REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R010-98. 97-12-12 Monica L. Poelking B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. – LTG 04-02-02 Thomas M. Hess C Update radiation features in section 1.5 and SEP table IB. Update boilerplate paragraphs to MIL-PRF-38535. Delete class M requirement throughout - MAA 14-07-24 Thomas M. Hess REV SHEET REV C C C C C C SHEET 15 16 17 18 19 20 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil CHECKED BY Monica L. Poelking APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 95-12-27 REVISION LEVEL C MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, HEX BUFFER, MONOLITHIC SILICON SIZE CAGE CODE A 67268 5962-96643 SHEET 1 OF 20 DSCC FORM 2233 APR 97 . 5962-E151-14 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability device classes Q and space application device class V. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ RHA designator (see 1.2.1) 96643 01 V X C Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4503B Radiation hardened CMOS, hex buffer 02 4503BN Radiation hardened CMOS, hex buffer with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line package X CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 2 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD)......................................................................................... Input voltage range .................................................................................................... DC input current, any one input .................................................................................. Device dissipation per output transistor ...................................................................... Storage temperature range (TSTG) .............................................................................. Lead temperature (soldering, 10 seconds) ................................................................. Thermal resistance, junction-to-case (θJC): Case E ..................................................................................................................... Case X ..................................................................................................................... Thermal resistance, junction-to-ambient (θJA): Case E ..................................................................................................................... Case X ..................................................................................................................... Junction temperature (TJ) ........................................................................................... Maximum power dissipation at TA = +125°C (PD): 4/ Case E ..................................................................................................................... Case X ..................................................................................................................... -0.5 V dc to +20 V dc -0.5 V dc to + 20.5 V dc ±10 mA 100 mW -65°C to +150°C +265°C 24°C/W 29°C/W 73°C/W 114°C/W +175°C 0.68 W 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD)......................................................................................... Case operating temperature range (TC)...................................................................... Input voltage (VIN) ....................................................................................................... Output voltage (VOUT) ................................................................................................. 1.5 Radiation features. 3.0 V dc to +18 V dc -55°C to +125°C 0 V to VDD 0 V to VDD 5/ Maximum total dose available (dose rate = 50 – 300 rads (Si)/s) ........... 100 krads(Si) Single event phenomenon (SEP): 2 No SEL occurs at effective LET (see 4.4.4.3) ....................................... ≤ 75 MeV/(mg/cm ) 6/ 2 No SEU occurs at effective LET (see 4.4.4.3) ....................................... ≤ 75 MeV/(mg/cm ) 6/ Neutron irradiated (for device type 02) .............................................................. 1 x 10 1/ 2/ 3/ 4/ 5/ 6/ 7/ 14 neutrons/cm 2 7/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Unless otherwise specified, all voltages are referenced to VSS. The limits for the parameters specified herein shall apply over the full specified VDD range and case temperature range of -55°C to +125°C unless otherwise noted. If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on θJA) at the following rate: Case E ....................................................................................................................... 13.7 mW/°C Case X ....................................................................................................................... 8.8 mW/°C Radiation testing is performed on the standard evaluation circuit. Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase order or contract. Device type 02 is neutron irradiated at the wafer level to the indicated level. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http://www.astm.org or from: ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 4 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 5 TABLE IA. Electrical performance characteristics. Test Supply current Symbol IDD Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified Device Group A type subgroups Min VDD = 5 V VIN = 0.0 V or VDD All Max 1.0 2 1/ 30 1, 3 1/ 2.0 2 1/ 60 1, 3 1/ 2.0 2 1/ 120 1 2.0 2 200 All 1 7.5 VDD = 18 V, VIN = 0.0 V or VDD All 3 2.0 VDD = 5 V VO = 0.4 V VIN = 0.0 V or VDD All 1 2.1 2 1/ 1.3 3 1/ 2.6 1 5.5 2 1/ 3.8 3 1/ 6.5 1 16.1 2 1/ 11.2 3 1/ 19.2 All VDD = 15 V VIN = 0.0 V or VDD All VDD = 20 V, VIN = 0.0 V or VDD All M, D, P, L, R 2/ IOL Units 1, 3 1/ VDD = 10 V VIN = 0.0 V or VDD Low level output current (sink) Limits VDD = 10 V VO = 0.5 V VIN = 0.0 V or VDD All VDD = 15 V VO = 1.5 V VIN = 0.0 V or VDD All µA mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 6 TABLE IA. Electrical performance characteristics – Continued. Test High level output current (source) Symbol IOH Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified Device type VDD = 5 V VO = 4.6 V VIN = 0.0 V or VDD All All VDD = 10 V VO = 9.5 V VIN = 0.0 V or VDD All VDD = 15 V VO = 13.5 V VIN = 0.0 V or VDD Output voltage, low Input voltage, low Input voltage, high VOH VOL VIL VIH Limits Min VDD = 5 V VO = 2.5 V VIN = 0.0 V or VDD Output voltage, high Group A subgroups All VDD = 5 V, no load 1/ All -1.02 2 1/ -0.7 3 1/ -1.2 1 -4.8 2 1/ -3.0 3 1/ -5.8 1 -2.6 2 1/ -1.8 3 1/ -3.1 1 -6.8 2 1/ -4.8 3 1/ -8.2 4.95 VDD = 10 V, no load 1/ 1, 2, 3 9.95 VDD = 15 V, no load 3/ 1, 2, 3 14.95 All Max 1 1, 2, 3 VDD = 5 V, no load 1/ Units V 1, 2, 3 0.05 VDD = 10 V, no load 1/ 1, 2, 3 0.05 VDD = 15 V, no load 1, 2, 3 0.05 1, 2, 3 1.5 VDD = 10 V VOH > 9.0 V, VOL < 1.0 V 1/ 1, 2, 3 3 VDD = 15 V VOH > 13.5 V, VOL < 1.5 V 1, 2, 3 4 VDD = 5 V VOH > 4.5 V, VOL < 0.5 V All VDD = 5 V VOH > 4.5 V, VOL < 0.5 V All 1, 2, 3 3.5 VDD = 10 V VOH > 9.0 V, VOL < 1.0 V 1/ 1, 2, 3 7 VDD = 15 V VOH > 13.5 V, VOL < 1.5 V 1, 2, 3 11 mA V V V See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 7 TABLE IA. Electrical performance characteristics – Continued. Test Input leakage current, low Input leakage current, high N threshold voltage Symbol IIL IIH VNTH Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified Device Group A type Subgroups Limits Min VIN = VDD or GND, VDD = 20 V All 1 -100 VIN = VDD or GND, VDD = 20 V 2 -1000 VIN = VDD or GND, VDD = 18 V 3 -100 VIN = VDD or GND, VDD = 20 V All Unit s Max nA 1 100 VIN = VDD or GND, VDD = 20 V 2 1000 VIN = VDD or GND, VDD = 18 V 3 100 VDD = 10 V, ISS = -10 μA M, D, P, L, R 2/ All 1 -0.7 -2.8 All 1 -0.2 -2.8 N threshold voltage, delta ∆VNTH VDD = 10 V, ISS = -10 µA, M, D, P, L, R 2/ All 1 P threshold voltage VPTH VSS = 0.0 V, IDD = 10 µA All 1 0.7 2.8 All 1 0.2 2.8 M, D, P, L, R 2/ ±1.0 P threshold voltage, delta ∆VPTH VSS = 0.0 V, IDD = 10 µA M, D, P, L, R 2/ All 1 Three-state output leakage current, low IOZL VIN = VDD or GND, VDD = 20 V VOUT = 0 V All 1 -0.4 VIN = VDD or GND, VDD = 20 V VOUT = 0 V 2 -12 VIN = VDD or GND, VDD = 18 V VOUT = 0 V 3 -0.4 Three-state output leakage current, high Input capacitance IOZH CIN 1/ Functional tests VIN = VDD or GND, VDD = 20 V VOUT = VDD All V ±1.0 nA 1 0.4 VIN = VDD or GND, VDD = 20 V VOUT = VDD 2 12 VIN = VDD or GND, VDD = 18 V VOUT = VDD 3 0.4 All 4 7.5 pF All 7 VOL < VDD/2 V Any input, See 4.4.1c VDD = 2.8 V, VIN = VDD or GND VDD = 20 V, VIN = VDD or GND VOH > VDD/2 7 VDD = 18 V, VIN = VDD or GND All 8A M, D, P, L, R 2/ All 7 All 8B All 7 VDD = 3.0 V, VIN = VDD or GND M, D, P, L, R 2/ See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 8 TABLE IA. Electrical performance characteristics – Continued. Test Transition time 4/ Transition time 4/ Propagation delay time 4/ Symbol tTHL tTLH tPHL Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified Device type VDD = 5.0 V, VIN = VDD or GND All 70 10, 11 95 VDD = 10 V, VIN = VDD or GND 9 1/ 40 VDD = 15 V, VIN = VDD or GND 9 1/ 25 9 90 10, 11 122 VDD = 10 V, VIN = VDD or GND 9 1/ 45 VDD = 15 V, VIN = VDD or GND 9 1/ 35 9 110 10, 11 149 All 9 149 All 9 1/ 50 9 1/ 35 9 150 10, 11 203 All 9 203 All 9 1/ 70 9 1/ 50 9 140 10, 11 189 VDD = 10 V, VIN = VDD or GND 9 1/ 60 VDD = 15 V, VIN = VDD or GND 9 1/ 50 9 180 10, 11 243 VDD = 10 V, VIN = VDD or GND 9 1/ 80 VDD = 15 V, VIN = VDD or GND 9 1/ 70 VDD = 5.0 V, VIN = VDD or GND All VDD = 5.0 V, VIN = VDD or GND All VDD = 15 V, VIN = VDD or GND VDD = 5.0 V, VIN = VDD or GND All M, D, P, L, R 2/ VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND Propagation delay time, three-state 5/ Propagation delay time, three-state 5/ tPHZ, VDD = 5.0 V, VIN = VDD or GND All ns ns ns ns ns tPZH tPZL, tPLZ Max 9 VDD = 10 V, VIN = VDD or GND tPLH Unit Limits Min M, D, P, L, R 2/ Propagation delay time 4/ Group A Subgroups VDD = 5.0 V, VIN = VDD or GND All ns 1/ These tests are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which affect these characteristics. 2/ Devices supplied to this drawing will meet all levels M, D, P, L, R of irradiation. However, this device is only tested at the 'R' level. When performing post irradiation electrical measurements for any RHA level, TA = +25°C. 3/ For accuracy, voltage is measured differentially to VDD. Limit is 0.050 V Max. 4/ CL = 50 pF, RL = 200kΩ, input tr, tf < 20 ns. 5/ CL = 50 pF, RL = 1kΩ, input tr, tf < 20 ns. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 9 TABLE IB. SEP test limits. 1/ 2/ 3/ 1/ 2/ 3/ Device type VDD = 3.0 V No SEU occurs at effective LET Bias VDD = 18 V for SEL test 3/ No SEL occurs at effective LET All LET ≤ 75 MeV/(mg/cm ) LET ≤ 75 MeV/(mg/cm ) 2 2 For SEP test conditions, see 4.4.4.3 herein. Technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. Test plan must be approved by TRB and qualifying activity. Tested for worst case operating temperature, TA = +25°C ± 10°C for SEU and for latch up TA = +125°C ± 10°C. Device types 01 and 02 Case outlines E and X Terminal number Terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DIS A D1 Q1 D2 Q2 D3 Q3 VSS Q4 D4 Q5 D5 Q6 D6 DIS B VDD FIGURE 1. Terminal connections. Dn DIS A (B) Qn 0 0 0 1 0 1 X 1 High Z X = Irrelevant FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 10 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B or as modified in the device manufacturer’s quality management (QM) plan. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device. c. Subgroup 4 (CIN measurement) shall be measured only for the initial qualification and after process or design changes which may affect capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. Tests shall be sufficient to validate the limits defined in table I herein. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MILSTD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 11 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table IIA herein. c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883, method 1019, condition A and as specified herein. 4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Neutron irradiation. Neutron irradiation for device type 02 shall be conducted in wafer level by using a neutron fluence 14 2 of approximately 1 x 10 neutrons/cm . 4.4.4.3 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP testing. The test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive (i.e. 0° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related affects is allowed. b. The fluence shall be ≥ 100 errors or ≥ 10 ions/cm . c. The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be ≥ 20 micron in silicon. e. The test temperature shall be +25°C for the upset measurements and the maximum rated operating temperature ±10°C for the latchup measurements. f. Bias conditions shall be defined by the manufacturer for the latchup measurements. g. For SEP test limits, see table IB herein. 7 2 STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 6 2 2 SIZE 5962-96643 A REVISION LEVEL C SHEET 12 TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-PRF-38535, table III) Device class Q Device class V 1,7,9 1,7,9 Final electrical parameters (see 4.2) 1,2,3,7,8,9,10,11 1/ 1,2,3,7,8,9,10,11 2/ 3/ Group A test requirements (see 4.4) 1,2,3,4,7,8,9,10,11 1,2,3,4,7,8,9,10,11 Group C end-point electrical parameters (see 4.4) 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 3/ Group D end-point electrical parameters (see 4.4) 1,7,9 1,7,9 Group E end-point electrical parameters (see 4.4) 1,7,9 1,7,9 Interim electrical parameters (see 4.2) 1/ PDA applies to subgroups 1 and 7. 2/ PDA applies to subgroups 1, 7, 9, and deltas. 3/ Delta limits, as specified in table IIB, shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see table I). TABLE IIB. Burn-in and operating life test Delta parameters (+25°C). Parameter Symbol Delta Limits Supply current IDD ±0.2 µA Output current (sink) VDD = 5.0 V IOL ±20% Output current (source) VDD = 5.0 V, VOUT = 4.6 V IOH ±20% STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 13 4.5 Methods of inspection. Methods of inspection shall be as specified as follows: 4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-8108. 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. 6.7 Additional information. A copy of the following additional data shall be maintained and available from the device manufacturer: a. RHA levels test conditions (SEP). b. Number of upsets (SEU). c. Number of transients (SET). d. Occurrence of latch-up (SEL). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 14 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96643 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ RHA designator (see A.1.2.1) 96643 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit function 01 4503B Radiation hardened, CMOS, hex buffer 02 4503BN Radiation hardened, CMOS, hex buffer with neutron irradiated die A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-96643 A REVISION LEVEL C SHEET 15 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96643 A.1.2.4 Die details. The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01, 02 A-1 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01, 02 A-1 A.1.2.4.3 Interface materials. Die type Figure number 01, 02 A-1 A.1.2.4.4 Assembly related information. Die type Figure number 01, 02 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. A.2 APPLICABLE DOCUMENTS A.2.1 Government specification, standards, and handbooks. The following specification, standard, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 16 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96643 A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and figure A-1. A.3.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document. A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 17 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96643 A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum it shall consist of: a) Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, test method 5007. b) 100% wafer probe (see paragraph A.3.4 herein). c) 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, test method 2010 or the alternate procedures allowed in MIL-STD-883, test method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime-VA, Columbus, Ohio, 432183990 or telephone (614) 692-0547. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and MaritimeVA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96643 NOTE: Pad numbers reflect terminal numbers when placed in case outlines E, X (see figure 1). FIGURE A-1 Die bonding locations and electrical functions STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96643 Die physical dimensions: Die size: 1803 x 2057 microns. Die thickness: 20 ±1 mils. Interface materials. Top metallization: Al Thickness 11.0kÅ – 14.0kÅ Backside metallization: None Glassivation. Type: PSG Thickness: 10.4kÅ – 15.6kÅ Substrate: Single Crystal Silicon. Assembly related information. Substrate potential: Floating or tied to VDD. Special assembly instructions: Bond pad #16 (VDD) first. FIGURE A-1 Die bonding locations and electrical functions.– Continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-96643 A REVISION LEVEL C SHEET 20 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 14-07-24 Approved sources of supply for SMD 5962-96643 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/ Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962R9664301VEC 34371 CD4503BDMSR 5962R9664301VXC 34371 CD4503BKMSR 5962R9664301V9A 3/ CD4503BHSR 5962R9664302VEC 3/ CD4503BDNSR 5962R9664302VXC 34371 CD4503BKNSR 5962R9664302V9A 3/ CD4503BHNSR 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number Vendor name and address 34371 Intersil Corporation 1001 Murphy Ranch Road Milpitas, CA 95035-6803 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.