Data Sheet

BZV85 series
Voltage regulator diodes
Rev. 03 — 10 November 2009
Product data sheet
1. Product profile
1.1 General description
Medium-power voltage regulator diodes in small hermetically sealed leaded
SOD66 (DO-41) glass packages.
The diodes are available in the normalized E24 approximately ±5 % tolerance range.
The series consists of 33 types with nominal working voltages from 3.6 V to 75 V.
1.2 Features
n Total power dissipation: max. 1.3 W
n Working voltage range:
nominal 3.3 V to 75 V (E24 range)
n Small hermetically sealed glass
package
n Tolerance series: approximately ±5 %
n Non-repetitive peak reverse power
dissipation: max. 60 W
1.3 Applications
n Stabilization purposes
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 50 mA
-
-
1
V
Ptot
total power dissipation
[1]
-
-
1
W
[2]
-
-
1.3
W
[3]
-
-
60
W
Tamb = 25 °C;
lead length 10 mm
PZSM
non-repetitive peak reverse
power dissipation
square wave;
tp = 100 µs
[1]
Device mounted on a Printed-Circuit Board (PCB) with 1 cm2 copper area per lead.
[2]
If the leads are kept at Ttp = 55 °C at 4 mm from body.
[3]
Tj = 25 °C prior to surge
BZV85 series
NXP Semiconductors
Voltage regulator diodes
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Graphic symbol
[1]
k
a
1
2
006aaa152
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
BZV85
[1]
series[1]
Package
Name
Description
Version
-
hermetically sealed glass package; axial leaded;
2 leads
SOD66
The series consists of 33 types with nominal working voltages from 3.3 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking code
BZV85 series
The diodes are type branded.
BZV85_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
2 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
IF
forward current
IZSM
non-repetitive peak reverse
current
Conditions
Max
Unit
mA
-
500
square wave;
tp = 100 µs
[1]
-
see
Table 8
half sine wave;
tp = 10 ms
[1]
-
see
Table 8
Tamb = 25 °C;
lead length 10 m
m
[2]
-
1
[3]
-
1.3
W
[1]
-
60
W
total power dissipation
Ptot
square wave;
tp = 100 µs
W
PZSM
non-repetitive peak reverse
power dissipation
Tj
junction temperature
-
200
°C
Tstg
storage temperature
−65
+200
°C
[1]
Tj = 25 °C prior to surge
[2]
Device mounted on a PCB with 1 cm2 copper area per lead.
[3]
If the leads are kept at Ttp = 55 °C at 4 mm from body.
BZV85_SER_3
Product data sheet
Min
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
3 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-t)
thermal resistance from
junction to tie-point
lead length 4 mm
-
-
110
K/W
Rth(j-a)
thermal resistance from
junction to ambient
lead length 10 mm
-
-
175
K/W
[1]
[1]
Device mounted on a PCB with 1 cm2 copper area per lead.
006aab844
103
Rth(j-t)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
10
0.02
0.01
0
1
10−2
Fig 1.
10−1
1
10
102
103
tp (ms)
104
Thermal resistance from junction to tie-point as a function of pulse duration;
lead length 4 mm
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 50 mA
-
-
1
V
BZV85_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
4 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
Table 8.
Characteristics per type
Tj = 25 °C unless otherwise specified.
BZV85- Working
Cxxx
voltage
VZ (V)
at Itest
Differential Temperature Test
resistance coefficient
current
Itest
rdif (Ω)
SZ (mV/K)
(mA)
at Itest
at Itest
Diode
Reverse
capacitance current
Cd (pF)
IR (µA)
Non-repetitive peak
reverse current
at f = 1 MHz;
VR = 0 V
at tp = 100 µs; at tp = 10 ms;
Tamb = 25 °C Tamb = 25 °C
Max
Max
VR (V) Max (A)
Max (mA)
IZSM
Min
Max
Max
Min
Max
3V6
3.4
3.8
15
−3.5
−1.0
60
450
50
1.0
8.0
2000
3V9
3.7
4.1
15
−3.5
−1.0
60
450
10
1.0
8.0
1950
4V3
4.0
4.6
13
−2.7
0
50
450
5
1.0
8.0
1850
4V7
4.4
5.0
13
−2.0
0.7
45
300
3
1.0
8.0
1800
5V1
4.8
5.4
10
−0.5
2.2
45
300
3
2.0
8.0
1750
5V6
5.2
6.0
7
0
2.7
45
300
2
2.0
8.0
1700
6V2
5.8
6.6
4
0.6
3.6
35
200
2
3.0
7.0
1620
6V8
6.4
7.2
3.5
1.3
4.3
35
200
2
4.0
7.0
1550
7V5
7.0
7.9
3
2.5
5.5
35
150
1
4.5
5.0
1500
8V2
7.7
8.7
5
3.1
6.1
25
150
0.7
5.0
5.0
1400
9V1
8.5
9.6
5
3.8
7.2
25
150
0.7
6.5
4.0
1340
10
9.4
10.6
8
4.7
8.5
25
90
0.2
7.0
4.0
1200
11
10.4
11.6
10
5.3
9.3
20
85
0.2
7.7
3.0
1100
12
11.4
12.7
10
6.3
10.8
20
85
0.2
8.4
3.0
1000
13
12.4
14.1
10
7.4
12.0
20
80
0.2
9.1
3.0
900
15
13.8
15.6
15
8.9
13.6
15
75
0.05
10.5
2.5
760
16
15.3
17.1
15
10.7
15.4
15
75
0.05
11.0
1.75
700
18
16.8
19.1
20
11.8
17.1
15
70
0.05
12.5
1.75
600
20
18.8
21.2
24
13.6
19.1
10
60
0.05
14.0
1.75
540
22
20.8
23.3
25
16.6
22.1
10
60
0.05
15.5
1.5
500
24
22.8
25.6
30
18.3
24.3
10
55
0.05
17
1.5
450
27
25.1
28.9
40
20.1
27.5
8
50
0.05
19
1.2
400
30
28.0
32.0
45
22.4
32.0
8
50
0.05
21
1.2
380
33
31.0
35.0
45
24.8
35.0
8
45
0.05
23
1.0
350
36
34.0
38.0
50
27.2
39.9
8
45
0.05
25
0.9
320
39
37.0
41.0
60
29.6
43.0
6
45
0.05
27
0.8
296
43
40.0
46.0
75
34.0
48.3
6
40
0.05
30
0.7
270
47
44.0
50.0
100
37.4
52.5
4
40
0.05
33
0.6
246
51
48.0
54.0
125
40.8
56.5
4
40
0.05
36
0.5
226
56
52.0
60.0
150
46.8
63.0
4
40
0.05
39
0.4
208
62
58.0
66.0
175
52.2
72.5
4
35
0.05
43
0.4
186
68
64.0
72.0
200
60.5
81.0
4
35
0.05
48
0.35
171
75
70.0
80.0
225
66.5
88.0
4
35
0.05
53
0.3
161
BZV85_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
5 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
mbg802
102
IZSM
(A)
mbg925
300
IF
(mA)
(1)
10
200
(1)
(2)
1
10−1
1
0
10
102
VZnom (V)
0
(1) tp = 10 µs; half sine wave; Tamb = 25 °C
(1) Tj = 200 °C
(2) tp = 10 ms; half sine wave; Tamb = 25 °C
(2) Tj = 25 °C
Fig 2.
(2)
100
Non-repetitive peak reverse current as a
function of the nominal working voltage
mbg926
10
Fig 3.
0.5
VF (V)
Forward current as a function of forward
voltage; typical values
mbg800
100
SZ
(mV/K)
SZ
(mV/K)
(1)
80
10
(2)
9V1
8V2
7V5
6V8
5
1.0
60
6V2
5V6
40
5V1
0
(3)
4V7
4V3
20
3V6
3V9
−5
0
0
25
IZ (mA)
50
1
BZV85-C3V6 to BZV85-C10
10
VZnom (V)
102
IZ = Itest
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
For types above 7.5 V the temperature coefficient is
independent of current; see Table 8.
(1) Maximum values
(2) Typical values
(3) Minimum values
Fig 4.
Temperature coefficient as a function of
working current; typical values
Fig 5.
Temperature coefficient as a function of
working current; typical values
BZV85_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
6 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
8. Package outline
Hermetically sealed glass package; axial leaded; 2 leads
SOD66
(1)
k
a
b
D
G1
L
L
Dimensions
Unit
b
max 0.81
nom
min
mm
D
G1
2.6
4.8
L
0
25.4
2
4 mm
scale
Note
1. The marking band indicates the cathode.
Outline
version
IEC
JEDEC
SOD66
Fig 6.
sod066_po
References
JEITA
European
projection
Issue date
97-06-20
09-10-09
DO-41
Package outline SOD66 (DO-41)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
10000
BZV85
series[2]
SOD66
52 mm tape ammopack, axial
-133
52 mm reel pack, axial
-113
[1]
For further information and the availability of packing methods, see Section 11.
[2]
The series consists of 33 types with nominal working voltages from 3.3 V to 75 V.
BZV85_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
7 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BZV85_SER_3
20091110
Product data sheet
-
BZV85_2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Table 6: Rth(j-tp) redefined to Rth(j-t) thermal resistance from junction to tie-point
Figure 1: Rth(j-tp) redefined to Rth(j-t) thermal resistance from junction to tie-point
Table 8 “Characteristics per type”: IZtest redefined to Itest test current
Figure 6 “Package outline SOD66 (DO-41)”: updated
BZV85_2
19990511
Product specification
-
BZV85_1
BZV85_1
19960426
Product specification
-
-
BZV85_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
8 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BZV85_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 November 2009
9 of 10
BZV85 series
NXP Semiconductors
Voltage regulator diodes
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 November 2009
Document identifier: BZV85_SER_3
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