DATASHEET

CD4041UBMS
Data Sheet
December 1992
File Number
CMOS Quad True/Complement Buffer
Features
CD4041UBMS types are quad true/complement buffers consisting of n- and p- channel units having low channel resistance and high current (sourcing and sinking) capability. The
CD4041UBMS is intended for use as a buffer, line driver, or
CMOS-to-TTL driver. It can be used as an ultra-low power
resistor-network driver for A/D and D/A conversion, as a
transmission-line driver, and in other applications where high
noise immunity and low power dissipation are primary
design requirements.
• High Voltage Type (20V Rating)
The CD4041UBMS is supplied in these 14 lead outline packages:
Braze Seal DIP
H4Q
Frit Seal DIP
H1B
Ceramic Flatpack
H3W
3309
• Balanced Sink and Source Current; Approximately 4
Times Standard “B” Drive
• Equalized Delay to True and Complement Outputs
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full
Package-Temperature Range;
- 100nA at 18V and +25oC
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specificationsfor Description of
‘B’ Series CMOS Devices”
Applications
Pinout
CD4041UBMS
TOP VIEW
• High Current Source/Sink Driver
• CMOS-to-DTL/TTL Converter Buffer
E=A 1
14 VDD
• Display Driver
F=A 2
13 D
• MOS Clock Driver
A 3
12 N = D
• Resistor Network Driver (Ladder or Weighted R)
G=B 4
11 M = D
• Buffer
H=B 5
10 C
• Transmission Line Driver
B 6
9 L=C
VSS 7
8 K=C
Functional Diagram
VDD
3
VDD
VDD
1
A
E
E=A
TRUE
OUTPUT
INPUT*
2
F
F=A
6
VSS
4
B
G
G=B
5
H=B
8
C
K
K=C
VSS
VSS
VDD
P
H
10
VSS
BY CMOS INPUT
PROTECTION NETWORK
COMPLEMENT
OUTPUT
N
*ALL INPUTS PROTECTED
VDD
VSS
FIGURE 1. SCHEMATIC DIAGRAM 1 OF 4 BUFFERS
9
L
L=C
13
11
M
D
M=D
VSS = 7
VDD = 14
12
N
N=D
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
CD4041UBMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance. . . . . . . . . . . . . . . .
θja
θjc
Ceramic DIP and FRIT Package . . . .
80oC/W
20oC/W
Flatpack Package . . . . . . . . . . . . . . . .
70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS (NOTE 1)
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
VDD = 18V
Output Voltage
Output Voltage
VOL15
VOH15
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
LIMITS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
2
µA
2
+125oC
-
200
µA
3
-55oC
-
2
µA
1
+25oC
-100
-
nA
2
+125oC
-1000
-
nA
3
-55oC
-100
-
nA
1
+25oC
-
100
nA
2
+125oC
-
1000
nA
3
-55oC
-
100
nA
1, 2, 3
+25oC, +125oC, -55oC
-
50
mV
1, 2, 3
+25oC, +125oC, -55oC
14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25oC
1.6
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25oC
5.0
-
mA
1
+25oC
19
-
mA
1
+25oC
-
-1.6
mA
Output Current (Sink)
Output Current (Source)
IOL15
IOH5A
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25oC
-
-6.4
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25oC
-
-5.0
mA
1
+25oC
-
-19
mA
1
+25oC
-2.8
-0.7
V
VSS = 0V, IDD = 10µA
1
+25oC
0.7
2.8
V
VDD = 2.8V, VIN = VDD or GND
7
+25oC
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
IOH15
VNTH
VPTH
F
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VOH > VOL <
VDD/2 VDD/2
V
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
-
1.0
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
4.0
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
-
2.5
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
12.5
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being implemented.
2. Go/No Go test with limits applied to inputs.
2
3. For accuracy, voltage is measured differentially to VDD. Limit is
0.050V max.
CD4041UBMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
Transition Time
SYMBOL
TPHL
TPLH
TTHL
TTLH
CONDITIONS (NOTE 1, 2)
VDD = 5V, VIN = VDD or GND
VDD = 5V, VIN = VDD or GND
LIMITS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
-
120
ns
10, 11
+125oC, -55oC
-
162
ns
9
+25oC
-
80
ns
10, 11
+125oC, -55oC
-
108
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 2
-55oC, +25oC
µA
1, 2
1, 2
-
1
+125oC
-
30
µA
-55oC, +25oC
-
2
µA
+125oC
-
60
µA
-55oC, +25oC
-
2
µA
+125oC
-
120
µA
-
50
mV
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25oC, +125oC, 55oC
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25oC, +125oC, 55oC
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25oC, +125oC, 55oC
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25oC, +125oC, 55oC
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125oC
1.2
-
mA
-55oC
2.1
-
mA
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD =15V, VOUT = 13.5V
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
+125oC
3.5
-
mA
-55oC
6.25
-
mA
+125oC
13
-
mA
-55oC
24
-
mA
+125oC
-
-1.2
mA
-55oC
-
-2.1
mA
+125oC
-
-4.6
mA
-55oC
-
-8.4
mA
+125oC
-
-3.5
mA
-55oC
-
-6.25
mA
+125oC
-
-13
mA
-55oC
-
-24
mA
-
2
V
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25oC, +125oC, 55oC
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25oC, +125oC, 55oC
8
-
V
Propagation Delay
TPHL
TPLH
1, 2, 3
+25oC
-
70
ns
1, 2, 3
+25oC
-
50
ns
3
VDD = 10V
VDD = 15V
CD4041UBMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
Transition Time
TTHL
TTLH
Input Capacitance
CIN
CONDITIONS
VDD = 10V
VDD = 15V
Any Input
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 2, 3
+25oC
-
40
ns
1, 2, 3
+25oC
-
30
ns
1, 2
+25oC
-
22.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Supply Current
IDD
N Threshold Voltage
VNTH
∆VTN
P Threshold Voltage
VTP
∆VTP
Functional
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 4
+25oC
-
7.5
µA
1, 4
+25oC
-2.8
-0.2
V
VDD = 10V, ISS = -10µA
1, 4
+25oC
-
±1
V
VSS = 0V, IDD = 10µA
1, 4
+25oC
0.2
2.8
V
1, 4
+25oC
-
±1
V
1
+25oC
VOH >
VDD/2
VOL <
VDD/2
V
1, 2, 3, 4
+25oC
-
1.35 x
+25oC
Limit
ns
VDD = 20V, VIN = VDD or GND
N Threshold Voltage
Delta
P Threshold Voltage
Delta
CONDITIONS
F
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
3. See Table 2 for +25oC limit.
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
± 0.2µA
Output Current (Sink)
IOL5
± 20% x Pre-Test Reading
IOH5A
± 20% x Pre-Test Reading
Output Current (Source)
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
CONFORMANCE GROUP
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
Group B
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
4
READ AND RECORD
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
CD4041UBMS
TABLE 6. APPLICABLE SUBGROUPS (Continued)
CONFORMANCE GROUP
Group D
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Sample 5005
1, 2, 3, 8A, 8B, 9
READ AND RECORD
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
TEST
READ AND RECORD
MIL-STD-883
METHOD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
1, 9, Deltas
Table 4
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
Static Burn-In 1
(Note 1)
1, 2, 4, 5, 8, 9, 11,
12
3, 6, 7, 10, 13
14
Static Burn-In 2
(Note 1)
1, 2, 4, 5, 8, 9, 11,
12
7
3, 6, 10, 13, 14
Dynamic BurnIn (Note 2)
-
7
14
1, 2, 4, 5, 8, 9, 11,
12
7
3, 6, 10, 13, 14
Irradiation
(Note 3)
9V ± -0.5V
50kHz
1, 2, 4, 5, 8, 9, 11,
12
3, 6, 10, 13
25kHz
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 4.75K ± 5%; VDD = 18V ± 0.5V
3. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ±
0.5V
Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) = +25oC
70
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
60
50
10V
40
30
20
5V
10
OUTPUT LOW CURRENT (IOL) (mA)
OUTPUT LOW CURRENT (IOL) (mA)
AMBIENT TEMPERATURE (TA) = +25oC
70
60
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
50
40
30
10V
20
10
5V
0
1
2
3
4
5
6
7
8
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
0
1
2
3
4
5
6
7
8
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 3. MINIMUM LOW (SINK) CURRENT CHARACTERISTICS
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
5
CD4041UBMS
Typical Performance Characteristics
-1
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-8
-7
-5
-3
-6
-4
-2
0
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
AMBIENT TEMPERATURE (TA) = +25oC
-10
-20
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
-30
-40
-50
-10V
-60
-15V
-70
-20
-10V
-50
-60
AMBIENT TEMPERATURE (TA) = +25oC
60
50
30
15V
20
70
60
SUPPLY VOLTAGE (VDD) = 5V
50
40
30
10V
20
10
15V
10
0
10
20
30
50
70
40
60
80
LOAD CAPACITANCE (CL) (pF)
90
100
FIGURE 6. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE
0
10
20
30
50
70
40
60
80
LOAD CAPACITANCE (CL) (pF)
90
100
FIGURE 7. TYPICAL TRANSITION TIME vs LOAD
CAPACITANCE
AMBIENT TEMPERATURE (TA) = +25oC
12
VI
OUTPUT VOLTAGE (VO) (V)
14
OUTPUT VOLTAGE (VO) (V)
-70
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE (VDD) = 5V
10V
-40
FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
80
40
-30
-15V
AMBIENT TEMPERATURE (TA) = +25oC
70
0
-10
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
TRANSITION TIME (tTLH, tTHL) (ns)
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
-1
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-8
-7
-5
-3
-6
-4
-2
(Continued)
VO
VDD = 10V
10
AMBIENT TEMP
(TA) = +25oC
8
6 VDD = 5V
VDD
= 3V
4
2
VI
SUPPLY VOLTAGE
(VDD) = 15V
VO
15.0
12.5
10V
10.0
7.5
5V
5.0
2.5
0
2
4
6
8
10
12
14
INPUT VOLTAGE (VI) (V)
FIGURE 8. MINIMUM AND MAXIMUM TRANSFER
CHARACTERISTICS - TRUE OUTPUT
6
16
18
0
2.5
5.0
7.5
10
12.5
15
INPUT VOLTAGE (VI) (V)
FIGURE 9. MINIMUM AND MAXIMUM TRANSFER
CHARACTERISTICS - COMPLEMENT OUTPUT
CD4041UBMS
Typical Performance Characteristics
(Continued)
8
6
4
2
105 8
6
4
8
6
4
2
1kHz AT 15V
100kHz AT 15V
2
104 8
6
4
10kHz AT 15V
2
103 8
100kHz AT 5V
6
4
2
102 8
6
4
10kHz AT 5V
2
10 8
6
4
1kHz AT 5V
10
4 68 2
102
VDD = 15V
104
10V
8
6
4
2
5V
5V
103 8
3V
6
4
2
102 8
6
4
2
101
8
6
4
2
2
2
AMBIENT TEMPERATURE (TA) = +25oC
INPUT tr = tp = 20ns
105
AMBIENT TEMPERATURE (TA) = +25oC
POWER DISSIPATION (PD) (µW)
(PER OUTPUT PAIR)
POWER DISSIPATION PER OUTPUT PAIR (PD) (µW)
4
2
4 68 2
103
4 68 2
104
4 68 2
105
4 68 2
106
4 68
107
CL = 15pF
CL = 50pF
INPUT RISE AND FALL TIME (tr, tf) (ns)
2
103
FIGURE 10. TYPICAL POWER DISSIPATION vs INPUT RISE
AND FALL TIME PER OUTPUT PAIR
4 68
2
4 68
2
4 68
2
4 68
104
105
106
FREQUENCY (f) (Hz)
107
FIGURE 11. TYPICAL POWER DISSIPATION vs FREQUENCY
PER OUTPUT PAIR
Chip Dimensions and Pad Layout
8
7
6
9
5
10
METALLIZATION: Thickness: 11kÅ − 14kÅ,
4
PASSIVATION:
BOND PADS:
11
0.004 inches X 0.004 inches MIN
DIE THICKNESS:
3
12
2
13
14
1
Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch)
7
AL.
10.4kÅ - 15.6kÅ, Silane
0.0198 inches - 0.0218 inches
DIE SIZE: X = 72 (69 - 77)
Y = 82 (79 - 87)
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