2n7000.pdf

2N7000
2N7000
N-Channel Enhancement Mode Field Effect Transistor
N-Kanal Feldeffekt Transistor – Anreicherungstyp
N
N
Version 2011-02-16
Power dissipation
Verlustleistung
18
9
16
S GD
2 x 2.54
Dimensions - Maße [mm]
350 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx.
Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
2N7000
Drain-Source-voltage – Drain-Source-Spannung
VDSS
60 V
Drain-Gate-voltage – Drain-Gate-Spannung
RGS ≤ 1 MΩ
VDGR
60 V
Gate-Source-voltage – Gate-Source-Spannung
dc
tp < 50 µs
VGSS
VGSS
± 20 V
± 40 V
Power dissipation – Verlustleistung
Ptot
350 mW
Drain current continuos – Drainstrom (dc)
Peak Drain current – Drain-Spitzenstrom
ID
IDM
200 mA
500 mA
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
150°C
-55…+150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
2N7000
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Drain-Source breakdown voltage – Drain-Source Durchbruchspannung
ID = 10 µA
V(BR)DSS
Drain-Source leakage current – Drain-Source Leckstrom
60 V
G short
VDS = 48 V
VDS = 48 V, Tj = 125°C
IDSS
IDSS
1 µA
1 mA
±IGSS
10 nA
Gate-Body leakage current – Gate-Substrat Leckstrom
VGS = ±15 V
Gate-Threshold voltage – Gate-Source Schwellspannung
VGS = VDS, ID = 1 mA
VGS(th)
0.8 V
3V
Drain-Source on-voltage – Drain-Source-Spannung
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 75 mA
VDS(on)
2.5 V
0.45 V
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 75 mA
RDS(on)
RDS(on)
Forward Transconductance – Übertragungssteilheit
VDS = 10 V, ID = 200 mA
gFS
5Ω
6Ω
100 mS
Input Capacitance – Eingangskapazität
VDS = 25 V, f = 1 MHz
Ciss
60 pF
Coss
25 pF
Crss
5 pF
ton
10 ns
VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω
toff
10 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 357 K/W 1)
Output Capacitance – Ausgangskapazität
VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance – Rückwirkungskapazität
VDS = 25 V, f = 1 MHz
Turn-On Delay Time – Einschaltverzögerung
VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω
Turn-Off Delay Time – Ausschaltverzögerung
1
2
Device mounted on standard PCB material
Bauteil montiert auf Standard-Leiterplattenmaterial
http://www.diotec.com/
© Diotec Semiconductor AG
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