DATASHEET

DATASHEET
Radiation Hardened BiCMOS Dual SPDT Analog Switch
HS-303CEH
Features
The HS-303CEH is an analog switch and a monolithic device
that is fabricated using Intersil’s dielectrically isolated
Radiation Hardened Silicon Gate (RSG) process technology to
insure latch-up free operation. It is pinout compatible and
functionally equivalent to the HS-303RH. This switch offers
low-resistance switching performance for analog voltages up
to the supply rails. ON-resistance is low and stays reasonably
constant over the full range of operating voltage and current.
ON-resistance also stays reasonably constant when exposed to
radiation. Break-before-make switching is controlled by 5V
digital inputs. The HS-303CEH can operate with rails of ±15V.
• QML, per MIL-PRF-38535
Specifications
The Detailed Electrical Specifications for the HS-303CEH is
contained in SMD 5962-95813.
• No latch-up, dielectrically isolated device islands
• Pinout and functionally compatible with Intersil HS-303RH
series analog switches
• Analog signal range equal to the supply voltage range
• Low leakage . . . . . . . . . . . . . . . . . . . . . 150nA (max, post-rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . 60Ω (max, post-rad)
• Low standby supply current . . . . . . . ±150µA (max, post-rad)
• Radiation assurance
- High dose rate (50 to 300rad(Si)/s) . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
• Single event effects
- For LET = 60MeV-mg/cm2 at 60° incident angle,
<150pC charge transferred to the output of an off switch
S
N
IN
P
D
NEGATIVE SWITCH VOLTAGE (VSW-)
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
16
14
12
10
8
6
4
2
0
10
11
12
13
14
15
NEGATIVE SUPPLY VOLTAGE (V-)
FIGURE 1. LOGIC CIRCUIT
FIGURE 2. RECOMMENDED OPERATING AREA IN GREY
TABLE 1. TRUTH TABLE
LOGIC
SW1 AND SW2
SW3 AND SW4
0
OFF
ON
1
ON
OFF
March 4, 2015
FN8399.3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas LLC 2012, 2013, 2015. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-303CEH
Pin Configuration
HS-303CEH
(14 LD FLATPACK)
TOP VIEW
NC
S3
D3
D1
S1
IN1
GND
1
14
2
13
3
12
4
11
5
10
6
9
7
8
V+
S4
D4
D2
S2
IN2
V-
Pin Descriptions
PIN NUMBER
PIN NAME
PIN DESCRIPTION
1
NC
Not Electrically Connected
2
S3
Analog Switch: Source connection
3
D3
Analog Switch: Drain Connection
4
D1
Analog Switch: Drain Connection
5
S1
Analog Switch: Source connection
6
IN1
Digital Control Input for SW1 and SW3
7
GND
Ground
8
V-
9
IN2
Digital Control Input for SW2 and SW4
10
S2
Analog Switch: Source connection
11
D2
Analog Switch: Drain Connection
12
D4
Analog Switch: Drain Connection
13
S4
Analog Switch: Source connection
14
V+
Positive Power Supply
Negative Power Supply
Ordering Information
ORDERING SMD NUMBER
(Note 2)
PART NUMBER
(Note 1)
TEMP. RANGE
(°C)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
5962R9581308VXC
HS9-303CEH-Q
-55 to +125
14 Ld Flatpack
K14.A
5962R9581308V9A
HS0-303CEH-Q
-55 to +125
Die
N/A
HS9-303CEH/PROTO
HS9-303CEH/PROTO
-55 to +125
14 Ld Flatpack
K14.A
HS0-303CEH/SAMPLE
HS0-303CEH/SAMPLE
-55 to +125
Die
N/A
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering.
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FN8399.3
March 4, 2015
HS-303CEH
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
±VSUPPLY to Ground (V+, V-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±17.5V
Analog Input Voltage
(+VS ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+VSUPPLY +1.5V
(-VS ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -VSUPPLY -1.5V
Digital Input Voltage
(+VA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLY +4V
(-VA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -VSUPPLY -4V
Peak Current (S or D)
(Pulse at 1ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1kV
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
Flatpack Package (Notes 3, 4) . . . . . . . . . .
105
17
Package Power Dissipation at 125°C
Flatpack Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48W/°C
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175°C
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Recommended Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Operating Supply Voltage Range (±VSUPPLY) . . . . . . . . . . . . . . . . . . . . ±15V
Analog Input Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±VSUPPLY
Logic Low Level (VAL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 0.8V
Logic High Level (VAH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0V to +VSUPPLY
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For JC, the “case temp” location is the center of the package underside.
Electrical Specifications
-55°C to +125°C.
SYMBOL
VSUPPLY = ±15V unless otherwise specified. Boldface limits apply across the operating temperature range,
PARAMETER
TEST CONDITIONS
MIN
(Note 7)
TYP
MAX
(Note 7)
UNITS
+rDS(ON)
“Switch On” Resistance
VD = 10V, IS = -10mA
35
75
Ω
-rDS(ON)
“Switch On” Resistance
VD = -10V, IS = 10mA
35
75
Ω
+IS(OFF)
Leakage Current into Source of an “OFF” Switch
VS = +14V, VD = -14V
-150
0.05
150
nA
VS = +15V, VD = -15V
-20
20
µA
VS = -14V, VD = +14V
-150
VS = -15V, VD = +15V
-20
VS = +14V, VD = -14V
-150
VS = +15V, VD = -15V
-20
-IS(OFF)
+ID(OFF)
-ID(OFF)
Leakage Current into Source of an “OFF” Switch
Leakage Current into Drain of an “OFF” Switch
Leakage Current into Drain of an “OFF” Switch
VS = -14V, VD = +14V
-150
VS = -15V, VD = +15V
-20
0.5
0.05
0.5
150
nA
20
µA
150
nA
20
µA
150
nA
20
µA
+ID(ON)
Leakage Current from an “ON” Driver into the
Switch (Drain and Source)
VS = +14V, VD = +14V
-100
-0.1
100
nA
-ID(ON)
Leakage Current from an “ON” Driver into the
Switch (Drain and Source)
VS = -14V, VD = -14V
-100
0.01
100
nA
IAL
Low Level Input Address Current
All Channels VA = 0.8V
-1000
0.03
1000
nA
IAH
High Level Input Address Current
All Channels VA = 4.0V
-1000
0.03
1000
nA
I+
Positive Supply Current
I-
Negative Supply Current
45
150
µA
VA1 = 0V, VA2 = 4V
VA1 = 4V, VA2 = 0V
All Channels VA = 0.8V
0.15
0.6
mA
All Channels VA = 0.8V
-0.1
-100
µA
VA1 = 0V, VA2 = 4V
VA1 = 4V, VA2 = 0V
-0.1
-100
µA
CIS(OFF)
Switch Input Capacitance
From Source to GND (Notes 5, 6)
28
pF
CC1
Driver Input Capacitance
VA = 0V (Notes 5, 6)
10
pF
CC2
Driver Input Capacitance
VA = 15V (Notes 5, 6)
10
pF
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FN8399.3
March 4, 2015
HS-303CEH
Electrical Specifications
-55°C to +125°C. (Continued)
SYMBOL
VSUPPLY = ±15V unless otherwise specified. Boldface limits apply across the operating temperature range,
PARAMETER
TEST CONDITIONS
MIN
(Note 7)
COS
Switch Output
Measured Drain to GND (Notes 5, 6)
VISO
Off Isolation
VGEN = 1Vp-p, f = 1MHz (Notes 5, 6)
40
40
VCR
Cross Talk
VGEN = 1Vp-p, f = 1MHz (Notes 5, 6)
VCTE
Charge Transfer Error
VS = GND, CL= 0.01µF (Notes 5, 6)
tOPEN
Break-before-make Time Delay
RL = 300Ω, VS = 3V, VAH = 5V, VAL = 0V
tON
Switch Turn “ON” Time
tOFF
Switch Turn “OFF” Time
TYP
MAX
(Note 7)
UNITS
28
pF
dB
dB
15
mV
50
300
ns
RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V
250
500
ns
RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V
200
450
ns
10
NOTES:
5. Limits established by characterization and are not production tested.
6. VAL = 0V and VAH = 4V.
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
Post Radiation Characteristics VSUPPLY = ±15V unless otherwise specified. This data is typical test data post radiation exposure at a
rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to total ionizing dose (high dose radiation) TA= +25°C.
0k
100k
UNITS
+rDS(ON)
SYMBOL
“Switch On” Resistance
PARAMETER
VD = 10V, IS = -10mA
TEST CONDITIONS
34
35
Ω
-rDS(ON)
“Switch On” Resistance
VD = -10V, IS = 10mA
28
29
Ω
+IS(OFF)
Leakage Current into Source of an “OFF” Switch
VS = +14V, VD = -14V
-0.20
-0.31
nA
VS = +15V, VD = -15V
-0.003
-0.47
µA
-IS(OFF)
Leakage Current into Source of an “OFF” Switch
VS = -14V, VD = +14V
0.30
0.84
nA
VS = -15V, VD = +15V
0.001
0.02
µA
+ID(OFF)
Leakage Current into Drain of an “OFF” Switch
VS = +14V, VD = -14V
-1.20
-0.90
nA
VS = +15V, VD = -15V
-0.001
-0.001
µA
-ID(OFF)
Leakage Current into Drain of an “OFF” Switch
VS = -14V, VD = +14V
0.31
0.90
nA
VS = -15V, VD = +15V
0.0003
0.001
µA
+ID(ON)
Leakage Current from an “ON” Driver into the Switch (Drain
and Source)
VS = +14V, VD = +14V
-0.2
-0.55
nA
-ID(ON)
Leakage Current from an “ON” Driver into the Switch (Drain
and Source)
VS = -14V, VD = -14V
0.15
0.28
nA
IAL
Low Level Input Address Current
All Channels VA = 0.8V
0.35
0.25
nA
IAH
High Level Input Address Current
All Channels VA = 4.0V
1.98
1.47
nA
I+
Positive Supply Current
All Channels VA = 0.8V
55
53
µA
VA1 = 0V, VA2 = 4V
VA1 = 4V, VA2 = 0V
167.2
113.7
µA
All Channels VA = 0.8V
-0.01
-0.01
µA
VA1 = 0V, VA2 = 4V
VA1 = 4V, VA2 = 0V
-0.01
-0.02
µA
I-
Negative Supply Current
Break-before-make Time Delay
RL = 300Ω, VS = 3V, VAH = 5V, VAL = 0V
42
47
ns
tON
Switch Turn “ON” Time
RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V
224
213
ns
tOFF
Switch Turn “OFF” Time
RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V
192
173
ns
tOPEN
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FN8399.3
March 4, 2015
HS-303CEH
Post Radiation Characteristics VSUPPLY = ±15V unless otherwise specified. This data is typical test data post radiation exposure
at a rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to total ionizing dose (low dose radiation). TA= +25°C.
SYMBOL
PARAMETER
TEST CONDITIONS
0k
25k
50k
75k
100k
UNITS
+rDS(ON)
“Switch On” Resistance
VD = 10V, IS = -10mA
33.57
34.39
34.37
34.75
34.65
Ω
-rDS(ON)
“Switch On” Resistance
VD = -10V, IS = 10mA
27.56
28.37
28.48
28.92
28.77
Ω
+IS(OFF)
Leakage Current into Source of an
“OFF” Switch
VS = +14V, VD = -14V
-0.30
-0.26
-0.36
-0.55
-0.47
nA
VS = +15V, VD = -15V
-0.006
-0.002
-0.002
-0.003
-0.002
µA
-IS(OFF)
+ID(OFF)
-ID(OFF)
Leakage Current into Source of an
“OFF” Switch
VS = -14V, VD = +14V
0.32
0.45
0.75
1.05
0.94
nA
VS = -15V, VD = +15V
0.004
0.003
0.003
0.003
0.002
µA
Leakage Current into Drain of an “OFF” VS = +14V, VD = -14V
Switch
VS = +15V, VD = -15V
-0.36
-0.22
-0.25
-0.46
-0.40
nA
-0.001
-0.001
-0.001
-0.001
-0.002
µA
Leakage Current into Drain of an “OFF” VS = -14V, VD = +14V
Switch
VS = -15V, VD = +15V
0.43
0.69
1.02
0.92
0.0004
0.34
0.0008 0.0011 0.0014 0.0018
nA
µA
+ID(ON)
Leakage Current from an “ON” Driver
into the Switch (Drain and Source)
VS = +14V, VD = +14V
-0.25
-0.26
-0.36
-0.55
-0.65
nA
-ID(ON)
Leakage Current from an “ON” Driver
into the Switch (Drain and Source)
VS = -14V, VD = -14V
0.17
0.15
0.26
0.45
0.40
nA
IAL
Low Level Input Address Current
All Channels VA = 0.8V
0.19
0.30
0.23
0.71
0.48
nA
IAH
High Level Input Address Current
All Channels VA = 4.0V
1.72
0.87
0.83
0.28
1.31
nA
I+
Positive Supply Current
All Channels VA = 0.8V
54
51
50
49
50
µA
VA1 = 0V, VA2 = 4V
VA1 = 4V, VA2 = 0V
185
146
129
116
106
µA
All Channels VA = 0.8V
-0.011
-0.015
-0.011
-0.019
-0.022
µA
VA1 = 0V, VA2 = 4V
VA1 = 4V, VA2 = 0V
-0.013
-0.016
-0.017
-0.019
-0.014
µA
55.63
56.74
I-
Negative Supply Current
Break-before-make Time Delay
RL = 300Ω, VS = 3V, VAH = 5V, VAL = 0V
42.58
50.84
58.06
ns
tON
Switch Turn “ON” Time
RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V
221.03
229.24 240.85 249.79 256.37
ns
tOFF
Switch Turn “OFF” Time
RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V
188.62
184.65 182.27 184.06 182.45
ns
tOPEN
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300
500
HS-303CEH
450
33
25°C
TEST CONDITIONS
MIN
TYP
MAX
UNITS
15
300
500
TRUTH TABLE
LOGIC
450
33AND SW4
SW1 AND SW2
SW3
FIGURE 3. SWITCHING TEST CIRCUIT
FIGURE 4. SWITCHING TEST CIRCUIT WAVEFORM
W4
FIGURE 5. BREAK-BEFORE-MAKE TEST CIRCUIT
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FIGURE 6. BREAK-BEFORE-MAKE TEST CIRCUIT WAVEFORMS
FN8399.3
March 4, 2015
HS-303CEH
Die Characteristics
Backside Finish:
Silicon
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
2815µm x 5325µm (106 milsx205 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
Substrate Potential:
INTERFACE MATERIALS:
Unbiased (DI)
Glassivation:
ADDITIONAL INFORMATION:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ±1.0kÅ
Worst Case Current Density:
<2.0 x 105 A/cm2
Top Metallization:
Transistor Count:
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
348
Package Lid Potential:
Substrate:
Floating
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
HS-303CEH
V+
S3
S4
D3
D4
D1
D1
D2
S1
S2
IN1
IN2
ORIGIN
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GND
V-
FN8399.3
March 4, 2015
HS-303CEH
Layout Characteristics
Step and Repeat: 2815µm x 5325µm
TABLE 2. LAYOUT X-Y COORDINATES
PAD NAME
X (µm)
Y (µm)
DX (µm)
DY (µm)
S3
0
4672.5
109
109
D3
-4.5
3861
109
109
D1
-4.5
1314
109
109
S1
0
617.5
109
109
IN1
0
0
109
109
GND
878
0
109
109
V-
1246
0
109
109
IN2
2124
0
109
109
S2
2124
617.5
109
109
D2
2128.5
1314
109
109
D4
2128.5
3861
109
109
S4
2124
4672
109
109
V+
1062
4675
109
109
NOTE: "Origin" as labeled in the Metallization Mask layout is the centroid
of the pad labeled "IN1".
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HS-303CEH
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
CHANGE
March 4, 2015
FN8399.3
On page 7, changed the transistor count from “216” to “348”.
In Table 2 on page 8, updated 2 pad names to match the “Metallization Mask Layout”:
- Changed from “VEE” to “V-” and from “VCC” to “V+”.
December 19, 2013
FN8399.2
Added ESD ratings to Abs Max Table on page 3
April 5, 2013
FN8399.1
Title on page 1 changed CMOS to BiCMOS
Continuous Current in “Absolute Maximum Ratings” on page 3 changed from 30mA to 10mA
“Post Radiation Characteristics” on page 4 changed unit in positive supply current from mA to µA.
Updated throughout 300krad to 100krad.
Updated Ordering Information on page 2
Updated Electrical Spec Table MIN and MAX values for Leakage Current in Source and Drain for ±15V from
±5 to ±20
Updated in Post Radiation Characteristics Typical values on page 4 for Positive Supply Current for VA1, VA2
from 107.1 to 113.7 and Negative Supply Current for VA1, VA2 from -0.01 to -0.02
Added 100k column to Post Radiation Characteristics table on page 5
Removed negative symbol under 75k column IAL, IAH from 0.71, 0.28 and added negative symbol in I- to
0.019 in VA1, VA2
Removed the words exposed pad from Tjc note.
Updated numbers in Table 2 in X(µm) column.
Added Note to Table 2.
December 21, 2012
FN8399.0
Initial Release
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FN8399.3
March 4, 2015
HS-303CEH
Ceramic Metal Seal Flatpack Packages (Flatpack)
K14.A MIL-STD-1835 CDFP3-F14 (F-2A, CONFIGURATION B)
A
e
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
A
INCHES
PIN NO. 1
ID AREA
SYMBOL
-A-
D
-B-
S1
b
E1
0.004 M
H A-B S
D S
Q
0.036 M
H A-B S
D S
C
E
-D-
A
-C-
-HL
E2
E3
SEATING AND
BASE PLANE
c1
L
E3
BASE
METAL
(c)
b1
M
M
(b)
SECTION A-A
MILLIMETERS
MAX
MIN
MAX
NOTES
A
0.045
0.115
1.14
2.92
-
b
0.015
0.022
0.38
0.56
-
b1
0.015
0.019
0.38
0.48
-
c
0.004
0.009
0.10
0.23
-
c1
0.004
0.006
0.10
0.15
-
D
-
0.390
-
9.91
3
E
0.235
0.260
5.97
6.60
-
E1
-
0.290
-
7.11
3
E2
0.125
-
3.18
-
-
E3
0.030
-
0.76
-
7
2
e
LEAD FINISH
MIN
0.050 BSC
1.27 BSC
-
k
0.008
0.015
0.20
0.38
L
0.270
0.370
6.86
9.40
-
Q
0.026
0.045
0.66
1.14
8
S1
0.005
-
0.13
-
6
M
-
0.0015
-
0.04
-
N
14
14
Rev. 0 5/18/94
NOTES:
1. Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area
shown. The manufacturer’s identification shall not be used as a pin
one identification mark. Alternately, a tab (dimension k) may be
used to identify pin one.
2. If a pin one identification mark is used in addition to a tab, the limits
of dimension k do not apply.
3. This dimension allows for off-center lid, meniscus, and glass overrun.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension M
applies to lead plating and finish thickness. The maximum limits of
lead dimensions b and c or M shall be measured at the centroid of
the finished lead surfaces, when solder dip or tin plate lead finish is
applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the leads.
8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be
reduced by 0.0015 inch (0.038mm) maximum when solder dip lead
finish is applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
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10
FN8399.3
March 4, 2015
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