128RH Transistor Arrays
• High frequency amplifiers and mixers
• High frequency converters
• TID REPORT for the Radiation Hardened UHF NPN/PNP
transistor array
• Synchronous detector
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ)
• Complete isolation between transistors
* Limit established by characterization.
120
75
115
70
110
65
BETA
BETA
105
100
95
55
50
90
45
85
80
60
0
50
100
150
krad(Si)
200
250
300
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
June 27, 2014
FN6475.4
1
40
0
50
100
150
krad(Si)
200
250
300
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2007, 2009, 2012, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Typical Applications
+
VCC
R3
39kΩ
R2
100Ω
R1
39kΩ
-
R4
100Ω
C3 1nF
C2 1nF
VO
C1 1nF
Q5
Q2
RL
50Ω
RS
50Ω
-
+
VS
FIGURE 3. HIGH-GAIN, LOW-NOISE AMPLIFIER MADE FROM ISL73127
R4
R1
2kΩ
Q5
Q4
RF
240Ω
R2
15kΩ
+
-
100Ω
R3
L1
1µH
C1
1nF
1kΩ
VEE
VO
C3
RL
1nF
50Ω
Q2
C2
1nF
RS
RE
50Ω
5.1Ω
+VS
FIGURE 4. WIDEBAND AMPLIFIER MADE FROM ISL73096
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FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Ordering Information
ORDERING
SMD NUMBER
PART
NUMBER (Notes 1, 2)
TEMP. RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
5962F0721804VXC
ISL73096EHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721801VXC
ISL73096RHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721801V9A
ISL73096RHVX
-55 to +125
DIE
5962F0721804V9A
ISL73096EHVX
-55 to +125
DIE
5962F0721805VXC
ISL73127EHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721802VXC
ISL73127RHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721802V9A
ISL73127RHVX
-55 to +125
DIE
5962F0721805V9A
ISL73127EHVX
-55 to +125
DIE
5962F0721806VXC
ISL73128EHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721803VXC
ISL73128RHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721803V9A
ISL73128RHVX
-55 to +125
DIE
5962F0721806V9A
ISL73128EHVX
-55 to +125
DIE
ISL73096RHF/PROTO
ISL73096RHF/PROTO
-55 to +125
16 Ld FLATPACK
ISL73096RHX/SAMPLE
ISL73096RHX/SAMPLE
-55 to +125
DIE
ISL73127RHF/PROTO
ISL73127RHF/PROTO
-55 to +125
16 Ld FLATPACK
ISL73127RHX/SAMPLE
ISL73127RHX/SAMPLE
-55 to +125
DIE
ISL73128RHF/PROTO
ISL73128RHF/PROTO
-55 to +125
16 Ld FLATPACK
ISL73128RHX/SAMPLE
ISL73128RHX/SAMPLE
-55 to +125
DIE
K16.A
K16.A
K16.A
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
Ordering Information table must be used when ordering.
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FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Pin Configurations
ISL73096RH, ISL73096EH
(16 LD FLATPACK) CDFP4-F16
ISL73127RH, ISL73127EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
TOP VIEW
1
2
NC 16
1
15
2
14
3
13
4
12
5 NC
12
11
6
11
10
7
9
8
Q1
Q5
3
4
5
Q2
Q4
6
7
8
Q3
Q1
Q2
Q3
Q5
Q4
16
15
14
13
10
9
ISL73128RH, ISL73128EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
Q1
2
3
4
Q2
Q5
16
15
14
13
5 NC
12
6
11
7
8
Q3
Q4
10
9
Pin Descriptions
PIN NAME/DESCRIPTION
ISL73096RH, ISL73096EH
PIN #
PIN NAME/DESCRIPTION
ISL73127RH/ISL73128RH
ISL73127EH/ISL73128EH
1
Q1 BASE
Q1 COLLECTOR
2
Q1 EMITTER
Q2 COLLECTOR
3
Q1 COLLECTOR
Q2 EMITTER
4
Q2 EMITTER
Q2 BASE
5
Q2 BASE
NC (No internal Connection)
6
Q2 COLLECTOR
Q3 COLLECTOR
7
Q3 EMITTER
Q3 EMITTER
8
Q3 BASE
Q3 BASE
9
Q3 COLLECTOR
Q4 BASE
10
Q4 EMITTER
Q4 EMITTER
11
Q4 BASE
Q4 COLLECTOR
12
Q4 COLLECTOR
Q5 COLLECTOR
13
Q5 EMITTER
Q5 EMITTER
14
Q5 BASE
Q5 BASE
15
Q5 COLLECTOR
Q1 BASE
16
NC (No internal Connection)
Q1 EMITTER
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FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (Open Base)
ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . . . +8V
ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . . . -8V
Collector to Base Voltage (Open Emitter)
ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . . +12V
ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . .-10V
Emitter to Base Voltage (Reverse Bias)
ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . +5.5V
ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . -4.5V
Collector Current at 100% Duty Cycle, at TJ +175°C . . . . . . . . . . . .11.3mA
Power Dissipation (Pd), at TA +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Power Dissipation (Pd), at TA +125°C. . . . . . . . . . . . . . . . . . . . . . . . . 0.41W
Thermal Resistance (Typical)
JA (°C/W)
JC (°C/W)
16 Ld FLATPACK Package( Notes 3, 4) . . .
120
28
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (TJMAX) . . . . . . . . . . . . . . . . . . . . .+175°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For JC, the “case temp” location is the center of the package underside.
Electrical Specifications TA = +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to
+125°C; across a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 to 300 rad(Si)/s or over a total ionizing dose of 50krad(Si)
with exposure a low dose rate of <10mrad(Si)/s at +25°C.
SYMBOL
DESCRIPTION
TEST CONDITIONS
MIN
(Note 5)
TYP
MAX
(Note 5)
UNITS
NPN PARAMETER
V(BR)CBO
Collector to Base Breakdown Voltage
IC = 100µA, IE = 0
12
V
V(BR)CEO
Collector to Emitter Breakdown Voltage
IC = 100µA, IB = 0
8
V
V(BR)CES
Collector to Emitter Breakdown Voltage
IC = 100µA, base shorted to emitter
10
V
V(BR)EBO
Emitter to Base Breakdown Voltage
IE = 10µA, IC = 0
5.5
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10mA, IB = 1mA
Base to Emitter Voltage
IC = 10mA
VBE
hFE
DC Forward Current Transfer Ratio
IC = 10mA, VCE = 2V
0.5
V
0.95
V
1.05
V
80
40
Early Voltage
IC = 1mA, VCE = 3.5V
20
V
V(BR)CBO
Collector to Base Breakdown Voltage
IC = -100µA, IE = 0
10
V
V(BR)CEO
Collector to Emitter Breakdown Voltage
IC = -100µA, IB = 0
8
V
V(BR)CES
Collector to Emitter Breakdown Voltage
IC = -100µA, base shorted to emitter
10
V
V(BR)EBO
Emitter to Base Breakdown Voltage
IE = -10µA, IC = 0
4.5
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = -10mA, IB = -1mA
Base to Emitter Voltage
IC = -10mA
VA
PNP PARAMETER
VBE
hFE
DC Forward Current Transfer Ratio
IC = -10mA, VCE = -2V
0.5
V
0.95
V
1.05
V
40
20
VA
Early Voltage
IC = -1mA, VCE = -3.5V
10
V
NOTE:
5. Compliance to data sheet limits is assured by one or more methods: production test, characterization and/or design.
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FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
+25°C unless otherwise specified.
25
IB = 200µA
20
IB = 160µA
100m
VCE = 3V
IC
10m
COLLECTOR CURRENT
AND BASE CURRENT (A)
COLLECTOR CURRENT (mA)
Typical Performance Curves
IB =120µA
15
IB = 80µA
10
IB = 40µA
5
1m
IB
100µ
10
1
100n
10n
0
1
2
3
4
1n
0.5
5
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER
VOLTAGE
0.6
0.7
0.8
0.9
BASE TO EMITTER VOLTAGE (V)
1.0
FIGURE 6. NPN COLLECTOR CURRENT AND BASE CURRENT
vs BASE TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT (GHz)
10.0
VCE = 3V
160
DC CURRENT GAIN
140
120
100
80
60
40
20
0
1µ
10µ
100µ
1m
10m
8.0
VCE = 5V
6.0
VCE = 1V
4.0
2.0
0
0.1
100m
COLLECTOR CURRENT (A)
-100m
VCE = -3V
100
IC
-10m
IB = -320µA
COLLECTOR CURRENT
AND BASE CURRENT (A)
COLLECTOR CURRENT (mA)
10
FIGURE 8. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT
IB = -400µA
-20
1.0
COLLECTOR CURRENT (mA)
FIGURE 7. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
-25
VCE = 3V
IB = -240µA
-15
IB = -160µA
-10
IB = -80µA
-5
IB
-1m
-100
-10
-1
-100n
-10n
0
0
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 9. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER
VOLTAGE
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6
-1n
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 10. PNP COLLECTOR CURRENT AND BASE CURRENT vs
BASE TO EMITTER VOLTAGE
FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Typical Performance Curves
+25°C unless otherwise specified. (Continued)
5.0
GAIN BANDWIDTH PRODUCT (GHz)
VCE = -3V
160
DC CURRENT GAIN
140
120
100
80
60
40
20
0
-1µ
-10µ
-100µ
-1m
-10m
-100m
COLLECTOR CURRENT (A)
FIGURE 11. PNP DC CURRENT GAIN vs COLLECTOR CURRENT
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VCE = -5V
4.0
VCE = -3V
3.0
VCE = -1V
2.0
1.0
-0.1
-1.0
-10
-100
COLLECTOR CURRENT (mA)
FIGURE 12. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT
FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
52.8 mils x 52.0 mils x 14 mils ±1 mil
1340µm x 1320µm x 355.6µm ±25.4µm
INTERFACE MATERIALS:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Glassivation:
Worst Case Current Density:
Type: Nitride
Thickness: 4kÅ 0.5kÅ
3.04 x 105A/cm2
Transistor Count:
Top Metallization:
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
5
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
(2) Q2C (1) Q1C (16) Q1E (15) Q1B
(3) Q2E
(14) Q5B
(4) Q2B
(13) Q5E
(5) NC
(12) Q5C
(6) Q3C
(11) Q4C
(7) Q3E
FIGURE 13. ISL73096RH, ISL73096EH
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8
(8) Q3B (9) Q4B (10) Q4E
FIGURE 14. ISL73127RH, ISL73127EH
FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Metallization Mask Layout (Continued)
(2) Q2C (1) Q1C (16) Q1E (15) Q1B
(3) Q2E
(14) Q5B
(4) Q2B
(13) Q5E
(5) NC
(12) Q5C
(6) Q3C
(11) Q4C
(7) Q3E
(8) Q3B (9) Q4B (10) Q4E
FIGURE 15. ISL73128RH, ISL73128EH
TABLE 1. DIE LAYOUT X-Y COORDINATES
BOND PAD
NUMBER
X
(MILS)
Y
(MILS)
dX
(MILS)
dY
(MILS)
1
0
0
5
5
2
-7.25
0
5
5
3
-14.25
-7.09
5
5
4
-14.25
-14.4
5
5
5
-14.25
-21.7
5
5
6
-14.25
-28.9
5
5
7
-7.25
-36.2
5
5
8
0
-36.2
5
5
9
7.25
-36.2
5
5
10
14.5
-36.2
5
5
11
21.7
-28.9
5
5
12
21.7
-21.7
5
5
13
21.7
-14.4
5
5
14
21.7
-7.1
5
5
15
14.5
0
5
5
16
7.3
0
5
5
NOTE:
6. Coordinate Origin is Centroid of PAD 1
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FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you
have the latest Rev.
DATE
REVISION
CHANGE
June 27, 2014
FN6475.4
Added “EH” finished good ISL73096EHVF, SL73096EHVX, ISL73127EHVF, ISL73127EHVX and ISL73128EHVFX
to ordering information table.
Added EH parts to title and mentioned throughout datasheet where applicable.
November 12, 2009
FN6475.3
Converted to new Intersil template. Changed App Note Reference from “AN9315” to “AN1503” to reflect new
app note for the radiation hardened product. Updated ordering information with package column, notes to
match lead finish and MSL note.
March 23, 2009
FN6475.2
Under Pinouts, changed DIP symbols to flatpack symbols. Changed (16 LD SBDIP) CDIP2-T16 to (16 LD
Flatpack) CDFP4-F16.
Under Ordering Information, added the following flatpack device types:
5962F0721801VXC (ISL73096RHVF), 5962F0721802VXC (ISL73127RHVF) and 5962F0721803VXC
(ISL73128RHVF).
December 20, 2007
FN6475.1
Added ISL73127RH & ISL73128RH device types.
March 29, 2007
FN6475.0
Initial Release.
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated data sheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
You may report errors or suggestions for improving this data sheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Package Outline Drawing
K16.A
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
Rev 2, 1/10
0.015 (0.38)
0.008 (0.20)
PIN NO. 1
ID OPTIONAL
1
2
0.050 (1.27 BSC)
PIN NO. 1
ID AREA
TOP VIEW
0.022 (0.56)
0.015 (0.38)
0.115 (2.92)
0.045 (1.14)
0.440 (11.18)
MAX
0.005 (0.13)
MIN
4
0.045 (1.14)
0.026 (0.66)
-C-
SEATING AND
BASE PLANE
6
0.285 (7.24)
0.245 (6.22)
0.13 (3.30)
MIN
0.009 (0.23)
0.004 (0.10)
-D-
0.370 (9.40)
0.250 (6.35)
-H-
0.03 (0.76) MIN
LEAD FINISH
SIDE VIEW
NOTES:
0.006 (0.15)
0.004 (0.10)
1. Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area shown.
The manufacturer’s identification shall not be used as a pin one
identification mark. Alternately, a tab may be used to identify pin one.
LEAD FINISH
0.009 (0.23)
BASE
METAL
0.004 (0.10)
0.019 (0.48)
0.015 (0.38)
3. The maximum limits of lead dimensions (section A-A) shall be
measured at the centroid of the finished lead surfaces, when solder
dip or tin plate lead finish is applied.
4. Measure dimension at all four corners.
0.0015 (0.04)
MAX
5. For bottom-brazed lead packages, no organic or polymeric materials
shall be molded to the bottom of the package to cover the leads.
0.022 (0.56)
0.015 (0.38)
3
SECTION A-A
2. If a pin one identification mark is used in addition to a tab, the limits
of the tab dimension do not apply.
6. Dimension shall be measured at the point of exit (beyond the
meniscus) of the lead from the body. Dimension minimum shall
be reduced by 0.0015 inch (0.038mm) maximum when solder dip
lead finish is applied.
7. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
8. Controlling dimension: INCH.
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11
FN6475.4
June 27, 2014
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