IRFD120, SiHFD120 Datasheet

IRFD120, SiHFD120
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
100
RDS(on) ()
VGS = 10 V
Available
• Repetitive Avalanche Rated
0.27
RoHS*
Qg (Max.) (nC)
16
• For Automatic Insertion
Qgs (nC)
4.4
• End Stackable
7.7
• 175 °C Operating Temperature
Qgd (nC)
Configuration
Single
COMPLIANT
• Fast Switching
• Ease of Paralleling
D
• Compliant to RoHS Directive 2002/95/EC
HVMDIP
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
G
S
G
S
D
N-Channel MOSFET
ORDERING INFORMATION
Package
HVMDIP
IRFD120PbF
SiHFD120-E3
IRFD120
SiHFD120
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TA = 25 °C
TA = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
1.3
0.94
A
10
0.0083
W/°C
Single Pulse Avalanche Energyb
EAS
100
mJ
Repetitive Avalanche Currenta
IAR
1.3
A
Repetitive Avalanche Energya
EAR
0.13
mJ
Maximum Power Dissipation
TA = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
PD
1.3
W
dV/dt
5.5
V/ns
TJ, Tstg
- 55 to + 175
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91128
S10-2462-Rev. C, 08-Nov-10
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IRFD120, SiHFD120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
TYP.
MAX.
UNIT
RthJA
-
120
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 μA
100
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.13
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VDS = 100 V, VGS = 0 V
-
-
25
VDS = 80 V, VGS = 0 V, TJ = 150 °C
-
-
250
ID = 0.78 Ab
VGS = 10 V
VDS = 50 V, ID = 0.78 Ab
μA
-
-
0.27

0.80
-
-
S
-
360
-
-
150
-
-
34
-
-
-
16
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
pF
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
4.4
Gate-Drain Charge
Qgd
-
-
7.7
Turn-On Delay Time
td(on)
-
6.8
-
tr
-
27
-
-
18
-
-
17
-
-
4.0
-
-
6.0
-
-
-
1.3
-
-
10
-
-
2.5
-
130
260
ns
-
0.65
1.3
μC
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 10 V
ID = 9.2 A, VDS = 80 V
see fig. 6 and 13b
VDD = 50 V, ID = 9.2 A
Rg = 18 , RD = 5.2 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 1.3 A, VGS = 0 Vb
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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Document Number: 91128
S10-2462-Rev. C, 08-Nov-10
IRFD120, SiHFD120
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TA = 25 °C
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 3 - Typical Transfer Characteristics
TA = 175 °C
Fig. 2 - Typical Output Characteristics, TA = 175 °C
Document Number: 91128
S10-2462-Rev. C, 08-Nov-10
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFD120, SiHFD120
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C
TJ = 175 °C
SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 8 - Maximum Safe Operating Area
Document Number: 91128
S10-2462-Rev. C, 08-Nov-10
IRFD120, SiHFD120
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
- VDD
ID, Drain Current (A)
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
TA, Ambient Temperature (°C)
td(on)
td(off) tf
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJA)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
tr
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91128
S10-2462-Rev. C, 08-Nov-10
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IRFD120, SiHFD120
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
Rg
+
-
IAS
V DD
VDS
10 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91128
S10-2462-Rev. C, 08-Nov-10
IRFD120, SiHFD120
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91128.
Document Number: 91128
S10-2462-Rev. C, 08-Nov-10
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Package Information
Vishay Siliconix
HVM DIP (High voltage)
0.248 [6.29]
0.240 [6.10]
0.043 [1.09]
0.035 [0.89]
0.197 [5.00]
0.189 [4.80]
0.133 [3.37]
0.125 [3.18]
0.180 [4.57]
0.160 [4.06]
0.094 [2.38]
0.086 [2.18]
A
L
0.160 [4.06]
0.140 [3.56]
0° to 15°
2x
0.017 [0.43]
0.013 [0.33]
0.045 [1.14]
2 x 0.035 [0.89]
E min.
0.024 [0.60]
4x
0.020 [0.51]
0.100 [2.54] typ.
E max.
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
A
0.310
0.330
7.87
MAX.
8.38
E
0.300
0.425
7.62
10.79
L
0.270
0.290
6.86
7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361
Revision: 06-Sep-10
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000