DATASHEET

HCS245MS
Radiation Hardened
Octal Bus Transceiver, Three-State, Non-Inverting
December 1992
Features
Pinouts
20 PIN CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C
TOP VIEW
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K or 1 Mega-RAD(Si)
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
DIR
1
A0
2
19 OE
A1
3
18 B0
A2
4
17 B1
A3
5
16 B2
A4
6
15 B3
A5
7
14 B4
A6
8
13 B5
A7
9
12 B6
GND 10
11 B7
20 VCC
Description
The Intersil HCS245MS is a Radiation Hardened Non-Inverting Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCS245MS allows data transmission from
the A bus to the B bus or from the B bus to the A bus. The
logic level at the direction input (DIR) determines the data
direction. The output enable input (OE) puts the I/O port in
the high-impedance state when high.
20 PIN CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C
TOP VIEW
20
VCC
2
19
OE
3
18
B0
A2
4
17
B1
A3
5
16
B2
A4
6
15
B3
A5
7
14
B4
A6
8
13
B5
A7
9
12
B6
10
11
B7
DIR
The HCS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS245MS is supplied in a 20 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
A0
A1
1
GND
Functional Diagram
Truth Table
ONE OF 8 TRANSCEIVERS
CONTROL
INPUTS
A DATA
OE
DIR
L
L
B Data to A Bus
L
H
A Data to B Bus
H
X
Isolation
9
OPERATION
(2, 3, 4, 5,
6, 7, 8)
B DATA
11
(18, 17, 16, 15,
14, 13, 12)
TO OTHER
7 BUFFERS
H = High Voltage Level, L = Low Voltage Level,
X = Immaterial
To prevent excess currents in the High-Z (Isolation)
modes, all I/O terminals should be terminated with 10kΩ
to 1MΩ resistors.
DIR
1
OUTPUT
ENABLE 19
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-475
File Number
2468.1
Specifications HCS245MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Impedance . . . . . . . . . . . . . . . .
θja
θjc
Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75oC/W
16oC/W
12oC/W
Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W
Power Dissipation per Package (PD)
For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
For TA = +100oC to +125oC Derate Linearly at 13mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
40
µA
2, 3
+125oC, -55oC
-
750
µA
1
+25oC
7.2
-
mA
2, 3
+125oC, -55oC
6.0
-
mA
1
+25oC
7.2
-
mA
2, 3
+125oC, -55oC
6.0
-
mA
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIN = VCC or
GND, VCC = 4.5V and
5.5V
1
+25oC
-
±0.5
µA
2, 3
+125oC, -55oC
-
±5.0
µA
1
+25oC
-
±1
µA
2, 3
+125oC, -55oC
-
±50
µA
7, 8A, 8B
+25oC, +125oC, -55oC
-
-
-
SYMBOL
ICC
Output Current
(Sink)
IOL
Output Current
(Source)
IOH
Output Voltage Low
VOL
Output Voltage High
GROUP
A SUBGROUPS
(NOTE 1)
CONDITIONS
VOH
Input Leakage
Current
IIN
Three-State Output
Leakage Current
IOZ
Noise Immunity
Functional Test
FN
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
Applied Voltage = 0V or
VCC
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
LIMITS
NOTE:
1. All voltages reference to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
7-476
Specifications HCS245MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
(NOTES 1, 2)
CONDITIONS
SYMBOL
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
Enable to Output
TPZL
TPZH
VCC = 4.5V
Disable to Output
GROUP
A SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
2
19
ns
2
23
ns
2
26
ns
2
30
ns
2
28
ns
2
33
ns
MAX
UNITS
+125oC,
10, 11
+25oC
9
o
10, 11
TPLZ
TPHZ
VCC = 4.5V
-55oC
o
+125 C, -55 C
o
9
+25 C
o
10, 11
o
+125 C, -55 C
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Capacitance Power
Dissipation
CPD
Input Capacitance
CONDITIONS
NOTES
TEMPERATURE
1
+25oC
VCC = 5.0V, f = 1MHz
+125oC,
1
CIN
VCC = Open, f = 1MHz
+25oC
1
+125oC,
1
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
-55oC
-55oC
+25oC
1
+125oC,
1
-55oC
MIN
Typical 45
pF
Typical 45
pF
-
10
pF
-
10
pF
-
12
ns
-
18
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
SYMBOL
ICC
(NOTES 1, 2)
CONDITIONS
200K RAD
LIMITS
1M RAD
LIMITS
TEMPERATURE
MIN
MAX
MIN
MAX
UNITS
VCC = 5.5V, VIN = VCC or GND
+25oC
-
0.75
-
3.75
mA
6.0
-
5.0
-
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25oC
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25oC
-6.0
-
-5.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50µA
+25oC
-
0.1
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50µA
+25oC
VCC
-0.1
-
VCC
-0.1
-
V
VCC = 5.5V, VIN = VCC or GND
+25oC
-
±5
-
±5
µA
Applied Voltage = 0V or VCC
+25oC
-
±50
-
±100
µA
Input Leakage Current
Three-State Output
Leakage Current
IIN
IOZ
7-477
Specifications HCS245MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS
FN
1M RAD
LIMITS
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
MIN
MAX
MIN
MAX
UNITS
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD (Note 3)
+25oC
-
-
-
-
-
SYMBOL
Noise Immunity
Functional Test
200K RAD
LIMITS
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
+25oC
2
23
2
28
ns
Enable to Output
TPZL
TPZH
VCC = 4.5V
+25oC
2
30
2
36
ns
Enable to Output
TPLZ
TPHZ
VCC = 4.5V
+25oC
2
33
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12µA
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
±200nA
PARAMETER
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
READ AND RECORD
ICC, IOL/H
Sample/5005
1, 7, 9
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroups 1, 2, 3, 9, 10, 11
NOTE:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
Group E Subgroup 2
TEST
READ AND RECORD
METHOD
PRE RAD
POST RAD
PRE RAD
POST RAD
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
7-478
Specifications HCS245MS
TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
1/2 VCC = 3V ± 0.5V
GROUND
VCC = 6V ± 0.5V
50kHz
25kHz
-
20
-
-
-
1 - 9, 11 - 20
-
-
11 - 18
1, 20
2-9
19
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
2-9
1, 10 - 19
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
-
10
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
10
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
-
10
1 - 9, 11 - 20
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
AC Load Circuit
AC Timing Diagrams
DUT
TEST
POINT
VIH
INPUT
VS
CL
VIL
TPLH
TPHL
VOH
CL = 50pF
VS
OUTPUT
RL = 500Ω
VOL
VOH
TTLH
TTHL
80%
VOL
20%
80%
20%
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VIL
0
V
GND
0
V
7-479
RL
HCS245MS
Three-State Low Timing Diagrams
Three-State Low Load Circuit
VCC
VIH
VS
INPUT
VIL
RL
TPZL
TPLZ
VOZ
VT
TEST
POINT
DUT
VW
OUTPUT
VOL
CL
CL = 50pF
TRI-STATE LOW VOLTAGE LEVELS
PARAMETER
RL = 500Ω
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VT
2.25
V
VW
0.90
V
0
V
GND
Three-State High Timing Diagrams
Three-State High Load Circuit
VIH
TEST
POINT
DUT
VS
INPUT
VIL
TPZH
RL
TPHZ
CL = 50pF
RL = 500Ω
VOH
VT
VW
OUTPUT
VOZ
TRI-STATE HIGH VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VT
2.25
V
VW
3.60
V
0
V
GND
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
File Number
7-480
HCS245MS
Die Characteristics
DIE DIMENSIONS:
124 x 110 mils
METALLIZATION:
Type: AlSi
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± -2.6kÅ
DIE ATTACH:
Material: Silver Epoxy
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
HCS245MS
NC
NC
DIR
(1)
VCC
(20)
NC
NC
OE
(19)
A0 (2)
(18) B0
A1 (3)
(17) B1
A2 (4)
(16) B2
A3 (5)
(15) B3
A4 (6)
(14) B4
A5 (7)
(13) B5
(8)
A6
(9)
A7
(10)
GND
7-481
(11)
B7
(12)
B6
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