Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D154
BZX284 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 Apr 19
2002 May 28
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX284 series
FEATURES
DESCRIPTION
• Total power dissipation:
max. 400 mW
Low-power voltage regulator diodes in a SOD110 very small ceramic SMD
package. The diodes are available in the normalized E24 ±2% (BZX284-B) and
±5% (BZX284-C) tolerance range. The series consists of 37 types with nominal
working voltages from 2.4 to 75 V.
• Two tolerance series:
±2% and ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range).
cathode mark
handbook, 4 columns
a
k
k
a
APPLICATIONS
• General regulation functions.
bottom view
side view
top view
MAM219
Fig.1 Simplified outline (SOD110) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
BZX284-B2V4
WO
BZX284-B2V7
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZX284-B15
XH
BZX284-C2V4
YO
BZX284-C15
ZH
WP
BZX284-B16
XI
BZX284-C2V7
YP
BZX284-C16
ZI
BZX284-B3V0
WQ
BZX284-B18
XJ
BZX284-C3V0
YQ
BZX284-C18
ZJ
BZX284-B3V3
WR
BZX284-B20
XK
BZX284-C3V3
YR
BZX284-C20
ZK
BZX284-B3V6
WS
BZX284-B22
XL
BZX284-C3V6
YS
BZX284-C22
ZL
BZX284-B3V9
WT
BZX284-B24
XM
BZX284-C3V9
YT
BZX284-C24
ZM
BZX284-B4V3
WU
BZX284-B27
XN
BZX284-C4V3
YU
BZX284-C27
ZN
BZX284-B4V7
WV
BZX284-B30
XO
BZX284-C4V7
YV
BZX284-C30
ZO
BZX284-B5V1
WW
BZX284-B33
XP
BZX284-C5V1
YW
BZX284-C33
ZP
BZX284-B5V6
WX
BZX284-B36
XQ
BZX284-C5V6
YX
BZX284-C36
ZQ
BZX284-B6V2
WY
BZX284-B39
XR
BZX284-C6V2
YY
BZX284-C39
ZR
BZX284-B6V8
WZ
BZX284-B43
XS
BZX284-C6V8
YZ
BZX284-C43
ZS
BZX284-B7V5
XA
BZX284-B47
XT
BZX284-C7V5
ZA
BZX284-C47
ZT
BZX284-B8V2
XB
BZX284-B51
XU
BZX284-C8V2
ZB
BZX284-C51
ZU
BZX284-B9V1
XC
BZX284-B56
XV
BZX284-C9V1
ZC
BZX284-C56
ZV
BZX284-B10
XD
BZX284-B62
XW
BZX284-C10
ZD
BZX284-C62
ZW
BZX284-B11
XE
BZX284-B68
XX
BZX284-C11
ZE
BZX284-C68
ZX
BZX284-B12
XF
BZX284-B75
XY
BZX284-C12
ZF
BZX284-C75
ZY
BZX284-B13
XG
−
BZX284-C13
ZG
2002 May 28
TYPE
NUMBER
−
2
TYPE
NUMBER
−
MARKING
CODE
−
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX284 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
250
UNIT
IF
continuous forward current
mA
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tamb = 25 °C prior to surge
see Tables 1 and 2
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.
ELECTRICAL CHARACTERISTICS
Total BZX284-B and BZX284-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
IF = 100 mA; see Fig.2
1.1
V
BZX284-B/C2V4
VR = 1 V
50
μA
BZX284-B/C2V7
VR = 1 V
20
μA
BZX284-B/C3V0
VR = 1 V
10
μA
BZX284-B/C3V3
VR = 1 V
5
μA
BZX284-B/C3V6
VR = 1 V
5
μA
BZX284-B/C3V9
VR = 1 V
3
μA
BZX284-B/C4V3
VR = 1 V
3
μA
BZX284-B/C4V7
VR = 2 V
3
μA
BZX284-B/C5V1
VR = 2 V
2
μA
BZX284-B/C5V6
VR = 2 V
1
μA
BZX284-B/C6V2
VR = 4 V
3
μA
BZX284-B/C6V8
VR = 4 V
2
μA
BZX284-B/C7V5
VR = 5 V
1
μA
BZX284-B/C8V2
VR = 5 V
700
nA
BZX284-B/C9V1
VR = 6 V
500
nA
BZX284-B/C10
VR = 7 V
200
nA
BZX284-B/C11
VR = 8 V
100
nA
BZX284-B/C12
VR = 8 V
100
nA
BZX284-B/C13
VR = 8 V
100
nA
BZX284-B/C15 to 75
VR = 0.7VZnom
50
nA
reverse current
2002 May 28
3
DIFFERENTIAL RESISTANCE
rdif (Ω)
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA
at IZtest = 5 mA
MIN.
MIN.
TYP.
TYP.
MAX.
MAX.
MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
TYP.
MAX.
MAX.
MAX.
4
2.45
2.2
2.6
275
400
70
100
−1.6
450
12.0
2V7
2.65
2.75
2.5
2.9
300
450
75
100
−2.0
440
12.0
3V0
2.94
3.06
2.8
3.2
325
500
80
95
−2.1
425
12.0
3V3
3.23
3.37
3.1
3.5
350
500
85
95
−2.4
410
12.0
3V6
3.53
3.67
3.4
3.8
375
500
85
90
−2.4
390
12.0
3V9
3.82
3.98
3.7
4.1
400
500
85
90
−2.5
370
12.0
4V3
4.21
4.39
4.0
4.6
410
600
80
90
−2.5
350
12.0
4V7
4.61
4.79
4.4
5.0
425
500
50
80
−1.4
325
12.0
5V1
5.00
5.20
4.8
5.4
400
480
40
60
−0.8
300
12.0
5V6
5.49
5.71
5.2
6.0
80
400
15
40
1.2
275
12.0
6V2
6.08
6.32
5.8
6.6
40
150
6
10
2.3
250
12.0
6V8
6.66
6.94
6.4
7.2
30
80
6
15
3.0
215
12.0
7V5
7.35
7.65
7.0
7.9
15
80
2
10
4.0
170
4.0
8V2
8.04
8.36
7.7
8.7
20
80
2
10
4.6
150
4.0
9V1
8.92
9.28
8.5
9.6
20
100
2
10
5.5
120
3.0
10
9.80
10.20
9.4
10.6
20
150
2
10
6.4
110
3.0
11
10.80
11.20
10.4
11.6
25
150
2
10
7.4
108
2.5
12
11.80
12.20
11.4
12.7
25
150
2
10
8.4
105
2.5
13
12.70
13.30
12.4
14.1
25
170
2
10
9.4
103
2.5
15
14.70
15.30
13.8
15.6
25
200
3
15
11.4
99
2.0
16
15.70
16.30
15.3
17.1
25
200
4
20
12.4
97
1.5
18
17.60
18.40
16.8
19.1
25
225
4
20
14.4
93
1.5
20
19.60
20.40
18.8
21.2
30
225
4
20
16.4
88
1.5
22
21.60
22.40
20.8
23.3
30
250
5
25
18.4
84
1.25
24
23.50
24.50
22.8
25.6
30
250
6
30
20.4
80
1.25
Product data sheet
2.35
BZX284 series
2V4
NXP Semiconductors
BZX284Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
2002 May 28
Table 1 Per type BZX284-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
TYP.
MAX.
MAX.
5
Tol. ±2% (B)
Tol. ±5% (C)
MIN.
MAX.
MIN.
27
26.50
27.50
25.1
28.9
35
250
8
40
23.4
73
1.0
30
29.40
30.60
28.0
32.0
35
250
10
40
26.6
66
1.0
33
32.30
33.70
31.0
35.0
40
275
11
40
29.7
60
0.9
36
35.30
36.70
34.0
38.0
40
300
15
60
33.0
59
0.8
39
38.20
39.80
37.0
41.0
40
300
25
75
36.4
58
0.7
43
42.10
43.90
40.0
46.0
45
325
30
80
41.2
56
0.6
47
46.10
47.90
44.0
50.0
45
325
30
90
46.1
55
0.5
51
50.00
52.00
48.0
54.0
45
350
35
110
51.0
52
0.4
56
54.90
57.10
52.0
60.0
50
375
40
120
57.0
49
0.3
62
60.80
63.20
58.0
66.0
60
400
50
140
64.4
44
0.3
68
66.60
69.40
64.0
72.0
75
400
55
160
71.7
40
0.25
75
73.50
76.50
70.0
79.0
85
400
70
175
80.2
35
0.2
MAX.
at IZtest = 0.5 mA
TYP.
at IZtest = 2 mA
MAX.
TYP.
MAX.
NXP Semiconductors
BZX284Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
2002 May 28
Table 2 Per type BZX284-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
Product data sheet
BZX284 series
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX284 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
315
K/W
Note
1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.
GRAPHICAL DATA
MBG781
MBG783
300
0
handbook, halfpage
handbook, halfpage
IF
(mA)
SZ
(mV/K)
4V3
−1
200
3V9
3V6
−2
100
3V3
3V0
2V4
2V7
0
0.6
0.8
VF (V)
−3
1
0
20
Tj = 25 °C.
BZX284-B/C2V4 to B/C4V3.
Tj = 25 to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
2002 May 28
6
40
IZ (mA)
60
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX284 series
MBG782
10
handbook, halfpage
12
SZ
(mV/K)
11
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
IZ (mA)
20
BZX284-B/C4V7 to B/C12.
Tj = 25 to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2002 May 28
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX284 series
PACKAGE OUTLINE
Very small ceramic rectangular surface mounted package
D
SOD110
E
A
y
cathode
identifier
DIMENSIONS (mm are the original dimensions)
1
2
0
0.5
1 mm
UNIT
A
max.
D
E
y
mm
1.6
2.10
1.90
1.40
1.10
0.1
scale
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-14
SOD110
2002 May 28
EUROPEAN
PROJECTION
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX284 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 May 28
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/04/pp10
Date of release: 2002 May 28
Document order number: 9397 750 09734
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