DATASHEET

HCS11MS
Radiation Hardened
Triple 3-Input AND Gate
November 1994
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
14 PIN CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
TOP VIEW
• Total Dose 200K or 1 Mega-RAD(Si)
• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day
(Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
A1 1
14 VCC
B1 2
13 C1
A2 3
12 Y1
B2 4
11 C3
C2 5
10 B3
Y2 6
9 A3
GND 7
8 Y3
• Input Current Levels Ii ≤ 5µA at VOL, VOH
14 PIN CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C
TOP VIEW
Description
The Intersil HCS11MS is a Radiation Hardened Triple 3Input AND Gate. A high on all inputs forces the output to a
High state.
The HCS11MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS11MS is supplied in a 14 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
Truth Table
A1
1
14
VCC
B1
2
13
C1
A2
3
12
Y1
B2
4
11
C3
C2
5
10
B3
Y2
6
9
A3
GND
7
8
Y3
Functional Diagram
INPUTS
OUTPUTS
An
Bn
Cn
Yn
L
L
L
L
L
L
H
L
L
H
L
L
L
H
H
L
H
L
L
L
H
L
H
L
H
H
L
L
H
H
H
H
(1, 3, 9)
An
(2, 4, 10)
Bn
(12, 6, 8)
Yn
(13, 5, 11)
Cn
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-135
File Number
3048
Specifications HCS11MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Impedance . . . . . . . . . . . . . . . .
θja
θjc
Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75oC/W
16oC/W
12oC/W
Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W
Power Dissipation per Package (PD)
For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
For TA = +100oC to +125oC Derate Linearly at 13mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
10
µA
2, 3
+125oC, -55oC
-
200
µA
1
+25oC
4.8
-
mA
2, 3
+125oC, -55oC
4.0
-
mA
1
+25oC
-4.8
-
mA
2, 3
+125oC, -55oC
-4.0
-
mA
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIN = VCC or
GND
1
+25oC
-
±0.5
µA
2, 3
+125oC, -55oC
-
±5.0
µA
7, 8A, 8B
+25oC, +125oC, -55oC
-
-
-
SYMBOL
ICC
Output Current
(Sink)
IOL
Output Current
(Source)
IOH
Output Voltage Low
VOL
Output Voltage High
GROUP
A SUBGROUPS
(NOTE 1)
CONDITIONS
VOH
Input Leakage
Current
IIN
Noise Immunity
Functional Test
FN
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
LIMITS
NOTE:
1. All voltages reference to device GND.
2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
7-136
Specifications HCS11MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Input to Yn
Input to Yn
(NOTES 1, 2)
CONDITIONS
SYMBOL
TPHL
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
2
18
ns
10, 11
+125oC, -55oC
2
20
ns
9
+25oC
2
20
ns
10, 11
+125oC, -55oC
2
22
ns
MAX
UNITS
VCC = 4.5V
TPLH
VCC = 4.5V
LIMITS
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Capacitance Power
Dissipation
CPD
Input Capacitance
CIN
Output Transition
Time
TTHL
TTLH
CONDITIONS
NOTES
TEMPERATURE
1
+25oC
Typical 20
pF
1
+125oC
Typical 30
pF
1
+25oC
-
10
pF
1
+125oC
-
10
pF
1
+25oC
-
15
ns
1
+125oC
-
22
ns
VCC = 5.0V, f = 1MHz
VCC = Open, f = 1MHz
VCC = 4.5V
MIN
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
SYMBOL
ICC
200K RAD LIMITS
1M RAD LIMITS
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
MIN
MAX
MIN
MAX
UNITS
VCC = 5.5V, VIN = VCC or GND
+25oC
-
0.2
-
1.0
mA
4.0
-
4.0
-
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25oC
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25oC
-4.0
-
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50µA
+25oC
-
0.1
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50µA
+25oC
VCC
-0.1
-
VCC
-0.1
-
V
VCC = 5.5V, VIN = VCC or GND
+25oC
-
±5
-
±5
µA
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD
(Note 3)
+25oC
-
-
-
-
-
Input Leakage Current
Noise Immunity
Functional Test
IIN
FN
7-137
Specifications HCS11MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS
(NOTES 1, 2)
CONDITIONS
SYMBOL
Data to Output
200K RAD LIMITS
TEMPERATURE
1M RAD LIMITS
MIN
MAX
MIN
MAX
UNITS
TPHL
VCC = 4.5V
+25oC
2
20
2
25
ns
TPLH
VCC = 4.5V
+25oC
2
22
2
28
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
3µA
IOL/IOH
5
-15% of 0 Hour
PARAMETER
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group A (Note 1)
Group B
Group D
READ AND RECORD
ICC, IOL/H
Subgroups 1, 2, 3, 9, 10, 11
NOTE:
1. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
Group E Subgroup 2
TEST
READ AND RECORD
METHOD
PRE RAD
POST RAD
PRE RAD
POST RAD
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
STATIC BURN-IN I TEST CONDITIONS (Note 1)
7-138
VCC = 6V ± 0.5V
50kHz
25kHz
Specifications HCS11MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
6, 8, 12
1, 2, 3, 4, 5, 7, 9, 10, 11,
13
-
14
-
-
-
1, 2, 3, 4, 5, 9, 10,
11, 13, 14
-
-
6, 8, 12
14
1, 2, 3, 4, 5, 9,
10, 11, 13
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
6, 8, 12
7
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 680KΩ ± 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
6, 8, 12
7
1, 2, 3, 4, 5, 9, 10, 11, 13, 14
AC Timing Diagrams
AC Load Circuit
DUT
TEST
POINT
VIH
INPUT
VS
CL
VIL
TPLH
TPHL
VOH
CL = 50pF
VS
OUTPUT
RL = 500Ω
VOL
VOH
TTLH
TTHL
80%
VOL
20%
80%
20%
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VIL
0
V
GND
0
V
7-139
RL
HCS11MS
Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
2.20 x 2.24mm
METALLIZATION:
Type: AlSi
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
DIE ATTACH:
Material: Silver Epoxy
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 x 4 mils
Metallization Mask Layout
HCS11MS
A1
(1)
VCC
(14)
C1
(13)
B1 (2)
(12) Y1
(11) C3
A2 (3)
(10) B3
B2 (4)
C2 (5)
(9) A3
(6)
Y2
(7)
GND
7-140
(8)
Y3
Similar pages